LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM
    1.
    发明申请
    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM 有权
    发光装置,发光装置包装和照明系统

    公开(公告)号:US20110220946A1

    公开(公告)日:2011-09-15

    申请号:US13042884

    申请日:2011-03-08

    IPC分类号: H01L33/20

    摘要: Provided is a light emitting device. The light emitting device includes a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, an undoped semiconductor layer disposed on the second conductive type semiconductor layer and comprising a plurality of first holes, and a third conductive type semiconductor layer disposed on the undoped semiconductor layer and comprising a plurality of second holes.

    摘要翻译: 提供了一种发光装置。 发光器件包括第一导电类型半导体层,第一导电类型半导体层上的有源层,有源层上的第二导电类型半导体层,设置在第二导电类型半导体层上的未掺杂半导体层,并且包括多个 的第一孔,以及设置在未掺杂半导体层上并包括多个第二孔的第三导电类型半导体层。

    Light emitting device, light emitting device package, and lighting system
    2.
    发明授权
    Light emitting device, light emitting device package, and lighting system 有权
    发光装置,发光装置封装和照明系统

    公开(公告)号:US08319241B2

    公开(公告)日:2012-11-27

    申请号:US13042884

    申请日:2011-03-08

    IPC分类号: H01L33/00

    摘要: Provided is a light emitting device. The light emitting device includes a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, an undoped semiconductor layer disposed on the second conductive type semiconductor layer and comprising a plurality of first holes, and a third conductive type semiconductor layer disposed on the undoped semiconductor layer and comprising a plurality of second holes.

    摘要翻译: 提供了一种发光装置。 发光器件包括第一导电类型半导体层,第一导电类型半导体层上的有源层,有源层上的第二导电类型半导体层,设置在第二导电类型半导体层上的未掺杂半导体层,并且包括多个 的第一孔,以及设置在未掺杂半导体层上并包括多个第二孔的第三导电类型半导体层。

    Light-emitting device
    3.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号:US08735910B2

    公开(公告)日:2014-05-27

    申请号:US12964374

    申请日:2010-12-09

    IPC分类号: H01L29/18

    摘要: Provided are a light-emitting device, a light-emitting device package, and a method for fabricating the light-emitting device. The light-emitting device includes a first light-emitting structure; an insulation layer having non-conductivity, in which a current does not flow, on the first light-emitting structure; a second light-emitting structure on the insulation layer; and a common electrode simultaneously and electrically connected to the first light-emitting structure and the second light-emitting structure.

    摘要翻译: 提供了一种发光器件,发光器件封装以及用于制造发光器件的方法。 发光装置包括第一发光结构; 在第一发光结构上具有不导电性的绝缘层,其中不流动电流; 绝缘层上的第二发光结构; 以及与第一发光结构和第二发光结构同时且电连接的公共电极。

    Light-Emitting Device
    4.
    发明申请
    Light-Emitting Device 有权
    发光装置

    公开(公告)号:US20110140132A1

    公开(公告)日:2011-06-16

    申请号:US12964374

    申请日:2010-12-09

    IPC分类号: H01L33/08

    摘要: Provided are a light-emitting device, a light-emitting device package, and a method for fabricating the light-emitting device. The light-emitting device includes a first light-emitting structure; an insulation layer having non-conductivity, in which a current does not flow, on the first light-emitting structure; a second light-emitting structure on the insulation layer; and a common electrode simultaneously and electrically connected to the first light-emitting structure and the second light-emitting structure.

    摘要翻译: 提供了一种发光器件,发光器件封装以及用于制造发光器件的方法。 发光装置包括第一发光结构; 在第一发光结构上具有不导电性的绝缘层,其中不流动电流; 绝缘层上的第二发光结构; 以及与第一发光结构和第二发光结构同时且电连接的公共电极。

    Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting unit
    5.
    发明授权
    Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting unit 有权
    发光器件,制造发光器件的方法,发光器件封装和照明单元

    公开(公告)号:US08426883B2

    公开(公告)日:2013-04-23

    申请号:US13033745

    申请日:2011-02-24

    IPC分类号: H01L33/00

    摘要: Provided are a light emitting device, a method for fabricating the light emitting device, a light emitting device package, and a lighting unit. The light emitting device includes a conductive support substrate, a protection layer on the conductive support substrate, the protection layer having an inclined top surface, a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the conductive support substrate and the protection layer, and an electrode on the light emitting structure layer. A portion of the protection layer is disposed between the conductive support substrate and the light emitting structure layer.

    摘要翻译: 本发明提供发光器件,制造发光器件的方法,发光器件封装和照明单元。 发光器件包括导电支撑衬底,导电支撑衬底上的保护层,保护层具有倾斜的顶表面,发光结构层包括第一导电类型半导体层,第二导电型半导体层和 导电支撑基板和保护层之间的第一导电类型半导体层和第二导电类型半导体层之间的有源层,以及发光结构层上的电极。 保护层的一部分设置在导电支撑基板和发光结构层之间。

    Light emitting device, light emitting device package, and lighting system
    7.
    发明授权
    Light emitting device, light emitting device package, and lighting system 有权
    发光装置,发光装置封装和照明系统

    公开(公告)号:US08878158B2

    公开(公告)日:2014-11-04

    申请号:US13079388

    申请日:2011-04-04

    申请人: Myung Hoon Jung

    发明人: Myung Hoon Jung

    摘要: A light emitting device according to the embodiment includes a conductive support substrate; a second conductive semiconductor layer on the conductive support substrate; an active layer on the second conductive semiconductor layer; a first conductive semiconductor layer on the active layer, the first conductive semiconductor layer including a GaN layer, an InGaN layer, and a roughness formed with selectively removed the GaN and InGaN layers; and an electrode layer on the first conductive semiconductor layer.

    摘要翻译: 根据实施例的发光器件包括导电支撑衬底; 在所述导电支撑基板上的第二导电半导体层; 在所述第二导电半导体层上的有源层; 在所述有源层上的第一导电半导体层,所述第一导电半导体层包括GaN层,InGaN层和形成有选择性去除所述GaN和InGaN层的粗糙度; 以及第一导电半导体层上的电极层。

    Fabrication method of light emitting device
    8.
    发明授权
    Fabrication method of light emitting device 有权
    发光装置的制造方法

    公开(公告)号:US08173469B2

    公开(公告)日:2012-05-08

    申请号:US13050201

    申请日:2011-03-17

    IPC分类号: H01L21/00

    摘要: Provided is a method for fabricating a light emitting device. The method for fabricating the light emitting device includes forming a buffer layer including a compound semiconductor in which a rare-earth element is doped on a substrate, forming a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, which are successively stacked on the buffer layer, forming a first electrode layer on the light emitting structure, removing the substrate, and forming a second electrode layer under the light emitting structure.

    摘要翻译: 提供一种制造发光器件的方法。 制造发光器件的方法包括:形成包括掺杂有稀土元素的化合物半导体的缓冲层,形成包括第一导电类型半导体层,有源层和第二导电类型的发光结构 导电型半导体层,其依次层叠在缓冲层上,在发光结构上形成第一电极层,去除衬底,并在发光结构的下方形成第二电极层。

    Light emitting device including a plurality of GaN-based reflective layers
    10.
    发明授权
    Light emitting device including a plurality of GaN-based reflective layers 有权
    发光器件包括多个GaN基反射层

    公开(公告)号:US08390006B2

    公开(公告)日:2013-03-05

    申请号:US12948423

    申请日:2010-11-17

    IPC分类号: H01L21/66 H01L33/00

    摘要: Provided are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a reflective layer including a first GaN-based semiconductor layer having a first refractive index, a second GaN-based semiconductor layer having a second refractive index less than the first refractive index, and a third GaN-based semiconductor layer having a third refractive index less than the second refractive index and a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the reflective layer.

    摘要翻译: 提供了发光器件,制造发光器件的方法,发光器件封装和照明系统。 发光器件包括:反射层,包括具有第一折射率的第一GaN基半导体层,具有小于第一折射率的第二折射率的第二GaN基半导体层;以及第三GaN基半导体层,其具有 第三折射率小于第二折射率的发光结构层和包括第一导电类型半导体层,第二导电类型半导体层和设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层的发光结构层 在反射层上。