摘要:
Provided is a light emitting device. The light emitting device includes a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, an undoped semiconductor layer disposed on the second conductive type semiconductor layer and comprising a plurality of first holes, and a third conductive type semiconductor layer disposed on the undoped semiconductor layer and comprising a plurality of second holes.
摘要:
Provided is a light emitting device. The light emitting device includes a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, an undoped semiconductor layer disposed on the second conductive type semiconductor layer and comprising a plurality of first holes, and a third conductive type semiconductor layer disposed on the undoped semiconductor layer and comprising a plurality of second holes.
摘要:
Provided are a light-emitting device, a light-emitting device package, and a method for fabricating the light-emitting device. The light-emitting device includes a first light-emitting structure; an insulation layer having non-conductivity, in which a current does not flow, on the first light-emitting structure; a second light-emitting structure on the insulation layer; and a common electrode simultaneously and electrically connected to the first light-emitting structure and the second light-emitting structure.
摘要:
Provided are a light-emitting device, a light-emitting device package, and a method for fabricating the light-emitting device. The light-emitting device includes a first light-emitting structure; an insulation layer having non-conductivity, in which a current does not flow, on the first light-emitting structure; a second light-emitting structure on the insulation layer; and a common electrode simultaneously and electrically connected to the first light-emitting structure and the second light-emitting structure.
摘要:
Provided are a light emitting device, a method for fabricating the light emitting device, a light emitting device package, and a lighting unit. The light emitting device includes a conductive support substrate, a protection layer on the conductive support substrate, the protection layer having an inclined top surface, a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the conductive support substrate and the protection layer, and an electrode on the light emitting structure layer. A portion of the protection layer is disposed between the conductive support substrate and the light emitting structure layer.
摘要:
A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion.
摘要:
A light emitting device according to the embodiment includes a conductive support substrate; a second conductive semiconductor layer on the conductive support substrate; an active layer on the second conductive semiconductor layer; a first conductive semiconductor layer on the active layer, the first conductive semiconductor layer including a GaN layer, an InGaN layer, and a roughness formed with selectively removed the GaN and InGaN layers; and an electrode layer on the first conductive semiconductor layer.
摘要:
Provided is a method for fabricating a light emitting device. The method for fabricating the light emitting device includes forming a buffer layer including a compound semiconductor in which a rare-earth element is doped on a substrate, forming a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, which are successively stacked on the buffer layer, forming a first electrode layer on the light emitting structure, removing the substrate, and forming a second electrode layer under the light emitting structure.
摘要:
A light emitting device includes a plurality of clusters spread on a surface of a substrate and a first semiconductor layer provided over the plurality of clusters. The first semiconductor layer may includes air gaps above the plurality of clusters. In addition, light emitting structure may include a first conductive semiconductor layer adjacent to the first semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.
摘要:
Provided are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a reflective layer including a first GaN-based semiconductor layer having a first refractive index, a second GaN-based semiconductor layer having a second refractive index less than the first refractive index, and a third GaN-based semiconductor layer having a third refractive index less than the second refractive index and a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the reflective layer.