公开(公告)号：US07494827B2

公开(公告)日：2009-02-24

申请号：US11471700

申请日：2006-06-21

申请人： Mitsuhiro Ohkuni ,  Keiichi Matsunaga

发明人： Mitsuhiro Ohkuni ,  Keiichi Matsunaga

IPC分类号： H01L21/00

CPC分类号： H01L21/31116

摘要： The plasma etching method first forms a coating film on the inner surface of the chamber. Next, an etching process is performed on a wafer under a condition in which the coating film is formed, and thereafter a reaction product adhered onto the coating film in the etching process is removed together with the coating film. Each of these processes is implemented at a frequency in which the condition of the chamber inner surface is nearly always the same at the time of initiating the etching process.

摘要翻译： 等离子体蚀刻方法首先在腔室的内表面上形成涂膜。 接下来，在形成涂膜的条件下对晶片进行蚀刻处理，然后与涂膜一起除去在蚀刻工艺中附着在涂膜上的反应产物。 这些处理中的每一个以在开始蚀刻处理时室内表面的条件几乎总是相同的频率来实现。

公开(公告)号：US5332880A

公开(公告)日：1994-07-26

申请号：US40348

申请日：1993-03-30

申请人： Masafumi Kubota ,  Kenji Harafuji ,  Tokuhiko Tamaki ,  Mitsuhiro Ohkuni ,  Noboru Nomura ,  Ichiro Nakayama

发明人： Masafumi Kubota ,  Kenji Harafuji ,  Tokuhiko Tamaki ,  Mitsuhiro Ohkuni ,  Noboru Nomura ,  Ichiro Nakayama

IPC分类号： C23C16/509 ,  H01J37/32 ,  H05H1/46 ,  B23K9/00 ,  H01L21/306

CPC分类号： H01J37/32091 ,  C23C16/509 ,  H01J37/32165 ,  H01J37/32623 ,  H05H1/46 ,  Y10S977/724 ,  Y10S977/844

摘要： At lateral sides of a plasma generating part under a vacuum, first to fourth lateral electrodes are so disposed as to surround the plasma generating part. High frequency electric power is supplied to the first lateral electrode from a first high frequency power supply, high frequency electric power is supplied to the second lateral electrode from the first high frequency power supply through a first delay circuit, high frequency electric power is supplied to the third lateral electrode from the first high frequency power supply through the first delay circuit and through a second delay circuit, and high frequency electric power is supplied to the fourth lateral electrode from the first high frequency power supply through the first and second delay circuits and through a third delay circuit. Accordingly, there are respectively applied, to the first to fourth lateral electrodes, the high frequency electric powers of which frequencies are equal to one another and of which phases are successively different from one another, and there is excited, in the plasma generating part, a rotational electric field to cause electrons in the plasma generating part to present rotational motions.

摘要翻译： 在真空下的等离子体产生部分的侧面，第一至第四横向电极被设置成围绕等离子体产生部分。 从第一高频电源向第一横向电极提供高频电力，通过第一延迟电路从第一高频电源向第二横向电极提供高频电力，将高频电力供给至 来自第一高频电源的第三横向电极通过第一延迟电路和第二延迟电路，并且高频电力通过第一和第二延迟电路从第一高频电源提供给第四横向电极;以及 通过第三个延迟电路。 因此，分别向第一至第四横向电极施加频率彼此相等且相位相互不同的高频电力，并且在等离子体产生部分中激发， 使等离子体产生部中的电子产生旋转运动的旋转电场。

公开(公告)号：US20070074815A1

公开(公告)日：2007-04-05

申请号：US11607895

申请日：2006-12-04

申请人： Mitsuhiro Ohkuni

发明人： Mitsuhiro Ohkuni

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32091 ,  C23F4/00 ,  H01J37/321 ,  H01L21/32136 ,  H01L21/32139

摘要： A plasma etching apparatus includes: a chamber capable of reducing pressure; a substrate support provided inside the chamber to place a substrate; a first electrode which is arranged outside and in proximity to the chamber and to which high frequency power is applied to generate plasma of an etching gas in the chamber; and a second electrode comprising a plurality of separated electrodes which are arranged between the chamber and the first electrode and to each of which high frequency power is applied independently.

摘要翻译： 等离子体蚀刻装置包括：能够减小压力的室; 设置在所述腔室内以放置衬底的衬底支撑件; 布置在所述室的外部并且靠近所述室的第一电极，并且施加高频功率以在所述室中产生蚀刻气体的等离子体; 以及第二电极，其包括布置在所述腔室和所述第一电极之间的多个分离的电极，并且独立地施加每个所述高频功率。

公开(公告)号：US20060286806A1

公开(公告)日：2006-12-21

申请号：US11471700

申请日：2006-06-21

申请人： Mitsuhiro Ohkuni ,  Keiichi Matsunaga

发明人： Mitsuhiro Ohkuni ,  Keiichi Matsunaga

IPC分类号： B08B6/00 ,  H01L21/302

CPC分类号： H01L21/31116

摘要： The plasma etching method first forms a coating film on the inner surface of the chamber. Next, an etching process is performed on a wafer under a condition in which the coating film is formed, and thereafter a reaction product adhered onto the coating film in the etching process is removed together with the coating film. Each of these processes is implemented at a frequency in which the condition of the chamber inner surface is nearly always the same at the time of initiating the etching process.

公开(公告)号：US20050199343A1

公开(公告)日：2005-09-15

申请号：US11009005

申请日：2004-12-13

申请人： Mitsuhiro Ohkuni

发明人： Mitsuhiro Ohkuni

IPC分类号： H01L21/3065 ,  C23F1/00 ,  H01L21/8246 ,  H01L27/105

CPC分类号： H01J37/32091 ,  C23F4/00 ,  H01J37/321 ,  H01L21/32136 ,  H01L21/32139

摘要： A plasma etching apparatus includes: a chamber capable of reducing pressure; a substrate support provided inside the chamber to place a substrate; a first electrode which is arranged outside and in proximity to the chamber and to which high frequency power is applied to generate plasma of an etching gas in the chamber; and a second electrode comprising a plurality of separated electrodes which are arranged between the chamber and the first electrode and to each of which high frequency power is applied independently.

摘要翻译： 等离子体蚀刻装置包括：能够减小压力的室; 设置在所述腔室内以放置衬底的衬底支撑件; 布置在所述室的外部并且靠近所述室的第一电极，并且施加高频功率以在所述室中产生蚀刻气体的等离子体; 以及第二电极，其包括布置在所述腔室和所述第一电极之间的多个分离的电极，并且独立地施加每个所述高频功率。

公开(公告)号：US20090159209A1

公开(公告)日：2009-06-25

申请号：US12354994

申请日：2009-01-16

申请人： Mitsuhiro OHKUNI ,  Keiichi Matsunaga

发明人： Mitsuhiro OHKUNI ,  Keiichi Matsunaga

IPC分类号： C23F1/08

CPC分类号： H01L21/31116

摘要： The plasma etching method first forms a coating film on the inner surface of the chamber. Next, an etching process is performed on a wafer under a condition in which the coating film is formed, and thereafter a reaction product adhered onto the coating film in the etching process is removed together with the coating film. Each of these processes is implemented at a frequency in which the condition of the chamber inner surface is nearly always the same at the time of initiating the etching process.

摘要翻译： 等离子体蚀刻方法首先在腔室的内表面上形成涂膜。 接下来，在形成涂膜的条件下对晶片进行蚀刻处理，然后与涂膜一起除去在蚀刻工艺中附着在涂膜上的反应产物。 这些处理中的每一个以在开始蚀刻处理时室内表面的条件几乎总是相同的频率来实现。

公开(公告)号：US20070004208A1

公开(公告)日：2007-01-04

申请号：US11476571

申请日：2006-06-29

申请人： Mitsuhiro Ohkuni

发明人： Mitsuhiro Ohkuni

IPC分类号： C23F1/00 ,  H01L21/302

CPC分类号： C23F4/00 ,  H01J37/321 ,  H01J37/32522 ,  H01L21/32136

摘要： The plasma processing apparatus is provided with a chamber comprising a dielectric wall at the position opposing an object to be processed. A flat coil arranged exterior of the dielectric wall creates an induction magnetic field for generating the plasma. A plate-shaped electrode capable of functioning as a Faraday shield is arranged between the flat coil and the dielectric wall. And the apparatus provide with a heating unit configured to heat the periphery of the dielectric wall. The apparatus can prevent reaction products from adhering to the periphery of a dielectric wall by increasing the periphery temperature of the dielectric wall during an etching process, and suppressing the generation of particles.

摘要翻译： 等离子体处理装置设置有在与待处理物体相对的位置处具有电介质壁的室。 布置在电介质壁外部的扁平线圈产生用于产生等离子体的感应磁场。 在扁平线圈和电介质壁之间设置能够作为法拉第屏蔽的板状电极。 并且该装置提供配置成加热电介质壁的周边的加热单元。 该设备可以通过在蚀刻工艺期间增加电介质壁的周围温度并抑制颗粒的产生来防止反应产物附着到电介质壁的周边。

公开(公告)号：US06355183B1

公开(公告)日：2002-03-12

申请号：US09383417

申请日：1999-08-26

申请人： Mitsuhiro Ohkuni

发明人： Mitsuhiro Ohkuni

IPC分类号： B44C122

CPC分类号： H01J37/321 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/32137

摘要： In a chamber, there are provided a sample stage on which a semiconductor substrate is placed, a gas inlet port for introducing etching gas, and a gas outlet port for exhausting the gas. A slide valve having a valve element which rotates relative to a valve seat is provided between the sample stage and the gas outlet port to adjust the amount of gas exhausted from the gas outlet port with the rotation of the valve element. A spiral coil for generating a high-frequency induction field and thereby changing the etching gas into a plasma is rotatably provided over the chamber. Rotative driving means rotates the spiral coil in response to the rotation of the valve element of the slide valve such that the higher-voltage region of the spiral coil approximately coincides with the exhaust-side region of the slide valve.

摘要翻译： 在室内设置有放置半导体衬底的样品台，用于引入蚀刻气体的气体入口和用于排出气体的气体出口。 具有相对于阀座旋转的阀元件的滑阀设置在样品台和气体出口之间，以随着阀元件的旋转调节从气体出口排出的气体量。 用于产生高频感应场，从而将刻蚀气体改变为等离子体的螺旋线圈可旋转地设置在腔室上。 旋转驱动装置响应于滑阀的阀元件的旋转而使螺旋线圈旋转，使得螺旋线圈的较高电压区域与滑阀的排气侧区域大致重合。

公开(公告)号：US06187688B1

公开(公告)日：2001-02-13

申请号：US09142252

申请日：1998-09-18

申请人： Mitsuhiro Ohkuni ,  Shunsuke Kugo ,  Tomoyuki Sasaki ,  Kenji Tateiwa ,  Hideo Nikoh

发明人： Mitsuhiro Ohkuni ,  Shunsuke Kugo ,  Tomoyuki Sasaki ,  Kenji Tateiwa ,  Hideo Nikoh

IPC分类号： H01L2100

CPC分类号： G03F7/091 ,  H01L21/31138 ,  H01L21/32139

摘要： After an organic bottom anti-reflective coating (12) is deposited on an underlying film (11), a resist pattern (15) is formed on the organic bottom anti-reflective coating (12). Dry etching is performed with respect to the organic bottom anti-reflective coating (12) masked with the resist pattern (15) to form an anti-reflective coating pattern. The dry-etching of the organic bottom anti-reflective coating (12) is performed by using etching gas containing gas having the S component such as SO2/O2-based etching gas or COS/O2-based etching gas.

摘要翻译： 在有机底部抗反射涂层（12）沉积在下面的膜（11）上之后，在有机底部抗反射涂层（12）上形成抗蚀剂图案（15）。 相对于用抗蚀剂图案（15）掩蔽的有机底部防反射涂层（12）进行干蚀刻以形成抗反射涂层图案。 有机底部防反射涂层（12）的干蚀刻是通过使用含有S成分的气体的蚀刻气体，例如基于SO 2 / O 2的蚀刻气体或COS / O2系蚀刻气体进行的。

公开(公告)号：US5424905A

公开(公告)日：1995-06-13

申请号：US40297

申请日：1993-03-30

申请人： Noboru Nomura ,  Kenji Harafuji ,  Masafumi Kubota ,  Tokuhiko Tamaki ,  Mitsuhiro Ohkuni ,  Ichiro Nakayama

发明人： Noboru Nomura ,  Kenji Harafuji ,  Masafumi Kubota ,  Tokuhiko Tamaki ,  Mitsuhiro Ohkuni ,  Ichiro Nakayama

IPC分类号： H01J37/32 ,  H01J37/317

CPC分类号： H01J37/32302 ,  H01J37/32192 ,  H01J2237/3341

摘要： Three electrodes are disposed at lateral sides of a plasma generating chamber of an etching apparatus serving as a plasma generating apparatus. A sample stage is disposed at a lower part of the plasma generating chamber, and an opposite electrode is disposed at an upper part thereof. High frequency electric power having a first frequency is supplied to the sample stage and the opposite electrode. Respectively supplied to the three electrodes 4, 5, 6 are high frequency electric powers which are oscillated by a three-phase magnetron, which have a second frequency different from the first frequency and of which respective phases are successively different by about 120.degree. from one another, thus forming a rotational electric field in the plasma generating chamber.

摘要翻译： 在作为等离子体发生装置的蚀刻装置的等离子体发生室的侧面设置三个电极。 样品台设置在等离子体发生室的下部，相对电极设置在其上部。 具有第一频率的高频电力被提供给样品台和相对电极。 分别提供给三个电极4,5,6的是​​由三相磁控管振荡的高频电力，三相磁控管具有与第一频率不同的第二频率，并且各相相互相差约120度 从而在等离子体发生室中形成旋转电场。