Abstract:
A spring wire with a hardness of 50 to 56 HRC is subjected to first and second shot peening processes within a warm working temperature range of 150° C. to 350° C. In the first shot peening process, a first shot of a shot size of at least 1.0 mm is used. In the second shot peening process, a second shot smaller in shot size than the first shot is used. Through these shot peening processes, compressive residual stress is imparted to the spring wire. The spring wire includes a residual stress increase part, residual stress peak part, and residual stress decrease part. In the residual stress decrease part, a part including a compressive residual stress magnitude equivalent to the magnitude of the compressive residual stress at a surface of the spring wire exists at a region at a depth exceeding the permissible pit depth.
Abstract:
Provided is a liquid crystal display device includes an optical switching member; a light guide plate made of a thermoplastic material, which includes at least one light introducing portion on at least one side surface thereof; and a light source disposed on the at least one side surface, in which: the at least one light introducing portion includes, in plan view of the light guide plate: a first portion extending from a light incident surface, which is an end surface of the at least one light introducing portion, while keeping a substantially constant width; and a second portion, which extends from the first portion and has a form which widens; and at least the second portion is connected to a front surface of the light guide plate through an inclined surface which is smoothly continuous with the front surface of the light guide plate.
Abstract:
A cathode ray tube including an electron gun including a cathode and a plurality of electrodes and for generating an electron beam, a phosphor screen and an electron beam deflection device. The cathode ray tube includes a deflection-defocusing correcting member having laminated nonmagnetic and magnetic materials disposed in a deflection magnetic field produced by the electron beam deflection device for establishing at least one non-uniform magnetic field. The magnetic materials are disposed at positions with respect to a path of the electron beam where a magnetic flux density of said deflection magnetic field is more than five per cent of a maximum magnetic flux density of the deflection magnetic field.
Abstract:
A color cathode ray tube includes a panel section having an internal surface with a phosphor layer formed thereon and a neck portion accommodating therein an electron gun assembly for emission of a plurality of electron beams plus a funnel section connecting the panel section and the neck portion together, wherein the electron gun assembly is designed to have a plate-shaped electrode with a plurality of electron beam passage holes corresponding in the number to the electron beams. The plate electrode has cylindrical bulged portions projecting in a way corresponding to the plurality of electron beams, each of which portion has its top face in which an electron beam opening or hole is formed. The present invention provides a color cathode ray tube comprising a readily manufacturable high-resolution electron gun assembly.
Abstract:
A color cathode ray tube having an electron gun which includes a one piece electrode plate. The one piece electrode plate has three beam passage holes in an in-line arrangement and bead supports. The one piece electrode plate has two portions including a portion having the beam passage holes and a portion having the bead supports which are formed as a one piece structure. The portion having the beam passage holes has a thickness larger than a thickness of the bead supports portion and the one piece structure has steps and continuous walls between the two portions.
Abstract:
It has been pointed out that the avalanche breakdown voltage of a photodetector comprising an avalanche layer formed by selective epitaxial growth considerably fluctuates. A N.sup.+ --Si buried layer and a N--Si epitaxial layer 3 are successively formed on a P--Si substrate. A cavity is formed in the N--Si epitaxial layer, and a SiO.sub.2 layer is grown in the empty space of the cavity. Then, the SiO.sub.2 layer is etched by dry etching, and a SiO.sub.2 layer is left behind on the side wall of the cavity. Next, a P--Si diffusion layer (an avalanche layer) is formed on the N.sup.+ --Si buried layer by P ion implantation. Subsequently, A SiGe/Si layer (an absorption layer) is selectively grown, and a P.sup.+ --Si layer (an electrode layer) is selectively grown thereon.
Abstract:
An optical waveguide layer in a semiconductor photodetector includes a first interface in contact directly with a first insulation layer and a second interface in contact directly with a second insulation layer, wherein each of the first and second insulation layers is much lower in refractive index than any parts of the optical waveguide layer so that a light being propagated through the optical waveguide layer reflects at the first and second interfaces without any permeation into the first and second insulation layers.
Abstract:
An optical part fixing chip in accordance with the present invention comprises: a guide trench bored in a substrate and having one end thereof abutted on one side of the chip; and a stepped area abutting on one end of the guide trench and extending along one side of the optical part fixing chip. The height of the step of the stepped area is the same as the depth of the guide trench.
Abstract:
A spring wire with a hardness of 50 to 56 HRC is subjected to first and second shot peening processes within a warm working temperature range of 150 to 350° C. In the first shot peening process, a first shot of a shot size of at least 1.0 mm is used. In the second shot peening process, a second shot smaller in shot size than the first shot is sued. Through these shot peening processes, compressive residual stress is imparted to the spring wire. The spring wire includes a residual stress increase part, residual stress peak part, and residual stress decrease part. In the residual stress decrease part, a part including a compressive residual stress magnitude equivalent to the magnitude of the compressive residual stress at a surface of the spring wire exists at a region at a depth exceeding the permissible pit depth.