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1.发明授权Cathode ray tube having one piece electrode plate with inclined and continuous steps 失效阴极射线管具有一个具有倾斜和连续台阶的电极板公开(公告)号：US06222310B1
公开(公告)日：2001-04-24
申请号：US09498616
申请日：2000-02-07
申请人： Takeshi Mera , Satoru Endo , Mitsuhiro Sugiyama
发明人： Takeshi Mera , Satoru Endo , Mitsuhiro Sugiyama
IPC分类号： H01J2950
CPC分类号： H01J29/485 , H01J9/14 , H01J2229/4824
摘要： A color cathode ray tube having an electron gun which includes a one piece electrode plate. The one piece electrode plate has three beam passage holes in an in-line arrangement and bead supports. The one piece electrode plate has two portions including a portion having the beam passage holes and a portion having the bead supports which are formed as a one piece structure. The portion having the beam passage holes has a thickness larger than a thickness of the bead supports portion and the one piece structure has steps and continuous walls between the two portions.
摘要翻译： 一种具有电子枪的彩色阴极射线管，其包括一片电极板。 一体式电极板具有三个沿直线排列的光束通过孔和珠支撑。 一体式电极板具有两部分，包括具有光束通过孔的部分和具有形成为一体结构的凸缘支撑部分。 具有光束通过孔的部分的厚度大于胎圈支撑部分的厚度，并且一体结构在两部分之间具有台阶和连续的壁。
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2.发明授权
公开(公告)号：US6040655A
公开(公告)日：2000-03-21
申请号：US64639
申请日：1993-05-21
申请人： Takeshi Mera , Satoru Endo , Mitsuhiro Sugiyama
发明人： Takeshi Mera , Satoru Endo , Mitsuhiro Sugiyama
CPC分类号： H01J29/485 , H01J9/14 , H01J2229/4824
摘要： A cathode-ray tube having an electron gun which includes an electrode plate (E) in which a portion having three beam passage holes (H) and a portion having bead supports (S) are formed as a unitary or one piece structure, the two portions having different thicknesses (T.sub.1, T.sub.2), and the steps being inclinedly formed along the boundaries of the two portions. Since the portion having beam passage holes and the portion having bead supports are formed as a unitary or one piece structure easily and highly precisely in the electrode plate, the conventionally employed process of welding can be omitted, and thereby the productivity is raised and the manufacturing cost is decreased. Moreover, use of the material having the steps formed in advance contributes to increasing the productivity and preventing the machining tools from being damaged during the press-forming.
摘要翻译： 一种具有电子枪的阴极射线管，其包括电极板（E），其中具有三个光束通过孔（H）的部分和具有珠支撑件（S）的部分形成为一体或一体结构， 具有不同厚度（T1，T2）的部分，并且沿两个部分的边界倾斜地形成台阶。 由于具有光束通过孔的部分和具有焊道支撑部分的部分在电极板中容易且高度精确地形成为整体或单件结构，因此可以省略常规使用的焊接工艺，从而提高生产率并且制造 成本下降。 此外，预先形成的步骤的材料的使用有助于提高生产率，并且防止加工工具在压制成形期间被损坏。
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3.发明授权
公开(公告)号：US5522750A
公开(公告)日：1996-06-04
申请号：US450707
申请日：1995-05-25
申请人： Takeshi Mera , Satoru Endo , Mitsuhiro Sugiyama
发明人： Takeshi Mera , Satoru Endo , Mitsuhiro Sugiyama
CPC分类号： H01J29/485 , H01J9/14 , H01J2229/4824
摘要： A cathode-ray tube having an electron gun which includes an electrode plate (E) in which a portion having three beam passage holes (H) and a portion having bead supports (S) are formed as a unitary structure, the two portions having different thicknesses (T.sub.1, T.sub.2), and the steps being inclinedly formed along the boundaries of the two portions. Since the portion having beam passage holes and the portion having bead supports are formed as a unitary structure easily and highly precisely in the electrode plate, the conventionally employed process of welding can be omitted, and thereby the productivity is raised and the manufacturing cost is decreased. Moreover, use of the material having the steps formed in advance contributes to increasing the productivity and preventing the machining tools from being damaged during the press-forming.
摘要翻译： 一种具有电子枪的阴极射线管，其包括电极板（E），其中具有三个光束通过孔（H）的部分和具有珠支撑体（S）的部分形成为一体结构，所述两个部分具有不同的 厚度（T1，T2），并且沿两个部分的边界倾斜地形成台阶。 由于具有光束通过孔的部分和具有焊道支撑部分的部分在电极板中容易且高度精确地形成为一体结构，所以可以省略常规使用的焊接工艺，从而提高生产率并降低制造成本 。 此外，预先形成的步骤的材料的使用有助于提高生产率，并且防止加工工具在压制成形期间被损坏。
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公开(公告)号：US5637956A
公开(公告)日：1997-06-10
申请号：US262974
申请日：1994-06-21
CPC分类号： H01J29/503 , H01J2229/4862 , H01J2229/4872
摘要： An electron beam aperture of a second grid electrode of a color cathode ray tube is a rectangular hole formed in the center of a slit-like recess having longer sides extending in the horizontal direction. The vertical width of the rectangular hole is greater than the width of each shorter side of the slit-like recess.
摘要翻译： 彩色阴极射线管的第二栅极的电子束孔是形成在具有在水平方向上延伸的较长边的狭缝状凹部的中心的矩形孔。 矩形孔的垂直宽度大于狭缝状凹部的每个短边的宽度。
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公开(公告)号：US20050059370A1
公开(公告)日：2005-03-17
申请号：US10884078
申请日：2004-07-02
摘要： In a broadcast receiving system, a first antenna receives a broadcast signal of a first frequency band and a second antenna receives a signal of a second frequency band different from the first frequency band. A frequency conversion unit converts the signal of the second frequency band into a second signal of the first frequency band. A selection unit selects one of the broadcast signal output from the first antenna and the second signal output from the frequency conversion unit. A demodulation unit demodulates the one of the broadcast signal and the second signal selected by the selection unit.
摘要翻译： 在广播接收系统中，第一天线接收第一频带的广播信号，第二天线接收与第一频带不同的第二频带的信号。 频率转换单元将第二频带的信号转换为第一频带的第二信号。 选择单元选择从第一天线输出的广播信号和从频率转换单元输出的第二信号之一。 解调单元解调由选择单元选择的广播信号和第二信号之一。
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6.发明授权Method and apparatus for fabricating semiconductor device with photodiode 失效用于制造具有光电二极管的半导体器件的方法和装置
公开(公告)号：US5747860A
公开(公告)日：1998-05-05
申请号：US613077
申请日：1996-03-08
IPC分类号： G02B6/42 , H01L31/0232 , H01L31/0352 , H01L31/103 , H01L31/18
CPC分类号： B82Y20/00 , G02B6/42 , G02B6/4212 , G02B6/423 , H01L31/0232 , H01L31/035254 , H01L31/103 , H01L31/1812 , G02B6/4239 , Y02E10/50
摘要： On a surface of a silicon substrate, N.sup.+ type buried layer and N-type epitaxial layer are formed in order, and an isolation layer reaching the silicon substrate from the surface of the N-type epitaxial layer is formed to define a photodiode. In the surface of the photodiode, a rectangular recess is selectively formed toward inside of the N-type epitaxial layer. On the side face of the recess, a silicon oxide layer is formed. In the region surrounded by the silicon oxide layer, a photo absorbing layer and so forth is formed. On the other hand, in an optical waveguide, a LOCOS oxide layer is formed toward inside from the surface of the N-type epitaxial layer. The N-type epitaxial layer is sandwiched between the LOCOS oxide layer and the N.sup.+ type buried layer. The refraction indexes of the LOCOS oxide layer and the N.sup.+ type buried layer are smaller than that of the N-type epitaxial layer. Thus, the N-type epitaxial layer serves as an optical passage to efficiently introduce a light beam into the photo absorbing layer of the photodiode.
摘要翻译： 在硅衬底的表面上依次形成N +型掩埋层和N型外延层，并且形成从N型外延层的表面到达硅衬底的隔离层以限定光电二极管。 在光电二极管的表面上，朝向N型外延层的内侧选择性地形成矩形凹部。 在凹部的侧面上形成氧化硅层。 在由氧化硅层包围的区域中，形成光吸收层等。 另一方面，在光波导中，从N型外延层的表面向内侧形成LOCOS氧化物层。 N型外延层夹在LOCOS氧化物层和N +型掩埋层之间。 LOCOS氧化物层和N +型掩埋层的折射率小于N型外延层的折射率。 因此，N型外延层用作有效地将光束引入到光电二极管的光吸收层中的光通路。
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公开(公告)号：US5637513A
公开(公告)日：1997-06-10
申请号：US499493
申请日：1995-07-07
申请人： Mitsuhiro Sugiyama
发明人： Mitsuhiro Sugiyama
IPC分类号： H01L21/331 , H01L29/73 , H01L21/265
CPC分类号： H01L29/66265 , H01L29/7317
摘要： A fabrication method of a semiconductor device that can realize a semiconductor device having an improved radiation performance of heat together with a low parasitic capacitance between a semiconductor substrate and a conductor of the device. An SOI structure having a single-crystal silicon layer formed on an insulating substructure is prepared and then, device regions are formed on the substructure by using the single-crystal silicon layer. Sidewall insulators are formed to cover side faces of the respective device regions, laterally isolating the device regions from each other. A resistive silicon layer is formed on a non-device region of the substructure. The resistive silicon layer has a resistivity or specific resistance greater than that of the device regions. Electronic elements are formed in the device regions. The resistive silicon layer may be made of polysilicon or single-crystal silicon.
摘要翻译： 一种半导体器件的制造方法，其可以实现具有改善的放射性能的半导体器件以及半导体衬底和器件的导体之间的低寄生电容。 制备在绝缘子结构上形成单晶硅层的SOI结构，然后通过使用单晶硅层在子结构上形成器件区。 形成侧壁绝缘体以覆盖相应的器件区域的侧面，从而将器件区域彼此侧向隔离。 电阻硅层形成在子结构的非器件区域上。 电阻硅层的电阻率或电阻率大于器件区域的电阻率或电阻率。 电子元件形成在器件区域中。 电阻硅层可以由多晶硅或单晶硅制成。
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公开(公告)号：US5451541A
公开(公告)日：1995-09-19
申请号：US340595
申请日：1994-11-16
申请人： Mitsuhiro Sugiyama
发明人： Mitsuhiro Sugiyama
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/66 , H01L21/762 , H01L27/12 , H01L21/20
CPC分类号： H01L22/12
摘要： An insulating film is provided on a single crystal silicon layer of a SOI substrate, and a first groove for device isolation and a second groove for thickness measurement are formed to expose a surface of a silicon substrate of the SOI substrate. Then, the first and second grooves are filled with a filling film, and the filling film is etched back, so that the first groove is still filled with the filling film, while the filling film which have filled the second groove is removed to expose the surface of the silicon substrate, because the second groove has a width larger than that of the first groove.
摘要翻译： 在SOI衬底的单晶硅层上设置绝缘膜，形成用于器件隔离的第一沟槽和用于厚度测量的第二沟槽，以暴露SOI衬底的硅衬底的表面。 然后，第一和第二槽填充有填充膜，并且填充膜被回蚀刻，使得第一凹槽仍然填充有填充膜，同时去除填充第二凹槽的填充膜以暴露 因为第二槽的宽度大于第一槽的宽度。
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9.发明授权
公开(公告)号：US5296391A
公开(公告)日：1994-03-22
申请号：US67017
申请日：1993-05-26
IPC分类号： H01L21/331 , H01L29/732 , H01L29/737 , H01L21/265
CPC分类号： H01L29/66287 , H01L29/66242 , H01L29/732 , H01L29/7378 , Y10S148/01
摘要： A method of manufacturing a semiconductor device includes a monocrystalline semiconductor layer of one conductivity type with a first insulating film covering the semiconductor layer. An aperture is selectively formed in the first insulating film to expose a part of the semiconductor layer. A first polycrystalline semiconductor film of an opposite conductivity type is formed on the first insulating film and has an overhang portion projecting over the aperture from an edge of the first insulating film defining the aperture. A second polycrystalline semiconductor film and a monocrystalline semiconductor film of the opposite conductivity type are grown simultaneously on a bottom surface of the overhang portion of the first polycrystalline semiconductor film and on the part of the monocrystalline semiconductor layer respectively until monocrystalline semiconductor film is in contact with the second polycrystalline semiconductor film, with a second insulating film selectively formed on the monocrystalline semiconductor film with leaving a part thereof to be exposed.
摘要翻译： 半导体器件的制造方法包括具有覆盖半导体层的第一绝缘膜的一种导电型单晶半导体层。 在第一绝缘膜中选择性地形成孔径以暴露半导体层的一部分。 具有相反导电型的第一多晶半导体膜形成在第一绝缘膜上，并且具有从限定孔的第一绝缘膜的边缘在孔上突出的突出部分。 在第一多晶半导体膜的突出部分的底表面和单晶半导体层的一部分上同时生长具有相反导电类型的第二多晶半导体膜和单晶半导体膜，直到单晶半导体膜与 所述第二多晶半导体膜具有选择性地形成在所述单晶半导体膜上并使其一部分露出的第二绝缘膜。
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公开(公告)号：US08848138B2
公开(公告)日：2014-09-30
申请号：US13116048
申请日：2011-05-26
IPC分类号： G02F1/1335 , F21V8/00
CPC分类号： G02B6/003 , G02B6/0016 , G02B6/0028 , G02B6/0038 , G02B6/0068 , G02F1/133514 , G02F1/133524 , G02F1/133603 , G02F1/133615 , G02F1/1368
摘要： Provided is a liquid crystal display device includes an optical switching member; a light guide plate made of a thermoplastic material, which includes at least one light introducing portion on at least one side surface thereof; and a light source disposed on the at least one side surface, in which: the at least one light introducing portion includes, in plan view of the light guide plate: a first portion extending from a light incident surface, which is an end surface of the at least one light introducing portion, while keeping a substantially constant width; and a second portion, which extends from the first portion and has a form which widens; and at least the second portion is connected to a front surface of the light guide plate through an inclined surface which is smoothly continuous with the front surface of the light guide plate.
摘要翻译： 提供一种液晶显示装置，包括光开关元件; 由热塑性材料制成的导光板，其在至少一个侧表面上包括至少一个光引入部分; 以及设置在所述至少一个侧表面上的光源，其中：所述至少一个光导入部在所述导光板的平面图中包括从作为所述导光板的端面的光入射面延伸的第一部分 所述至少一个光导入部保持基本恒定的宽度; 以及第二部分，其从第一部分延伸并且具有变宽的形式; 并且至少第二部分通过与导光板的前表面平滑连续的倾斜表面连接到导光板的前表面。
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