公开(公告)号：US3975648A

公开(公告)日：1976-08-17

申请号：US587188

申请日：1975-06-16

申请人： Morley C. Tobey, Jr. ,  David J. Giuliani ,  Peter B. Ashkin

发明人： Morley C. Tobey, Jr. ,  David J. Giuliani ,  Peter B. Ashkin

IPC分类号： H01L27/04 ,  G05F3/24 ,  H01L21/822 ,  H01L29/47 ,  H01L29/78 ,  H03K1/12 ,  H03K1/00 ,  H03K1/02 ,  H03K3/353

CPC分类号： H01L29/47 ,  G05F3/245 ,  G05F3/247

摘要： A flat-band voltage reference includes two insulated-gate field-effect transistors, hereinafter IGFETs, which are substantially identical except for their flat-band voltage characteristics and which are biased to carry equal drain currents at equal drain voltages. The resulting difference in potential between the gate contacts of the IGFETs produces a voltage reference which is substantially independent of variances in operating points, supply potentials, and temperature.

摘要翻译： 平带电压基准包括两个绝缘栅场效应晶体管（以下称为IGFET），除了它们的平带电压特性之外基本相同，并且在相等的漏极电压下偏置为承载相等的漏极电流。 IGFET的栅极接触之间的电位差产生基本上与工作点，电源电位和温度方差无关的电压基准。

公开(公告)号：US3952205A

公开(公告)日：1976-04-20

申请号：US526872

申请日：1974-11-25

申请人： Morley C. Tobey, Jr. ,  David F. Colicchio

发明人： Morley C. Tobey, Jr. ,  David F. Colicchio

IPC分类号： H03H11/02 ,  H04B10/00 ,  H04B9/00 ,  H03K19/14

CPC分类号： H04B10/802

摘要： A light emitting diode is driven by an input signal and electromagnetically coupled to a photodiode. The photodiode is connected to a high impedance load across which is obtained a signal linearly related to but electrically isolated from the input signal.

摘要翻译： 发光二极管由输入信号驱动并与光电二极管电磁耦合。 光电二极管被连接到高阻抗负载，在该高阻抗负载上获得与输入信号线性相关但与电绝缘的信号。

公开(公告)号：US4170818A

公开(公告)日：1979-10-16

申请号：US838689

申请日：1977-10-03

申请人： Morley C. Tobey, Jr. ,  David J. Giuliani ,  Peter B. Ashkin

发明人： Morley C. Tobey, Jr. ,  David J. Giuliani ,  Peter B. Ashkin

IPC分类号： G05F3/24 ,  H01L21/8234 ,  H01L27/095 ,  H01L27/098 ,  H01L29/20 ,  H01L29/22 ,  H01L29/24 ,  H01L29/43 ,  H01L29/47 ,  B01J17/00

CPC分类号： G05F3/247 ,  G05F3/245 ,  H01L21/82345 ,  H01L27/095 ,  H01L27/098 ,  H01L29/20 ,  H01L29/22 ,  H01L29/2203 ,  H01L29/24 ,  H01L29/245 ,  H01L29/432 ,  H01L29/47 ,  H01L29/475

摘要： A barrier height voltage reference includes two field-effect transistors which are substantially identical except for their gate-to-channel potential barrier characteristics and which are biased to carry equal drain currents at equal drain voltages. The resulting difference in potential between the gate contacts of the two field effect transistors produces a voltage reference which is substantially independent of operating point, supply potential, and temperature.

公开(公告)号：US4068134A

公开(公告)日：1978-01-10

申请号：US674453

申请日：1976-04-07

申请人： Morley C. Tobey, Jr. ,  David J. Giuliani ,  Peter B. Ashkin

发明人： Morley C. Tobey, Jr. ,  David J. Giuliani ,  Peter B. Ashkin

IPC分类号： H01L27/04 ,  G05F3/24 ,  H01L21/822 ,  H01L29/47 ,  H01L29/78 ,  H03K1/12 ,  H01L27/02 ,  H01L29/80 ,  H03K3/353

CPC分类号： H01L29/47 ,  G05F3/245 ,  G05F3/247

摘要： A barrier height voltage reference includes two field-effect transistors which are substantially identical except for their gate-to-channel potential barrier characteristics and which are biased to carry equal drain currents at equal drain voltages. The resulting difference in potential between the gate contacts of the two field effect transistors produces a voltage reference which is substantially independent of operating point, supply potential, and temperature.

摘要翻译： 势垒高度参考电压包括两个场效应晶体管，除了它们的栅极至沟道势垒特性之外基本上相同，并且在相等的漏极电压下偏置为承载相等的漏极电流。 两个场效应晶体管的栅极触点之间的电位差产生基本上与工作点，电源电位和温度无关的电压基准。