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公开(公告)号:US12132026B2
公开(公告)日:2024-10-29
申请号:US18685871
申请日:2022-10-18
发明人: Tomohiro Uno , Tetsuya Oyamada , Daizo Oda , Motoki Eto
IPC分类号: H01L23/00 , G01N23/203 , G01N23/2276
CPC分类号: H01L24/45 , H01L24/43 , G01N23/203 , G01N23/2276 , G01N2223/601 , G01N2223/602 , G01N2223/611 , H01L2224/4321 , H01L2224/437 , H01L2224/43825 , H01L2224/43848 , H01L2224/45147 , H01L2224/45541 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01052 , H01L2924/3512 , H01L2924/365
摘要: A bonding wire includes a core material of Cu or Cu alloy, and a coating layer containing a conductive metal other than Cu on a surface of the core material. In a concentration profile in a depth direction of the wire obtained, an average value of sum of a Pd concentration CPd (atomic %) and an Ni concentration CNi (atomic %) for measurement points in the coating layer is 50 atomic % or more, an average value of a ratio of CPd to CNi for measurement points in the coating layer is from 0.2 to 20 and a thickness of the coating layer is from 20 nm to 180 nm. An Au concentration CAu at a surface of the wire is from 10 atomic % to 85 atomic %. An average size of crystal grains in a circumferential direction of the wire is from 35 nm to 200 nm.
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公开(公告)号:US20230299037A1
公开(公告)日:2023-09-21
申请号:US18022978
申请日:2021-08-24
发明人: Tomohiro UNO , Tetsuya OAMADA , Daizo ODA , Yuto KURIHARA , Ryo OISHI
IPC分类号: H01L23/00
CPC分类号: H01L24/45 , H01L24/43 , H01L2224/45124 , H01L2224/43848 , H01L2924/3511 , H01L2924/35121 , H01L2924/01014 , H01L2924/01021 , H01L2924/0103 , H01L2924/01058 , H01L2924/01026 , H01L2924/01028 , H01L2924/01039 , H01L2924/0104
摘要: There is provided a novel Al wiring material that suppresses an increase in cold strength and exhibits a favorable high-temperature reliability. The Al wiring material contains one or more selected from the group consisting of Er, Yb and Gd so as to satisfy 0.001≤x1≤0.6 where x1 is a total content thereof [% by mass], with the balance comprising Al.
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公开(公告)号:US20230154884A1
公开(公告)日:2023-05-18
申请号:US17916935
申请日:2021-03-29
发明人: Daizo ODA , Takumi OOKABE , Motoki ETO , Noritoshi ARAKI , Ryo OISHI , Teruo HAIBARA , Tomohiro UNO , Tetsuya OYAMADA
IPC分类号: H01L23/00
CPC分类号: H01L24/45 , H01L2224/45139
摘要: There is provided an Ag alloy bonding wire for semiconductor devices which exhibits a favorable bond reliability in a high-temperature environment even when using a mold resin of high S content and can suppress a chip damage at the time of ball bonding. The Ag alloy bonding wire is characterized by containing at least one element selected from the group consisting of Pd and Pt (hereinafter referred to as a “first element”) and at least one element selected from the group consisting of P, Cr, Zr and Mo (hereinafter referred to as a “second element”) so as to satisfy
0.05
≤
x
1
≤
3.0
,
and
15
≤
x
2
≤
700
where x1 is a total concentration of the first element [at.%] and x2 is a total concentration of the second element [at. ppm],
with the balance including Ag.-
公开(公告)号:US20230142531A1
公开(公告)日:2023-05-11
申请号:US17912824
申请日:2020-03-25
发明人: Takashi YAMADA , Akihito NISHIBAYASHI , Teruo HAIBARA , Daizo ODA , Motoki ETO , Tetsuya OYAMADA , Takayuki KOBAYASHI , Tomohiro UNO
IPC分类号: H01L23/00
CPC分类号: H01L24/45 , H01L2224/45124 , H01L2224/45149 , H01L2224/4516 , H01L2224/45171
摘要: There is provided an Al bonding wire which can achieve a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The Al bonding wire is characterized in that the wire contains 0.02 to 1% by mass of Fe, further contains 0.05 to 0.5% by mass in total of at least one or more of Mn and Cr, and the balance includes Al and inevitable impurities, wherein a total content of Fe, Mn and Cr in solid solution is 0.01 to 1% by mass. The Al bonding wire contains Mn and Cr in addition to Fe, so that Fe, Mn and Cr can be promoted to form a solid solution in quenching treatment after the solution treatment. Accordingly, the Al bonding wire can achieve an effect of solid-solution strengthening of the wire due to the increase in the total content of Fe, Mn and Cr in solid solution and an effect of preventing recrystallization from proceeding during use of the semiconductor device at a high temperature for a long time.
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公开(公告)号:US20230018430A1
公开(公告)日:2023-01-19
申请号:US17942838
申请日:2022-09-12
发明人: Daizo ODA , Takashi YAMADA , Motoki ETO , Teruo HAIBARA , Tomohiro UNO
摘要: In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.
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公开(公告)号:US11373934B2
公开(公告)日:2022-06-28
申请号:US16958633
申请日:2017-12-28
发明人: Daizo Oda , Takashi Yamada , Motoki Eto , Teruo Haibara , Tomohiro Uno
摘要: Provided is a Pd coated Cu bonding wire for a semiconductor device capable of sufficiently obtaining bonding reliability of a ball bonded portion in a high temperature environment of 175° C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases.
The bonding wire for a semiconductor device comprises a Cu alloy core material; and a Pd coating layer formed on a surface of the Cu alloy core material; and contains 0.03 to 2% by mass in total of one or more elements selected from Ni, Rh, Ir and Pd in the bonding wire and further 0.002 to 3% by mass in total of one or more elements selected from Li, Sb, Fe, Cr, Co, Zn, Ca, Mg, Pt, Sc and Y. The bonding wire can be sufficiently obtained bonding reliability of a ball bonded portion in a high temperature environment of 175° C. or more, even when the content of sulfur in the mold resin used in the semiconductor device package increases by being used.-
公开(公告)号:US11342299B2
公开(公告)日:2022-05-24
申请号:US16067120
申请日:2016-09-23
发明人: Daizo Oda , Takumi Ohkabe , Teruo Haibara , Takashi Yamada , Tetsuya Oyamada , Tomohiro Uno
摘要: The present invention has as its object the provision of a bonding wire for semiconductor devices mainly comprised of Ag, in which bonding wire for semiconductor devices, the bond reliability demanded for high density mounting is secured and simultaneously a sufficient, stable bond strength is realized at a ball bond, no neck damage occurs even in a low loop, the leaning characteristic is excellent, and the FAB shape is excellent. To solve this problem, the bonding wire for semiconductor devices according to the present invention contains one or more of Be, B, P, Ca, Y, La, and Ce in a total of 0.031 at % to obtain a 0.180 at %, further contains one or more of In, Ga, and Cd in a total of 0.05 at % to 5.00 at %, and has a balance of Ag and unavoidable impurities. Due to this, it is possible to obtain a bonding wire for semiconductor devices sufficiently forming an intermetallic compound layer at a ball bond interface to secure the bond strength of the ball bond, not causing neck damage even in a low loop, having a good leaning characteristic, and having a good FAB shape.
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公开(公告)号:US10991672B2
公开(公告)日:2021-04-27
申请号:US16637653
申请日:2018-08-07
发明人: Tetsuya Oyamada , Tomohiro Uno , Takashi Yamada , Daizo Oda
摘要: The present invention provides a bonding wire for a semiconductor device, where the bonding wire can inhibit wear of capillary. In a Cu alloy bonding wire for a semiconductor device, a total of abundance ratios of a crystal orientations and having an angular difference of 15 degrees or less from a direction perpendicular to one plane including a wire center axis is to crystal orientations on a wire surface 40% or more and 90% or less, in average area percentage.
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公开(公告)号:US10950571B2
公开(公告)日:2021-03-16
申请号:US16313825
申请日:2018-02-14
发明人: Tetsuya Oyamada , Tomohiro Uno , Takashi Yamada , Daizo Oda , Motoki Eto
摘要: The present invention provides a bonding wire for a semiconductor device suitable for cutting-edge high-density LSIs and on-vehicle LSIs by improving the formation rate of Cu—Al IMC in ball bonds. A bonding wire for a semiconductor device contains Pt of 0.1 mass % to 1.3 mass %, at least one dopant selected from a first dopant group consisting of In, Ga, and Ge, for a total of 0.05 mass % to 1.25 mass %, and a balance being made up of Cu and incidental impurities.
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公开(公告)号:US10950570B2
公开(公告)日:2021-03-16
申请号:US15305238
申请日:2015-04-21
发明人: Tetsuya Oyamada , Tomohiro Uno , Hiroyuki Deai
摘要: There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices.
The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 μm.
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