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公开(公告)号：US20240290745A1
公开(公告)日：2024-08-29
申请号：US18572708
申请日：2023-03-23
发明人： Daizo ODA , Motoki ETO , Takashi YAMADA , Teruo HAIBARA , Ryo OISHI
IPC分类号： H01L23/00 , G01N23/203 , G01N23/2276
CPC分类号： H01L24/45 , H01L24/43 , H01L24/85 , G01N23/203 , G01N23/2276 , G01N2223/601 , G01N2223/602 , G01N2223/611 , H01L2224/4321 , H01L2224/437 , H01L2224/43825 , H01L2224/43826 , H01L2224/43848 , H01L2224/45147 , H01L2224/45541 , H01L2224/45565 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/85035 , H01L2224/85203 , H01L2224/85207 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01049 , H01L2924/01051 , H01L2924/01052 , H01L2924/3512 , H01L2924/3651
摘要： The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy and a coating layer containing conductive metal other than Cu formed on a surface of the core material. The coating layer has a region containing Ni as a main component on a core material side, and has a region containing Au and Ni on a wire surface side, in a thickness direction of the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, a ratio of a concentration CAu (mass %) of Au to a concentration CNi (mass %) of Ni relative to the entire wire is 0.02
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公开(公告)号：US20240290743A1
公开(公告)日：2024-08-29
申请号：US18572127
申请日：2022-03-16
发明人： Daizo ODA , Motoki ETO , Takashi YAMADA , Teruo HAIBARA , Ryo OISHI
IPC分类号： H01L23/00 , G01N23/203 , G01N23/2276
CPC分类号： H01L24/45 , H01L24/43 , H01L24/85 , G01N23/203 , G01N23/2276 , G01N2223/601 , G01N2223/602 , G01N2223/611 , H01L2224/4321 , H01L2224/437 , H01L2224/43825 , H01L2224/43848 , H01L2224/45147 , H01L2224/45541 , H01L2224/45565 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/85035 , H01L2224/85203 , H01L2224/85207 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01051 , H01L2924/01052 , H01L2924/3512 , H01L2924/3651
摘要： There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieves a favorable bond reliability of the 2nd bonded part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices is characterized in that the bonding wire includes: a core material of Cu or Cu alloy; and a coating layer containing conductive metal other than Cu formed on a surface of the core material, wherein the coating layer has a region containing Pd as a main component on a core material side, and has a region containing Ni and Pd in a range from a wire surface to a depth of 0.5 d when a thickness of the coating layer is defined as d (nm) in a thickness direction of the coating layer, the thickness d of the coating layer is 10 nm or more and 130 nm or less, a ratio CNi/CPd of a concentration CNi (mass %) of Ni to a concentration CPd (mass %) of Pd relative to the entire wire is 0.02 or more and 0.7 or less, a position indicating a maximum concentration of Ni is present in the range from the wire surface to a depth of 0.5 d in a concentration profile in a depth direction of the wire, and the maximum concentration of Ni is 10 atomic % or more, and at least one of the following conditions (i) and (ii) is satisfied:
(i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less
(ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.-
公开(公告)号：US20170365576A1
公开(公告)日：2017-12-21
申请号：US15537390
申请日：2015-12-11
发明人： Tetsuya OYAMADA , Tomohiro UNO , Daizo ODA , Takashi YAMADA
CPC分类号： H01L24/45 , B23K35/0227 , B23K35/3006 , B23K35/322 , H01L24/05 , H01L24/43 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/43125 , H01L2224/4321 , H01L2224/435 , H01L2224/437 , H01L2224/43825 , H01L2224/43826 , H01L2224/43827 , H01L2224/43848 , H01L2224/45015 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45541 , H01L2224/45565 , H01L2224/45572 , H01L2224/45605 , H01L2224/45609 , H01L2224/45611 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/48451 , H01L2224/48463 , H01L2224/48465 , H01L2224/48507 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85203 , H01L2224/85205 , H01L2924/00011 , H01L2924/01005 , H01L2924/01015 , H01L2924/0102 , H01L2924/01034 , H01L2924/01057 , H01L2924/0132 , H01L2924/10253 , H01L2924/181 , H01L2924/00014 , H01L2924/01031 , H01L2924/01049 , H01L2924/0105 , H01L2924/01029 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01204 , H01L2924/20105 , H01L2924/01001 , H01L2924/01007 , H01L2924/01004 , H01L2924/00012 , H01L2924/00015
摘要： The present invention provides a bonding wire capable of simultaneously satisfying ball bonding reliability and wedge bondability required of bonding wires for memories, the bonding wire including a core material containing one or more of Ga, In, and Sn for a total of 0.1 to 3.0 at % with a balance being made up of Ag and incidental impurities; and a coating layer formed over a surface of the core material, containing one or more of Pd and Pt, or Ag and one or more of Pd and Pt, with a balance being made up of incidental impurities, wherein the coating layer is 0.005 to 0.070 μm in thickness.
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公开(公告)号：US20170323864A1
公开(公告)日：2017-11-09
申请号：US15107417
申请日：2015-06-05
发明人： Daizo ODA , Motoki ETO , Takashi YAMADA , Teruo HAIBARA , Ryo OISHI , Tomohiro UNO , Tetsuya OYAMADA
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , C22C9/00 , C22F1/08 , H01L24/05 , H01L24/43 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/43848 , H01L2224/45 , H01L2224/45005 , H01L2224/45015 , H01L2224/45109 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45609 , H01L2224/45644 , H01L2224/45664 , H01L2224/48011 , H01L2224/48247 , H01L2224/48465 , H01L2224/48507 , H01L2224/48824 , H01L2224/85045 , H01L2224/85054 , H01L2224/85065 , H01L2224/85075 , H01L2224/8509 , H01L2224/85203 , H01L2224/85439 , H01L2924/00011 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01028 , H01L2924/01031 , H01L2924/01032 , H01L2924/01045 , H01L2924/01046 , H01L2924/01078 , H01L2924/10253 , H01L2924/1576 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/20111 , H01L2924/20752 , H01L2924/01204 , H01L2924/01049 , H01L2924/01014 , H01L2924/01029 , H01L2924/013 , H01L2924/00013 , H01L2924/01001 , H01L2924/01007 , H01L2924/20105 , H01L2924/20656 , H01L2924/00 , H01L2924/2011 , H01L2924/01004 , H01L2924/01033
摘要： There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices.The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 μm. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175° C. or more. When an Au skin layer is further formed on a surface of the Pd coating layer, wedge bondability improves.
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公开(公告)号：US20170154863A1
公开(公告)日：2017-06-01
申请号：US15320492
申请日：2015-06-17
发明人： Murali SARANGAPANI , Xi ZHANG , Ping Ha YEUNG , Eugen MILKE
CPC分类号： H01L24/45 , B21C1/003 , B21C1/02 , C22C9/00 , C22F1/08 , H01L24/43 , H01L2224/4321 , H01L2224/43848 , H01L2224/43985 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45686 , H01L2924/01046 , H01L2924/01047 , H01L2924/0541 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/01204 , H01L2924/013 , H01L2924/00 , H01L2924/00015
摘要： A copper wire having a diameter of 10 to 80 μm is provided. The copper wire bulk material is ≧99.99 wt.-% pure copper or a copper alloy consisting of 10 to 1000 wt.-ppm of silver and/or of 0.1 to 3 wt.-% of palladium with copper as the remainder to make up 100 wt.-%, and the copper wire has a 0.5 to
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6.发明授权公开(公告)号：US09536854B2
公开(公告)日：2017-01-03
申请号：US14893833
申请日：2015-03-31
发明人： Takashi Yamada , Daizo Oda , Ryo Oishi , Teruo Haibara , Tomohiro Uno
IPC分类号： H01B5/00 , H01L23/00 , B21C1/00 , C22C5/06 , C22C5/08 , C22F1/00 , C22F1/14 , B23K35/30 , B23K35/02
CPC分类号： H01L24/45 , B21C1/00 , B21C1/003 , B23K35/0227 , B23K35/3006 , C22C5/06 , C22C5/08 , C22F1/00 , C22F1/14 , H01L24/43 , H01L2224/4321 , H01L2224/43848 , H01L2224/45012 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45664 , H01L2924/00011 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/013 , H01L2924/10253 , H01L2924/201 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01049 , H01L2924/01045 , H01L2924/00014 , H01L2924/01005 , H01L2924/01016 , H01L2924/01017 , H01L2924/00015 , H01L2924/01201
摘要： Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis “a” and a short axis “b” of 10 or more and with an area of 15 μm2 or more (“fiber texture”), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%. During the drawing step, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges.
摘要翻译： 用于半导体器件的接合线，其中通过（1）在包含线中心并且平行于线纵向（线中心横截面）的横截面中抑制倾斜故障和弹簧故障，不存在具有 长轴“a”的比率a / b和短轴“b”为10以上，面积为15μm2以上（“纤维织构”），（2）当测定线材纵向的晶体方向 在线中心横截面的方向上，相对于线纵向的角度差为15°以下的晶体方向<100>的面积比为50％〜90％，（3）当 在线表面测定线长方向的晶体方向，晶体方向<100>与线长度方向的角度差为15°以下的面积比为50％〜90％。 在拉伸步骤中，至少进行一次具有15.5％以上的面积减小率的拉拔操作。 将最终的热处理温度和预热处理温度设定为预定范围。
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公开(公告)号：US20160315063A1
公开(公告)日：2016-10-27
申请号：US15105707
申请日：2014-12-04
发明人： Tomohiro UNO , Yoshiaki HAGIWARA , Tetsuya OYAMADA , Daizo ODA
CPC分类号： H01L24/45 , B23K35/3006 , B23K35/302 , B23K35/3033 , B23K35/322 , C22C5/06 , C22C5/08 , C22C9/06 , H01L24/43 , H01L24/48 , H01L2224/05624 , H01L2224/43 , H01L2224/4321 , H01L2224/43848 , H01L2224/45005 , H01L2224/45015 , H01L2224/45032 , H01L2224/45101 , H01L2224/45139 , H01L2224/45147 , H01L2224/45155 , H01L2224/45163 , H01L2224/45164 , H01L2224/45166 , H01L2224/45541 , H01L2224/45572 , H01L2224/45644 , H01L2224/45655 , H01L2224/45664 , H01L2224/4809 , H01L2224/48247 , H01L2224/48465 , H01L2224/85444 , H01L2924/00011 , H01L2924/01005 , H01L2924/01015 , H01L2924/013 , H01L2924/10253 , H01L2924/206 , H01L2924/386 , H01L2924/01046 , H01L2924/01029 , H01L2924/01047 , H01L2924/01022 , H01L2924/01028 , H01L2924/00 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/2076 , H01L2924/00012 , H01L2924/00014 , H01L2924/01049 , H01L2924/01004 , H01L2924/01204 , H01L2924/01033 , H01L2924/01203
摘要： Provided is a bonding wire capable of reducing the occurrence of defective loops. The bonding wire includes: a core material which contains more than 50 mol % of a metal M; an intermediate layer which is formed over the surface of the core material and made of Ni, Pd, the metal M, and unavoidable impurities, and in which the concentration of the Ni is 15 to 80 mol %; and a coating layer formed over the intermediate layer and made of Ni, Pd and unavoidable impurities. The concentration of the Pd in the coating layer is 50 to 100 mol %. The metal M is Cu or Ag, and the concentration of Ni in the coating layer is lower than the concentration of Ni in the intermediate layer.
摘要翻译： 提供能够减少有缺陷环的发生的接合线。 接合线包括：包含大于50摩尔％的金属M的芯材料; 在芯材的表面上形成由Ni，Pd，金属M和不可避免的杂质构成的中间层，其中Ni的浓度为15〜80摩尔％。 以及形成在中间层上并由Ni，Pd和不可避免的杂质构成的涂层。 涂层中Pd的浓度为50〜100摩尔％。 金属M是Cu或Ag，并且涂层中的Ni的浓度低于中间层中的Ni的浓度。
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公开(公告)号：US20160288272A1
公开(公告)日：2016-10-06
申请号：US15038177
申请日：2013-11-21
发明人： Annette LUKAS , Patrick WENZEL , Michael DEUSCHLE , Eugen MILKE , Sven THOMAS , Jürgen SCHARF
CPC分类号： B23K35/40 , B23K20/007 , B23K20/10 , B23K35/0261 , B23K35/0272 , B23K35/30 , B23K35/3006 , B23K35/302 , B23K35/322 , B23K35/404 , B23K2101/42 , C22F1/08 , C23C14/14 , C23C18/08 , C23C28/00 , C23C30/00 , C23F17/00 , C25D5/34 , C25D7/0607 , H01B1/026 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/745 , H01L24/85 , H01L2224/05124 , H01L2224/05624 , H01L2224/4321 , H01L2224/43823 , H01L2224/43825 , H01L2224/43826 , H01L2224/43848 , H01L2224/45014 , H01L2224/45015 , H01L2224/45139 , H01L2224/45147 , H01L2224/45565 , H01L2224/45639 , H01L2224/45644 , H01L2224/45647 , H01L2224/45663 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/45678 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48472 , H01L2224/48824 , H01L2224/85181 , H01L2224/85205 , H01L2224/85444 , H01L2924/00011 , H01L2924/00014 , H01L2924/01076 , H01L2924/12044 , H01L2924/181 , H05K1/09 , H05K2201/10287 , H05K2203/049 , Y10T428/12875 , Y10T428/12889 , H01L2924/00 , H01L2924/20109 , H01L2924/2011 , H01L2924/01029 , H01L2924/01047 , H01L2924/01046 , H01L2924/2075 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/01014 , H01L2924/013 , H01L2924/20303 , H01L2924/20304 , H01L2924/20305 , H01L2924/00012 , H01L2924/01006 , H01L2924/01001 , H01L2924/01008 , H01L2924/01007 , H01L2924/01204 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00013 , H01L2924/01049 , H01L2924/01005 , H01L2924/01015 , H01L2924/01033 , H01L2924/206
摘要： A bonding wire according to the invention contains a core having a surface and a coating layer which is at least partially superimposed over the surface of the core. The core contains a core main component selected from copper and silver and the coating layer contains a coating component selected from palladium, platinum, gold, rhodium, ruthenium, osmium and iridium. The coating layer is applied on the surface of the core by depositing a film of a liquid containing a coating component precursor onto a wire core precursor and heating the deposited film to decompose the coating component precursor into a metallic phase.
摘要翻译： 根据本发明的接合线包含具有表面的芯和至少部分地叠置在芯的表面上的涂层。 芯包含选自铜和银的核心主要成分，涂层含有选自钯，铂，金，铑，钌，锇和铱的涂层成分。 通过将含有涂层组分前体的液体的膜沉积到芯芯前体上并加热沉积膜以将涂层组分前体分解成金属相，将涂层施加在芯的表面上。
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9.发明申请公开(公告)号：US20160111389A1
公开(公告)日：2016-04-21
申请号：US14893833
申请日：2015-03-31
发明人： Takashi YAMADA , Daizo ODA , Ryo OISHI , Teruo HAIBARA , Tomohiro UNO
CPC分类号： H01L24/45 , B21C1/00 , B21C1/003 , B23K35/0227 , B23K35/3006 , C22C5/06 , C22C5/08 , C22F1/00 , C22F1/14 , H01L24/43 , H01L2224/4321 , H01L2224/43848 , H01L2224/45012 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45664 , H01L2924/00011 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/013 , H01L2924/10253 , H01L2924/201 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01049 , H01L2924/01045 , H01L2924/00014 , H01L2924/01005 , H01L2924/01016 , H01L2924/01017 , H01L2924/00015 , H01L2924/01201
摘要： Bonding wire for semiconductor device use where both leaning failures and spring failures are suppressed by (1) in a cross-section containing the wire center and parallel to the wire longitudinal direction (wire center cross-section), there are no crystal grains with a ratio a/b of a long axis “a” and a short axis “b” of 10 or more and with an area of 15 μm2 or more (“fiber texture”), (2) when measuring a crystal direction in the wire longitudinal direction in the wire center cross-section, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%, and (3) when measuring a crystal direction in the wire longitudinal direction at the wire surface, the ratio of crystal direction with an angle difference with respect to the wire longitudinal direction of 15° or less is, by area ratio, 50% to 90%. During the drawing step, a drawing operation with a rate of reduction of area of 15.5% or more is performed at least once. The final heat treatment temperature and the pre-final heat treatment temperature are made predetermined ranges.
摘要翻译： 用于半导体器件的接合线，其中通过（1）在包含线中心并且平行于线纵向（线中心横截面）的横截面中抑制倾斜故障和弹簧故障，不存在具有 长轴“a”的比率a / b和短轴“b”为10以上，面积为15μm2以上（“纤维织构”），（2）当测定线材纵向的晶体方向 在线中心横截面的方向上，相对于线纵向的角度差为15°以下的晶体方向<100>的面积比为50％〜90％，（3）当 在线表面测定线长方向的晶体方向，晶体方向<100>与线长度方向的角度差为15°以下的面积比为50％〜90％。 在拉伸步骤中，至少进行一次具有15.5％以上的面积减小率的拉拔操作。 将最终的热处理温度和预热处理温度设定为预定范围。
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10.发明授权公开(公告)号：US09312235B1
公开(公告)日：2016-04-12
申请号：US14573150
申请日：2014-12-17
发明人： Ching-Shing Kang , Sung-Wei Yeh , Chin-Hsiang Shih
CPC分类号： H01L24/45 , C22C21/00 , C22F1/04 , H01L24/43 , H01L2224/4321 , H01L2224/43848 , H01L2224/43985 , H01L2224/45015 , H01L2224/45124 , H01L2924/01021 , H01L2924/0104 , H01L2924/01014 , H01L2924/13 , H01L2924/00013 , H01L2924/01205
摘要： An aluminum-based alloy conductive wire used in semiconductor package is composed of 0.05 to 0.14 weight percent scandium (Sc), 0.01 to 0.1 weight percent zirconium (Zr), 0.01 to 0.1 weight percent silicon (Si) and the balance aluminum (Al), wherein the aluminum-based alloy conductive wire is made from high purity aluminum, aluminum-scandium alloy, aluminum-zirconium alloy and aluminum-silicon alloy by a melting treatment, a casting treatment, a solution treatment, a plastic processing and an aging treatment.
摘要翻译： 半导体封装中使用的铝基合金导线由0.05〜0.14重量％的钪（Sc），0.01〜0.1重量％的锆（Zr），0.01〜0.1重量％的硅（Si）和余量的铝（Al）构成， 其中所述铝基合金导线通过熔融处理，铸造处理，溶液处理，塑性加工和时效处理由高纯度铝，铝 - 钪合金，铝 - 锆合金和铝 - 硅合金制成 。
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