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公开(公告)号：US07259406B2
公开(公告)日：2007-08-21
申请号：US11263997
申请日：2005-11-02
申请人： Yoshihiko Hanamaki , Kenichi Ono , Kimio Shigihara , Kazushige Kawasaki , Kimitaka Shibata , Naoyuki Shimada
发明人： Yoshihiko Hanamaki , Kenichi Ono , Kimio Shigihara , Kazushige Kawasaki , Kimitaka Shibata , Naoyuki Shimada
IPC分类号： H01L29/24 , H01L33/00 , H01L29/06 , H01L29/12 , H01L31/0328
摘要： A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InGaAsP (including zero As content)guide layer without added dopant impurities, a p-type AlGaInP cladding layer, a p-type band discontinuity reduction layer, and a p-type GaAs contact layer sequentially laminated on an n-type GaAs substrate C or Mg is the dopant impurity in the p-type GaAs contact layer, the p-type band discontinuity reduction layer, and the p-type AlGaInP cladding layer.
摘要翻译： 具有包括n型GaAs缓冲层，n型AlGaInP包层，没有添加掺杂杂质的第一InGaAsP（包括零As含量）引导层的半导体光学元件，InGaAsP（包括0 In含量）有源层， 没有添加掺杂剂杂质的第二InGaAsP（包括零As含量）引导层，顺序地层叠在n型GaAs衬底上的p型AlGaInP包层，p型带不连续性还原层和p型GaAs接触层 C或Mg是p型GaAs接触层中的掺杂剂杂质，p型带不连续性还原层和p型AlGaInP包层。
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公开(公告)号：US20060220037A1
公开(公告)日：2006-10-05
申请号：US11263997
申请日：2005-11-02
申请人： Yoshihiko Hanamaki , Kenichi Ono , Kimio Shigihara , Kazushige Kawasaki , Kimitaka Shibata , Naoyuki Shimada
发明人： Yoshihiko Hanamaki , Kenichi Ono , Kimio Shigihara , Kazushige Kawasaki , Kimitaka Shibata , Naoyuki Shimada
IPC分类号： H01L31/12
摘要： A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content) guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InGaAsP (including zero As content) guide layer without added dopant impurities, a p-type AlGaInP cladding layer, a p-type band discontinuity reduction layer, and a p-type GaAs contact layer sequentially laminated on an n-type GaAs substrate C or Mg is the dopant impurity in the p-type-GaAs contact layer, the p-type band discontinuity reduction layer, and the p-type AlGaInP cladding layer.
摘要翻译： 具有包括n型GaAs缓冲层，n型AlGaInP包层，没有添加掺杂杂质的第一InGaAsP（包括零As含量）引导层的半导体光学元件，InGaAsP（包括0 In含量）有源层， 没有添加掺杂剂杂质的第二InGaAsP（包括零As含量）引导层，顺序地层叠在n型GaAs衬底上的p型AlGaInP包层，p型带不连续性还原层和p型GaAs接触层 C或Mg是p型GaAs接触层中的掺杂剂杂质，p型带不连续性还原层和p型AlGaInP包层。
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公开(公告)号：US07197839B2
公开(公告)日：2007-04-03
申请号：US11202041
申请日：2005-08-12
IPC分类号： F26B3/34
CPC分类号： B28B11/243 , B28B11/241 , C04B2235/606 , F26B3/347 , F26B2210/02
摘要： A method for drying a honeycomb formed body using microwaves is provided. The method can reduce the difference in the drying speed inside the honeycomb formed bodies during the drying process and can dry the honeycomb formed bodies without cell deformation. The method comprises placing the honeycomb formed body in a drying furnace with the cell axis in the vertical direction and irradiating the honeycomb with microwaves at a frequency of 300–30,000 MHz. The difference of the water content in the vertical direction of the honeycomb formed body 1 is maintained at 0.3% per mm or less during microwave irradiation.
摘要翻译： 提供了使用微波对蜂窝成形体进行干燥的方法。 该方法可以减少干燥过程中蜂窝成形体内的干燥速度差异，并且能够使蜂窝成形体干燥而不会发生细胞变形。 该方法包括将蜂窝成形体放置在干燥炉中，使细胞轴线在垂直方向上，并以300-30,000MHz的频率向蜂窝体照射微波。 在微波照射期间，蜂窝成形体1的垂直方向的含水量的差别保持在0.3mm / mm以下。
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公开(公告)号：US20060104565A1
公开(公告)日：2006-05-18
申请号：US11073569
申请日：2005-03-08
申请人： Naoyuki Shimada , Tetsuya Yagi
发明人： Naoyuki Shimada , Tetsuya Yagi
IPC分类号： G02B6/12
CPC分类号： H01S5/4025 , H01L2224/48091 , H01L2224/48465 , H01L2224/49111 , H01S5/02276 , H01S5/024 , H01S5/4031 , H01L2924/00014 , H01L2924/00
摘要： An optical semiconductor module includes at least one semiconductor chip including at least one laser diode, a sub-mount or a heat sink, on which the at least one semiconductor chip is mounted, and a bonding wire supplying an operating current to the semiconductor chip. The material, diameter, and shape of the bonding wire are selected so that the bonding wire fuses itself when an overcurrent exceeding the operating current of the laser diode is applied.
摘要翻译： 光学半导体模块包括至少一个包括至少一个激光二极管，子安装座或散热器的半导体芯片，其上安装有至少一个半导体芯片，以及将工作电流提供给半导体芯片的接合线。 选择接合线的材料，直径和形状，使得当施加超过激光二极管的工作电流的过电流时，接合线自身熔断。
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公开(公告)号：US20060042116A1
公开(公告)日：2006-03-02
申请号：US11202041
申请日：2005-08-12
CPC分类号： B28B11/243 , B28B11/241 , C04B2235/606 , F26B3/347 , F26B2210/02
摘要： A method for drying a honeycomb formed body using microwaves is provided. The method can reduce the difference in the drying speed inside the honeycomb formed bodies during the drying process and can dry the honeycomb formed bodies without cell deformation. The method comprises placing the honeycomb formed body in a drying furnace with the cell axis in the vertical direction and irradiating the honeycomb with microwaves at a frequency of 300-30,000 MHz. The difference of the water content in the vertical direction of the honeycomb formed body 1 is maintained at 0.3% per mm or less during microwave irradiation.
摘要翻译： 提供了使用微波对蜂窝成形体进行干燥的方法。 该方法可以减少干燥过程中蜂窝成形体内的干燥速度差异，并且能够使蜂窝成形体干燥而不会发生细胞变形。 该方法包括将蜂窝成形体放置在干燥炉中，使细胞轴线在垂直方向上，并以300-30,000MHz的频率向蜂窝体照射微波。 在微波照射期间，蜂窝成形体1的垂直方向的含水量的差别保持在0.3mm / mm以下。
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公开(公告)号：US20110164640A1
公开(公告)日：2011-07-07
申请号：US12595518
申请日：2007-05-18
申请人： Naoyuki Shimada , Kenichi Ono , Yoshihiko Hanamaki
发明人： Naoyuki Shimada , Kenichi Ono , Yoshihiko Hanamaki
CPC分类号： H01S5/4031 , H01S5/0014 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/02476 , H01S5/3201 , H01S2304/02
摘要： An optical semiconductor device comprises: a semiconductor light emitting element including semiconductor layers, including an active layer having a quantum well structure and epitaxially grown on a semiconductor substrate; and a submount on which the semiconductor light emitting element is mounted. Strain in the active layer after mounting the semiconductor light emitting element on the submount is larger than strain in the active layer after epitaxial growth of the active layer. The strain in the active layer during the epitaxial growth results in the surface of the semiconductor layers being a mirror surface. The strain in the active layer after the semiconductor light emitting element is mounted on the submount would not result in a mirror surface if present in the active layer at the epitaxial growth.
摘要翻译： 光学半导体器件包括：包含半导体层的半导体发光元件，包括具有量子阱结构并在半导体衬底上外延生长的有源层; 以及安装有半导体发光元件的基座。 将半导体发光元件安装在底座上后，有源层中的应变大于有源层外延生长后的有源层中的应变。 在外延生长期间在有源层中的应变导致半导体层的表面是镜面。 在半导体发光元件安装在基座上的有源层中的应变在外延生长时如果存在于有源层中则不会产生镜面。
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公开(公告)号：US20050286592A1
公开(公告)日：2005-12-29
申请号：US11078498
申请日：2005-03-14
申请人： Naoyuki Shimada , Kimio Shigihara , Kazushige Kawasaki , Kimitaka Shibata , Tetsuya Yagi , Kenichi Ono , Hideki Haneda
发明人： Naoyuki Shimada , Kimio Shigihara , Kazushige Kawasaki , Kimitaka Shibata , Tetsuya Yagi , Kenichi Ono , Hideki Haneda
CPC分类号： H01S5/024 , H01S5/4031
摘要： A semiconductor laser array device for outputting a higher power includes: a plurality of semiconductor laser chips, arranged in a predetermined pitch; a submount for mounting each semiconductor laser chip; and a heat sink for dissipating heat from the semiconductor laser chip through the submount; wherein a distance S between the centers of the chips and a thickness T of the submount satisfy the following inequality: 2×T≦S≦10×T, whereby improving efficiency of heat dissipation with a good process yield.
摘要翻译： 用于输出更高功率的半导体激光器阵列器件包括：以预定间距排列的多个半导体激光器芯片; 用于安装每个半导体激光器芯片的基座; 以及用于通过所述底座从所述半导体激光器芯片散热的散热器; 其中芯片的中心和底座的厚度T之间的距离S满足以下不等式：2xT <= S <= 10×T，从而以良好的加工效率提高散热效率。
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