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公开(公告)号：US07259406B2
公开(公告)日：2007-08-21
申请号：US11263997
申请日：2005-11-02
申请人： Yoshihiko Hanamaki , Kenichi Ono , Kimio Shigihara , Kazushige Kawasaki , Kimitaka Shibata , Naoyuki Shimada
发明人： Yoshihiko Hanamaki , Kenichi Ono , Kimio Shigihara , Kazushige Kawasaki , Kimitaka Shibata , Naoyuki Shimada
IPC分类号： H01L29/24 , H01L33/00 , H01L29/06 , H01L29/12 , H01L31/0328
摘要： A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InGaAsP (including zero As content)guide layer without added dopant impurities, a p-type AlGaInP cladding layer, a p-type band discontinuity reduction layer, and a p-type GaAs contact layer sequentially laminated on an n-type GaAs substrate C or Mg is the dopant impurity in the p-type GaAs contact layer, the p-type band discontinuity reduction layer, and the p-type AlGaInP cladding layer.
摘要翻译： 具有包括n型GaAs缓冲层，n型AlGaInP包层，没有添加掺杂杂质的第一InGaAsP（包括零As含量）引导层的半导体光学元件，InGaAsP（包括0 In含量）有源层， 没有添加掺杂剂杂质的第二InGaAsP（包括零As含量）引导层，顺序地层叠在n型GaAs衬底上的p型AlGaInP包层，p型带不连续性还原层和p型GaAs接触层 C或Mg是p型GaAs接触层中的掺杂剂杂质，p型带不连续性还原层和p型AlGaInP包层。
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公开(公告)号：US20060220037A1
公开(公告)日：2006-10-05
申请号：US11263997
申请日：2005-11-02
申请人： Yoshihiko Hanamaki , Kenichi Ono , Kimio Shigihara , Kazushige Kawasaki , Kimitaka Shibata , Naoyuki Shimada
发明人： Yoshihiko Hanamaki , Kenichi Ono , Kimio Shigihara , Kazushige Kawasaki , Kimitaka Shibata , Naoyuki Shimada
IPC分类号： H01L31/12
摘要： A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content) guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InGaAsP (including zero As content) guide layer without added dopant impurities, a p-type AlGaInP cladding layer, a p-type band discontinuity reduction layer, and a p-type GaAs contact layer sequentially laminated on an n-type GaAs substrate C or Mg is the dopant impurity in the p-type-GaAs contact layer, the p-type band discontinuity reduction layer, and the p-type AlGaInP cladding layer.
摘要翻译： 具有包括n型GaAs缓冲层，n型AlGaInP包层，没有添加掺杂杂质的第一InGaAsP（包括零As含量）引导层的半导体光学元件，InGaAsP（包括0 In含量）有源层， 没有添加掺杂剂杂质的第二InGaAsP（包括零As含量）引导层，顺序地层叠在n型GaAs衬底上的p型AlGaInP包层，p型带不连续性还原层和p型GaAs接触层 C或Mg是p型GaAs接触层中的掺杂剂杂质，p型带不连续性还原层和p型AlGaInP包层。
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公开(公告)号：US20050286592A1
公开(公告)日：2005-12-29
申请号：US11078498
申请日：2005-03-14
申请人： Naoyuki Shimada , Kimio Shigihara , Kazushige Kawasaki , Kimitaka Shibata , Tetsuya Yagi , Kenichi Ono , Hideki Haneda
发明人： Naoyuki Shimada , Kimio Shigihara , Kazushige Kawasaki , Kimitaka Shibata , Tetsuya Yagi , Kenichi Ono , Hideki Haneda
CPC分类号： H01S5/024 , H01S5/4031
摘要： A semiconductor laser array device for outputting a higher power includes: a plurality of semiconductor laser chips, arranged in a predetermined pitch; a submount for mounting each semiconductor laser chip; and a heat sink for dissipating heat from the semiconductor laser chip through the submount; wherein a distance S between the centers of the chips and a thickness T of the submount satisfy the following inequality: 2×T≦S≦10×T, whereby improving efficiency of heat dissipation with a good process yield.
摘要翻译： 用于输出更高功率的半导体激光器阵列器件包括：以预定间距排列的多个半导体激光器芯片; 用于安装每个半导体激光器芯片的基座; 以及用于通过所述底座从所述半导体激光器芯片散热的散热器; 其中芯片的中心和底座的厚度T之间的距离S满足以下不等式：2xT <= S <= 10×T，从而以良好的加工效率提高散热效率。
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公开(公告)号：US07289546B1
公开(公告)日：2007-10-30
申请号：US11550841
申请日：2006-10-19
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/2004 , H01S5/2036 , H01S5/2059 , H01S5/3211 , H01S5/34313 , H01S5/34373
摘要： An n-type first cladding layer, a first guide layer, a first enhancing layer, an active layer, a second enhancing layer, a second guide layer, and a p-type second cladding layer are sequentially stacked on an n-type GaAs substrate. The thickness of each of the first guide layer and the second guide layer is 100 nm or more. In such a semiconductor laser, the difference between the Eg (band gap energy) of the first guide layer and the Eg of the active layer (or the difference between the Eg of the second guide layer and the Eg of the active layer) is made 0.66 times or less of the difference between the Eg of the first cladding layer and the Eg of the active layer (or the difference between the Eg of the second cladding layer and the Eg of the active layer).
摘要翻译： 在n型GaAs衬底上顺序层叠n型第一包层，第一引导层，第一增强层，有源层，第二增强层，第二引导层和p型第二包覆层 。 第一引导层和第二引导层的厚度为100nm以上。 在这种半导体激光器中，使第一引导层的Eg（带隙能量）与有源层的Eg（或第二导向层的Eg与有源层的Eg之间的差）之间的差异 第一包层的Eg与有源层的Eg（或第二包层的Eg与活性层的Eg之间的差）的差为0.66倍以下。
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公开(公告)号：US20070171948A1
公开(公告)日：2007-07-26
申请号：US11550841
申请日：2006-10-19
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/2004 , H01S5/2036 , H01S5/2059 , H01S5/3211 , H01S5/34313 , H01S5/34373
摘要： An n-type first cladding layer, a first guide layer, a first enhancing layer, an active layer, a second enhancing layer, a second guide layer, and a p-type second cladding layer are sequentially stacked on an n-type GaAs substrate. The thickness of each of the first guide layer and the second guide layer is 100 nm or more. In such a semiconductor laser, the difference between the Eg (and gap energy) of the first guide layer and the Eg of the active layer (or the difference between the Eg of the second guide layer and the Eg of the active layer) is made 0.66 times or less of the difference between the Eg of the first cladding layer and the Eg of the active layer (or the difference between the Eg of the second cladding layer and the Eg of the active layer).
摘要翻译： 在n型GaAs衬底上顺序层叠n型第一包层，第一引导层，第一增强层，有源层，第二增强层，第二引导层和p型第二包覆层 。 第一引导层和第二引导层的厚度为100nm以上。 在这种半导体激光器中，使第一引导层的Eg（和间隙能量）与有源层的Eg（或第二引导层的Eg与有源层的Eg之间的差）之间的差异 第一包层的Eg与有源层的Eg（或第二包层的Eg与活性层的Eg之间的差）的差为0.66倍以下。
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公开(公告)号：US07656920B2
公开(公告)日：2010-02-02
申请号：US11284907
申请日：2005-11-23
申请人： Kimio Shigihara , Kazushige Kawasaki , Kenichi Ono
发明人： Kimio Shigihara , Kazushige Kawasaki , Kenichi Ono
IPC分类号： H01S5/00
CPC分类号： H01S5/3434 , B82Y20/00 , H01S5/2004 , H01S5/2063 , H01S5/22 , H01S5/3404 , H01S5/3436 , H01S2301/14
摘要： A semiconductor laser device producing light having a TE-polarized component suitable for practical use (i.e., light having TE-polarized light intensity sufficiently high for practical use). A semiconductor laser device includes a GaAsP active layer, InGaP guide layers, and AlGaInP cladding layers. The GaAsP active layer emits light. The GaAsP active layer is interposed between the InGaP guide layers. The InGaP guide layers and GaAsP active layer are interposed between the AlGaInP cladding layers. Polarization ratio, which is a ratio of light intensity of TM-polarized light to light intensity of TE-polarized light, of the light produced by the semiconductor laser device is less than 2.3.
摘要翻译： 一种半导体激光装置，其具有适用于实际使用的TE极化分量（即实际使用的TE偏振光强度足够高的光）的光。 半导体激光器件包括GaAsP有源层，InGaP导向层和AlGaInP包覆层。 GaAsP有源层发光。 GaAsP有源层介于InGaP引导层之间。 InGaP引导层和GaAsP有源层插入在AlGaInP包覆层之间。 由半导体激光器件产生的光的偏振光比是TM偏振光的光强度与TE偏振光的光强度之比小于2.3。
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公开(公告)号：US20060215717A1
公开(公告)日：2006-09-28
申请号：US11284907
申请日：2005-11-23
申请人： Kimio Shigihara , Kazushige Kawasaki , Kenichi Ono
发明人： Kimio Shigihara , Kazushige Kawasaki , Kenichi Ono
CPC分类号： H01S5/3434 , B82Y20/00 , H01S5/2004 , H01S5/2063 , H01S5/22 , H01S5/3404 , H01S5/3436 , H01S2301/14
摘要： A semiconductor laser device producing light having a TE-polarized component suitable for practical use. A semiconductor laser device includes a GaAsP active layer, InGaP guide layers, and, AlGaInP cladding layers. The GaAsP active layer emits light. The GaAsP active layer is interposed between the InGaP guide layers. The InGaP guide layers and the GaAsP active layer are interposed between the AlGaInP cladding layers. Polarization ratio, which is a ratio of light intensity of TM-polarized light to light intensity of TE-polarized light, is less than 2.3.
摘要翻译： 一种半导体激光装置，其制造具有适用于实际应用的TE偏光成分的光。 半导体激光器件包括GaAsP有源层，InGaP导向层和AlGaInP包覆层。 GaAsP有源层发光。 GaAsP有源层介于InGaP引导层之间。 InGaP引导层和GaAsP有源层插入在AlGaInP包覆层之间。 TM偏振光的光强度与TE偏振光的光强度的比率的偏振比小于2.3。
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公开(公告)号：US20070009001A1
公开(公告)日：2007-01-11
申请号：US11396771
申请日：2006-04-04
IPC分类号： H01S5/00
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/2004 , H01S5/2063 , H01S5/22 , H01S5/2231 , H01S5/3434 , H01S5/3436 , H01S5/4031 , H01S2302/00
摘要： A semiconductor laser device includes: on an n-GaAs substrate, an n-type cladding layer of n-(Al0.3Ga0.7)0.5In1.5P, an n-side guide layer of i-In0.49Ga0.51P lattice-matched to GaAs, an active layer having a larger refractive index than the n-side guide layer, and including an In0.07Ga0.93As quantum well layer, a p-side guide layer of i-In0.49Ga0.51P, and a p-type cladding layer of p-(Al0.3Ga0.7)0.5In0.5P. Therefore, the anti-COD level increased, and internal loss minimized.
摘要翻译： 一种半导体激光器件包括：在n-GaAs衬底上的n-（Al 0.3 N 0.7 Ga 0.5 N）的n型覆层， 在1.5“P中，与GaAs晶格匹配的i-In 0.49 Ga 0.51 P p的n侧引导层，具有 具有比n侧引导层更大的折射率，并且包括In量子阱层，i-In <！ - SIPO
- >子层的p侧引导层， 0.49 0.51 P，以及p型（Al 0.3 Ga 0.7 N）0.5的p型包覆层 0.5 P。 因此，抗COD水平提高，内部损失最小化。 -
公开(公告)号：US06970633B2
公开(公告)日：2005-11-29
申请号：US10668185
申请日：2003-09-24
IPC分类号： H01S3/08 , G02B5/08 , G02B6/42 , H01S5/028 , H01S5/183 , G02B6/10 , H01L29/04 , H01L29/205 , H01S5/00 , B22B7/02
CPC分类号： H01S5/0287 , G02B5/0816 , G02B6/4207 , Y10T428/2495
摘要： A semiconductor optical device includes a waveguide layer and a reflecting multi-layer film. The waveguide layer includes two cladding layers and an active layer sandwiched between the two cladding layers. The reflecting multi-layer film including multiple layers is on at least one of a pair of opposing end faces of the waveguide layer. A summation Σnidi of products nidi of refractive indexes ni and thicknesses di of the layers denoted i in the reflecting multi-layer film, and a wavelength λ0 of light guided through the waveguide layer satisfies a relationship, Σnidi>λ0/4. A first wavelength bandwidth Δλ is wider than a second wavelength bandwidth ΔΛ. Δλ is a wavelength range including the wavelength λ0 in which a reflectance R of the reflecting multi-layer film is not higher than +2.0% from reflectance R at the wavelength λ0. ΔΛ is a wavelength range including the wavelength λ0 in which a reflectance R′ of a hypothetical layer is not higher than +2.0% from a hypothetical reflectance R′ at the wavelength λ0 of a hypothetical layer having a thickness of 5λ0/(4nf), a refractive index nf, on the at least one of opposing end faces, and satisfying a relationship, R′=((nc−nf2)/(nc+nf2))2, where nc denotes an effective refractive index of the waveguide layer.
摘要翻译： 半导体光学器件包括波导层和反射多层膜。 波导层包括两个包覆层和夹在两个覆层之间的有源层。 包括多层的反射多层膜在波导层的一对相对的端面中的至少一个上。 折射率n i i i i i i i的乘积的总和i i / 并且在反射多层膜中表示为i的层的厚度d 1和厚度d 1，并且通过波导层引导的光的波长λ0 <0>满足关系，Sigman 4/1/2。 第一波长带宽Deltalambda比第二波长带宽DeltaLambda宽。 Deltalλ是包括波长λ<0>的波长范围，其中反射多层膜的反射率R不比波长λ<0的反射率R + + 2.0％ >。 DeltaLambda是包括波长λ<0> 0的波长范围，其中假设层的反射率R'与波长λ0的假想反射率R'不高于+ 2.0％ 具有厚度为5μm/（4n×f））的假想层的折射率n 在该至少一个 的相对端面，并且满足关系，R'=（（n> c n） 其中，n C表示有效折射率，其中n≥2 波导层。
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公开(公告)号：US06946684B2
公开(公告)日：2005-09-20
申请号：US10372247
申请日：2003-02-25
CPC分类号： H01S5/028 , H01L33/44 , H01S5/0287
摘要： An optical semiconductor device includes a semiconductor laser having an equivalent refractive index nc; and a low-reflective coating film disposed on one end face of the semiconductor laser. The low-reflective coating film includes a first-layer coating film having a refractive index n1 and a thickness d1; and a second-layer coating film having a refractive index n2 and a thickness d2. n0 and λ0 denote refractive index of free space on a surface of the second-layer coating film and the wavelength of laser light produced by the semiconductor laser. Both a real part and an imaginary part of amplitude reflectance, determined by the wavelength λ0, the refractive indexes n1 and n2, and the thicknesses d1 and d2, are zero and only one of refractive indexes n1 and n2 is smaller than the square root of a product of the refractive indexes nc and n0.
摘要翻译： 光学半导体器件包括具有等效折射率nc的半导体激光器; 以及设置在半导体激光器的一个端面上的低反射涂膜。 低反射涂膜包括折射率n 1和厚度d 1的第一层涂膜; 以及折射率n 2和厚度d 2的第二层涂膜。 n 0和λ0表示第二层涂膜的表面上的自由空间的折射率和由半导体激光器产生的激光的波长。 由波长λ0，折射率n 1和n 2以及厚度d 1和d 2确定的振幅反射率的实部和虚部都为零，并且只有折射率n 1和n 2之一 小于折射率nc和n 0的乘积的平方根。
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