公开(公告)号：US20050286592A1

公开(公告)日：2005-12-29

申请号：US11078498

申请日：2005-03-14

申请人： Naoyuki Shimada ,  Kimio Shigihara ,  Kazushige Kawasaki ,  Kimitaka Shibata ,  Tetsuya Yagi ,  Kenichi Ono ,  Hideki Haneda

发明人： Naoyuki Shimada ,  Kimio Shigihara ,  Kazushige Kawasaki ,  Kimitaka Shibata ,  Tetsuya Yagi ,  Kenichi Ono ,  Hideki Haneda

IPC分类号： H01S3/04 ,  H01S5/00 ,  H01S5/024 ,  H01S5/40

CPC分类号： H01S5/024 ,  H01S5/4031

摘要： A semiconductor laser array device for outputting a higher power includes: a plurality of semiconductor laser chips, arranged in a predetermined pitch; a submount for mounting each semiconductor laser chip; and a heat sink for dissipating heat from the semiconductor laser chip through the submount; wherein a distance S between the centers of the chips and a thickness T of the submount satisfy the following inequality: 2×T≦S≦10×T, whereby improving efficiency of heat dissipation with a good process yield.

摘要翻译： 用于输出更高功率的半导体激光器阵列器件包括：以预定间距排列的多个半导体激光器芯片; 用于安装每个半导体激光器芯片的基座; 以及用于通过所述底座从所述半导体激光器芯片散热的散热器; 其中芯片的中心和底座的厚度T之间的距离S满足以下不等式：2xT <= S <= 10×T，从而以良好的加工效率提高散热效率。

公开(公告)号：US20060104565A1

公开(公告)日：2006-05-18

申请号：US11073569

申请日：2005-03-08

申请人： Naoyuki Shimada ,  Tetsuya Yagi

发明人： Naoyuki Shimada ,  Tetsuya Yagi

IPC分类号： G02B6/12

CPC分类号： H01S5/4025 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49111 ,  H01S5/02276 ,  H01S5/024 ,  H01S5/4031 ,  H01L2924/00014 ,  H01L2924/00

摘要： An optical semiconductor module includes at least one semiconductor chip including at least one laser diode, a sub-mount or a heat sink, on which the at least one semiconductor chip is mounted, and a bonding wire supplying an operating current to the semiconductor chip. The material, diameter, and shape of the bonding wire are selected so that the bonding wire fuses itself when an overcurrent exceeding the operating current of the laser diode is applied.

摘要翻译： 光学半导体模块包括至少一个包括至少一个激光二极管，子安装座或散热器的半导体芯片，其上安装有至少一个半导体芯片，以及将工作电流提供给半导体芯片的接合线。 选择接合线的材料，直径和形状，使得当施加超过激光二极管的工作电流的过电流时，接合线自身熔断。

公开(公告)号：US20080054277A1

公开(公告)日：2008-03-06

申请号：US11923751

申请日：2007-10-25

申请人： Masayoshi Takemi ,  Kenichi Ono ,  Yoshihiko Hanamaki ,  Chikara Watatani ,  Tetsuya Yagi ,  Harumi Nishiguchi ,  Motoko Sasaki ,  Shinji Abe ,  Yasuaki Yoshida

发明人： Masayoshi Takemi ,  Kenichi Ono ,  Yoshihiko Hanamaki ,  Chikara Watatani ,  Tetsuya Yagi ,  Harumi Nishiguchi ,  Motoko Sasaki ,  Shinji Abe ,  Yasuaki Yoshida

IPC分类号： H01L27/15

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/2226 ,  H01S5/2231 ,  H01S5/34326 ,  H01S5/3436

摘要： The semiconductor laser device includes an active layer, a p-type cladding layer, and a p-type cap layer. The layers are sequentially stacked so that the semiconductor laser device is provided. The p-type cap layer includes both a p-type dopant and an n-type dopant. In another aspect, the p-type cap layer includes a first layer including a first p-type dopant and a second layer including a second p-type dopant having a diffusion coefficient smaller than that of the first p-type dopant. The first layer is far from the active layer, and the second layer is close to the active layer. In further aspect, the p-type cap layer includes carbon (C) as a p-type dopant. According to these configuration, the p-type dopant can be prevented from being diffused in the active layer and the p-type cladding layer.

摘要翻译： 半导体激光器件包括有源层，p型覆层和p型覆盖层。 依次叠层这些层以提供半导体激光器件。 p型覆盖层包括p型掺杂剂和n型掺杂剂。 在另一方面，p型覆盖层包括包含第一p型掺杂剂的第一层和包含扩散系数小于第一p型掺杂剂的扩散系数的第二p型掺杂剂的第二层。 第一层远离有源层，第二层靠近有源层。 在另一方面，p型覆盖层包括作为p型掺杂剂的碳（C）。 根据这些结构，可以防止p型掺杂剂扩散到有源层和p型覆层中。

公开(公告)号：US07627010B2

公开(公告)日：2009-12-01

申请号：US11854653

申请日：2007-09-13

申请人： Tetsuya Yagi

发明人： Tetsuya Yagi

IPC分类号： H01S5/00

CPC分类号： H01S5/028 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0284 ,  H01S5/06804 ,  H01S5/34306

摘要： A semiconductor laser has a reflectance of the front facet coating film or the rear facet coating film dramatically that decreases at wavelengths greater than a predetermined wavelength. This characteristic causes the loss of the semiconductor laser to dramatically increase at wavelengths greater than the predetermined wavelength. As a result, the oscillation wavelength of the semiconductor laser at high temperatures is clamped to around the predetermined wavelength.

摘要翻译： 半导体激光器具有显着的前面小面涂膜或后面涂膜的反射率，其在大于预定波长的波长处降低。 该特性使得半导体激光器的损耗在大于预定波长的波长处显着增加。 结果，半导体激光器在高温下的振荡波长被夹持在预定波长附近。

公开(公告)号：US20080304587A1

公开(公告)日：2008-12-11

申请号：US11793527

申请日：2005-12-21

申请人： Koji Setoh ,  Ippei Kanno ,  Akira Kisoda ,  Daisuke Hayashi ,  Ryosuke Mori ,  Tetsuya Yagi ,  Noritaka Iguchi

发明人： Koji Setoh ,  Ippei Kanno ,  Akira Kisoda ,  Daisuke Hayashi ,  Ryosuke Mori ,  Tetsuya Yagi ,  Noritaka Iguchi

IPC分类号： H04L27/28 ,  H04L27/06 ,  H04L25/08 ,  H03D1/06

CPC分类号： H04L27/2662 ,  H04L27/2678

摘要： An OFDM reception device detects a time at which impulse noise occurs in a received OFDM signal, and specifies a start position candidate period that does not have intersymbol interference and is estimated to have a guard interval signal in a symbol. When setting a FFT window of an effective symbol length in a symbol duration of each symbol, if the impulse noise occurrence time is included in the symbol, the OFDM reception device determines a start position of the FFT window within a range of the start position candidate period so as to exclude the impulse noise occurrence time as much as possible.

摘要翻译： OFDM接收装置检测接收的OFDM信号中出现脉冲噪声的时间，并指定不具有码间干扰的开始位置候补周期，并且估计出具有符号中的保护间隔信号。 当在每个符号的符号持续时间中设置有效符号长度的FFT窗口时，如果脉冲噪声发生时间包括在符号中，则OFDM接收装置在开始位置候选的范围内确定FFT窗口的开始位置 以便尽可能地排除脉冲噪声发生时间。

公开(公告)号：US07173273B2

公开(公告)日：2007-02-06

申请号：US10700047

申请日：2003-11-04

申请人： Harumi Nishiguchi ,  Tetsuya Yagi ,  Yasuaki Yoshida

发明人： Harumi Nishiguchi ,  Tetsuya Yagi ,  Yasuaki Yoshida

IPC分类号： H01L29/06 ,  H01L27/15 ,  H01L29/22

CPC分类号： B82Y20/00 ,  H01S5/162 ,  H01S5/209 ,  H01S5/22 ,  H01S5/2216 ,  H01S5/34326 ,  H01S5/3436

摘要： A semiconductor laser device has an n-GaAs substrate. On the n-GaAs substrate, by turns, are an n-AlGaInP cladding layer, an AlGaInP/GaInP MQW active layer, a p-AlGaInP first cladding layer, a single layer p-AlxGa1-xAs etching stopping layer, a p-AlGaInP second cladding layer with a stripe protrusion, and a p-GaAs contact layer. The portion, other than the stripe-form protrusion, of the p-AlGaInP second cladding layer is covered with an insulating film. The refractive index of the p-AlxGa1-xAs-ESL is nearly equal to the refractive index of each of the lower, first upper, and second upper cladding layers.

摘要翻译： 半导体激光器件具有n-GaAs衬底。 在n-GaAs衬底上，依次为n-AlGaInP包覆层，AlGaInP / GaInP MQW有源层，p-AlGaInP第一覆层，单层p-Al x Ga 作为蚀刻停止层，具有条纹突起的p-AlGaInP第二包覆层和p-GaAs接触层。 p-AlGaInP第二包层的除了条状突起之外的部分被绝缘膜覆盖。 p-Al x Ga 1-x As As ESL的折射率几乎等于下，第一上和第二上部包层中的每一个的折射率 层。

公开(公告)号：US06737288B2

公开(公告)日：2004-05-18

申请号：US10059415

申请日：2002-01-31

申请人： Zempei Kawazu ,  Tetsuya Yagi

发明人： Zempei Kawazu ,  Tetsuya Yagi

IPC分类号： H01L2100

CPC分类号： H01L21/30612

摘要： A heterojunction structure has an AlxGa1−xAs layer (0

摘要翻译： 异质结结构具有Al x Ga 1-x As层（0

公开(公告)号：US5363399A

公开(公告)日：1994-11-08

申请号：US978476

申请日：1992-11-18

申请人： Tetsuya Yagi

发明人： Tetsuya Yagi

IPC分类号： H01S5/00 ,  H01S5/12 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/1228 ,  H01S5/223

摘要： A gain coupled distributed feedback semiconductor laser device includes regions with a predetermined period in an active layer or a cladding layer on the active layer in such a manner that a perturbation in the distribution of charge carriers injected into the active layer is produced which results in a perturbation in gain coefficient without increasing internal loss. The structure produces single-longitudinal-mode oscillation.

摘要翻译： 增益耦合分布反馈半导体激光器件包括在有源层上的预定周期的区域或有源层上的覆层，从而产生注入有源层的电荷载流子分布的扰动，这导致了 扰动增益系数不增加内部损失。 该结构产生单纵模振荡。

公开(公告)号：US5288654A

公开(公告)日：1994-02-22

申请号：US14857

申请日：1993-02-08

申请人： Nobuyuki Kasai ,  Shinichi Sakamoto ,  Takuji Sonoda ,  Tetsuya Yagi

发明人： Nobuyuki Kasai ,  Shinichi Sakamoto ,  Takuji Sonoda ,  Tetsuya Yagi

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/338 ,  H01L29/423 ,  H01L29/47 ,  H01L29/812 ,  H01L21/265

CPC分类号： H01L29/66863 ,  H01L21/28587 ,  H01L21/32136 ,  H01L29/42316 ,  H01L29/475 ,  Y10S148/10

摘要： A mushroom-shaped gate electrode has a lower end in a recess in a semiconductor active layer on a semiconductor substrate. The gate electrode has an enlarged head. A metallic side wall is disposed on a portion of the leg of the gate electrode adjacent the head. Thus, the gate length of a semiconductor device, such as a field effect transistor, is reduced while the effective cross-sectional area of the gate electrode is increased whereby the noise characteristics of the semiconductor device are improved.

摘要翻译： 蘑菇形栅电极在半导体衬底上的半导体有源层的凹部中具有下端。 栅电极具有扩大的头部。 金属侧壁设置在邻近头部的栅电极的腿部的一部分上。 因此，诸如场效应晶体管的半导体器件的栅极长度减小，同时栅电极的有效截面面积增加，从而提高了半导体器件的噪声特性。

公开(公告)号：US5181220A

公开(公告)日：1993-01-19

申请号：US691864

申请日：1991-04-26

申请人： Tetsuya Yagi

发明人： Tetsuya Yagi

IPC分类号： H01L33/20 ,  H01L33/46

CPC分类号： H01L33/20 ,  H01L33/46

摘要： A semiconductor light emitting light concentration device is described which has a multiple diffraction ring for collecting and concentrating the light emitted from an LED integrally formed into the electrode at the semiconductor substrate end of the light emitting device.

摘要翻译： 描述了一种半导体发光聚光装置，其具有多个衍射环，用于收集并集中在发光器件的半导体衬底端处一体形成为电极的LED的发射光。