公开(公告)号：US07696081B2

公开(公告)日：2010-04-13

申请号：US12010793

申请日：2008-01-30

申请人： Tatsuo Kasaoka ,  Kiyohiko Sakakibara ,  Noboru Mori ,  Kazunobu Miki

发明人： Tatsuo Kasaoka ,  Kiyohiko Sakakibara ,  Noboru Mori ,  Kazunobu Miki

IPC分类号： H01L21/475

CPC分类号： G03F1/32 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05093 ,  H01L2224/05553 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10S438/926 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： According to one embodiment of the present invention, a method of manufacturing a semiconductor device includes below steps.A step of preparing a phase shift mask and a normal photomask.A step of stacking a first wiring layer on a semiconductor substrate, and further stacking, on the first wiring layer, a second wiring layer. The a second wiring layer includes a second wiring and a third wiring.A step of stacking an interlayer insulating film on the second wiring layer.A step of forming, in the interlayer insulating film, a first opening in which the second wiring is exposed, and a second opening in which the third wiring is exposed by photolithography using the normal photomask.A step of burying a metal in the first opening and the second opening.A step of providing a pad to be overlaid on the first and second openings.

摘要翻译： 根据本发明的一个实施例，制造半导体器件的方法包括以下步骤。 制备相移掩模和普通光掩模的步骤。 在半导体衬底上堆叠第一布线层，并且在第一布线层上进一步层叠第二布线层的步骤。 第二布线层包括第二布线和第三布线。 在第二布线层上堆叠层间绝缘膜的步骤。 在层间绝缘膜中形成第二布线露出的第一开口和通过光刻法使用普通光掩模使第三布线曝光的第二开口的步骤。 在第一开口和第二开口中埋入金属的步骤。 提供覆盖在第一和第二开口上的垫的步骤。

公开(公告)号：US08084279B2

公开(公告)日：2011-12-27

申请号：US12720248

申请日：2010-03-09

申请人： Tatsuo Kasaoka ,  Kiyohiko Sakakibara ,  Noboru Mori ,  Kazunobu Miki

发明人： Tatsuo Kasaoka ,  Kiyohiko Sakakibara ,  Noboru Mori ,  Kazunobu Miki

IPC分类号： H01L21/66

CPC分类号： G03F1/32 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05093 ,  H01L2224/05553 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10S438/926 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： According to one embodiment of the present invention, a method of manufacturing a semiconductor device includes below steps. A step of preparing a phase shift mask and a normal photomask. A step of stacking a first wiring layer on a semiconductor substrate, and further stacking, on the first wiring layer, a second wiring layer. The second wiring layer includes a second wiring and third wiring. A step of stacking an interlayer insulating film on the second wiring layer. A step of forming, in the interlayer insulating film, a first opening in which the second wiring is exposed, and a second opening in which the third wiring is exposed by photolithography using the normal photomask. A step of burying a metal in the first opening and the second opening. A step of providing a pad to be overlaid on the first and second openings.

摘要翻译： 根据本发明的一个实施例，制造半导体器件的方法包括以下步骤。 制备相移掩模和普通光掩模的步骤。 在半导体衬底上堆叠第一布线层，并且在第一布线层上进一步层叠第二布线层的步骤。 第二布线层包括第二布线和第三布线。 在第二布线层上堆叠层间绝缘膜的步骤。 在层间绝缘膜中形成第二布线露出的第一开口和通过光刻法使用普通光掩模使第三布线曝光的第二开口的步骤。 在第一开口和第二开口中埋入金属的步骤。 提供覆盖在第一和第二开口上的垫的步骤。

公开(公告)号：US4451298A

公开(公告)日：1984-05-29

申请号：US328498

申请日：1981-12-08

申请人： Aisaburo Yagishita ,  Noboru Mori ,  Kinshiro Kusumi ,  Yoshio Tsugi

发明人： Aisaburo Yagishita ,  Noboru Mori ,  Kinshiro Kusumi ,  Yoshio Tsugi

IPC分类号： C23G3/00 ,  B08B7/04

CPC分类号： C23G3/00

摘要： A system for recovery and recycling of a washing liquid and heat contained in the washings discharged from a metal surface treatment process comprises a hot water washing tank with an associated cushion tank, a cold water washing tank with an associated cushion tank, a heat exchanger, an ion exchanger and a filter. The second-mentioned cushion tank is in communication with the hot water washing tank through the heat exchanger, while the first-mentioned cushion tank is in communication with the cold water washing tank through the filter, the heat exchanger and the ion exchanger.

摘要翻译： 用于回收和循环洗涤液体的系统和从金属表面处理方法排出的洗涤液中所含的热量包括：具有相关缓冲罐的热水洗涤槽，具有相关缓冲罐的冷水洗涤槽，热交换器， 离子交换器和过滤器。 第二提及的缓冲罐通过热交换器与热水洗涤槽连通，而首先提到的缓冲罐通过过滤器，热交换器和离子交换器与冷水洗涤槽连通。

公开(公告)号：US20100159690A1

公开(公告)日：2010-06-24

申请号：US12720248

申请日：2010-03-09

申请人： Tatsuo Kasaoka ,  Kiyohiko Sakakibara ,  Noboru Mori ,  Kazunobu Miki

发明人： Tatsuo Kasaoka ,  Kiyohiko Sakakibara ,  Noboru Mori ,  Kazunobu Miki

IPC分类号： H01L21/768

CPC分类号： G03F1/32 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05093 ,  H01L2224/05553 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10S438/926 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： According to one embodiment of the present invention, a method of manufacturing a semiconductor device includes below steps.A step of preparing a phase shift mask and a normal photomask.A step of stacking a first wiring layer on a semiconductor substrate, and further stacking, on the first wiring layer, a second wiring layer. The a second wiring layer includes a second wiring and a third wiring.A step of stacking an interlayer insulating film on the second wiring layer.A step of forming, in the interlayer insulating film, a first opening in which the second wiring is exposed, and a second opening in which the third wiring is exposed by photolithography using the normal photomask.A step of burying a metal in the first opening and the second opening.A step of providing a pad to be overlaid on the first and second openings.

摘要翻译： 根据本发明的一个实施例，制造半导体器件的方法包括以下步骤。 制备相移掩模和普通光掩模的步骤。 在半导体衬底上堆叠第一布线层，并且在第一布线层上进一步层叠第二布线层的步骤。 第二布线层包括第二布线和第三布线。 在第二布线层上堆叠层间绝缘膜的步骤。 在层间绝缘膜中形成第二布线露出的第一开口和通过光刻法使用普通光掩模使第三布线曝光的第二开口的步骤。 在第一开口和第二开口中埋入金属的步骤。 提供覆盖在第一和第二开口上的垫的步骤。

公开(公告)号：US20080217786A1

公开(公告)日：2008-09-11

申请号：US12010793

申请日：2008-01-30

申请人： Tatsuo Kasaoka ,  Kiyohiko Sakakibara ,  Noboru Mori ,  Kazunobu Miki

发明人： Tatsuo Kasaoka ,  Kiyohiko Sakakibara ,  Noboru Mori ,  Kazunobu Miki

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： G03F1/32 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05093 ,  H01L2224/05553 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3025 ,  Y10S438/926 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099

摘要： According to one embodiment of the present invention, a method of manufacturing a semiconductor device includes below steps.A step of preparing a phase shift mask and a normal photomask.A step of stacking a first wiring layer on a semiconductor substrate, and further stacking, on the first wiring layer, a second wiring layer. The a second wiring layer includes a second wiring and a third wiring.A step of stacking an interlayer insulating film on the second wiring layer.A step of forming, in the interlayer insulating film, a first opening in which the second wiring is exposed, and a second opening in which the third wiring is exposed by photolithography using the normal photomask.A step of burying a metal in the first opening and the second opening.A step of providing a pad to be overlaid on the first and second openings.

摘要翻译： 根据本发明的一个实施例，制造半导体器件的方法包括以下步骤。 制备相移掩模和普通光掩模的步骤。 在半导体衬底上堆叠第一布线层，并且在第一布线层上进一步层叠第二布线层的步骤。 第二布线层包括第二布线和第三布线。 在第二布线层上堆叠层间绝缘膜的步骤。 在层间绝缘膜中形成第二布线露出的第一开口和通过光刻法使用普通光掩模使第三布线曝光的第二开口的步骤。 在第一开口和第二开口中埋入金属的步骤。 提供覆盖在第一和第二开口上的垫的步骤。

公开(公告)号：US6141847A

公开(公告)日：2000-11-07

申请号：US997164

申请日：1997-12-23

申请人： Masayuki Mizuno ,  Masaaki Hayama ,  Kazuhiro Miura ,  Noboru Mori ,  Akira Hashimoto ,  Mitsuteru Yamada

发明人： Masayuki Mizuno ,  Masaaki Hayama ,  Kazuhiro Miura ,  Noboru Mori ,  Akira Hashimoto ,  Mitsuteru Yamada

IPC分类号： H01G4/40 ,  H01G7/00

CPC分类号： H01G4/40 ,  Y10T29/435 ,  Y10T29/4902

摘要： A ceramic substrate 1 made of magnetic substance on which an inductor 2 is formed is prepared. A ceramic substrate 3 made of dielectric substance on which a capacitor 4 is formed is also prepared. An intermediate layer 5 made of lass paste is printed on the inductor 2 and the capacitor 4. After debinding the substrates 1 and 3 independently, both the substrates are filed with the intermediate layer 5 therebetween so that both the substrates may be glued and integrated. As such, because the debinding process is provided before filing, less gas is generated in firing, and as a result, voids are restrained from occurring.

摘要翻译： 制备由其上形成有电感器2的磁性物质制成的陶瓷基板1。 还制备了由其上形成有电容器4的介电材料制成的陶瓷基板3。 在电感器2和电容器4上印刷由轻质糊料制成的中间层5.在独立地剥离基板1和3之后，两个基板之间留有中间层5，使得两个基板可以胶合并整合。 因此，因为脱脂处理在提交之前提供，所以在烧制中产生较少的气体，结果，抑制了空隙的发生。