公开(公告)号：US07307490B2

公开(公告)日：2007-12-11

申请号：US10957651

申请日：2004-10-05

申请人： Hirotaka Kizuki ,  Noriyuki Tanino ,  Junichi Somei

发明人： Hirotaka Kizuki ,  Noriyuki Tanino ,  Junichi Somei

IPC分类号： H01P1/10 ,  H01P1/15

CPC分类号： H03K17/693 ,  H01P1/15

摘要： A high frequency switch device has SPDT(A), SPDT(B), and SPDT(C) switches, each having one pole and a first port and a second port, wherein the second port of the SPDT(A) is grounded via a terminating resistor and the second port of the SPDT(B) is grounded via a terminating resistor, respectively, and the first port of the SPDT(A) and the first port of the SPDT(B) are respectively connected to the first port and the second port of the SPDT(C).

摘要翻译： 高频开关装置具有SPDT（A），SPDT（B）和SPDT（C）开关，每个开关具有一个极和第一端口和第二端口，其中SPDT（A）的第二端口经由 终端电阻和SPDT（B）的第二个端口分别通过终端电阻接地，SPDT（A）的第一个端口和SPDT（B）的第一个端口分别连接到第一个端口和 SPDT（C）的第二个港口。

公开(公告)号：US20050077978A1

公开(公告)日：2005-04-14

申请号：US10957651

申请日：2004-10-05

申请人： Hirotaka Kizuki ,  Noriyuki Tanino ,  Junichi Somei

发明人： Hirotaka Kizuki ,  Noriyuki Tanino ,  Junichi Somei

IPC分类号： H01P1/15 ,  H03K17/00 ,  H03K17/693 ,  H04B1/18

CPC分类号： H03K17/693 ,  H01P1/15

摘要： A high frequency switch device has SPDT(A), SPDT(B), and SPDT(C) switches, each having one pole and a first port and a second port, wherein the second port of the SPDT(A) is grounded via a terminating resistor and the second port of the SPDT(B) is grounded via a terminating resistor, respectively, and the first port of the SPDT(A) and the first port of the SPDT(B) are respectively connected to the first port and the second port of the SPDT(C).

摘要翻译： 高频开关装置具有SPDT（A），SPDT（B）和SPDT（C）开关，每个开关具有一个极和第一端口和第二端口，其中SPDT（A）的第二端口经由 终端电阻和SPDT（B）的第二个端口分别通过终端电阻接地，SPDT（A）的第一个端口和SPDT（B）的第一个端口分别连接到第一个端口和 SPDT（C）的第二个港口。

公开(公告)号：US5548246A

公开(公告)日：1996-08-20

申请号：US438472

申请日：1995-05-10

申请人： Kazuya Yamamoto ,  Noriyuki Tanino ,  Tetsuya Umemoto

发明人： Kazuya Yamamoto ,  Noriyuki Tanino ,  Tetsuya Umemoto

IPC分类号： H03F3/68 ,  H03F1/02 ,  H03F3/21 ,  H03F3/24 ,  H04B1/16 ,  H03F1/14 ,  H03F3/16 ,  H03F3/191

CPC分类号： H03F3/211 ,  H03F1/0277 ,  H03F1/56

摘要： A power amplifier comprises opposite input and output terminals, a first amplifier circuit connected between the input terminal and the output terminal and comprising a first amplifier FET and a first matching circuit, and a second amplifier circuit connected between the input terminal and the output terminal and comprising a second amplifier FET, a second matching circuit, and a switching circuit. In this power amplifier, the first amplifier circuit outputs an output signal of a first power level when the first amplifier FET is operated while the second amplifier FET is not operated and the switching circuit is turned off, and the second amplifier circuit outputs an output signal of a second power level when the first amplifier FET is not operated while the second amplifier FET is operated and the switching circuit is turned on. Therefore, impedances of the output side matching circuits of the first and second amplifier circuits which output amplified signals of different power levels can be optimized with high precision. As the result, in both the high-power output operation and the low-power output operation, the efficiencies of the first and second amplifier circuits are significantly improved.

摘要翻译： 功率放大器包括相对的输入和输出端子，连接在输入端子和输出端子之间并包括第一放大器FET和第一匹配电路的第一放大器电路，以及连接在输入端子和输出端子之间的第二放大器电路，以及 包括第二放大器FET，第二匹配电路和开关电路。 在该功率放大器中，当第一放大器FET工作而第二放大器FET不工作且开关电路断开时，第一放大器电路输出第一功率电平的输出信号，第二放大电路输出输出信号 当第二放大器FET工作时第一放大器FET不工作并且开关电路导通时，具有第二功率电平。 因此，可以高精度地优化输出不同功率电平的放大信号的第一和第二放大器电路的输出侧匹配电路的阻抗。 结果，在大功率输出操作和低功率输出操作中，第一和第二放大器电路的效率显着提高。

公开(公告)号：US5352998A

公开(公告)日：1994-10-04

申请号：US130555

申请日：1993-10-01

申请人： Noriyuki Tanino

发明人： Noriyuki Tanino

IPC分类号： H01L21/60 ,  H01L23/367 ,  H01L23/48 ,  H01L23/522 ,  H01L23/64 ,  H01L23/66 ,  H01L25/16 ,  H01P1/30 ,  H01P3/08 ,  H01P11/00 ,  H01L23/12

CPC分类号： H01L23/367 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/64 ,  H01L23/642 ,  H01L23/645 ,  H01L23/647 ,  H01L23/66 ,  H01L25/16 ,  H01L2224/32188 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10T29/49126

摘要： A microwave integrated circuit includes a semiconductor substrate having semiconductor elements, such as transistors, diodes, resistors, and the like, and a passive circuit substrate having passive circuit elements, such as microstrip or coplanar transmission lines, spiral inductors, capacitances, and the like, on its front surface. The passive circuit substrate is mounted on the semiconductor substrate so that the rear surface of the passive circuit substrate faces the surface of the semiconductor substrate on which the semiconductor elements are present, and the semiconductor elements are electrically connected to the elements or grounding conductors of the passive circuit substrate via through-holes or bumps. The passive circuit substrate includes a thin dielectric film having less dielectric loss than the semiconductor substrate, and the passive circuit elements, especially the transmission lines, are disposed on the dielectric substrate. Therefore, the transmission lines have a very small loss in a range from microwave to millimeter-wave frequency bands.

摘要翻译： 微波集成电路包括具有诸如晶体管，二极管，电阻等的半导体元件的半导体衬底，以及具有诸如微带或共面传输线之类的无源电路元件的无源电路衬底，螺旋电感器，电容等 ，在其前面。 无源电路基板安装在半导体基板上，使得无源电路基板的后表面面对存在半导体元件的半导体基板的表面，并且半导体元件电连接到半导体元件的元件或接地导体 无源电路基板通过通孔或凸块。 无源电路衬底包括具有比半导体衬底更少的介电损耗的薄电介质膜，并且无源电路元件，特别是传输线设置在电介质衬底上。 因此，传输线在从微波到毫米波频带的范围内具有非常小的损耗。

公开(公告)号：US5072142A

公开(公告)日：1991-12-10

申请号：US561977

申请日：1990-08-02

申请人： Noriyuki Tanino

发明人： Noriyuki Tanino

IPC分类号： H01P1/15 ,  H03K17/687

CPC分类号： H01P1/15

摘要： A semiconductor integrated circuit includes a first FET for controlling transfer of a high frequency signal, first and second capacitors connected to a gate of the first FET directly or through a resistor or a 1/4 wavelength line, a second FET having its drain connected to the first capacitor and its source grounded at high frequencies band, and a third FET having its drain connected to said second capacitor and its source grounded at high frequencies.

公开(公告)号：US5932926A

公开(公告)日：1999-08-03

申请号：US795790

申请日：1997-02-05

申请人： Takaya Maruyama ,  Takahide Ishikawa ,  Noriyuki Tanino

发明人： Takaya Maruyama ,  Takahide Ishikawa ,  Noriyuki Tanino

IPC分类号： H01L23/12 ,  H01L23/66 ,  H01L23/34

CPC分类号： H01L23/66 ,  H01L2223/6627 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2924/1903

摘要： A microwave semiconductor integrated circuit having high isolation includes a wiring-side substrate including a transmission line in slots at a surface; an element-side substrate having an active element on a surface, the transmission line being embedded in the wiring-side substrate; and metal bumps electrically connecting the transmission line embedded in the wiring-side substrate to electrodes of the active element on the element-side substrate. Therefore, a connection between a transmission line and electrodes of an element, such as an FET or the like, can be easily realized without being affected by a difference in positional level between the transmission line and the electrodes. In addition, the element on the element-side substrate is not adversely affected by the subsequent fabrication of the slots and wiring layers and, therefore, the reliability of the integrated circuit is not adversely affected. Furthermore, since the element and the transmission line are mounted on separate substrates, focusing is easy during the exposure for forming masks used for etching the slots and wiring layers in the wiring-side substrate because there is no unevenness within the substrate surface, facilitating the fabrication of masks.

摘要翻译： 具有高隔离度的微波半导体集成电路包括在表面的槽中包括传输线的布线侧基板; 元件侧基板，其表面上具有有源元件，所述传输线嵌入在所述布线侧基板中; 以及金属凸块将嵌入在布线侧基板中的传输线与元件侧基板上的有源元件的电极电连接。 因此，可以容易地实现传输线和诸如FET等的元件的电极之间的连接，而不受传输线和电极之间的位置水平差的影响。 此外，元件侧基板上的元件不受后续制造槽和布线层的不利影响，因此集成电路的可靠性不受不利影响。 此外，由于元件和传输线安装在单独的基板上，因为在基板表面中没有不均匀性，因此在用于形成用于蚀刻布线侧基板中的槽和布线层的掩模的曝光期间，聚焦容易， 制作面具。

公开(公告)号：US5267270A

公开(公告)日：1993-11-30

申请号：US682969

申请日：1991-04-10

申请人： Miyo Miyashita ,  Noriyuki Tanino

发明人： Miyo Miyashita ,  Noriyuki Tanino

IPC分类号： H04L25/06 ,  H03K5/02

CPC分类号： H03K5/023

摘要： A digital transmission circuit for processing and outputting a digital output signal includes a mark density detecting circuit for detecting the amplitude of the DC signal component of the digital signal and a DC level shifter superposing a DC signal component on the digital signal in response to the detected amplitude. Thereby, the output signal level, regardless of the mark density of the input signal, does not drift.

摘要翻译： 用于处理和输出数字输出信号的数字传输电路包括用于检测数字信号的DC信号分量的振幅的标记密度检测电路和响应于检测到的数字信号叠加DC信号分量的DC电平移位器 振幅。 因此，无论输入信号的标记密度如何，输出信号电平都不会漂移。

公开(公告)号：US4910472A

公开(公告)日：1990-03-20

申请号：US204127

申请日：1988-06-06

申请人： Noriyuki Tanino

发明人： Noriyuki Tanino

IPC分类号： H03K3/354

CPC分类号： H03K3/354

摘要： A multivibrator circuit employing field effect transistors which operates with a high oscillation frequency and low power consumption comprises four series connections. The first series connection comprises a parallel connection including a resistor R.sub.1 and a diode D.sub.1 connected in parallel, and two field effect transistors Q.sub.1 and Q.sub.3, the first series connection being provided between the power supply V.sub.DD1 and the ground V.sub.SS. The second series connection comprises a field effect transistor Q.sub.5, diodes D.sub.3 for shifting a level and a field effect transistor Q.sub.7, the second series connection being provided between the power supply V.sub.DD2 and the ground V.sub.SS. The third series connection comprises R.sub.2, a diode D.sub.2 and two field effect transistors Q.sub.2 and Q.sub.4 in the same manner as in the first series connection. The fourth series connection comprises a field effect device Q.sub.6, diodes D.sub.4 for shifting a level and a field effect device Q.sub.8 in the same manner as in the second series connection. The first and second outputs are connected to the second and fourth series connections, respectively. A capacitor C.sub.1 is connected between the sources of the field effect transistors Q.sub.1 and Q.sub.2.

公开(公告)号：US5338989A

公开(公告)日：1994-08-16

申请号：US627979

申请日：1990-12-17

申请人： Noriyuki Tanino

发明人： Noriyuki Tanino

IPC分类号： H03F3/60 ,  H03K17/687 ,  G06G7/10 ,  H03K3/01 ,  H03K3/353

CPC分类号： H03F3/601

摘要： A microwave integrated circuit comprises a first field effect transistor (FET) whose source is grounded via a capacitor and is connected to a source bias constant current source and to the drains of second field effect transistors whose gates are connected to a voltage power supply, an input matching circuit which is connected between the gate of the first FET and an input terminal, and an output matching circuit which is connected between the drain of the first FET and an output terminal. A drain current of the first FET having an almost constant value flows independent of variations in the direct current transistor characteristics and a rapid switching response is obtained when the first FET is driven on or off by a pulse.

摘要翻译： 微波集成电路包括第一场效应晶体管（FET），其源极通过电容器接地并连接到源极偏置恒流源，并连接到第二场效应晶体管的漏极，栅极连接到电压电源， 连接在第一FET的栅极和输入端子之间的输入匹配电路和连接在第一FET的漏极和输出端子之间的输出匹配电路。 具有几乎恒定值的第一FET的漏极电流独立于直流晶体管特性的变化流动，并且当通过脉冲驱动第一FET被驱动或接通时，获得快速的开关响应。

公开(公告)号：US5905654A

公开(公告)日：1999-05-18

申请号：US134798

申请日：1993-10-12

申请人： Noriyuki Tanino ,  Yoshinobu Sasaki

发明人： Noriyuki Tanino ,  Yoshinobu Sasaki

IPC分类号： H01L21/82 ,  G06F17/50 ,  H01L21/822 ,  H01L27/04

CPC分类号： G06F17/5068

摘要： A method of designing the layout of milliwave and microwave integrated circuits using a computer aided design system includes displaying each of a plurality of kinds of lumped circuit elements and distributed constant transmission lines for an integrated circuit on a cathode ray tube display as respective closed drawing objects, each object having an area and dimension representing electrical data; connecting the drawing objects displayed on the cathode ray tube display by overlapping edges of them with each other to produce a virtual integrated circuit having the circuit construction of the integrated circuit; and performing logical operations on the overlapping drawing objects of the virtual integrated circuit according to a design rule defined in accordance with a production process for producing the integrated circuit to produce at least one mask pattern for manufacturing the integrated circuit.

摘要翻译： 使用计算机辅助设计系统设计微波和微波集成电路的布局的方法包括将阴极射线管显示器上的集成电路元件和集成电路的分布常数传输线中的每一个显示为相应的封闭绘图对象 每个物体具有表示电气数据的面积和尺寸; 通过使阴极射线管显示器上显示的绘图对象通过它们彼此重叠的边缘来连接，以产生具有集成电路的电路结构的虚拟集成电路; 以及根据根据用于制造集成电路的生产过程定义的设计规则对虚拟集成电路的重叠绘图对象执行逻辑运算，以产生用于制造集成电路的至少一个掩模图案。