公开(公告)号：US11805702B2

公开(公告)日：2023-10-31

申请号：US17313976

申请日：2021-05-06

Applicant: Yimin Guo ,  Rongfu Xiao ,  Jun Chen

Inventor： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

IPC: H10N50/01 ,  H01F10/32 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10N50/01 ,  G11C11/161 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: A perpendicular magnetoresistive element comprises (counting from the element bottom): a reference layer having magnetic anisotropy in a direction perpendicular to a film surface and having an invariable magnetization direction; a tunnel barrier layer; a crystalline recording layer having magnetic anisotropy in a direction perpendicular to a film surface and having a variable magnetization direction; an oxide buffer layer; and a cap layer, wherein the crystalline recording layer consists of a CoFe alloy that is substantially free of boron and has BCC (body-centered cubic) CoFe grains having epitaxial growth with (100) plane parallel to a film surface.

公开(公告)号：US20230039108A1

公开(公告)日：2023-02-09

申请号：US17392672

申请日：2021-08-03

Applicant: Yimin GUO ,  Rongfu XIAO ,  Jun CHEN

Inventor： Yimin GUO ,  Rongfu XIAO ,  Jun CHEN

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

Abstract: The invention comprises a method of forming a magnetic free layer having a (100) texture and a novel magnetic pinning structure having a (100) textured or cube-textured reference layer through a non-epitaxial texturing approach so that an excellent coherent tunneling effect is achieved in a pMTJ element due to its texture structure of Fe or CoFe BCC (100)/MgO rocksalt (100)/Fe or CoFe BCC (100). The invention also discloses a pMTJ element comprising a soft-magnetic adjacent layer having at least one high-permeability material layer having a near-zero magnetostriction. Correspondingly, a high MR ratio and a coherent domain reversal of the magnetic free layer can be achieved for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

公开(公告)号：US11450467B2

公开(公告)日：2022-09-20

申请号：US17105381

申请日：2020-11-25

Applicant: Yimin Guo ,  Rongfu Xiao ,  Jun Chen

Inventor： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

IPC: H01L43/10 ,  H01F10/32 ,  H01L43/12 ,  H01F41/30

Abstract: A magnetoresistive element comprises a novel iPMA cap layer on a surface of a recording layer to induce a giant interfacial perpendicular magnetic anisotropy (G-iPMA) of the recording layer and a method of making the same. The recording layer comprises a first free layer immediately contacting to the tunnel barrier layer and having a body-centered cubic structure with a (100) texture, and a second free layer having a body-centered cubic structure with a (110) texture or a face-centered cubic structure with a (111) texture, and a crystal-breaking layer inserted between the first free layer and the second free layer.

公开(公告)号：US11450466B2

公开(公告)日：2022-09-20

申请号：US16997879

申请日：2020-08-19

Applicant: Yimin Guo ,  Rongfu Xiao ,  Jun Chen

Inventor： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

IPC: H01L43/02 ,  H01F10/32 ,  H01L43/12 ,  H01F41/32 ,  H01L43/10

Abstract: The invention comprises a novel composite seed structure (CSS) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

公开(公告)号：US20220165470A1

公开(公告)日：2022-05-26

申请号：US17105381

申请日：2020-11-25

Applicant: Yimin Guo ,  Rongfu Xiao ,  Jun Chen

Inventor： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

IPC: H01F10/32 ,  H01L43/10 ,  H01L43/12 ,  H01F41/30

Abstract: A magnetoresistive element comprises a novel iPMA cap layer on a surface of a recording layer to induce a giant interfacial perpendicular magnetic anisotropy (G-iPMA) of the recording layer and a method of making the same. The recording layer comprises a first free layer immediately contacting to the tunnel barrier layer and having a body-centered cubic structure with a (100) texture, and a second free layer having a body-centered cubic structure with a (110) texture or a face-centered cubic structure with a (111) texture, and a crystal-breaking layer inserted between the first free layer and the second free layer.

公开(公告)号：US20220059270A1

公开(公告)日：2022-02-24

申请号：US16997879

申请日：2020-08-19

Applicant: Yimin Guo ,  Rongfu Xiao ,  Jun Chen

Inventor： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

IPC: H01F10/32 ,  H01L43/02 ,  H01L43/12 ,  H01F41/32

Abstract: The invention comprises a novel composite seed structure (CSS) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

公开(公告)号：US11251367B2

公开(公告)日：2022-02-15

申请号：US16806193

申请日：2020-03-02

Applicant: Yimin Guo ,  Rongfu Xiao ,  Jun Chen

Inventor： Yimin Guo ,  Rongfu Xiao ,  Jun Chen

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  H01L43/12 ,  H01L43/08

Abstract: The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

公开(公告)号：US08711528B1

公开(公告)日：2014-04-29

申请号：US13538650

申请日：2012-06-29

Applicant: Rongfu Xiao ,  Guanxiong Li ,  Zhihong Zhang ,  Ming Mao ,  Chen-Jung Chien

Inventor： Rongfu Xiao ,  Guanxiong Li ,  Zhihong Zhang ,  Ming Mao ,  Chen-Jung Chien

IPC: G11B5/39

CPC classification number: G11B5/3909 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3912 ,  G11B5/398 ,  H01L43/12 ,  Y10T29/49052

Abstract: A tunnel magnetoresistance (TMR) read sensor having a tabbed AFM layer and an extended pinned layer and methods for making the same are provided. The TMR read sensor has an AFM layer recessed from the air bearing surface, providing a reduced shield-to-shield distance.

Abstract translation: 提供具有带标签的AFM层和扩展的钉扎层的隧道磁阻（TMR）读取传感器及其制造方法。 TMR读取传感器具有从空气轴承表面凹入的AFM层，从而减少屏蔽与屏蔽距离。

公开(公告)号：US07936027B2

公开(公告)日：2011-05-03

申请号：US12006889

申请日：2008-01-07

Applicant: Rongfu Xiao ,  Chyu-Jiuh Torng ,  Tom Zhong ,  Witold Kula

Inventor： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Tom Zhong ,  Witold Kula

IPC: G11C11/02

CPC classification number: H01L43/12 ,  H01L43/08

Abstract: An MTJ cell without footings and free from electrical short-circuits across a tunneling barrier layer is formed by using a Ta hard mask layer and a combination of etches. A first etch patterns the Ta hard mask, while a second etch uses O2 applied in a single high power process at two successive different power levels. A first power level of between approximately 200 W and 500 W removes BARC, photoresist and Ta residue from the first etch, the second power level, between approximately 400 W and 600 W continues an etch of the stack layers and forms a protective oxide around the etched sides of the stack. Finally, an etch using a carbon, hydrogen and oxygen gas completes the etch while the oxide layer protects the cell from short-circuits across the lateral edges of the barrier layer.

Abstract translation: 通过使用Ta硬掩模层和蚀刻的组合，形成没有底脚并且穿过隧道势垒层的电短路的MTJ电池。 第一蚀刻图案Ta硬掩模，而第二蚀刻使用在两个连续的不同功率水平下在单个高功率过程中施加的O2。 在大约200W至500W之间的第一功率电平从第一蚀刻去除BARC，光致抗蚀剂和Ta残留物，第二功率电平在大约400W至600W之间，继续蚀刻叠层，并在其周围形成保护氧化物 蚀刻边的堆叠。 最后，使用碳，氢和氧气的蚀刻完成了蚀刻，而氧化物层保护电池免受横跨阻挡层的侧边缘的短路。

公开(公告)号：US06466418B1

公开(公告)日：2002-10-15

申请号：US09502035

申请日：2000-02-11

Applicant: Cheng T. Horng ,  Min Li ,  Simon H. Liao ,  Ru-Ying Tong ,  Chyu Jiuh Torng ,  Rongfu Xiao

Inventor： Cheng T. Horng ,  Min Li ,  Simon H. Liao ,  Ru-Ying Tong ,  Chyu Jiuh Torng ,  Rongfu Xiao

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/325 ,  Y10T29/49044

Abstract: A method for forming a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element with continuous spacer exchange hard bias and a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element fabricated according to that method. To practice the method, there is provided a substrate upon which is formed a seed layer, upon which is formed an antiferromagnetic pinning layer, upon which is formed a ferromagnetic pinned layer, upon which is formed a non-magnetic spacer layer, upon which is formed a ferromagnetic free layer, upon which is formed a specularly reflecting and capping layer. The width of the sensor element is defined by a pair of conducting leads aligned upon a pair of continuous spacer exchange hard bias layers.

Abstract translation: 用于形成具有连续间隔物交换硬偏置的镜面反射底部自旋阀磁阻（SVMR）传感器元件的方法和根据该方法制造的镜面反射底部自旋阀磁阻（SVMR）传感器元件。 为了实现该方法，提供了一个衬底，在其上形成一种晶种层，在其上形成反铁磁钉扎层，在其上形成铁磁性钉扎层，在其上形成非磁性间隔层， 形成铁磁自由层，在其上形成镜面反射和覆盖层。 传感器元件的宽度由在一对连续间隔物交换硬偏压层上对准的一对导电引线限定。