公开(公告)号：US20050184815A1

公开(公告)日：2005-08-25

申请号：US11030009

申请日：2005-01-05

申请人： Steven Lipp ,  Joseph Abeles ,  Alan Braun ,  Sterling McBride ,  John Riganati ,  Ralph Whaley ,  Peter Zanzucchi

发明人： Steven Lipp ,  Joseph Abeles ,  Alan Braun ,  Sterling McBride ,  John Riganati ,  Ralph Whaley ,  Peter Zanzucchi

IPC分类号： H01J25/50

CPC分类号： G04F5/14

摘要： A cell suitable for use with an atomic clock and a method for making the same, the cell including: a silicon wafer having a recess formed therein; at least one amorphous silicate member having an ion mobility and temperature expansion coefficient approximately that of silicon sealing the recess; and, an alkali metal containing component and buffer gas contained in the recess. The method includes: providing a silicon wafer; forming a cavity through the silicon wafer; introducing an alkali metal containing component and buffer gas into the cavity; and, anodically bonding at least one amorphous silicate member having an ion mobility and temperature expansion coefficient approximately that of silicon to the wafer to close the cavity.

摘要翻译： 适用于原子钟的电池及其制造方法，所述电池包括：形成有凹部的硅晶片; 至少一种无定形硅酸盐部件，其离子迁移率和温度膨胀系数近似于密封凹部的硅的非晶硅酸盐部件; 以及包含在所述凹部中的含碱金属成分和缓冲气体。 该方法包括：提供硅晶片; 通过硅晶片形成空腔; 将含碱金属的组分和缓冲气体引入所述空腔中; 并且将具有大约硅的离子迁移率和温度膨胀系数的至少一种无定形硅酸盐构件阳极结合到晶片上以封闭空腔。

公开(公告)号：US20050117844A1

公开(公告)日：2005-06-02

申请号：US10831535

申请日：2004-04-23

申请人： Joseph Abeles ,  David Capewell ,  Lou DiMarco ,  Martin Kwakernaak ,  Nagendranath Maley ,  Hooman Mohseni ,  Ralph Whaley ,  Liyou Yang

发明人： Joseph Abeles ,  David Capewell ,  Lou DiMarco ,  Martin Kwakernaak ,  Nagendranath Maley ,  Hooman Mohseni ,  Ralph Whaley ,  Liyou Yang

IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/132 ,  G02B6/42 ,  G02B6/26

CPC分类号： G02B6/132 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/1223 ,  G02B6/424 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12142

摘要： A method for photonically coupling to at least one active photonic device structure formed on a substrate, the method including: etching the active device structure with a high selectivity towards a crystallographic plane to form a sloped terminice with respect to the substrate; and, depositing at least one waveguide over the etched terminice and at least a portion of the substrate; wherein, the waveguide is photonically coupled to the etched active device structure to provide photonic interconnectivity for the etched active device structure.

摘要翻译： 一种用于光子耦合到在衬底上形成的至少一个有源光子器件结构的方法，所述方法包括：以高选择性向结晶平面蚀刻有源器件结构，以相对于衬底形成倾斜的终端; 以及在蚀刻的端子和衬底的至少一部分上沉积至少一个波导; 其中，所述波导光学耦合到所述蚀刻的有源器件结构，以为蚀刻的有源器件结构提供光子互连。

公开(公告)号：US20050259937A1

公开(公告)日：2005-11-24

申请号：US11091186

申请日：2005-03-28

申请人： Ralph Whaley ,  Joseph Abeles ,  Martin Kwakernaak ,  Viktor Khalfin ,  Winston Chan ,  Haiyan An ,  Steven Lipp

发明人： Ralph Whaley ,  Joseph Abeles ,  Martin Kwakernaak ,  Viktor Khalfin ,  Winston Chan ,  Haiyan An ,  Steven Lipp

IPC分类号： G02B6/10 ,  G02B6/12 ,  G02B6/122 ,  H01L21/00

CPC分类号： G02B6/122 ,  G02B6/10 ,  G02B2006/12097

摘要： An optical system including: a substrate having a recess; and, a substantially planar, semiconductor waveguiding membrane suspended over the recess and having a thickness less than about 200 nm; wherein, the optical system supports a propagating optical mode having a majority of its energy external to the semiconductor waveguiding membrane.

摘要翻译： 一种光学系统，包括：具有凹部的基板; 以及悬挂在所述凹部上并且具有小于约200nm的厚度的基本上平面的半导体波导膜; 其中，光学系统支持其半导体波导膜外部具有大部分能量的传播光学模式。

公开(公告)号：US20050152424A1

公开(公告)日：2005-07-14

申请号：US10922795

申请日：2004-08-20

申请人： Viktor Khalfin ,  Joseph Abeles ,  Martin Kwakernaak ,  Ralph Whaley ,  Haiyan An

发明人： Viktor Khalfin ,  Joseph Abeles ,  Martin Kwakernaak ,  Ralph Whaley ,  Haiyan An

IPC分类号： B32B5/18 ,  H01S3/03 ,  H01S5/00 ,  H01S5/042 ,  H01S5/10 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32

CPC分类号： H01S5/20 ,  H01S5/0421 ,  H01S5/105 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/204 ,  H01S5/2201 ,  H01S5/2238 ,  H01S5/3211 ,  H01S5/3213 ,  H01S2304/12

摘要： A high efficiency, low voltage defect laser, and a method of forming a high efficiency laser. The low voltage defect laser includes at least one p-clad layer, at least one n-clad layer, and at least one waveguide of at least a plurality of quantum wells. The at least one waveguide is sandwiched at least between the p-clad layer and the n-clad layer, and at least one permeable crystal layer may be embedded in the p-clad layer and immediately adjacent to the at least one waveguide. The method includes growing an AlGaAs layer atop a GaAs layer, etching of the AlGaAs into submicron structure, oxidizing the AlGaAs, SAG undoped growing of an SAG undoped GaAs atop the GaAs layer, and regrowing, with p++ doped GaAs, of a planar-buried p++ GaAs.

摘要翻译： 一种高效率，低电压缺陷激光器和形成高效激光器的方法。 所述低电压缺陷激光器包括至少一个p覆盖层，至少一个n覆层和至少多个量子阱的至少一个波导。 所述至少一个波导至少夹在所述p覆盖层和所述n覆层之间，并且至少一个可透过的晶体层可以嵌入所述p覆盖层中并且紧邻所述至少一个波导。 该方法包括在GaAs层之上生长AlGaAs层，将AlGaAs蚀刻成亚微米结构，在GaAs层顶上氧化AlGaAs，SAG未掺杂的GaAs的SAG未掺杂生长，并用p + >掺杂GaAs，一个平面埋置的p ++ GaAs。