Method for verifying and choosing lithography model
    1.
    发明授权
    Method for verifying and choosing lithography model 有权
    验证和选择光刻模型的方法

    公开(公告)号:US07536670B2

    公开(公告)日:2009-05-19

    申请号:US11141805

    申请日:2005-05-31

    IPC分类号: G06F17/50

    摘要: A test mask with both verification structures and calibration structures is provided to enable the formation of an image of at least one verification structure and at least one calibration structure at a plurality of different test site locations under different dose and defocus conditions to allow the calibration structures to be measured and to obtain at least one computational model for optical proximity correction purposes.

    摘要翻译: 提供具有验证结构和校准结构的测试掩模,以使得能够在不同剂量和散焦条件下在多个不同测试位置处形成至少一个验证结构的图像和至少一个校准结构,以允许校准结构 以获得用于光学邻近校正目的的至少一个计算模型。

    Method and system for tracking images
    2.
    发明申请
    Method and system for tracking images 有权
    跟踪图像的方法和系统

    公开(公告)号:US20070183763A1

    公开(公告)日:2007-08-09

    申请号:US11348891

    申请日:2006-02-07

    IPC分类号: G03B17/00

    CPC分类号: G03B15/00 G01C21/20 G03B41/00

    摘要: A method for image tracking includes receiving a plurality of images of a first object at points along a predetermined route at least two spaced apart cameras including a first camera and a second camera, calibrating the cameras based on the received images of the first object and the predetermined route, receiving at least one image of a second object at the calibrated cameras, and determining a position of the second object based on one of the received images of the second object at the first camera. A method of image tracking includes associating at least one object with a unique identifier and receiving a plurality of images of the object moving in a field of view of at least two spaced apart cameras. The method further includes determining a position of the object based on the unique identifier and generating a position information based on the determination.

    摘要翻译: 一种用于图像跟踪的方法包括在沿着预定路线的点沿着包括第一相机和第二相机的至少两个间隔开的相机的点处接收多个图像,基于所接收的第一对象的图像和 在校准的相机处接收第二物体的至少一个图像,以及基于在第一相机处的第二物体的接收图像之一来确定第二物体的位置。 图像跟踪的方法包括将至少一个对象与唯一标识符相关联,并且接收在至少两个间隔开的相机的视野中移动的对象的多个图像。 该方法还包括基于唯一标识符确定对象的位置,并且基于该确定生成位置信息。

    TECHNIQUES FOR EFFICIENT IMPLEMENTATION OF BROWNIAN BRIDGE ALGORITHM ON SIMD PLATFORMS
    3.
    发明申请
    TECHNIQUES FOR EFFICIENT IMPLEMENTATION OF BROWNIAN BRIDGE ALGORITHM ON SIMD PLATFORMS 审中-公开
    在SIMD平台上有效实施BROWNIAN BRIDGE算法的技术

    公开(公告)号:US20100082939A1

    公开(公告)日:2010-04-01

    申请号:US12242411

    申请日:2008-09-30

    IPC分类号: G06F15/00

    CPC分类号: G06F17/10

    摘要: Methods and apparatus for implementing Brownian Bridge algorithm on Single Instruction Multiple Data (SIMD) computing platforms are described. In one embodiment, a memory stores a plurality of data corresponding to an SIMD (Single Instruction, Multiple Data) instruction. A processor may include a plurality of SIMD lanes. Each of the plurality of the SIMD lanes may process one of the plurality of data stored in the memory in accordance with the SIMD instruction. Other embodiments are also described.

    摘要翻译: 描述了单指令多数据(SIMD)计算平台实现布朗桥算法的方法和装置。 在一个实施例中,存储器存储对应于SIMD(单指令,多数据)指令的多个数据。 处理器可以包括多个SIMD通道。 多个SIMD通道中的每一个可以根据SIMD指令处理存储在存储器中的多个数据之一。 还描述了其它实施例。

    Method for real time monitoring and verifying optical proximity correction model and method
    5.
    发明申请
    Method for real time monitoring and verifying optical proximity correction model and method 有权
    用于实时监测和验证光学邻近校正模型和方法的方法

    公开(公告)号:US20070006116A1

    公开(公告)日:2007-01-04

    申请号:US11169616

    申请日:2005-06-30

    IPC分类号: G06F17/50

    摘要: This invention relates to a method for real time monitoring and verifying optical proximity correction (OPC) models and methods in production. Prior to OPC is performed on the integrated circuit layout, a model describing the optical, physical and chemical processes involving lithography should be obtained accurately and precisely. In general, the model is calibrated using the measurements obtained by running wafers through the same lithography, patterning, and etch processes. In this invention, a novel real time method for verifying and monitoring the calibrated model on a production or monitor wafer is presented: optical proximity corrected (OPC-ed) test and verification structures are placed on scribe lines or cut lines of the production or monitor wafer, and with pre-determined schedule, the critical dimensions and images of these test and verification structures are monitored across wafer and across exposure field.

    摘要翻译: 本发明涉及一种用于实时监测和验证生产中的光学邻近校正(OPC)模型和方法的方法。 在对集成电路布局进行OPC之前,应准确准确地描述涉及光刻的光学,物理和化学过程的模型。 通常,使用通过相同的光刻,图案化和蚀刻工艺运行晶片获得的测量来校准模型。 在本发明中,提出了一种用于在生产或监控晶圆上验证和监测校准模型的新型实时方法:将光学邻近校正(OPC-ed)测试和验证结构放置在生产或监视器的划线或切割线上 晶圆,并且具有预定的时间表,这些测试和验证结构的关键尺寸和图像在晶片和曝光场之间进行监测。

    Method for real time monitoring and verifying optical proximity correction model and method
    7.
    发明授权
    Method for real time monitoring and verifying optical proximity correction model and method 有权
    用于实时监测和验证光学邻近校正模型和方法的方法

    公开(公告)号:US07392502B2

    公开(公告)日:2008-06-24

    申请号:US11169616

    申请日:2005-06-30

    IPC分类号: G06F17/50

    摘要: This invention relates to a method for real time monitoring and verifying optical proximity correction (OPC) models and methods in production. Prior to OPC is performed on the integrated circuit layout, a model describing the optical, physical and chemical processes involving lithography should be obtained accurately and precisely. In general, the model is calibrated using the measurements obtained by running wafers through the same lithography, patterning, and etch processes. In this invention, a novel real time method for verifying and monitoring the calibrated model on a production or monitor wafer is presented: optical proximity corrected (OPC-ed) test and verification structures are placed on scribe lines or cut lines of the production or monitor wafer, and with pre-determined schedule, the critical dimensions and images of these test and verification structures are monitored across wafer and across exposure field.

    摘要翻译: 本发明涉及一种用于实时监测和验证生产中的光学邻近校正(OPC)模型和方法的方法。 在对集成电路布局进行OPC之前,应准确准确地描述涉及光刻的光学,物理和化学过程的模型。 通常,使用通过相同的光刻,图案化和蚀刻工艺运行晶片获得的测量来校准模型。 在本发明中,提出了一种用于在生产或监控晶圆上验证和监测校准模型的新型实时方法:将光学邻近校正(OPC-ed)测试和验证结构放置在生产或监视器的划线或切割线上 晶圆,并且具有预定的时间表,这些测试和验证结构的关键尺寸和图像在晶片和曝光场之间进行监控。