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    Method of compensating photomask data for the effects of etch and lithography processes
    3.
    发明申请
    Method of compensating photomask data for the effects of etch and lithography processes 有权
    补偿光掩模数据的方法，用于蚀刻和光刻工艺的影响

    公开(公告)号：US20070143733A1

    公开(公告)日：2007-06-21

    申请号：US11541921

    申请日：2006-10-02

    申请人： Franz Zach ,  Jesus Carrero ,  Bayram Yenikaya ,  Gokhan Percin ,  Xuelong Cao ,  Abdurrahman Sezginer

    发明人： Franz Zach ,  Jesus Carrero ,  Bayram Yenikaya ,  Gokhan Percin ,  Xuelong Cao ,  Abdurrahman Sezginer

    IPC分类号： G06F17/50

    CPC分类号： G03F1/36

    摘要： A method for synthesizing a photomask data set from a given target layout, including the following steps: (a) providing a set of target polygons for the target layout; (b) fitting a smooth curve to a target polygon of the set of target polygons, the curve having a set of etch-target points; (c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points; and (d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.

    摘要翻译： 一种用于从给定目标布局合成光掩模数据集的方法，包括以下步骤：（a）为目标布局提供一组目标多边形; （b）将平滑曲线拟合到所述目标多边形集合的目标多边形，所述曲线具有一组蚀刻目标点; （c）根据蚀刻工艺的模型移动蚀刻目标点以产生一组光刻目标点; 以及（d）基于光刻工艺的模型和所述一组光刻目标点合成光掩模数据集。

    Method for measuring and verifying stepper illumination
    4.
    发明申请
    Method for measuring and verifying stepper illumination 有权
    步进照明的测量和验证方法

    公开(公告)号：US20060268254A1

    公开(公告)日：2006-11-30

    申请号：US11141803

    申请日：2005-05-31

    申请人： Gokhan Percin ,  Abdurrahman Sezginer ,  Franz Zach

    发明人： Gokhan Percin ,  Abdurrahman Sezginer ,  Franz Zach

    IPC分类号： G03B27/72

    CPC分类号： G03F7/7025 ,  G03F7/70591

    摘要： An apparatus and method for characterizing an illumination pupil of an exposure tool comprises forming a plurality of pinhole test patterns at a plurality of test site locations to facilitate locating test pattern edges for extracting therefrom the illumination pupil characteristics of the exposure tool.

    摘要翻译： 用于表征曝光工具的照明光瞳的装置和方法包括在多个测试位置处形成多个针孔测试图案，以便于定位测试图案边缘以从其中提取曝光工具的照明光瞳特性。

    Method and system for reducing the impact of across-wafer variations on critical dimension measurements
    5.
    发明申请
    Method and system for reducing the impact of across-wafer variations on critical dimension measurements 有权

    公开(公告)号：US20060073686A1

    公开(公告)日：2006-04-06

    申请号：US10971350

    申请日：2004-10-22

    申请人： Franz Zach ,  Abdurrahman Sezginer ,  Gokhan Percin

    发明人： Franz Zach ,  Abdurrahman Sezginer ,  Gokhan Percin

    IPC分类号： H01L21/22

    CPC分类号： G03B27/72 ,  G03F7/70441 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641

    摘要： First and second exposures of a mask onto a wafer are performed such that the exposure field of the second exposure partially overlaps the exposure field of the first exposure. A characteristic of a set of features is determined, and a value of a parameter of an optical proximity correction model is determined. An alignment feature can be used to align a measurement tool. In yet another embodiment, pupil intensity distribution of an imaging system is measured by exposing an image field of a radiation detector with a bright feature, positioning the detector at a distance away from the image plane, and exposing the image field of the detector with a bright feature, resulting in a cumulative exposure of the image field of the detector from the two exposures. A characteristic of a spatial pattern in the cumulative exposure of the image field of the detector is then determined.

    Apparatus and method for photomask design
    6.
    发明授权
    Apparatus and method for photomask design 有权
    光掩模设计的设备和方法

    公开(公告)号：US07743359B2

    公开(公告)日：2010-06-22

    申请号：US11203330

    申请日：2005-08-13

    申请人： Abdurrahman Sezginer ,  Roy Prasad ,  Chi-Song Horng ,  Hsu-Ting Huang

    发明人： Abdurrahman Sezginer ,  Roy Prasad ,  Chi-Song Horng ,  Hsu-Ting Huang

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5009 ,  G03F1/36 ,  G03F7/70441 ,  G06F17/5068

    摘要： An apparatus and method of synthesizing a photolithographic data set includes using a first computational model to calculate a first figure-of-merit for the photolithographic data set; changing a first part of the photolithographic data set to increase the first figure-of-merit; and then using a second computational model to calculate a second figure-of-merit of the photolithographic data set; and changing a second part of the photolithographic data set to increase the second figure-of-merit. The second computational model enables figure-of-merit calculations to be executed at a significantly faster execution rate than the first computational model.

    摘要翻译： 合成光刻数据集的装置和方法包括使用第一计算模型来计算光刻数据集的第一像素值; 改变光刻数据集的第一部分以增加第一品质因数; 然后使用第二计算模型来计算光刻数据集的第二像素值; 以及改变光刻数据集的第二部分以增加第二品质因数。 第二种计算模型能够以比第一种计算模型快得多的执行速度执行品质因数计算。

    Apparatus and method for photomask design
    7.
    发明申请
    Apparatus and method for photomask design 有权
    光掩模设计的设备和方法

    公开(公告)号：US20060248498A1

    公开(公告)日：2006-11-02

    申请号：US11203330

    申请日：2005-08-13

    申请人： Abdurrahman Sezginer ,  Roy Prasad ,  Chi-Song Horng ,  Hsu-Ting Huang

    发明人： Abdurrahman Sezginer ,  Roy Prasad ,  Chi-Song Horng ,  Hsu-Ting Huang

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5009 ,  G03F1/36 ,  G03F7/70441 ,  G06F17/5068

    摘要： An apparatus and method of synthesizing a photolithographic data set includes using a first computational model to calculate a first figure-of-merit for the photolithographic data set; changing a first part of the photolithographic data set to increase the first figure-of-merit; and then using a second computational model to calculate a second figure-of-merit of the photolithographic data set; and changing a second part of the photolithographic data set to increase the second figure-of-merit. The second computational model enables figure-of-merit calculations to be executed at a significantly faster execution rate that the first computational model.

    摘要翻译： 合成光刻数据集的装置和方法包括使用第一计算模型来计算光刻数据集的第一像素值; 改变光刻数据集的第一部分以增加第一品质因数; 然后使用第二计算模型来计算光刻数据集的第二像素值; 以及改变光刻数据集的第二部分以增加第二品质因数。 第二计算模型使得能够以优于第一计算模型的执行速率执行优质图计算。

    Method and system for reducing the impact of across-wafer variations on critical dimension measurements
    9.
    发明授权
    Method and system for reducing the impact of across-wafer variations on critical dimension measurements 有权
    减少跨晶圆变化对临界尺寸测量的影响的方法和系统

    公开(公告)号：US07588868B2

    公开(公告)日：2009-09-15

    申请号：US10971350

    申请日：2004-10-22

    申请人： Franz X. Zach ,  Abdurrahman Sezginer ,  Gokhan Percin

    发明人： Franz X. Zach ,  Abdurrahman Sezginer ,  Gokhan Percin

    IPC分类号： G03F9/00 ,  G03C5/00

    CPC分类号： G03B27/72 ,  G03F7/70441 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641

    摘要： First and second exposures of a mask onto a wafer are performed such that the exposure field of the second exposure partially overlaps the exposure field of the first exposure. A characteristic of a set of features is determined, and a value of a parameter of an optical proximity correction model is determined. An alignment feature can be used to align a measurement tool. In yet another embodiment, pupil intensity distribution of an imaging system is measured by exposing an image field of a radiation detector with a bright feature, positioning the detector at a distance away from the image plane, and exposing the image field of the detector with a bright feature, resulting in a cumulative exposure of the image field of the detector from the two exposures. A characteristic of a spatial pattern in the cumulative exposure of the image field of the detector is then determined.

    摘要翻译： 进行掩模在晶片上的第一曝光和第二曝光，使得第二曝光的曝光场部分地与第一曝光的曝光场重叠。 确定一组特征的特征，并且确定光学邻近校正模型的参数的值。 对齐功能可用于对齐测量工具。 在另一个实施例中，成像系统的光瞳强度分布是通过用明亮特征曝光放射线检测器的图像场，将检测器定位在距离图像平面一定距离处，并且将检测器的图像场用 明亮的特征，导致来自两次曝光的检测器的图像场的累积曝光。 然后确定检测器的图像场的累积曝光中的空间图案的特性。

    Method of compensating photomask data for the effects of etch and lithography processes
    10.
    发明授权
    Method of compensating photomask data for the effects of etch and lithography processes 有权
    补偿光掩模数据的方法，用于蚀刻和光刻工艺的影响

    公开(公告)号：US07600212B2

    公开(公告)日：2009-10-06

    申请号：US11541921

    申请日：2006-10-02

    申请人： Franz X. Zach ,  Jesus Carrero ,  Bayram Yenikaya ,  Gokhan Percin ,  Xuelong Cao ,  Abdurrahman Sezginer

    发明人： Franz X. Zach ,  Jesus Carrero ,  Bayram Yenikaya ,  Gokhan Percin ,  Xuelong Cao ,  Abdurrahman Sezginer

    IPC分类号： G06F17/50

    CPC分类号： G03F1/36

    摘要： A method for synthesizing a photomask data set from a given target layout, including the following steps: (a) providing a set of target polygons for the target layout; (b) fitting a smooth curve to a target polygon of the set of target polygons, the curve having a set of etch-target points; (c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points; and (d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.

    摘要翻译： 一种用于从给定目标布局合成光掩模数据集的方法，包括以下步骤：（a）为目标布局提供一组目标多边形; （b）将平滑曲线拟合到所述目标多边形集合的目标多边形，所述曲线具有一组蚀刻目标点; （c）根据蚀刻工艺的模型移动蚀刻目标点以产生一组光刻目标点; 以及（d）基于光刻工艺的模型和所述一组光刻目标点合成光掩模数据集。