公开(公告)号：US5869390A

公开(公告)日：1999-02-09

申请号：US871552

申请日：1997-06-09

申请人： Kozo Nishimura ,  Koji Kobashi ,  Shigeaki Miyauchi ,  Rie Kato ,  Hisashi Koyama ,  Kimitsugu Saito

发明人： Kozo Nishimura ,  Koji Kobashi ,  Shigeaki Miyauchi ,  Rie Kato ,  Hisashi Koyama ,  Kimitsugu Saito

IPC分类号： H01L21/28 ,  H01L21/04 ,  H01L23/14 ,  H01L23/373 ,  H01L21/44 ,  H01L21/00

CPC分类号： H01L21/0435 ,  H01L21/043 ,  H01L23/3732 ,  H01L2924/0002 ,  Y10S148/10 ,  Y10S148/148

摘要： Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of the specimen; and removing the mask, thereby forming a specified pattern of the electrodes. By this method, it is possible to form electrodes having high adhesion to diamond and diamond film for electronic devices.

摘要翻译： 公开了一种在金刚石上形成电极的方法，包括以下步骤：在金刚石或金刚石膜上形成掩模图案; 通过惰性气体的等离子体处理金刚石表面; 在试样的整个表面上形成电极膜; 并除去掩模，从而形成电极的指定图案。 通过该方法，可以形成对于电子器件的金刚石和金刚石膜具有高粘附性的电极。

公开(公告)号：US5358754A

公开(公告)日：1994-10-25

申请号：US908084

申请日：1992-07-06

申请人： Koji Kobashi ,  Shigeaki Miyauchi ,  Kozo Nishimura ,  Kazuo Kumagai ,  Rie Kato

发明人： Koji Kobashi ,  Shigeaki Miyauchi ,  Kozo Nishimura ,  Kazuo Kumagai ,  Rie Kato

IPC分类号： C23C16/26 ,  C23C16/27 ,  C23C16/46 ,  C23C16/50 ,  C23C16/503 ,  C30B29/04 ,  B05D3/06

CPC分类号： C23C16/272 ,  C23C16/277 ,  C23C16/503

摘要： A method for forming diamond films by vapor phase synthesis comprising a process of forming the diamond films on a substrate by direct current discharge plasma, in an atmosphere of a reaction gas including a gas containing at least carbon and hydrogen, or in an atmosphere of a mixed gas containing at least a carbon-containing gas and a hydrogen gas, at a gas pressure between 0.1 and 5 Torr and a substrate temperature between 300.degree. and 1000.degree. C.

摘要翻译： 通过气相合成形成金刚石膜的方法包括通过直流放电等离子体在包括至少含有碳和氢的气体的反应气体的气氛中或在气相中的气氛中在基板上形成金刚石膜的方法 含有至少含碳气体和氢气的混合气体，气体压力为0.1〜5托，基板温度为300〜1000℃。

公开(公告)号：US5770467A

公开(公告)日：1998-06-23

申请号：US622858

申请日：1996-03-29

申请人： Kozo Nishimura ,  Koji Kobashi ,  Shigeaki Miyauchi ,  Rie Kato ,  Hisashi Koyama ,  Kimitsugu Saito

发明人： Kozo Nishimura ,  Koji Kobashi ,  Shigeaki Miyauchi ,  Rie Kato ,  Hisashi Koyama ,  Kimitsugu Saito

IPC分类号： H01L21/28 ,  H01L21/04 ,  H01L23/14 ,  H01L23/373 ,  H01L21/441

CPC分类号： H01L21/0435 ,  H01L21/043 ,  H01L23/3732 ,  H01L2924/0002 ,  Y10S148/10 ,  Y10S148/148

摘要： Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of the specimen; and removing the mask, thereby forming a specified pattern of the electrodes. By this method, it is possible to form electrodes having high adhesion to diamond and diamond film for electronic devices.

公开(公告)号：US5432357A

公开(公告)日：1995-07-11

申请号：US280135

申请日：1994-07-25

申请人： Rie Kato ,  Koji Kobashi

发明人： Rie Kato ,  Koji Kobashi

IPC分类号： G01K7/22 ,  H01C7/00 ,  H01C7/04 ,  H01L37/00 ,  H01L49/00

CPC分类号： H01C7/042 ,  H01C7/008 ,  H01L24/05 ,  H01L2224/04042 ,  H01L2224/48463

摘要： A pair of electrodes 3 are first formed on a substrate. Subsequently, an undoped diamond film is selectively deposited between the above electrodes. A B-doped diamond film is then selectively formed on both the insulating diamond film and part of each electrode. The substrate may be contained in a container provided with an opening portion from which only the B-doped diamond film is exposed.

摘要翻译： 首先在基板上形成一对电极3。 随后，在上述电极之间选择性地沉积未掺杂的金刚石膜。 然后在绝缘金刚石膜和每个电极的一部分上选择性地形成B掺杂的金刚石膜。 衬底可以包含在设置有仅暴露B掺杂金刚石膜的开口部的容器中。