摘要:
A high voltage CMOS switch circuit having an arrangement of device connections such that the individual transistor devices are substantially the same size, improving performance while reducing size and providing breakdown protection. The circuit switches a high voltage to the output based on a low voltage input. The circuit is ratio-less and self-biased, capable of operating a very low supply voltage compared to the state of the art.
摘要:
The present invention relates in general to a method, apparatus, and article of manufacture for providing high-speed digital communications through a communications channel. In one aspect, the present invention employs a variable rate back channel, incorporated within an existing communication that does not increase or adversely impact the transmission rate of data on the communication channel.
摘要:
In one well bias arrangement, no well bias voltage is applied to the n-well, and no well bias voltage is applied to the p-well. Because no external well bias voltage is applied, the n-well and the p-well are floating, even during operation of the devices in the n-well and the p-well. In another well bias arrangement, the lowest available voltage is not applied to the p-well, such as a ground voltage, or the voltage applied to the n+-doped source region of the n-type transistor in the p-well. This occurs even during operation of the n-type transistor in the p-well. In yet another well bias arrangement, the highest available voltage is not applied to the n-well, such as a supply voltage, or the voltage applied to the p+-doped source region of the p-type transistor in the n-well. This occurs even during operation of the p-type transistor in the n-well.
摘要:
Systems and techniques for adapting and/or optimizing an equalizer of a receiver are described. The equalizer's behavior can be adjusted by modifying one or more equalization parameters. At the beginning of the adaptation and/or optimization process, the system can determine robust initial values for the one or more equalization parameters. The system can then adapt and/or optimize the equalizer by iteratively adjusting the one or more equalization parameters. Specifically, in each iteration, the system can use the receiver's clock and data recovery (CDR) circuitry to determine the number of early and late data transitions associated with one or more data patterns. Next, the system can adjust the one or more equalization parameters so that, for each data pattern in the one or more data patterns, the ratio between the number of early data transitions and the number of late data transitions is substantially equal to a desired value.
摘要:
Systems and techniques for adapting and/or optimizing an equalizer of a receiver are described. The equalizer's behavior can be adjusted by modifying one or more equalization parameters. At the beginning of the adaptation and/or optimization process, the system can determine robust initial values for the one or more equalization parameters. The system can then adapt and/or optimize the equalizer by iteratively adjusting the one or more equalization parameters. Specifically, in each iteration, the system can use the receiver's clock and data recovery (CDR) circuitry to determine the number of early and late data transitions associated with one or more data patterns. Next, the system can adjust the one or more equalization parameters so that, for each data pattern in the one or more data patterns, the ratio between the number of early data transitions and the number of late data transitions is substantially equal to a desired value.
摘要:
The present invention relates in general to a method, apparatus, and article of manufacture for providing high-speed digital communications through a communications channel. In one aspect, the present invention employs a variable rate back channel, incorporated within an existing communication that does not increase or adversely impact the transmission rate of data on the communication channel.
摘要:
An electrostatic discharge (ESD) device implemented within a power domain to mitigate ESD events imparted from another power domain for reducing integrated circuit (IC) failures. A first power domain includes an interface where ESD events are received and an output that can impart ESD event voltages on other components. A second power domain includes an ESD device coupled to the output of the first power domain and a protected IC. In one embodiment, the ESD device includes a floating device with an input terminal coupled to the interface output. By floating the device receiving the ESD event in the second power domain, damaging ESD induced voltages are reduced. Embodiments of the ESD device can be implemented using standard cell libraries to simplify integration.
摘要:
An on-die scope is described. The on-die scope can include one or more scope slicers, phase sweeping circuitry, voltage sweeping circuitry, and eye-diagram data collection circuitry. The clock and data recovery circuitry can receive an input signal, and output a recovered clock signal and a recovered bit-stream. The phase sweeping circuitry can receive the recovered clock signal, and output the scope clock signal by adding a phase offset to the recovered clock signal. A scope slicer can receive the voltage threshold, the scope clock signal, and the input signal, and output a scope bit-stream. The eye-diagram data collection circuitry can detect one or more bit-patterns in the recovered bit-stream, and modify values of one or more scope counters based solely or partly on the scope bit-stream and the recovered bit-stream.
摘要:
An embodiment of a pumped substrate system includes an oscillator, capacitive pump, comparing circuit, and a level shifter. The level shifter is coupled between the substrate and the positive input lead of the comparator and shifts the voltage level present on the substrate by a voltage Vbg. The comparator compares ground potential to the shifted substrate voltage. The oscillator, capacitive pump and comparing circuit form a negative feedback loop which operates to maintain the substrate voltage substantially equal to -Vbg. In one embodiment, the level shifter includes a band gap reference.
摘要:
An electrostatic discharge (ESD) device implemented within a power domain to mitigate ESD events imparted from another power domain for reducing integrated circuit (IC) failures. A first power domain includes an interface where ESD events are received and an output that can impart ESD event voltages on other components. A second power domain includes an ESD device coupled to the output of the first power domain and a protected IC. In one embodiment, the ESD device includes a floating device with an input terminal coupled to the interface output. By floating the device receiving the ESD event in the second power domain, damaging ESD induced voltages are reduced. Embodiments of the ESD device can be implemented using standard cell libraries to simplify integration.