公开(公告)号：US20170335455A1

公开(公告)日：2017-11-23

申请号：US15672163

申请日：2017-08-08

申请人： SPTS Technologies Ltd.

发明人： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

IPC分类号： C23C16/455 ,  B82Y30/00 ,  C23C16/448 ,  B05D1/00 ,  B05D3/14

CPC分类号： C23C16/45557 ,  B05D1/60 ,  B05D3/142 ,  B82Y30/00 ,  C23C16/4485 ,  C23C16/45561

摘要： An apparatus for vapor deposition of thin film coatings, including: a process controller; a plurality of precursor containers into which a plurality of coating precursors, each in the form of a liquid or a solid, are respectively placed; a plurality of precursor vapor reservoirs, each in communication with a respective one of said precursor containers; a plurality of in-line devices which control a vapor flow of a coating precursor vapor from one of said precursor containers into one of said precursor vapor reservoirs with which said precursor container is in communication upon receipt of a signal from said process controller; a plurality of precursor control valves which control vapor flow from said precursor vapor reservoir upon receipt of a signal from said process controller; and a process chamber for vapor deposition of said coating on a substrate when present in said process chamber.

公开(公告)号：US11961722B2

公开(公告)日：2024-04-16

申请号：US18074496

申请日：2022-12-04

申请人： SPTS Technologies Ltd.

发明人： Anthony Wilby ,  Steve Burgess ,  Ian Moncrieff ,  Clive Widdicks ,  Scott Haymore ,  Rhonda Hyndman

IPC分类号： H01J37/34 ,  B81B3/00 ,  C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  H01J37/32 ,  H01L21/02 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01J37/3408 ,  B81B3/0072 ,  C23C14/345 ,  C23C14/3471 ,  C23C14/351 ,  C23C14/50 ,  C23C14/505 ,  H01J37/32669 ,  H01J37/32715 ,  H01J37/3452 ,  H01J37/3467 ,  H01J37/347 ,  H01J37/3485 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/2855 ,  H01L21/76877 ,  B81C2201/017 ,  B81C2201/0181

摘要： A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

公开(公告)号：US20230094699A1

公开(公告)日：2023-03-30

申请号：US18074496

申请日：2022-12-04

申请人： SPTS Technologies Ltd.

发明人： Anthony WILBY ,  Steve Burgess ,  Ian Moncrieff ,  Clive Widdicks ,  Scott Haymore ,  Rhonda Hyndman

IPC分类号： H01J37/34 ,  C23C14/35 ,  B81B3/00 ,  C23C14/50 ,  H01J37/32 ,  H01L21/02 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768

摘要： A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

公开(公告)号：US10900123B2

公开(公告)日：2021-01-26

申请号：US15672163

申请日：2017-08-08

申请人： SPTS Technologies Ltd.

发明人： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

IPC分类号： C23C16/455 ,  B05D1/00 ,  B82Y30/00 ,  C23C16/448 ,  B05D3/14

摘要： An apparatus for vapor deposition of thin film coatings, including: a process controller; a plurality of precursor containers into which a plurality of coating precursors, each in the form of a liquid or a solid, are respectively placed; a plurality of precursor vapor reservoirs, each in communication with a respective one of said precursor containers; a plurality of in-line devices which control a vapor flow of a coating precursor vapor from one of said precursor containers into one of said precursor vapor reservoirs with which said precursor container is in communication upon receipt of a signal from said process controller; a plurality of precursor control valves which control vapor flow from said precursor vapor reservoir upon receipt of a signal from said process controller; and a process chamber for vapor deposition of said coating on a substrate when present in said process chamber.

公开(公告)号：US20240263303A1

公开(公告)日：2024-08-08

申请号：US18105828

申请日：2023-02-04

申请人： SPTS Technologies Ltd.

发明人： Michael Grimes ,  Yuyuan Lin

IPC分类号： C23C16/40 ,  C23C16/455

CPC分类号： C23C16/403 ,  C23C16/45527 ,  H01L21/02178

摘要： An inert coating is applied to less than an entirety of a surface of a substrate to form exposed regions on the substrate between the inert coating. Precursors are introduced around the substrate thereby forming a polymer coating directly on the exposed regions of the substrate. The polymer coating can be adsorbed on the exposed regions of the substrate.