摘要:
The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit to change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part.
摘要:
A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.
摘要:
A deposition tool includes a vacuum chamber and a physical vapor deposition module including a target source in the vacuum chamber. The target source includes a target material for depositing on a workpiece. An evaporator module is independent of the physical vapor deposition module and is mounted within an enclosure in the vacuum chamber. A gate is configured to selectively open the enclosure to permit evaporation of a coating element to coat the target source in the physical vapor deposition module.
摘要:
The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit to change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part.
摘要:
Reactive sputtering in which, by ion bombardment, material is ejected from the surface of a target and transitions to the gas phase. Negative voltage pulses are applied to the target to establish electric current having a current density greater than 0.5 A/cm2 at the target surface, such that the material transitioning to the gas phase is ionized. Reactive gas flow is established and reacts with the material of the target surface. Voltage pulse duration is such that, during the pulse, the target surface where the current flows is at least partly covered most of the time with a compound composed of reactive gas and target material and, consequently, the target surface is in a first intermediate state, and this covering is smaller at the end of the voltage pulse than at the start and, consequently, the target surface is in a second intermediate state at the end of the voltage pulse.
摘要翻译:反应溅射,其中通过离子轰击,材料从靶的表面喷射并转变到气相。 向目标施加负电压脉冲,以在目标表面建立电流密度大于0.5A / cm 2的电流,使得转移到气相的材料被电离。 建立反应性气体流动并与目标表面的材料反应。 电压脉冲持续时间使得在脉冲期间,电流流动的目标表面至少部分地被由反应性气体和靶材料组成的化合物大部分地覆盖,因此目标表面处于第一中间状态 并且该覆盖在电压脉冲结束时比在开始时更小,因此,目标表面在电压脉冲结束时处于第二中间状态。
摘要:
The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit of change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part.
摘要:
The present invention provides a mask alignment mechanism which reduces the occurrence of particles and which aligns a mask with high accuracy, and a vacuum processing apparatus including such a mask alignment mechanism. A mask alignment mechanism according to one embodiment of the present invention includes a substrate holder which is movable up and down when a substrate is transferred and on which four taper pins are formed, and a mask in which grooves are formed. The taper pins can be inserted into the grooves, respectively. The taper pins include a pair of long taper pins and a pair of short taper pins. The taper pins in each pair are disposed to face each other across the substrate. Tapered surfaces formed in the long taper pins and tapered surfaces formed in the short taper pins are located at different heights.
摘要:
A deposition tool includes a vacuum chamber and a physical vapor deposition module including a target source in the vacuum chamber. The target source includes a target material for depositing on a workpiece. An evaporator module is independent of the physical vapor deposition module and is mounted within an enclosure in the vacuum chamber. A gate is configured to selectively open the enclosure to permit evaporation of a coating element to coat the target source in the physical vapor deposition module.
摘要:
A mask alignment method for a substrate holding apparatus. A first engaging portion is formed in one of a substrate holder and a mask and has two protruding portions. A second engaging portion is formed in the other one of the substrate holder and the mask and has at least one protruding portion. First groove portions formed in the other one of the substrate holder and the mask engage with the protruding portions of the first engaging portion. A second groove portion formed in the other one of the substrate holder and the mask engages with the protruding portion of the second engaging portion. The mask alignment method includes the steps of (a) engaging the protruding portions of the first engaging portion with the first groove portions to align the mask with respect to the substrate holder in a first direction, and (b) engaging, after the step of engaging the protruding portions of the first engaging portion with the first groove portions, the protruding portion of the second engaging portion with the second groove portion, to align the mask with respect to the substrate holder in a direction perpendicular to the first direction.
摘要:
In a reactive sputtering apparatus, an inert-gas supplying hole is provided in a movable target unit whose one end is open and whose conductance is controlled, and a reactive gas containing at least fluorine or oxygen can be supplied to a space between the target and a substrate. The apparatus is constructed so as to emit the reactive gas toward the substrate. A reactive-gas emitting location is in the space between the target and the substrate such that a concentration of the reactive gas on the substrate surface can be maintained at a higher level. When the target is moved, a reactive-gas emitting port is moved or the reactive-gas emitting location is changed. The concentration of the reactive gas on the substrate surface can be effectively kept constant, and a high-quality optical thin film can be formed.