SPUTTERING APPARATUS
    1.
    发明申请
    SPUTTERING APPARATUS 审中-公开
    溅射装置

    公开(公告)号:US20160247667A1

    公开(公告)日:2016-08-25

    申请号:US15045639

    申请日:2016-02-17

    发明人: Yohsuke Shibuya

    IPC分类号: H01J37/34 B08B7/00 C23C14/34

    摘要: The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit to change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part.

    摘要翻译: 本发明提供一种能够确定目标的表面状态以执行对必要部件的准确和快速清洁的装置。 该装置包括:能够在目标表面上形成磁场的磁体单元; 能够驱动磁体单元来改变磁场图形的旋转系统; 以及电流计,被配置为当由磁体单元形成磁场时测量目标电流,并且对目标附着的目标电极施加放电电压。 通过旋转系统不同地改变磁体单元的位置,并且在每个位置测量目标电流并与参考值进行比较。 然后确定是否需要在每个位置进行清洁,从而可以仅对必需的部分执行清洁。

    Sputtering apparatus
    4.
    发明授权

    公开(公告)号:US09928998B2

    公开(公告)日:2018-03-27

    申请号:US15045639

    申请日:2016-02-17

    发明人: Yohsuke Shibuya

    摘要: The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit to change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part.

    REACTIVE SPUTTERING PROCESS
    5.
    发明申请
    REACTIVE SPUTTERING PROCESS 审中-公开
    反应溅射法

    公开(公告)号:US20140311892A1

    公开(公告)日:2014-10-23

    申请号:US14362758

    申请日:2012-11-23

    IPC分类号: C23C14/34

    摘要: Reactive sputtering in which, by ion bombardment, material is ejected from the surface of a target and transitions to the gas phase. Negative voltage pulses are applied to the target to establish electric current having a current density greater than 0.5 A/cm2 at the target surface, such that the material transitioning to the gas phase is ionized. Reactive gas flow is established and reacts with the material of the target surface. Voltage pulse duration is such that, during the pulse, the target surface where the current flows is at least partly covered most of the time with a compound composed of reactive gas and target material and, consequently, the target surface is in a first intermediate state, and this covering is smaller at the end of the voltage pulse than at the start and, consequently, the target surface is in a second intermediate state at the end of the voltage pulse.

    摘要翻译: 反应溅射,其中通过离子轰击,材料从靶的表面喷射并转变到气相。 向目标施加负电压脉冲,以在目标表面建立电流密度大于0.5A / cm 2的电流,使得转移到气相的材料被电离。 建立反应性气体流动并与目标表面的材料反应。 电压脉冲持续时间使得在脉冲期间,电流流动的目标表面至少部分地被由反应性气体和靶材料组成的化合物大部分地覆盖,因此目标表面处于第一中间状态 并且该覆盖在电压脉冲结束时比在开始时更小,因此,目标表面在电压脉冲结束时处于第二中间状态。

    SPUTTERING APPARATUS
    6.
    发明申请
    SPUTTERING APPARATUS 审中-公开
    溅射装置

    公开(公告)号:US20130277213A1

    公开(公告)日:2013-10-24

    申请号:US13922353

    申请日:2013-06-20

    发明人: Yohsuke SHIBUYA

    IPC分类号: C23C14/35

    摘要: The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit of change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part.

    摘要翻译: 本发明提供一种能够确定目标的表面状态以执行对必要部件的准确和快速清洁的装置。 该装置包括:能够在目标表面上形成磁场的磁体单元; 能够驱动所述磁体单元以改变所述磁场图案的旋转系统; 以及电流计,被配置为当由磁体单元形成磁场时测量目标电流,并且对目标附着的目标电极施加放电电压。 通过旋转系统不同地改变磁体单元的位置,并且在每个位置测量目标电流并与参考值进行比较。 然后确定是否需要在每个位置进行清洁,从而可以仅对必需的部分执行清洁。

    Substrate Holding Apparatus, Mask Alignment Method, and Vacuum Processing Apparatus
    7.
    发明申请
    Substrate Holding Apparatus, Mask Alignment Method, and Vacuum Processing Apparatus 有权
    基板保持装置,掩模对准方法和真空处理装置

    公开(公告)号:US20110051115A1

    公开(公告)日:2011-03-03

    申请号:US12850706

    申请日:2010-08-05

    IPC分类号: G03B27/60 G03B27/58

    摘要: The present invention provides a mask alignment mechanism which reduces the occurrence of particles and which aligns a mask with high accuracy, and a vacuum processing apparatus including such a mask alignment mechanism. A mask alignment mechanism according to one embodiment of the present invention includes a substrate holder which is movable up and down when a substrate is transferred and on which four taper pins are formed, and a mask in which grooves are formed. The taper pins can be inserted into the grooves, respectively. The taper pins include a pair of long taper pins and a pair of short taper pins. The taper pins in each pair are disposed to face each other across the substrate. Tapered surfaces formed in the long taper pins and tapered surfaces formed in the short taper pins are located at different heights.

    摘要翻译: 本发明提供一种掩模对准机构,其减少了颗粒的发生并且高精度地对准掩模,以及包括这种掩模对准机构的真空处理装置。 根据本发明的一个实施方式的掩模对准机构包括:基板保持器,当基板被转印并且其上形成有四个锥形销时可上下移动,并且形成有凹槽的掩模。 锥形销可以分别插入槽中。 锥形销包括一对长锥形销和一对短锥销。 每对中的锥形销设置成跨越衬底彼此面对。 形成在长锥销中的锥形表面和形成在短锥销中的锥形表面位于不同的高度。

    Substrate holding apparatus, mask alignment method, and vacuum processing apparatus using long taper pins and short taper pins for alignment
    9.
    发明授权
    Substrate holding apparatus, mask alignment method, and vacuum processing apparatus using long taper pins and short taper pins for alignment 有权
    基板保持装置,掩模对准方法和使用长锥销和用于对准的短锥销的真空处理装置

    公开(公告)号:US09082803B2

    公开(公告)日:2015-07-14

    申请号:US12850706

    申请日:2010-08-05

    IPC分类号: H01L21/68 C23C14/04 H01J37/34

    摘要: A mask alignment method for a substrate holding apparatus. A first engaging portion is formed in one of a substrate holder and a mask and has two protruding portions. A second engaging portion is formed in the other one of the substrate holder and the mask and has at least one protruding portion. First groove portions formed in the other one of the substrate holder and the mask engage with the protruding portions of the first engaging portion. A second groove portion formed in the other one of the substrate holder and the mask engages with the protruding portion of the second engaging portion. The mask alignment method includes the steps of (a) engaging the protruding portions of the first engaging portion with the first groove portions to align the mask with respect to the substrate holder in a first direction, and (b) engaging, after the step of engaging the protruding portions of the first engaging portion with the first groove portions, the protruding portion of the second engaging portion with the second groove portion, to align the mask with respect to the substrate holder in a direction perpendicular to the first direction.

    摘要翻译: 一种用于基板保持装置的掩模对准方法。 第一接合部分形成在衬底保持器和掩模之一中,并且具有两个突出部分。 第二接合部分形成在衬底保持器和掩模中的另一个中,并且具有至少一个突出部分。 形成在另一个基板保持器和掩模中的第一槽部与第一接合部的突出部接合。 形成在另一个基板保持器和掩模中的第二槽部与第二接合部的突出部接合。 掩模对准方法包括以下步骤:(a)将第一接合部分的突出部分与第一凹槽部分接合,以使掩模相对于基板保持器沿第一方向对准,并且(b)在步骤 将第一接合部分的突出部分与第一凹槽部分接合,第二接合部分的突出部分与第二凹槽部分相对于基板保持器在垂直于第一方向的方向上对准掩模。

    Reactive sputtering method
    10.
    发明授权
    Reactive sputtering method 失效
    反应溅射法

    公开(公告)号:US07575661B2

    公开(公告)日:2009-08-18

    申请号:US10898956

    申请日:2004-07-27

    IPC分类号: C23C14/35

    摘要: In a reactive sputtering apparatus, an inert-gas supplying hole is provided in a movable target unit whose one end is open and whose conductance is controlled, and a reactive gas containing at least fluorine or oxygen can be supplied to a space between the target and a substrate. The apparatus is constructed so as to emit the reactive gas toward the substrate. A reactive-gas emitting location is in the space between the target and the substrate such that a concentration of the reactive gas on the substrate surface can be maintained at a higher level. When the target is moved, a reactive-gas emitting port is moved or the reactive-gas emitting location is changed. The concentration of the reactive gas on the substrate surface can be effectively kept constant, and a high-quality optical thin film can be formed.

    摘要翻译: 在反应性溅射装置中,惰性气体供给孔设置在其一端敞开并且其电导被控制的可动目标单元中,并且至少含有氟或氧的反应性气体可以供应到靶和 底物。 该装置被构造成朝向基板发射反应性气体。 反应气体发射位置在靶和衬底之间的空间中,使得衬底表面上的反应气体的浓度可以保持在更高的水平。 当目标移动时,移动反应气体发射端口或改变反应气体发射位置。 可以有效地保持基板表面上的反应气体的浓度恒定,并且可以形成高质量的光学薄膜。