公开(公告)号：US20060075968A1

公开(公告)日：2006-04-13

申请号：US11087193

申请日：2005-03-23

申请人： Samuel Leung ,  Ulrich Bonne

发明人： Samuel Leung ,  Ulrich Bonne

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  B01J19/08

CPC分类号： C23C16/4401 ,  C23C16/52 ,  H01J37/32935 ,  H01J37/3299 ,  H01L21/67253

摘要： A method and apparatus for a plasma enhanced chemical vapor deposition system for processing one or more flat panel display substrates comprising a vacuum deposition process chamber configured to contain gas, a residual gas analyzer configured to analyze the gas within the process chamber and to provide feedback, and a controller to monitor feedback from the gas analyzer. Also, a method for identifying a process upset within a plasma enhanced chemical vapor deposition system configured to process flat panel display substrates comprising determining a historical slope of a line for partial pressure as a function of time, calculating a new slope of a line based on partial pressure measurements by a residual gas analyzer, comparing the historical and new slopes, and sending a signal to an operator.

摘要翻译： 一种用于处理一个或多个平板显示基板的等离子体增强化学气相沉积系统的方法和装置，包括：被配置为容纳气体的真空沉积处理室;残余气体分析器，被配置为分析处理室内的气体并提供反馈， 以及用于监测来自气体分析器的反馈的控制器。 另外，一种用于识别被配置为处理平板显示基板的等离子体增强化学气相沉积系统中的处理变形的方法，包括确定作为时间的函数的分压线的历史斜率，基于时间计算线的新斜率 通过残余气体分析仪进行分压测量，比较历史和新斜率，并向操作员发送信号。

公开(公告)号：US20080127887A1

公开(公告)日：2008-06-05

申请号：US11565968

申请日：2006-12-01

申请人： Samuel Leung ,  Andreas Geiss ,  Toshio Kiyotake ,  Erkan Koparal ,  Jose Albor ,  William Allan Bagley

发明人： Samuel Leung ,  Andreas Geiss ,  Toshio Kiyotake ,  Erkan Koparal ,  Jose Albor ,  William Allan Bagley

IPC分类号： C23C14/00

CPC分类号： H01J37/3402 ,  H01J37/3435

摘要： The present invention generally comprises a physical vapor deposition (PVD) system having separate susceptor, cathode, and lid sections in which each section is on a rail that elevates the sections off the ground. The cathode section may comprise a plurality of rotatable cathodes that lie in a plane such that the axis of rotation for the rotary cathodes is perpendicular to the ground. The lid section and the cathode section may be moved on the rails to open the cathode section for servicing. Of the plurality of rotatable cathodes, the cathodes corresponding to the center of the substrate upon which material will be deposited are spaced a greater distance from the substrate than rotatable cathodes corresponding to the edge of the substrate.

摘要翻译： 本发明通常包括具有单独的基座，阴极和盖部分的物理气相沉积（PVD）系统，其中每个部分在轨道上，使部分离开地面。 阴极部分可以包括位于平面中的多个可旋转的阴极，使得旋转阴极的旋转轴线垂直于地面。 盖部分和阴极部分可以在轨道上移动以打开阴极部分进行维修。 在多个可旋转阴极中，对应于衬底的中心的阴极将与衬底相对应的可旋转阴极与衬底间隔开距离更大的距离。

公开(公告)号：US06198727B1

公开(公告)日：2001-03-06

申请号：US08829668

申请日：1997-03-31

申请人： Timothy Wakeley ,  Samuel Leung ,  Shuosen Robert Liu ,  Keung Tang

发明人： Timothy Wakeley ,  Samuel Leung ,  Shuosen Robert Liu ,  Keung Tang

IPC分类号： H04L1226

CPC分类号： H04L49/351

摘要： A link device establishes links automatically to all 10Base-T and 100Base-TX partners regardless of their capability thereby assuring that the link device establishes links with all partners without the need to select a mode of operation manually. The modes of operation provided include 10Base-T half duplex, 100Base-TX half duplex, and 100Base-TX full duplex. The technique includes an algorithm that assures linkability between 10Base-T and 100Base-TX devices that are not 100% compliant with IEEE 802.3u, Clause 28. Using this algorithm, a link device links with 10Base-T and 100Base-TX half duplex legacy partners. Such devices also link with compliant 10Base-T and 100Base-TX auto-negotiating partners at 100Base-TX full duplex, and with non-compliant 10Base-T and 100Base-TX auto-negotiating devices at 100Base-TX half duplex.

摘要翻译： 链路设备自动建立所有10Base-T和100Base-TX合作伙伴的链接，无论其能力如何，从而确保链路设备与所有合作伙伴建立链接，而无需手动选择操作模式。 提供的操作模式包括10Base-T半双工，100Base-TX半双工和100Base-TX全双工。 该技术包括一种确保10Base-T和100Base-TX设备之间的可靠性的算法，该设备不符合IEEE 802.3u第28章的要求。使用该算法，链路设备与10Base-T和100Base-TX半双工传输链路 伙伴。 此类设备还可以通过100Base-TX全双工的符合10Base-T和100Base-TX自动协商伙伴，以及100Base-TX半双工的非兼容10Base-T和100Base-TX自动协商设备。

公开(公告)号：US20060207508A1

公开(公告)日：2006-09-21

申请号：US11367230

申请日：2006-03-02

申请人： Samuel Leung

发明人： Samuel Leung

IPC分类号： C23C16/00

CPC分类号： H01L21/68728 ,  C23C16/4585 ,  H01J37/32477 ,  H01L21/68778

摘要： The present invention relates generally to a clamping and alignment assembly for a substrate processing system. The clamping and aligning assembly generally includes a shadow frame, a floating shadow frame and a plurality of insulating alignment pins. The shadow frame comprises a plurality of fingers extending inwardly therefrom and is shaped to accommodate a substrate. The fingers comprise a spring loaded assembly for aligning and stabilizing a substrate on a support member during processing. The insulating alignment pins are disposed at a perimeter of a movable support member and cooperate with an alignment recess formed in the shadow frame to urge the shadow frame into a desired position. Preferably, the floating shadow frame is disposed on the insulating alignment pins in spaced relationship between the support member and the shadow frame to shield the perimeter of the support member during processing.

摘要翻译： 本发明一般涉及用于衬底处理系统的夹紧和对准组件。 夹持和对准组件通常包括阴影框架，浮动阴影框架和多个绝缘对准销钉。 阴影框架包括从其向内延伸的多个指状物，并且成形为容纳衬底。 手指包括用于在处理期间对准和稳定支撑构件上的基底的弹簧加载组件。 绝缘对准销布置在可移动支撑构件的周边处，并与形成在阴影框架中的对准凹槽配合，以将阴影框架推动到期望的位置。 优选地，浮动阴影框架以间隔开的关系在支撑构件和阴影框架之间设置在绝缘对准销上，以在处理期间屏蔽支撑构件的周边。

公开(公告)号：US08709162B2

公开(公告)日：2014-04-29

申请号：US11206245

申请日：2005-08-16

申请人： Samuel Leung ,  Su Ho Cho ,  William Allan Bagley

发明人： Samuel Leung ,  Su Ho Cho ,  William Allan Bagley

IPC分类号： C23C16/458 ,  C23C16/46 ,  H01L21/306 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/67

CPC分类号： C23C16/46 ,  C23C16/458 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4586 ,  C23C16/463 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67069 ,  H01L21/67103

摘要： A substrate support assembly and method for controlling the temperature of a substrate within a process chamber with a temperature uniformity of +/−5° C. are provided. A substrate support assembly includes a thermally conductive body comprising an aluminum material, a substrate support surface on the surface of the thermally conductive body and adapted to support the large area glass substrate thereon, one or more heating elements embedded within the thermally conductive body, and one or more cooling channels embedded within the thermally conductive body and positioned around the one or more heating elements. A process chamber comprising the substrate support assembly of the invention is also provided.

摘要翻译： 提供了一种用于控制温度均匀度为+/- 5℃的处理室内的衬底的温度的衬底支撑组件和方法。 衬底支撑组件包括导热体，该导热体包括铝材料，在导热体表面上的衬底支撑表面，并且适于支撑其上的大面积玻璃衬底，一个或多个嵌入导热体内的加热元件，以及 一个或多个冷却通道嵌入在导热体内并围绕一个或多个加热元件定位。 还提供了包括本发明的基板支撑组件的处理室。

公开(公告)号：US20070039942A1

公开(公告)日：2007-02-22

申请号：US11206245

申请日：2005-08-16

申请人： Samuel Leung ,  Su Ho Cho ,  William Bagley

发明人： Samuel Leung ,  Su Ho Cho ,  William Bagley

IPC分类号： F26B11/02 ,  H05B3/68 ,  C23C16/00

CPC分类号： C23C16/46 ,  C23C16/458 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4586 ,  C23C16/463 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67069 ,  H01L21/67103

摘要： A substrate support assembly and method for controlling the temperature of a substrate within a process chamber with a temperature uniformity of +/−5° C. are provided. A substrate support assembly includes a thermally conductive body comprising an aluminum material, a substrate support surface on the surface of the thermally conductive body and adapted to support the large area glass substrate thereon, one or more heating elements embedded within the thermally conductive body, and one or more cooling channels embedded within the thermally conductive body and positioned around the one or more heating elements. A process chamber comprising the substrate support assembly of the invention is also provided.

摘要翻译： 提供了一种用于控制温度均匀度为+/- 5℃的处理室内的衬底的温度的衬底支撑组件和方法。 衬底支撑组件包括导热体，该导热体包括铝材料，在导热体表面上的衬底支撑表面，并且适于支撑其上的大面积玻璃衬底，一个或多个嵌入导热体内的加热元件，以及 一个或多个冷却通道嵌入在导热体内并围绕一个或多个加热元件定位。 还提供了包括本发明的基板支撑组件的处理室。

公开(公告)号：US20060107973A1

公开(公告)日：2006-05-25

申请号：US11249025

申请日：2005-10-11

申请人： Samuel Leung

发明人： Samuel Leung

IPC分类号： B08B5/04 ,  B08B9/00 ,  B05C11/00 ,  C23C16/00

CPC分类号： B08B7/00 ,  B08B7/0035 ,  B08B9/00 ,  C23C16/4405 ,  C23C16/52

摘要： A substrate processing system, which includes a vacuum deposition process chamber having an exhaust outlet configured to discharge one or more particles during a deposition cycle and cleaning gas reactants during a cleaning cycle and an in-situ particle monitor coupled to the exhaust outlet. The in-situ particle monitor is configured to determine a starting point of the cleaning cycle. The plasma enhanced chemical vapor deposition system further includes an infrared endpoint detector assembly coupled to the exhaust outlet. The infrared endpoint detector assembly is configured to determine an endpoint of the cleaning cycle.

摘要翻译： 一种基板处理系统，其包括具有排气出口的真空沉积处理室，所述排气出口构造成在沉积循环期间排出一个或多个颗粒，并且在清洁循环期间清洁气体反应物以及耦合到排气出口的原位颗粒监测器。 原位粒子监测器被配置为确定清洁循环的起始点。 等离子体增强化学气相沉积系统还包括耦合到排气出口的红外端点检测器组件。 红外线端点检测器组件被配置为确定清洁周期的端点。