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    Method for making a graded barrier coating
    1.
    发明授权
    Method for making a graded barrier coating 有权
    制造分级屏障涂层的方法

    公开(公告)号：US08034419B2

    公开(公告)日：2011-10-11

    申请号：US12325827

    申请日：2008-12-01

    申请人： Ahmet Gun Erlat ,  Anil Duggal ,  Min Yan ,  Sheila Tandon ,  Brian Joseph Scherer

    发明人： Ahmet Gun Erlat ,  Anil Duggal ,  Min Yan ,  Sheila Tandon ,  Brian Joseph Scherer

    IPC分类号： H05H1/24

    CPC分类号： H01L21/76832 ,  C23C16/30 ,  C23C16/45523 ,  C23C16/50 ,  H01L51/5253 ,  H01L51/5256 ,  H01L2251/5346 ,  H01L2251/558

    摘要： Disclosed is a method relating to graded-composition barrier coatings comprising first and second materials in first and second zones. The compositions of one or both zones vary substantially continuously across a thickness of the zone in order to achieve improved properties such as barrier, flexibility, adhesion, optics, thickness, and tact time. The graded-composition barrier coatings find utility in preventing exposure of devices such as organic electro-luminescent devices (OLEDs) to reactive species found in the environment.

    摘要翻译： 公开了一种涉及在第一和第二区域中包含第一和第二材料的梯度组成阻挡涂层的方法。 一个或两个区域的组合物在区域的厚度上基本上连续地变化，以便实现改进的性能，例如屏障，柔性，粘合性，光学，厚度和节拍时间。 分级组合物阻隔涂层可用于防止诸如有机电致发光器件（OLED）等器件暴露于在环境中发现的反应性物质。

    Integration of buried oxide layers with crystalline layers
    4.
    发明申请
    Integration of buried oxide layers with crystalline layers 有权
    将掩埋氧化物层与结晶层集成

    公开(公告)号：US20060276002A1

    公开(公告)日：2006-12-07

    申请号：US11433736

    申请日：2006-05-12

    申请人： Sheila Tandon ,  Gale Petrich ,  Leslie Kolodziejski

    发明人： Sheila Tandon ,  Gale Petrich ,  Leslie Kolodziejski

    IPC分类号： H01L21/76

    CPC分类号： G02F1/3523 ,  G02F2201/346 ,  H01L33/10 ,  H01S3/1118 ,  H01S5/18311 ,  H01S5/18372

    摘要： A method of forming a buried oxide/crystalline III-V semiconductor dielectric stack is presented. The method includes providing a substrate and forming a layered structure on the substrate comprising of layers of different materials, one of the different materials is selected to be an oxidizable material to form one or more buried low index oxide layers. A first sequence of oxidizing steps are performed on the layered structure by exposing the edges of the layered structure to a succession of temperature increases in the presence of steam from an initial temperature to the desired oxidation temperature for a time interval equal to the sum of the time intervals of the succession of temperature increases. Also, the method includes performing a second sequential oxidizing step with steam on the layered structure at the specific oxidation temperature for a specific time interval. Furthermore, the method includes performing a final sequence of oxidizing steps on the structure by ramping down from the desired oxidation temperature to a final temperature when the oxidizing material is completely oxidized to form the one or more buried low index oxide layers.

    摘要翻译： 提出了形成掩埋氧化物/晶体III-V半导体电介质堆叠的方法。 该方法包括提供衬底并在包括不同材料的层的衬底上形成层状结构，不同材料之一被选择为可氧化材料以形成一个或多个掩埋的低折射率氧化物层。 通过将层状结构的边缘暴露于蒸汽存在下的一连串的温度升高，在层状结构上进行第一序列氧化步骤，时间间隔等于初始温度至期望的氧化温度 温度连续的时间间隔增加。 此外，该方法包括在特定氧化温度下在特定时间间隔内在层状结构上用蒸汽进行第二顺序氧化步骤。 此外，该方法包括当氧化材料被完全氧化以形成一个或多个掩埋的低折射率氧化物层时，通过从期望的氧化温度向下倾斜到最终温度，在结构上执行最终的氧化步骤序列。

    Integration of buried oxide layers with crystalline layers
    5.
    发明授权
    Integration of buried oxide layers with crystalline layers 有权
    将掩埋氧化物层与结晶层集成

    公开(公告)号：US08008215B2

    公开(公告)日：2011-08-30

    申请号：US11433736

    申请日：2006-05-12

    申请人： Sheila Tandon ,  Gale Petrich ,  Leslie Kolodziejski

    发明人： Sheila Tandon ,  Gale Petrich ,  Leslie Kolodziejski

    IPC分类号： H01L21/31

    CPC分类号： G02F1/3523 ,  G02F2201/346 ,  H01L33/10 ,  H01S3/1118 ,  H01S5/18311 ,  H01S5/18372

    摘要： A method of forming a buried oxide/crystalline III-V semiconductor dielectric stack is presented. The method includes providing a substrate and forming a layered structure on the substrate comprising of layers of different materials, one of the different materials is selected to be an oxidizable material to form one or more buried low index oxide layers. A first sequence of oxidizing steps are performed on the layered structure by exposing the edges of the layered structure to a succession of temperature increases in the presence of steam from an initial temperature to the desired oxidation temperature for a time interval equal to the sum of the time intervals of the succession of temperature increases. Also, the method includes performing a second sequential oxidizing step with steam on the layered structure at the specific oxidation temperature for a specific time interval. Furthermore, the method includes performing a final sequence of oxidizing steps on the structure by ramping down from the desired oxidation temperature to a final temperature when the oxidizing material is completely oxidized to form the one or more buried low index oxide layers.

    摘要翻译： 提出了形成掩埋氧化物/晶体III-V半导体电介质堆叠的方法。 该方法包括提供衬底并在包括不同材料的层的衬底上形成层状结构，不同材料之一被选择为可氧化材料以形成一个或多个掩埋的低折射率氧化物层。 通过将层状结构的边缘暴露于蒸汽存在下的一连串的温度升高，在层状结构上进行第一序列氧化步骤，时间间隔等于初始温度至期望的氧化温度 温度连续的时间间隔增加。 此外，该方法包括在特定氧化温度下在特定时间间隔内在层状结构上用蒸汽进行第二顺序氧化步骤。 此外，该方法包括当氧化材料被完全氧化以形成一个或多个掩埋的低折射率氧化物层时，通过从期望的氧化温度向下倾斜到最终温度，在结构上执行最终的氧化步骤序列。