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    Method of fabricating nitride semiconductor and method of fabricating semiconductor device
    2.
    发明授权
    Method of fabricating nitride semiconductor and method of fabricating semiconductor device 有权
    制造氮化物半导体的方法和制造半导体器件的方法

    公开(公告)号：US06960482B2

    公开(公告)日：2005-11-01

    申请号：US10184902

    申请日：2002-07-01

    申请人： Osamu Matsumoto ,  Shinichi Ansai ,  Satoru Kijima

    发明人： Osamu Matsumoto ,  Shinichi Ansai ,  Satoru Kijima

    IPC分类号： H01L29/43 ,  C30B33/00 ,  H01L21/28 ,  H01L21/285 ,  H01L21/316 ,  H01L21/324 ,  H01S5/042 ,  H01S5/323 ,  H01L21/00

    CPC分类号： C30B33/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/28575 ,  H01L21/3245

    摘要： A method of fabricating a nitride semiconductor includes the steps of forming a nitride semiconductor doped with a p-type impurity, treating the surface of the nitride semiconductor in an atmosphere containing active oxygen to remove carbon remaining on the surface and form an oxide film thereon, and activating the p-type impurity to turn the conductive type of the nitride semiconductor into a p-type. Since carbon remaining on the surface of the nitride semiconductor is removed and the oxide film is formed thereon, the surface of the nitride semiconductor is prevented from being deteriorated by the activating treatment and the rate of activating the p-type impurity is enhanced. As a result, it is possible to reduce the contact resistance of the nitride semiconductor with an electrode and, hence, the variation in characteristics of the nitride semiconductor.

    摘要翻译： 一种制造氮化物半导体的方法包括以下步骤：形成掺杂有p型杂质的氮化物半导体，在含有活性氧的气氛中处理氮化物半导体的表面以除去残留在表面上的碳并在其上形成氧化膜， 并激活p型杂质以使氮化物半导体的导电类型变为p型。 由于去除残留在氮化物半导体的表面上的碳，并且在其上形成氧化物膜，所以通过激活处理来防止氮化物半导体的表面劣化，并且提高了p型杂质的激活速率。 结果，可以降低氮化物半导体与电极的接触电阻，并因此降低氮化物半导体的特性的变化。

    Gan semiconductor device
    3.
    发明授权
    Gan semiconductor device 有权
    甘半导体器件

    公开(公告)号：US07372080B2

    公开(公告)日：2008-05-13

    申请号：US10517877

    申请日：2003-06-19

    申请人： Osamu Goto ,  Osamu Matsumoto ,  Tomomi Sasaki ,  Masao Ikeda

    发明人： Osamu Goto ,  Osamu Matsumoto ,  Tomomi Sasaki ,  Masao Ikeda

    IPC分类号： H01L29/22 ,  H01L33/00

    CPC分类号： H01S5/0207 ,  H01S5/0014 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/32341

    摘要： Provided is a GaN-based semiconductor light emitting device formed on a GaN single-crystal substrate and having a configuration capable of reducing a current leak.A GaN-based semiconductor laser device (50) is disclosed as an example of the GaN-based semiconductor light emitting device, and it is a semiconductor laser device having a structure such that a p-side electrode and an n-side electrode are provided on a multilayer structure of GaN-based compound semiconductor layers. The GaN-based semiconductor laser device (50) is similar in configuration to a conventional GaN-based semiconductor laser device formed on a sapphire substrate except that a GaN single-crystal substrate (52) is used in place of the sapphire substrate and that the multilayer structure is directly formed on the GaN single-crystal substrate (52) without providing a GaN-ELO structure layer. The GaN single-crystal substrate (52) has continuous belt-shaped core portions (52a) each having a width of 10 μm. These core portions (52a) are spaced apart from each other by a distance of about 400 μm. A laser stripe (30), a pad metal (37) for the p-side electrode (36), and the n-side electrode (38) are provided on the multilayer structure in a region except the core portions (52a) of the GaN single-crystal substrate (52). The horizontal distance Sp between the pad metal (37) and the core portion (52a) adjacent thereto is 95 μm, and the horizontal distance Sn between the n-side electrode (38) and the core portion (52a) adjacent thereto is also 95 μm.

    摘要翻译： 提供了一种形成在GaN单晶衬底上并具有能够减少电流泄漏的构造的GaN基半导体发光器件。 作为GaN系半导体发光元件的一例，公开了GaN系半导体激光元件（50），是具有p侧电极和n侧电极的结构的半导体激光元件 在GaN基化合物半导体层的多层结构上。 GaN基半导体激光器件（50）的结构与形成在蓝宝石衬底上的常规GaN基半导体激光器器件相似，除了使用GaN单晶衬底（52）代替蓝宝石衬底，并且 多层结构直接形成在GaN单晶衬底（52）上，而不提供GaN-ELO结构层。 GaN单晶衬底（52）具有宽度为10μm的连续的带状芯部（52a）。 这些芯部分（52a）彼此隔开约400μm的距离。 激光条纹（30），用于p侧电极（36）的焊盘金属（37）和n侧电极（38）设置在除了芯部（52a）的芯部 GaN单晶衬底（52）。 焊垫金属（37）与与其相邻的芯部（52a）之间的水平距离Sp为95μm，n侧电极（38）与与其相邻的芯部（52a）之间的水平距离Sn为 也是95妈妈。

    Gan semiconductor device
    4.
    发明申请
    Gan semiconductor device 有权
    甘半导体器件

    公开(公告)号：US20060097278A1

    公开(公告)日：2006-05-11

    申请号：US10517877

    申请日：2003-06-19

    申请人： Osamu Goto ,  Osamu Matsumoto ,  Tomomi Sasaki ,  Masao Ikeda

    发明人： Osamu Goto ,  Osamu Matsumoto ,  Tomomi Sasaki ,  Masao Ikeda

    IPC分类号： H01L33/00

    CPC分类号： H01S5/0207 ,  H01S5/0014 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/32341

    摘要： Provided is a GaN-based semiconductor light emitting device formed on a GaN single-crystal substrate and having a configuration capable of reducing a current leak. A GaN-based semiconductor laser device (50) is disclosed as an example of the GaN-based semiconductor light emitting device, and it is a semiconductor laser device having a structure such that a p-side electrode and an n-side electrode are provided on a multilayer structure of GaN-based compound semiconductor layers. The GaN-based semiconductor laser device (50) is similar in configuration to a conventional GaN-based semiconductor laser device formed on a sapphire substrate except that a GaN single-crystal substrate (52) is used in place of the sapphire substrate and that the multilayer structure is directly formed on the GaN single-crystal substrate (52) without providing a GaN-ELO structure layer. The GaN single-crystal substrate (52) has continuous belt-shaped core portions (52a) each having a width of 10 μm. These core portions (52a) are spaced apart from each other by a distance of about 400 μm. A laser stripe (30), a pad metal (37) for the p-side electrode (36), and the n-side electrode (38) are provided on the multilayer structure in a region except the core portions (52a) of the GaN single-crystal substrate (52). The horizontal distance Sp between the pad metal (37) and the core portion (52a) adjacent thereto is 95 μm, and the horizontal distance Sn between the n-side electrode (38) and the core portion (52a) adjacent thereto is also 95 μm.

    摘要翻译： 提供了一种形成在GaN单晶衬底上并具有能够减少电流泄漏的构造的GaN基半导体发光器件。 作为GaN系半导体发光元件的一例，公开了GaN系半导体激光元件（50），是具有p侧电极和n侧电极的结构的半导体激光元件 在GaN基化合物半导体层的多层结构上。 GaN基半导体激光器件（50）的结构与形成在蓝宝石衬底上的常规GaN基半导体激光器器件相似，除了使用GaN单晶衬底（52）代替蓝宝石衬底，并且 多层结构直接形成在GaN单晶衬底（52）上，而不提供GaN-ELO结构层。 GaN单晶衬底（52）具有宽度为10μm的连续的带状芯部（52a）。 这些芯部分（52a）彼此隔开约400μm的距离。 激光条纹（30），用于p侧电极（36）的焊盘金属（37）和n侧电极（38）设置在除了芯部（52a）的芯部 GaN单晶衬底（52）。 焊垫金属（37）与与其相邻的芯部（52a）之间的水平距离Sp为95μm，n侧电极（38）与与其相邻的芯部（52a）之间的水平距离Sn为 也是95妈妈。

    Cutting insert and rotary cutting tool
    5.
    发明授权
    Cutting insert and rotary cutting tool 有权
    切削刀片和旋转切削刀具

    公开(公告)号：US09457413B2

    公开(公告)日：2016-10-04

    申请号：US13739766

    申请日：2013-01-11

    申请人： Osamu Matsumoto ,  Souzou Kawasaki

    发明人： Osamu Matsumoto ,  Souzou Kawasaki

    IPC分类号： B23C5/08 ,  B23C5/20

    CPC分类号： B23C5/207 ,  B23C5/08 ,  B23C5/205 ,  B23C2200/0466 ,  B23C2200/085 ,  B23C2200/367 ,  B23C2210/168 ,  B23C2210/66 ,  B23C2220/36 ,  Y10T407/1906 ,  Y10T407/1942 ,  Y10T407/235

    摘要： A cutting insert includes an insert body portion and a plurality of projecting portions provided integrally with the insert body portion. The projecting portion includes a cutting edge and includes projecting portion upper and lower surfaces, two projecting portion side surfaces, and a projecting portion side end surface extending therebetween. In the projecting portion, a round corner surface extends between the projecting portion upper surface and the projecting portion side end surface. The cutting edge is formed so as to include a corner formed along an edge of the round corner surface and such that the projecting portion side surface serves as a rake face. The projecting portion is designed such that a length between the two projecting portion side surfaces is smaller than a diameter of an inscribed circle defined on the insert body portion.

    摘要翻译： 切削刀片包括插入件主体部分和与插入件主体部分整体设置的多个突出部分。 突出部分包括切割边缘，并且包括突出部分上表面和下表面，两个突出部分侧表面和在它们之间延伸的突出部分侧端面。 在突出部中，圆角部在突出部上表面与突出部侧端面之间延伸。 切削刃形成为包括沿着圆角的边缘形成的角部，并且突出部侧面用作前刀面。 突出部被设计成使得两个突出部侧表面之间的长度小于限定在插入物主体部分上的内接圆的直径。

    Current driven D/A converter and its bias circuit
    6.
    发明申请
    Current driven D/A converter and its bias circuit 审中-公开
    电流驱动D / A转换器及其偏置电路

    公开(公告)号：US20080024340A1

    公开(公告)日：2008-01-31

    申请号：US11902773

    申请日：2007-09-25

    申请人： Osamu Matsumoto ,  Takahiro Miki ,  Yasuo Morimoto

    发明人： Osamu Matsumoto ,  Takahiro Miki ,  Yasuo Morimoto

    IPC分类号： H03M1/66

    CPC分类号： H03M1/0604 ,  H03M1/742

    摘要： A current driven D/A converter sets an OFF control voltage (BIAS3) for turning off NMOS transistors M12P, M12N, M22P, M22N, M32P and M32N at a voltage close to an ON control voltage (BIAS2). This makes it possible to reduce the swing of the control voltage (ON control voltage−OFF control voltage) of the NMOS transistors, and hence to reduce the noise due to charge injections through parasitic capacitances, and noise of a ground voltage or power supply voltage due to flowing of discharge currents from the parasitic capacitances to the ground or power supply at turn off of the transistors, thereby being able to offer a high performance current driven D/A converter.

    摘要翻译： 电流驱动D / A转换器设置用于关闭NMOS晶体管M 12 P，M 12 N，M 22 P，M 22 N，M 32 P和M 32 N的截止控制电压（BIAS 3） ON控制电压（BIAS 2）。 这使得可以减小NMOS晶体管的控制电压（ON控制电压 - 关闭控制电压）的摆动，从而减少由于通过寄生电容的电荷注入引起的噪声，以及接地电压或电源电压的噪声 由于在晶体管截止时由寄生电容放电到地或电源的放电电流的流动，从而能够提供高性能的电流驱动D / A转换器。

    Fuel injection system
    9.
    发明授权
    Fuel injection system 有权
    燃油喷射系统

    公开(公告)号：US06453876B1

    公开(公告)日：2002-09-24

    申请号：US09685136

    申请日：2000-10-11

    申请人： Norihisa Fukutomi ,  Osamu Matsumoto ,  Masayuki Aota

    发明人： Norihisa Fukutomi ,  Osamu Matsumoto ,  Masayuki Aota

    IPC分类号： F02M5100

    CPC分类号： F02D41/20 ,  F02D2041/2037

    摘要： The fuel injection system includes an injector 7 to be electromagnetically driven, a control device 2 for outputting a drive signal having first current-carrying time T1 and second current-carrying time T2 to this injector 7, and a drive device 6 for passing a large current to open a valve of the injector 7 during the first current-carrying time T1 and passing a small current to hold the injector 7 in a valve opening state during the second current-carrying time T2. The system is constructed so that the first current-carrying time T1 is set to the time shorter than valve opening required time T0 from a current-carrying start of the injector 7 to full opening and this time difference is set to the value shorter than valve closing operation delay time from a current break of the injector 7 in the case of breaking a current in the first current-carrying time T1 to a start of a valve closing operation.

    摘要翻译： 燃料喷射系统包括要被电磁驱动的喷射器7，用于向该喷射器7输出具有第一载流时间T1和第二载流时间T2的驱动信号的控制装置2和用于使大型 电流在第一载流时间T1期间打开喷射器7的阀，并且在第二载流时间T2期间通过小电流以将喷射器7保持在阀打开状态。 该系统构造成使得第一通电时间T1被设定为比从喷射器7的通电开始到全开的阀开启所需时间T0更短的时间，并且该时间差设定为比阀短 在将第一通电时间T1中的电流断开至闭阀动作开始的情况下，从喷射器7的当前中断开始关闭运转延迟时间。

    Pipeline type A/D converter
    10.
    发明授权
    Pipeline type A/D converter 失效
    管道式A / D转换器

    公开(公告)号：US5821893A

    公开(公告)日：1998-10-13

    申请号：US740520

    申请日：1996-10-30

    申请人： Toshio Kumamoto ,  Osamu Matsumoto

    发明人： Toshio Kumamoto ,  Osamu Matsumoto

    IPC分类号： H03M1/14 ,  H03M1/06 ,  H03M1/16 ,  H03M1/38

    CPC分类号： H03M1/0695 ,  H03M1/167

    摘要： In a pipeline type A/D converter, a switch for sampling an analog potential signal has its other terminal in connection with an A/D converter, a D/A converter, a capacitor for subtraction. Even when frequency of the analog potential signal is raised such that input current is increased and a voltage drop is increased at the switch, there will be no error in the result of subtraction like in the conventional example where analog potential signal was directly input to A/D converter. Accordingly, a pipeline type A/D converter with low power dissipation and satisfactory frequency characteristics is obtained.

    摘要翻译： 在流水线型A / D转换器中，用于对模拟电位信号采样的开关具有与A / D转换器，D / A转换器，用于减法的电容器相连的另一端。 即使在模拟电位信号的频率升高使得输入电流增加并且在开关处电压降增加的情况下，与在将模拟电位信号直接输入到A的常规示例中一样，减法结果将不会有误差 / D转换器。 因此，获得具有低功耗和令人满意的频率特性的流水线型A / D转换器。