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    Nitride-based semiconductor laser device and method for the production thereof
    1.
    发明授权
    Nitride-based semiconductor laser device and method for the production thereof 有权
    氮化物半导体激光器件及其制造方法

    公开(公告)号：US06784010B2

    公开(公告)日：2004-08-31

    申请号：US10275497

    申请日：2002-11-06

    申请人： Takashi Yamaguchi ,  Takashi Kobayashi ,  Toshimasa Kobayashi ,  Satoru Kijima ,  Satoshi Tomioka ,  Shinichi Ansai ,  Tsuyoshi Tojo

    发明人： Takashi Yamaguchi ,  Takashi Kobayashi ,  Toshimasa Kobayashi ,  Satoru Kijima ,  Satoshi Tomioka ,  Shinichi Ansai ,  Tsuyoshi Tojo

    IPC分类号： H01L2100

    CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/222 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/3072 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

    摘要： The nitride-based semiconductor laser device 10 has a stacked structure comprising a first contacting layer 14, a first cladding layer 16, an active layer 20, a second cladding layer 24, a second contacting layer 26 and a second electrode 30 which are consecutively stacked, the second cladding layer 24 comprises a lower layer 24A and an upper layer 24B, the first cladding layer 14, the active layer 20 and the lower layer 24A of the second cladding layer have a mesa structure, the upper layer 24B of the second cladding layer and the second contacting layer 26 have a ridge structure, an insulating layer 40 covering at least part of each of both side surfaces of the upper layer 24B of the second cladding layer is formed on the portions of the lower layer 24A of the second cladding layer which portions correspond to the top surface of the mesa structure, and further, a metal layer 42 having substantially the same width as the mesa structure is formed on the top surface of the insulating layer 40 and the top surface of the second electrode 30 such that the metal layer 42 continues from one top surface to the other.

    摘要翻译： 氮化物系半导体激光装置10具有包括第一接触层14，第一包层16，有源层20，第二包覆层24，第二接触层26和第二电极30的层叠结构， 第二包覆层24包括下层24A和上层24B，第二包覆层的第一包层14，有源层20和下层24A具有台面结构，第二包层的上层24B 层和第二接触层26具有脊状结构，在第二包层的下层24A的部分上形成有覆盖第二包层的上层24B的两个侧面的至少一部分的至少一部分的绝缘层40 层，这些部分对应于台面结构的顶表面，此外，具有与台面结构基本相同的宽度的金属层42形成在绝缘层1a的顶表面上 yer 40和第二电极30的顶表面，使得金属层42从一个顶表面延伸到另一个顶表面。

    Nitride semiconductor device and method of manufacturing the same
    5.
    发明申请
    Nitride semiconductor device and method of manufacturing the same 审中-公开
    氮化物半导体器件及其制造方法

    公开(公告)号：US20050184302A1

    公开(公告)日：2005-08-25

    申请号：US11112295

    申请日：2005-04-22

    申请人： Toshimasa Kobayashi ,  Katsunori Yanashima ,  Takashi Yamaguchi ,  Hiroshi Nakajima

    发明人： Toshimasa Kobayashi ,  Katsunori Yanashima ,  Takashi Yamaguchi ,  Hiroshi Nakajima

    IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L29/20 ,  H01L33/00 ,  H01M2/02 ,  H01M4/02 ,  H01M4/48 ,  H01M4/52 ,  H01M4/62 ,  H01M6/10 ,  H01M6/16 ,  H01M10/40 ,  H01M10/42 ,  H01L29/221

    CPC分类号： C30B25/04 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L29/2003 ,  H01L29/66522 ,  H01L33/007

    摘要： Provided is a nitride semiconductor device with high reliability and high flexibility in design and manufacture of the device. The nitride semiconductor device comprises a seed crystal portion (11) formed on a sapphire substrate (10) and having a mask (12) on one side surface thereof, and a GaN layer (15) grown on the sapphire substrate (10) and the seed crystal portion (11) through epitaxial lateral overgrowth. The GaN layer (15) is grown only from an exposed side surface of the seed crystal portion (11) which is not covered with the mask (12), so the lateral growth of the GaN layer (15) is asymmetrically carried out. Thereby, a meeting portion (32) is formed in the vicinity of a boundary between the seed crystal portion (11) and the mask (12) in a thickness direction of the GaN layer (15). Therefore, as the meeting portion (32) is formed in a position away from the center between the adjacent seed crystal portions (11) in a direction parallel to a surface of the substrate, a width WL of a lateral growth region is larger with respect to a pitch WP of the seed crystal potion (11), compared with conventional configurations.

    摘要翻译： 提供了一种在设备的设计和制造中具有高可靠性和高灵活性的氮化物半导体器件。 氮化物半导体器件包括在蓝宝石衬底（10）上形成并在其一个侧表面上具有掩模（12）的晶种部分（11）和在蓝宝石衬底（10）上生长的GaN层（15）和 籽晶部分（11）通过外延横向过度生长。 GaN层（15）仅从没有被掩模（12）覆盖的晶种部分（11）的暴露的侧表面生长，所以GaN层（15）的横向生长被不对称地进行。 由此，在GaN层（15）的厚度方向上，在晶种部分（11）和掩模（12）之间的边界附近形成会聚部分（32）。 因此，由于会聚部32形成在与基板的表面平行的方向上离开相邻的晶种部11之间的中心的位置，所以宽度W L是 与常规构造相比，晶种部分（11）的横向生长区域相对于间距W P P较大。

    Voltage conversion apparatus
    6.
    发明授权
    Voltage conversion apparatus 有权

    公开(公告)号：US09762116B2

    公开(公告)日：2017-09-12

    申请号：US15041515

    申请日：2016-02-11

    申请人： Takashi Yamaguchi ,  Akihiro Kinoshita ,  Shinji Horio

    发明人： Takashi Yamaguchi ,  Akihiro Kinoshita ,  Shinji Horio

    IPC分类号： H02M1/32 ,  H02M3/156 ,  H02M1/00

    CPC分类号： H02M1/32 ,  H02M3/156 ,  H02M2001/0048 ,  Y02B70/1491

    摘要： A voltage conversion apparatus includes a booster circuit, a boost stop circuit, a Zener diode, and a capacitor. The boost stop circuit includes a transistor. When an overvoltage equal to or larger than a breakdown voltage of the Zener diode is output to an output line of the booster circuit, the Zener diode is turned on. Accordingly, the transistor is turned on and a switching element is turned off to stop a boost operation. Further, the capacitor is charged through the Zener diode. Even when the Zener diode is turned off due to a drop in the output voltage after the stop of the boost operation, the transistor maintains its on state for a certain time by discharge of the capacitor. Thus, the stop of the boost operation is continued.

    Optical connector
    7.
    发明授权
    Optical connector 有权
    光连接器

    公开(公告)号：US09164245B2

    公开(公告)日：2015-10-20

    申请号：US13454611

    申请日：2012-04-24

    申请人： Takashi Yamaguchi ,  Kazuhiro Takizawa

    发明人： Takashi Yamaguchi ,  Kazuhiro Takizawa

    IPC分类号： G02B6/255 ,  G02B6/38

    CPC分类号： G02B6/3858 ,  G02B6/255 ,  G02B6/2555 ,  G02B6/2558 ,  G02B6/3846

    摘要： The present invention relates to an optical connector including, a ferrule within which an integrated optical fiber is fixed, a clamp portion disposed at a rear of the ferrule, the clamp portion comprising: a base component and a lid component facing the based component, where the base component and the lid component together are configured to clamp an end portion of the integrated optical fiber and an end portion of a naked optical fiber abutting the end portion of the integrated optical fiber, and a naked optical fiber guide portion disposed at a rear of the clamp portion, where the naked optical fiber guide portion comprises a through hole through which the naked optical fiber can be inserted, and that guides the naked optical fiber to the clamp portion by the through hole.

    摘要翻译： 光连接器技术领域本发明涉及一种光连接器，其包括固定有集成光纤的套圈，设置在套圈后部的夹持部，所述夹持部包括：基部部件和面向所述基部部件的盖部件， 基部部件和盖部件一起构成为夹持集成光纤的端部和与该集成光纤的端部抵接的裸光纤的端部，以及设置在后方的裸光纤引导部 其中裸光纤引导部分包括可以插入裸光纤的通孔，并且通过通孔将裸光纤引导到夹持部分。

    GT-cut quartz crystal resonator
    8.
    发明授权
    GT-cut quartz crystal resonator 有权
    GT切割石英晶体谐振器

    公开(公告)号：US08957569B2

    公开(公告)日：2015-02-17

    申请号：US13372373

    申请日：2012-02-13

    申请人： Takashi Yamaguchi ,  Hiroaki Yamada

    发明人： Takashi Yamaguchi ,  Hiroaki Yamada

    IPC分类号： H01L41/053 ,  H01L41/09

    CPC分类号： H03H9/02023 ,  H03H9/02157 ,  H03H9/0595 ,  H03H9/132 ,  H03H9/205 ,  H03H9/2436

    摘要： A GT-cut crystal resonator that can be provided with a support portion having a small and simple configuration without adverse effect on vibration characteristics includes: a crystal plate formed in an elliptical shape with a major axis and a minor axis respectively corresponding to vibration directions of two longitudinal vibration modes orthogonal to each other in a GT-cut; and a support portion that supports the crystal plate, the support portion being connected to a position on an outer periphery of the crystal plate where a minimum vibration displacement is obtained when the two longitudinal vibration modes are coupled.

    摘要翻译： 可以设置有具有小而简单构造而不对振动特性产生不利影响的支撑部分的GT切割晶体谐振器包括：形成为椭圆形的晶体板，其长轴和短轴分别对应于振动方向 在GT切割中彼此正交的两个纵向振动模式; 以及支撑所述晶体板的支撑部，所述支撑部连接到当所述两个纵向振动模式耦合时获得最小振动位移的所述晶体板的外周上的位置。

    Electrical power control device and electrical power calculation method in electrical power control device
    9.
    发明授权
    Electrical power control device and electrical power calculation method in electrical power control device 有权
    电力控制装置中的电力控制装置和电力计算方法

    公开(公告)号：US08855953B2

    公开(公告)日：2014-10-07

    申请号：US13382687

    申请日：2010-07-08

    申请人： Takashi Yamaguchi ,  Yugo Tadano ,  Toru Kakebayashi

    发明人： Takashi Yamaguchi ,  Yugo Tadano ,  Toru Kakebayashi

    IPC分类号： G01R21/00 ,  H02M7/48 ,  G01R21/06 ,  H02M1/00

    CPC分类号： H02M7/48 ,  H02M2001/007

    摘要： A motor drive device including a battery 10; switching elements 15 and 16 which are connected in series with a condenser C2 having a voltage Vdc resulting from an increase action of battery voltage and which are operated in a chopper control; a reactor L2 whose one end is connected with a common connection point of the switching elements 15 and 16; and an inverter 19 for driving a PM motor 20 which is connected between another end of the reactor L2 and a negative-pole terminal of the battery 10. In such a motor drive device, an electrical power W is determined based on the voltage Vdc of positive-side point P of the condenser C2, a current Idc flowing in the reactor L2, and a switching duty d1 of the switching element 15 which satisfies a condition of 0≦d1≦1, i.e., is determined by calculating Vdc·d1·Idc.

    摘要翻译： 一种电动机驱动装置，包括电池10; 开关元件15和16与电容器C2串联连接，该电容器C2具有由电池电压的增加作用引起的电压Vdc，并在斩波器控制中操作; 反应器L2的一端与开关元件15,16的公共连接点连接; 以及用于驱动连接在电抗器L2的另一端和电池10的负极端子之间的PM电动机20的逆变器19.在这种电动机驱动装置中，根据电动机的电压Vdc 冷凝器C2的正侧点P，电抗器L2中流过的电流Idc，以及开关元件15的开关占空比d1满足条件0＆nlE; d1＆nlE; 1，即，通过计算Vdc·d1· Idc。

    CONDUCTIVE RESIN COMPOSITION AND CURED PRODUCT THEREOF
    10.
    发明申请
    CONDUCTIVE RESIN COMPOSITION AND CURED PRODUCT THEREOF 有权
    导电树脂组合物及其固化产品

    公开(公告)号：US20140243453A1

    公开(公告)日：2014-08-28

    申请号：US14342864

    申请日：2012-09-04

    申请人： Noritsuka Mizumura ,  Takashi Yamaguchi ,  Yoko Nagara

    发明人： Noritsuka Mizumura ,  Takashi Yamaguchi ,  Yoko Nagara

    IPC分类号： C08L63/00

    CPC分类号： C08L63/00 ,  C08G59/621 ,  C08K3/08 ,  C08K2201/001 ,  C08L63/10 ,  C08L2205/05 ,  C08L33/068 ,  C08L61/04

    摘要： A conductive resin composition which includes an epoxy resin (A), a compound (B) having a (meth)acryloyl group and a glycidyl group, a phenolic resin curing agent (C), a radical polymerization initiator (D) and a conductive particle (E). The conductive resin composition which may be B-staged (semi-cured) at a relatively low temperature to exhibit sufficient tack-free properties and excellent pressure-sensitive tackiness. This permits temporary bonding of parts without involving solvent evaporation or light illumination, thereby reducing or avoiding an increase in facility costs. The conductive resin composition may thereafter be cured (C-staged) to provide a cured product having a desirable bond strength, while maintaining a low specific resistivity.

    摘要翻译： 包含环氧树脂（A），具有（甲基）丙烯酰基和缩水甘油基的化合物（B），酚醛树脂固化剂（C），自由基聚合引发剂（D）和导电颗粒 （E）。 导电性树脂组合物可以在比较低的温度下进行B阶（半固化），以显示出足够的无粘性和优异的压敏粘合性。 这允许临时粘合部件而不涉及溶剂蒸发或光照射，从而减少或避免设备成本的增加。 此后，导电性树脂组合物可以固化（C阶段），以提供具有所需粘合强度的固化产物，同时保持低电阻率。