公开(公告)号：US07415985B2

公开(公告)日：2008-08-26

申请号：US10947712

申请日：2004-09-23

申请人： Shuzo Nagami

发明人： Shuzo Nagami

IPC分类号： B08B3/02

CPC分类号： B08B3/04 ,  B08B3/048 ,  Y10S134/902

摘要： A substrate cleaning and drying apparatus for performing drying treatment after cleaning treatment of substrates. The apparatus includes a treating tank for storing a treating liquid, and performing the cleaning treatment of the substrates immersed in the treating liquid, a treating chamber housing the treating tank, and having an opening formed in an upper position of the treating chamber for allowing passage of the substrates into and out of the treating chamber, a lid member movable to open and close the opening of the treating chamber, and a holding mechanism for holding the substrates within the treating tank, the holding mechanism having suction bores. After the cleaning treatment of the substrates with the treating liquid in the treating tank, a gas is supplied toward the substrates, with the lid member closed, while suction is effected through the suction bores of the holding mechanism.

摘要翻译： 一种用于在清洁处理基板之后进行干燥处理的基板清洁和干燥装置。 该设备包括一个用于储存处理液的处理槽，并且对浸入处理液中的基板进行清洗处理，容纳处理槽的处理室，并且在处理室的上部位置形成有允许通过的开口 的基板进出处理室，可移动以打开和关闭处理室的开口的盖构件和用于将基板保持在处理槽内的保持机构，该保持机构具有抽吸孔。 在用处理槽中的处理液对基板进行清洁处理之后，通过保持机构的抽吸孔进行抽吸，将盖子关闭，向基板供给气体。

公开(公告)号：US20050274401A1

公开(公告)日：2005-12-15

申请号：US10693165

申请日：2003-10-24

申请人： Shuzo Nagami ,  Hidehiko Ozaki

发明人： Shuzo Nagami ,  Hidehiko Ozaki

IPC分类号： H01L21/306 ,  B08B3/00 ,  B08B7/04 ,  H01L21/00 ,  H01L21/027 ,  H01L21/304

CPC分类号： H01L21/67034 ,  H01L21/67028

摘要： A substrate processing apparatus for drying a substrate comprises a chamber, a vapor supply part, an open/close valve, and a controller. While the chamber is hermetically sealed, a substrate is cleaned by pure water. Water vapor of high temperature and pressure is thereafter supplied from the vapor supply part, to realize rise in temperature and pressure in the chamber. At the time when the substrate surface is covered with pure water at a temperature of 100 degrees centigrade or higher, the controller brings the open/close valve to an open state to release an atmosphere in the chamber in the atmosphere, thereby instantaneously bringing the chamber to a condition of reduced pressure. As a result, water mark formation is suppressed in a drying process of a processing solution adhered to the substrate.

摘要翻译： 用于干燥基板的基板处理装置包括室，蒸气供应部，开/关阀和控制器。 当室被气密密封时，用纯水清洗基板。 然后从蒸气供给部供给高温高压水蒸汽，实现室内的温度和压力的升高。 当基板表面在100℃或更高的温度下用纯水覆盖时，控制器将打开/关闭阀打开或关闭，以释放大气中的室中的气氛，从而瞬间使室 达到减压的条件。 结果，在附着于基板的处理液的干燥工序中，抑制了水痕的形成。

公开(公告)号：US20050236018A1

公开(公告)日：2005-10-27

申请号：US11106313

申请日：2005-04-14

申请人： Shuzo Nagami

发明人： Shuzo Nagami

IPC分类号： H01L21/304 ,  B08B3/00 ,  B08B3/02 ,  H01L21/00 ,  H01L21/02

CPC分类号： H01L21/02052 ,  B08B3/02 ,  B08B2230/01 ,  H01L21/67028 ,  H01L21/67051

摘要： A substrate treating method for performing a predetermined treatment of substrates. The method includes a step of performing chemical treatment of the substrates with a chemical, and a step of performing deionized water cleaning treatment of the substrates with superheated steam obtained by heating deionized water.

摘要翻译： 一种用于对衬底进行预定处理的衬底处理方法。 该方法包括用化学品对基材进行化学处理的步骤，以及通过加热去离子水进行过热蒸汽对基材进行去离子水清洗处理的步骤。

公开(公告)号：US20080210261A1

公开(公告)日：2008-09-04

申请号：US12118115

申请日：2008-05-09

申请人： Shuzo NAGAMI ,  Hidehiko OZAKI

发明人： Shuzo NAGAMI ,  Hidehiko OZAKI

IPC分类号： F26B7/00 ,  B08B3/04

CPC分类号： H01L21/67034 ,  H01L21/67028

摘要： A substrate processing apparatus for drying a substrate including a chamber, a vapor supply part, an open/close valve, and a controller, is disclosed. While the chamber is hermetically sealed, a substrate is cleaned by pure water. Water vapor of high temperature and pressure is thereafter supplied from the vapor supply part, to raise the temperature and pressure in the chamber. When the substrate surface is covered with pure water at a temperature of 100 degrees centigrade or higher, the controller brings the open/close valve to an open state to release the ambient atmosphere in the chamber in the atmosphere outside, thereby instantaneously bringing the chamber to a condition of reduced pressure. As a result, water mark formation caused by processing solution adhering to the substrate is suppressed in the drying process.

摘要翻译： 公开了一种用于干燥包括腔室，蒸气供应部件，打开/关闭阀门和控制器的基板的基板处理设备。 当室被气密密封时，用纯水清洗基板。 然后从蒸气供给部供给高温高压水蒸汽，提高室内的温度和压力。 当基板表面在100摄氏度或更高的温度下用纯净水覆盖时，控制器将打开/关闭阀打开至关闭状态，以释放外部空气中室内的环境气氛，从而将腔室瞬间 减压的条件 结果，在干燥过程中抑制了由附着在基板上的处理液引起的水痕形成。

公开(公告)号：US20060137726A1

公开(公告)日：2006-06-29

申请号：US11316238

申请日：2005-12-21

申请人： Kenichi Sano ,  Shuzo Nagami ,  Ichiro Mitsuyoshi ,  Takiyoshi Sakai

发明人： Kenichi Sano ,  Shuzo Nagami ,  Ichiro Mitsuyoshi ,  Takiyoshi Sakai

IPC分类号： B08B3/00 ,  B05C11/00

CPC分类号： G03F7/7075 ,  H01L21/67028 ,  H01L21/67173 ,  H01L21/67757 ,  H01L21/67766 ,  H01L21/67769 ,  H01L21/67772

摘要： A substrate treating apparatus includes a storage block for accommodating foups each storing a plurality of substrates, a first treating block for treating a plurality of substrates en bloc, a second treating block for treating one substrate at a time, and a transport device for transporting the substrates between the foups, first treating block and second treating block. The substrates may be treated in a mode of treating a plurality of substrates en bloc, and/or a mode of treating one substrate at a time.

摘要翻译： 一种基板处理装置，具备容纳多个基板的收纳容器的储存块，一体地处理多个基板的第一处理块，一次处理一个基板的第二处理块，以及运送装置 在第一处理块和第二处理块之间的基材。 可以以整体处理多个基板的方式和/或一次处理一个基板的模式来处理基板。

公开(公告)号：US20050056307A1

公开(公告)日：2005-03-17

申请号：US10947712

申请日：2004-09-23

申请人： Shuzo Nagami

发明人： Shuzo Nagami

IPC分类号： B08B3/00 ,  B08B3/04

CPC分类号： B08B3/04 ,  B08B3/048 ,  Y10S134/902

摘要： A substrate cleaning and drying apparatus for performing drying treatment after cleaning treatment of substrates. The apparatus includes a treating tank for storing a treating liquid, and performing the cleaning treatment of the substrates immersed in the treating liquid, a treating chamber housing the treating tank, and having an opening formed in an upper position of the treating chamber for allowing passage of the substrates into and out of the treating chamber, a lid member movable to open and close the opening of the treating chamber, and a holding mechanism for holding the substrates within the treating tank, the holding mechanism having suction bores. After the cleaning treatment of the substrates with the treating liquid in the treating tank, a gas is supplied toward the substrates, with the lid member closed, while suction is effected through the suction bores of the holding mechanism.

摘要翻译： 一种用于在清洁处理基板之后进行干燥处理的基板清洁和干燥装置。 该设备包括一个用于储存处理液的处理槽，并且对浸入处理液中的基板进行清洗处理，容纳处理槽的处理室，并且在处理室的上部位置形成有允许通过的开口 的基板进出处理室，可移动以打开和关闭处理室的开口的盖构件和用于将基板保持在处理槽内的保持机构，该保持机构具有抽吸孔。 在用处理槽中的处理液对基板进行清洁处理之后，通过保持机构的抽吸孔进行抽吸，将盖子关闭，向基板供给气体。

公开(公告)号：US20060130880A1

公开(公告)日：2006-06-22

申请号：US11299605

申请日：2005-12-12

申请人： Shuzo Nagami

发明人： Shuzo Nagami

IPC分类号： B08B3/00

CPC分类号： B08B3/08 ,  B08B3/048 ,  H01L21/02052 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67057

摘要： A mixer produces a treating solution by mixing chloride into hot deionized water heated by a hot water unit. The treating solution produced is supplied to a treating tank through a treating solution pipe and a common pipe. In the treating tank, substrates held by a lifter are immersed in the treating solution. Subsequently, the lifter is raised to pull the substrates up from the treating solution. Since the droplets adhering to the substrates are acid, an oxidation reaction of the substrates is inhibited. That is, when the substrates dry, an oxide does not deposit on the substrates, thereby preventing formation of watermarks.

摘要翻译： 混合器通过将氯化物混合到由热水单元加热的热去离子水中产生处理溶液。 所生产的处理溶液通过处理溶液管道和普通管道供给到处理槽。 在处理槽中，由提升器保持的基板浸入处理溶液中。 随后，提升升降器以将处理溶液向上拉。 由于附着在基板上的液滴是酸的，所以抑制了基板的氧化反应。 也就是说，当基板干燥时，氧化物不会沉积在基板上，从而防止水印的形成。

公开(公告)号：US20060112973A1

公开(公告)日：2006-06-01

申请号：US11284716

申请日：2005-11-22

申请人： Shuzo Nagami

发明人： Shuzo Nagami

IPC分类号： B08B3/00

CPC分类号： H01L21/02052 ,  C03C23/0075 ,  H01L21/67028 ,  H01L21/67034

摘要： A substrate processing apparatus admits nitrogen gas into a casing, while immersing a substrate in deionized water stored in a processing tank. Oxygen and water vapor within the casing are replaced with nitrogen gas and then removed. Subsequently, the substrate processing apparatus supplies IPA vapor toward substrates, while lifting the substrates from deionized water. Since IPA vapor is blown directly on the substrates, IPA condenses efficiently on the surfaces of the substrates. Therefore, if the concentration of IPA vapor is lowered, there is no fear of the drying performance of the substrates from deteriorating. Additionally, lowering the concentration of IPA vapor can prevent dissolution of a resist film formed on the surfaces of the substrates.

摘要翻译： 基板处理装置将氮气浸入到壳体中，同时将基板浸入存储在处理槽中的去离子水中。 套管内的氧气和水蒸气被氮气置换，然后取出。 随后，基板处理装置在从去离子水提起基板的同时向基板供给IPA蒸气。 由于IPA蒸气直接吹在基板上，因此IPA在基板的表面上有效地冷凝。 因此，如果IPA蒸气的浓度降低，则不用担心基板的干燥性能劣化。 此外，降低IPA蒸汽的浓度可以防止形成在基板表面上的抗蚀剂膜的溶解。

公开(公告)号：US06941956B2

公开(公告)日：2005-09-13

申请号：US10382611

申请日：2003-03-05

申请人： Atsushi Osawa ,  Masato Tanaka ,  Shuzo Nagami

发明人： Atsushi Osawa ,  Masato Tanaka ,  Shuzo Nagami

IPC分类号： B08B3/08 ,  H01L21/00 ,  H01L21/28 ,  H01L21/311 ,  H01L21/316 ,  H01L21/302 ,  H01L21/461 ,  B05C11/02 ,  B05C13/02

CPC分类号： H01L21/67086 ,  B08B3/08 ,  H01L21/02126 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/28123 ,  H01L21/31111 ,  H01L21/31604 ,  H01L21/31625 ,  H01L21/31691 ,  Y10S134/902

摘要： A substrate treating method for treating substrates with a treating solution includes a step of heating a treating solution containing sulfuric acid, and treating, with the treating solution, the substrates coated with a film material including a high dielectric-constant material. The substrates with the high dielectric-constant material are treated appropriately by heating, before use, the treating solution containing sulfuric acid.

摘要翻译： 用处理溶液处理基材的基板处理方法包括加热含有硫酸的处理溶液的步骤，并且用处理溶液处理涂覆有包含高介电常数材料的薄膜材料的基材。 具有高介电常数材料的基板在使用前通过加热处理含有硫酸的处理溶液来适当地处理。

公开(公告)号：US06902677B2

公开(公告)日：2005-06-07

申请号：US10668551

申请日：2003-09-22

申请人： Shuzo Nagami

发明人： Shuzo Nagami

IPC分类号： C02F1/461 ,  B03C1/00 ,  C02F1/467 ,  C02F1/72 ,  C25C1/12 ,  H01L21/304

CPC分类号： C02F1/4678 ,  C02F1/46176 ,  C02F1/72 ,  C02F2001/46152 ,  C02F2001/46157 ,  C02F2101/20 ,  C02F2201/46125

摘要： A method of removing a metal ion from a treating liquid for use in treating a substrate comprises the steps of: applying a first voltage via an electrode to the treating liquid that flows in a supply piping so that deposition can occur; and applying a second voltage higher than the first voltage to the electrode while distributing a cleaning liquid to the supply piping, so that ionization can occur.

摘要翻译： 从用于处理基板的处理液中除去金属离子的方法包括以下步骤：通过电极将第一电压施加到在供给管道中流动的处理液体，从而发生沉积; 以及将高于第一电压的第二电压施加到电极，同时将清洁液体分配到供应管道，使得可能发生电离。