公开(公告)号：US20110020641A1

公开(公告)日：2011-01-27

申请号：US12935135

申请日：2008-07-07

Applicant: Pradip Hiralal Shroff ,  Ashok Biswas ,  Somnath Bhattacharya

Inventor： Pradip Hiralal Shroff ,  Ashok Biswas ,  Somnath Bhattacharya

IPC: B32B7/12

CPC classification number: B31D1/0062 ,  G09F3/0292 ,  Y10T428/2848

Abstract: A tamper resistant security sealing tape comprising four or more layers and the method of manufacturing the same. The said tape once stuck properly can not be removed and flakes in bits and pieces. The tape has a fragile base substrate which is a cast polymeric film, a layer of pressure sensitive adhesive on one side of the base substrate, a polymeric film strip which is partially laminated on the other side of the base substrate using pressure sensitive adhesive, a release liner protecting the base substrate adhesive, and optionally an indicia or logo printed on the said polymeric strip. The base substrate is of very low breaking strength and pressure sensitive adhesive is of very high tack and peel strength even on low energy surfaces and at low temperatures. The tape softens and melts at high temperatures and dissolves and gives tacky solution when in contact with solvents.

Abstract translation: 包括四层或更多层的防篡改安全密封带及其制造方法。 所述磁带一旦正确卡住就不能被去除，并且碎片碎片。 胶带具有易碎基材，其为铸塑聚合物膜，在基底基材一侧上的压敏粘合剂层，使用压敏粘合剂部分层压在基底基材的另一侧上的聚合物膜条， 保护底部基底粘合剂的释放衬垫，以及可选地印在所述聚合物条上的标记或徽标。 基础基材具有非常低的断裂强度，并且压敏粘合剂即使在低能量表面和低温下也具有非常高的粘性和剥离强度。 胶带在高温下软化和熔融并溶解并在与溶剂接触时产生粘性溶液。

公开(公告)号：US4434434A

公开(公告)日：1984-02-28

申请号：US249261

申请日：1981-03-30

Applicant: Somnath Bhattacharya ,  Shih-Ming Hu ,  Nicholas G. Koopman ,  Chester C. Oldakowski

Inventor： Somnath Bhattacharya ,  Shih-Ming Hu ,  Nicholas G. Koopman ,  Chester C. Oldakowski

IPC: H01L21/60 ,  H01L23/485 ,  H01L23/532 ,  H01L23/48 ,  H01L29/44 ,  H01L29/52 ,  H01L29/62

CPC classification number: H01L24/10 ,  H01L23/53209 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14

Abstract: A controlled geometric configuration of contact pads for securing solder mounds to an integrated circuit chip which reduces cracking of brittle passivating coatings in fabrication of components.

Abstract translation: 用于将焊接块固定到集成电路芯片的接触焊盘的受控几何构型，其减少部件制造中脆性钝化涂层的开裂。

公开(公告)号：US4514751A

公开(公告)日：1985-04-30

申请号：US452542

申请日：1982-12-23

Applicant: Somnath Bhattacharya

Inventor： Somnath Bhattacharya

IPC: H01L21/60 ,  B23K35/00 ,  H01L23/485 ,  H01L23/532 ,  H01L23/48 ,  H01L29/46

CPC classification number: H01L23/532 ,  B23K35/001 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01061 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14

Abstract: Contact metallurgy is disclosed for passivated semiconductor devices. The metallurgy comprises a compressively stressed, oxygen-containing titanium underlayer covered by a solder-bondable layer extending through via holes in dielectric material on the semiconductor device. The solder bondable layer is either nickel or ruthenium, where lower current densities are encountered or a composite of layers of copper, titanium, copper and gold for higher current densities.

Abstract translation: 公开了接触式冶金用于钝化半导体器件。 冶金学包括由可焊接层覆盖的压缩应力的含氧钛底层，该可焊接层延伸穿过半导体器件上介电材料中的通孔。 焊料可焊接层是镍或钌，其中遇到较低的电流密度，或者铜，钛，铜和金的层的复合物用于更高的电流密度。

公开(公告)号：US4463059A

公开(公告)日：1984-07-31

申请号：US394014

申请日：1982-06-30

Applicant: Somnath Bhattacharya ,  Dudley A. Chance ,  Nicholas G. Koopman ,  Sudipta K. Ray

Inventor： Somnath Bhattacharya ,  Dudley A. Chance ,  Nicholas G. Koopman ,  Sudipta K. Ray

IPC: H01L23/52 ,  H01L23/498 ,  H01L23/538 ,  H05K3/24 ,  H05K3/06

CPC classification number: H05K3/244 ,  H01L23/49866 ,  H01L23/538 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K3/388 ,  Y10T428/12507 ,  Y10T428/12528 ,  Y10T428/12583 ,  Y10T428/12882

Abstract: The top surface metallurgy of LSI chip carriers is improved by multiple and phased interface of metal layers which enable such metallurgies to be suitable for joining by solder reflow and wire bonding techniques. The modifications result in separating the solder bonding metallurgy from the fan-out conductor metallurgy with an intermediate layer of a metal such as Cr or Ti which prevents the formation of intermetallic alloys which are mechanically weak or brittle and tend to fracture because of thermal fatigue stresses caused by thermal cycling during either multiple (up to 50) solder bonding reflow operations or operation of the circuit. The fan-out metallurgy conductors are preferably composed of Cr-Cu-Cr layers covered by at least one upper metal layer which is separated from the Cu of the conductor by means of a metal such as phased layers of Cr or Ti deposited before the other upper metal layer or layers. Solder ball bonding surfaces are composed of additional metal in the form of Au, Cu and Ni. The solderless bonding surfaces are composed of a metal selected from Au, Cr, Ti, Al and Co.