公开(公告)号：US06438269B1

公开(公告)日：2002-08-20

申请号：US09236403

申请日：1999-01-25

申请人： Mi Yeon Kim ,  Sang Kyu Choe ,  Su Mi Lim ,  Jang Su Kim

发明人： Mi Yeon Kim ,  Sang Kyu Choe ,  Su Mi Lim ,  Jang Su Kim

IPC分类号： G06K946

CPC分类号： G06F17/30241 ,  G06K9/4604

摘要： The present invention relates to a method for multi-step filtering a candidate object which is filtered by a minimum bounding rectangle (MBR); and, more particulary, to a method of multi-step filtering a candidate object by employing a minimum maximum point (MMP) filter to improve spatial query filtering process performance by refiltering the candidate objects, which are filtered by using a rotated minimum bounding rectangle (Rotated Minimum Bounding Rectangle) surrounding spatial objects during filtering process at a step of spatial query filtering and refining of spatial database, by using spatial filter, i.e., MMP filter.

摘要翻译： 本发明涉及一种用最小边界矩形（MBR）过滤的候选对象的多级过滤方法; 并且更具体地说，涉及通过采用最小最大点（MMP）过滤器来对候选对象进行多步骤过滤的方法，以通过再循环候选对象来提高空间查询过滤性能，所述候选对象被使用旋转的最小边界矩形 通过使用空间滤波器，即MMP滤波器，在空间查询过滤和空间数据库的优化步骤的过滤过程中，围绕空间对象的周期空间对象的旋转最小边界矩形。

公开(公告)号：US20140353848A1

公开(公告)日：2014-12-04

申请号：US14202006

申请日：2014-03-10

申请人： Baek Soung PARK ,  Jae Won CHOI ,  In Hwan KIM ,  Gyu Seok SONG ,  Su Mi LIM

发明人： Baek Soung PARK ,  Jae Won CHOI ,  In Hwan KIM ,  Gyu Seok SONG ,  Su Mi LIM

IPC分类号： H01L23/373 ,  H01L21/48

CPC分类号： H01L23/3737 ,  H01L21/4882 ,  H01L23/3121 ,  H01L23/36 ,  H01L25/0657 ,  H01L2224/16145 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/181 ,  Y10T428/2848 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/01049 ,  H01L2924/01004 ,  H01L2924/00012

摘要： A heat dissipation adhesive film, a semiconductor device including the same, and a method of fabricating the semiconductor device, the heat dissipation adhesive film being placeable between a protective layer encasing a semiconductor element therein and a heat dissipation metal layer on the protective layer to bond the protective layer to the heat dissipation metal layer, wherein an adhesive strength between the heat dissipation adhesive film and the protective layer and an adhesive strength between the heat dissipation adhesive film and the heat dissipation metal layer are each about 3 kgf/25 mm2 or greater.

摘要翻译： 散热粘合膜，包含该半导体装置的半导体装置以及制造该半导体装置的方法，散热粘合剂膜可放置在其中包围半导体元件的保护层与保护层上的散热金属层之间 散热金属层的保护层，其中散热粘合剂膜和保护层之间的粘合强度以及散热粘合剂膜和散热金属层之间的粘合强度分别为约3kgf / 25mm 2或更大 。

公开(公告)号：US09957425B2

公开(公告)日：2018-05-01

申请号：US14204128

申请日：2014-03-11

申请人： Jun Woo Lee ,  Sung Min Kim ,  In Hwan Kim ,  Baek Soung Park ,  Su Mi Lim ,  Jae Won Choi

发明人： Jun Woo Lee ,  Sung Min Kim ,  In Hwan Kim ,  Baek Soung Park ,  Su Mi Lim ,  Jae Won Choi

IPC分类号： C09J163/00 ,  H01L23/00 ,  C09J7/00 ,  C08L63/00 ,  C08K5/00 ,  C08K5/3445

CPC分类号： C09J163/00 ,  C08K5/0025 ,  C08K5/3445 ,  C08L63/00 ,  C09J7/00 ,  C09J7/10 ,  C09J2201/622 ,  C09J2203/326 ,  C09J2205/102 ,  C09J2463/00 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/27003 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29387 ,  H01L2224/32145 ,  H01L2224/83191 ,  H01L2224/83885 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2224/48 ,  H01L2924/05442 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： An adhesive composition for semiconductors, an adhesive film, and a semiconductor device, wherein, in a curing process including a first stage at a temperature ranging from 120° C. to 130° C. for 1 to 20 minutes, a second stage at a temperature ranging from 140° C. to 150° C. for 1 to 10 minutes, a third stage at a temperature ranging from 160° C. to 180° C. for 30 seconds to 10 minutes, and a fourth stage at a temperature ranging from 160° C. to 180° C. for 10 minutes to 2 hours, the adhesive film has a DSC curing rate in the first stage that is 40% or less of a total curing rate, a DSC curing rate in the fourth stage that is 30% to 60% higher than a DSC curing rate in the third stage, and DSC curing rates in each of the second and third stages that are 5% or more higher than a DSC curing rate of a preceding stage thereof.

公开(公告)号：US09240364B2

公开(公告)日：2016-01-19

申请号：US14202006

申请日：2014-03-10

申请人： Baek Soung Park ,  Jae Won Choi ,  In Hwan Kim ,  Gyu Seok Song ,  Su Mi Lim

发明人： Baek Soung Park ,  Jae Won Choi ,  In Hwan Kim ,  Gyu Seok Song ,  Su Mi Lim

IPC分类号： H01L23/48 ,  H01L23/373 ,  H01L23/36 ,  H01L21/48 ,  H01L25/065 ,  H01L23/31

CPC分类号： H01L23/3737 ,  H01L21/4882 ,  H01L23/3121 ,  H01L23/36 ,  H01L25/0657 ,  H01L2224/16145 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/181 ,  Y10T428/2848 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/01049 ,  H01L2924/01004 ,  H01L2924/00012

摘要： A heat dissipation adhesive film, a semiconductor device including the same, and a method of fabricating the semiconductor device, the heat dissipation adhesive film being placeable between a protective layer encasing a semiconductor element therein and a heat dissipation metal layer on the protective layer to bond the protective layer to the heat dissipation metal layer, wherein an adhesive strength between the heat dissipation adhesive film and the protective layer and an adhesive strength between the heat dissipation adhesive film and the heat dissipation metal layer are each about 3 kgf/25 mm2 or greater.

摘要翻译： 散热粘合膜，包含该半导体装置的半导体装置以及制造该半导体装置的方法，散热粘合剂膜可放置在其中包围半导体元件的保护层与保护层上的散热金属层之间 散热金属层的保护层，其中散热粘合剂膜和保护层之间的粘合强度以及散热粘合剂膜和散热金属层之间的粘合强度分别为约3kgf / 25mm 2或更大 。

公开(公告)号：US20140194555A1

公开(公告)日：2014-07-10

申请号：US14204128

申请日：2014-03-11

申请人： Jun Woo LEE ,  Sung Min KIM ,  In Hwan KIM ,  Baek Soung PARK ,  Su Mi LIM ,  Jae Won CHOI

发明人： Jun Woo LEE ,  Sung Min KIM ,  In Hwan KIM ,  Baek Soung PARK ,  Su Mi LIM ,  Jae Won CHOI

IPC分类号： C09J163/00

CPC分类号： C09J163/00 ,  C08K5/0025 ,  C08K5/3445 ,  C08L63/00 ,  C09J7/00 ,  C09J7/10 ,  C09J2201/622 ,  C09J2203/326 ,  C09J2205/102 ,  C09J2463/00 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/27003 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29387 ,  H01L2224/32145 ,  H01L2224/83191 ,  H01L2224/83885 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2224/48 ,  H01L2924/05442 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： An adhesive composition for semiconductors, an adhesive film, and a semiconductor device, wherein, in a curing process including a first stage at a temperature ranging from 120° C. to 130° C. for 1 to 20 minutes, a second stage at a temperature ranging from 140° C. to 150° C. for 1 to 10 minutes, a third stage at a temperature ranging from 160° C. to 180° C. for 30 seconds to 10 minutes, and a fourth stage at a temperature ranging from 160° C. to 180° C. for 10 minutes to 2 hours, the adhesive film has a DSC curing rate in the first stage that is 40% or less of a total curing rate, a DSC curing rate in the fourth stage that is 30% to 60% higher than a DSC curing rate in the third stage, and DSC curing rates in each of the second and third stages that are 5% or more higher than a DSC curing rate of a preceding stage thereof.

摘要翻译： 一种用于半导体的粘合剂组合物，粘合剂膜和半导体器件，其中在包括在120℃至130℃的温度下进行1至20分钟的第一阶段的固化过程中，第二阶段在 温度范围为140℃至150℃，持续1至10分钟，第三阶段在160℃至180℃的温度下进行30秒至10分钟，第四阶段在温度范围 从160℃至180℃进行10分钟〜2小时，粘合膜的第一阶段的DSC固化速度为总固化速度的40％以下，第四阶段的DSC固化速度为 比第三阶段的DSC固化速度高30〜60％，第二阶段和第三阶段的DSC固化速度比前一阶段的DSC固化速度高5％以上。