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公开(公告)号：US09627388B2
公开(公告)日：2017-04-18
申请号：US14731003
申请日：2015-06-04
Applicant: Hee-Woong Kang , Suejin Kim , Heewon Lee
Inventor： Hee-Woong Kang , Suejin Kim , Heewon Lee
IPC: G11C29/00 , H01L27/108 , G11C11/56 , G11C29/52 , H01L23/528 , H01L49/02 , G11C16/04 , G06F11/10 , G11C29/42 , G11C29/04 , H01L27/11582
CPC classification number: H01L27/10823 , G06F11/1048 , G11C11/5635 , G11C11/5671 , G11C16/0466 , G11C29/42 , G11C29/52 , G11C2029/0411 , H01L23/528 , H01L27/10814 , H01L27/11582 , H01L28/40 , H01L2924/0002 , H01L2924/00
Abstract: The memory system has an overwrite operation and an operation control method thereof. A nonvolatile memory device has a plurality of memory blocks including a plurality of memory cells stacked in a direction perpendicular to a substrate. When data of memory cells connected to a word line of a selected memory block is read, the need of reclaim is determined based on an error bit level of the read data. In the case that memory cells having an erase state among the memory cells connected to the word line become a soft program state, the read data is overwritten in the memory cells connected to the word line of the selected memory block.
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公开(公告)号：US20170177425A1
公开(公告)日：2017-06-22
申请号：US15376227
申请日：2016-12-12
Applicant: HYUN-SEUNG JEI , HEEWON LEE , SUEJIN KIM
Inventor： HYUN-SEUNG JEI , HEEWON LEE , SUEJIN KIM
CPC classification number: G06F11/076 , G06F11/0727 , G06F11/0751 , G06F11/102 , G06F11/1048 , G06F11/1072 , G11C16/3495 , G11C29/52 , G11C2029/0409 , G11C2029/0411
Abstract: A read reclaim method of a storage device includes detecting, at a cycle of a random number of read operations, the number of error bits within non-selection data stored in each of a plurality of memory blocks. A memory block having the number of detected error bits, with respect to the number of read operations, increasing at a rate greater than a reference rate over one or more cycles of the random number of read operations is selected as a weak block. The number of error bits within non-selection data stored in the weak block is detected at a cycle of a fixed number of read operations. A detection is made of whether the number of error bits detected according to the fixed-number cycle is greater than or equal to a read reclaim reference. The non-selection data is data not requested by a host.
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Patent Agency Ranking
公开(公告)号：US20150364474A1
公开(公告)日：2015-12-17
申请号：US14731764
申请日：2015-06-05
Applicant: HEE-WOONG KANG , SUEJIN KIM , HEEWON LEE
Inventor： HEE-WOONG KANG , SUEJIN KIM , HEEWON LEE
IPC: H01L27/108 , H01L23/528 , H01L49/02
CPC classification number: H01L27/10823 , G06F11/1048 , G11C11/5635 , G11C11/5671 , G11C16/0466 , G11C29/42 , G11C29/52 , G11C2029/0411 , H01L23/528 , H01L27/10814 , H01L27/11582 , H01L28/40 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor device includes a substrate, a memory structure and a capacitor structure including at least one array of capacitors. The memory structure is disposed in a first region of the device. The capacitor structure is disposed in a second region of the device. The capacitor structure may include a first capacitor array, a second capacitor array, a third capacitor array and a first landing pad. The first landing pad is disposed between the substrate and lower electrodes of capacitors of the first and second capacitor arrays, and contacts the lower electrodes so as to electrically connect the first capacitor array and the second capacitor array. Upper electrodes of capacitors of the second and third capacitor arrays are integral such that the second capacitor array and the third capacitor array are electrically connected to each other.
Abstract translation: 半导体器件包括衬底，存储器结构和包括至少一个电容器阵列的电容器结构。 存储器结构设置在器件的第一区域中。 电容器结构设置在器件的第二区域中。 电容器结构可以包括第一电容器阵列，第二电容器阵列，第三电容器阵列和第一着陆焊盘。 第一着陆焊盘设置在第一和第二电容器阵列的电容器的基板和下电极之间，并且接触下电极，以便电连接第一电容器阵列和第二电容器阵列。 第二和第三电容器阵列的电容器的上部电极是一体的，使得第二电容器阵列和第三电容器阵列彼此电连接。
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公开(公告)号：US10310924B2
公开(公告)日：2019-06-04
申请号：US15376227
申请日：2016-12-12
Applicant: Hyun-Seung Jei , Heewon Lee , Suejin Kim
Inventor： Hyun-Seung Jei , Heewon Lee , Suejin Kim
Abstract: A read reclaim method of a storage device includes detecting, at a cycle of a random number of read operations, the number of error bits within non-selection data stored in each of a plurality of memory blocks. A memory block having the number of detected error bits, with respect to the number of read operations, increasing at a rate greater than a reference rate over one or more cycles of the random number of read operations is selected as a weak block. The number of error bits within non-selection data stored in the weak block is detected at a cycle of a fixed number of read operations. A detection is made of whether the number of error bits detected according to the fixed-number cycle is greater than or equal to a read reclaim reference. The non-selection data is data not requested by a host.
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公开(公告)号：US20160203047A1
公开(公告)日：2016-07-14
申请号：US14979971
申请日：2015-12-28
Applicant: HYERY NO , SANGKWON MOON , SUEJIN KIM , HEEWON LEE
Inventor： HYERY NO , SANGKWON MOON , SUEJIN KIM , HEEWON LEE
CPC classification number: G06F11/1068 , G06F3/0604 , G06F3/0619 , G06F3/064 , G06F3/0679 , G06F11/1048 , G11C11/5642 , G11C29/42 , G11C29/52
Abstract: A nonvolatile memory system includes a nonvolatile memory device and a memory controller managing the nonvolatile memory device. The operation method includes receiving a read command and a read address from an external device, reading read data stored in memory cells connected to a selected word line of a selected memory block corresponding to the read address in response to the read command, and detecting and correcting error bits of the read data. The method includes estimating the number of error bits of unselected word lines on the basis of erase leaving times of memory cells connected to the unselected word lines of the selected memory block and the detected error bits, and performing read-reclaim operation on at least one word line among the selected word line and the unselected word lines on the basis of the estimated number of error bits.
Abstract translation: 非易失性存储器系统包括非易失性存储器件和管理非易失性存储器件的存储器控制器。 操作方法包括从外部设备接收读取命令和读取地址，响应于读取命令，读取存储在连接到与所读取的地址对应的所选择的存储器块的选定字线上的存储器单元中的读取数据， 纠正读取数据的错误位。 该方法包括：基于连接到所选择的存储器块的未选择字线的存储器单元的擦除离开时间和检测到的错误位，来估计未选择字线的错误位的数量，以及至少一个执行读取回收操作 基于所估计的错误比特数，所选字线和未选字线之间的字线。
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公开(公告)号：US09690654B2
公开(公告)日：2017-06-27
申请号：US14979971
申请日：2015-12-28
Applicant: Hyery No , Sangkwon Moon , Suejin Kim , Heewon Lee
Inventor： Hyery No , Sangkwon Moon , Suejin Kim , Heewon Lee
CPC classification number: G06F11/1068 , G06F3/0604 , G06F3/0619 , G06F3/064 , G06F3/0679 , G06F11/1048 , G11C11/5642 , G11C29/42 , G11C29/52
Abstract: A nonvolatile memory system includes a nonvolatile memory device and a memory controller managing the nonvolatile memory device. The operation method includes receiving a read command and a read address from an external device, reading read data stored in memory cells connected to a selected word line of a selected memory block corresponding to the read address in response to the read command, and detecting and correcting error bits of the read data. The method includes estimating the number of error bits of unselected word lines on the basis of erase leaving times of memory cells connected to the unselected word lines of the selected memory block and the detected error bits, and performing read-reclaim operation on at least one word line among the selected word line and the unselected word lines on the basis of the estimated number of error bits.
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公开(公告)号：US20150364199A1
公开(公告)日：2015-12-17
申请号：US14731003
申请日：2015-06-04
Applicant: HEE-WOONG KANG , SUEJIN KIM , HEEWON LEE
Inventor： HEE-WOONG KANG , SUEJIN KIM , HEEWON LEE
CPC classification number: H01L27/10823 , G06F11/1048 , G11C11/5635 , G11C11/5671 , G11C16/0466 , G11C29/42 , G11C29/52 , G11C2029/0411 , H01L23/528 , H01L27/10814 , H01L27/11582 , H01L28/40 , H01L2924/0002 , H01L2924/00
Abstract: The memory system has an overwrite operation and an operation control method thereof. A nonvolatile memory device has a plurality of memory blocks including a plurality of memory cells stacked in a direction perpendicular to a substrate. When data of memory cells connected to a word line of a selected memory block is read, the need of reclaim is determined based on an error bit level of the read data. In the case that memory cells having an erase state among the memory cells connected to the word line become a soft program state, the read data is overwritten in the memory cells connected to the word line of the selected memory block.
Abstract translation: 存储器系统具有覆盖操作及其操作控制方法。 非易失性存储器件具有多个存储块，包括沿垂直于衬底的方向堆叠的多个存储单元。 当连接到所选存储块的字线的存储器单元的数据被读取时，基于所读取的数据的错误位级确定回收的需要。 在连接到字线的存储单元中具有擦除状态的存储单元变为软程序状态的情况下，在连接到所选存储块的字线的存储单元中覆盖读取的数据。
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