公开(公告)号：US09798657B2

公开(公告)日：2017-10-24

申请号：US14825853

申请日：2015-08-13

申请人： Sangkwon Moon ,  Seung-Yeon Lee ,  Heewon Lee ,  In Hwan Doh ,  NamWook Kang

发明人： Sangkwon Moon ,  Seung-Yeon Lee ,  Heewon Lee ,  In Hwan Doh ,  NamWook Kang

IPC分类号： G06F3/06 ,  G06F12/02

CPC分类号： G06F12/0246 ,  G06F3/0614 ,  G06F3/0652 ,  G06F3/0679 ,  G06F12/0253 ,  G06F2212/1016 ,  G06F2212/1032 ,  G06F2212/7205 ,  G06F2212/7209

摘要： A method of operating a data storage device includes programming non-fully programmed memory blocks at a point in time when a reference time elapses from a point in time when each of the memory blocks is physically erased, acquiring a first interval and a second interval, calculating a disturb index based on the first interval and the second interval, selecting a victim block for garbage collection based on the disturb index, and copying valid page data of the victim block into a free block. The first interval is defined by a point in time when each of the memory blocks is physically erased and a point in time when each of the memory blocks is fully programmed. The second interval is an interval during which a fully programmed state is maintained after a point in time when each of the memory blocks is fully programmed.

公开(公告)号：US20170177425A1

公开(公告)日：2017-06-22

申请号：US15376227

申请日：2016-12-12

申请人： HYUN-SEUNG JEI ,  HEEWON LEE ,  SUEJIN KIM

发明人： HYUN-SEUNG JEI ,  HEEWON LEE ,  SUEJIN KIM

IPC分类号： G06F11/07 ,  G11C29/52 ,  G06F11/10

CPC分类号： G06F11/076 ,  G06F11/0727 ,  G06F11/0751 ,  G06F11/102 ,  G06F11/1048 ,  G06F11/1072 ,  G11C16/3495 ,  G11C29/52 ,  G11C2029/0409 ,  G11C2029/0411

摘要： A read reclaim method of a storage device includes detecting, at a cycle of a random number of read operations, the number of error bits within non-selection data stored in each of a plurality of memory blocks. A memory block having the number of detected error bits, with respect to the number of read operations, increasing at a rate greater than a reference rate over one or more cycles of the random number of read operations is selected as a weak block. The number of error bits within non-selection data stored in the weak block is detected at a cycle of a fixed number of read operations. A detection is made of whether the number of error bits detected according to the fixed-number cycle is greater than or equal to a read reclaim reference. The non-selection data is data not requested by a host.

公开(公告)号：US20150364474A1

公开(公告)日：2015-12-17

申请号：US14731764

申请日：2015-06-05

申请人： HEE-WOONG KANG ,  SUEJIN KIM ,  HEEWON LEE

发明人： HEE-WOONG KANG ,  SUEJIN KIM ,  HEEWON LEE

IPC分类号： H01L27/108 ,  H01L23/528 ,  H01L49/02

CPC分类号： H01L27/10823 ,  G06F11/1048 ,  G11C11/5635 ,  G11C11/5671 ,  G11C16/0466 ,  G11C29/42 ,  G11C29/52 ,  G11C2029/0411 ,  H01L23/528 ,  H01L27/10814 ,  H01L27/11582 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a substrate, a memory structure and a capacitor structure including at least one array of capacitors. The memory structure is disposed in a first region of the device. The capacitor structure is disposed in a second region of the device. The capacitor structure may include a first capacitor array, a second capacitor array, a third capacitor array and a first landing pad. The first landing pad is disposed between the substrate and lower electrodes of capacitors of the first and second capacitor arrays, and contacts the lower electrodes so as to electrically connect the first capacitor array and the second capacitor array. Upper electrodes of capacitors of the second and third capacitor arrays are integral such that the second capacitor array and the third capacitor array are electrically connected to each other.

摘要翻译： 半导体器件包括衬底，存储器结构和包括至少一个电容器阵列的电容器结构。 存储器结构设置在器件的第一区域中。 电容器结构设置在器件的第二区域中。 电容器结构可以包括第一电容器阵列，第二电容器阵列，第三电容器阵列和第一着陆焊盘。 第一着陆焊盘设置在第一和第二电容器阵列的电容器的基板和下电极之间，并且接触下电极，以便电连接第一电容器阵列和第二电容器阵列。 第二和第三电容器阵列的电容器的上部电极是一体的，使得第二电容器阵列和第三电容器阵列彼此电连接。

公开(公告)号：US4460492A

公开(公告)日：1984-07-17

申请号：US322937

申请日：1981-11-19

申请人： Mortimer M. Labes ,  Heewon Lee

发明人： Mortimer M. Labes ,  Heewon Lee

IPC分类号： C09K19/54 ,  C09K3/34

CPC分类号： C09K19/54

摘要： A low viscosity, short pitch, cholesteric liquid crystal composition consisting of an alkali cromoglycate dissolved in water or water with a polar solvent, together with an optically active solute in sufficient concentration to render the cromoglycate cholesteric. Suitable compositions will reflect light in the visible spectrum and may be magnetically, electrically, or thermally addressed to produce optical effects therein.

摘要翻译： 低粘度，短间距，胆固醇液晶组合物由溶于水或水的极性溶剂的色甘酸钠组成，以及足够浓度的光学活性溶质以使色甘酸酯胆固醇。 合适的组合物将反射在可见光谱中的光，并且可以是磁性的，电的或热的寻址以在其中产生光学效应。

公开(公告)号：US10013211B2

公开(公告)日：2018-07-03

申请号：US15605404

申请日：2017-05-25

申请人： Donghwan Lee ,  Junjin Kong ,  Seongnam Kwon ,  Seungkyung Ro ,  Changkyu Seol ,  Hong Rak Son ,  Pilsang Yoon ,  Donggi Lee ,  Heewon Lee

发明人： Donghwan Lee ,  Junjin Kong ,  Seongnam Kwon ,  Seungkyung Ro ,  Changkyu Seol ,  Hong Rak Son ,  Pilsang Yoon ,  Donggi Lee ,  Heewon Lee

IPC分类号： G11C7/00 ,  G06F3/06 ,  G06N99/00

CPC分类号： G06F3/0659 ,  G06F3/061 ,  G06F3/0619 ,  G06F3/0656 ,  G06F3/0679 ,  G06N20/00 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/0483

摘要： A storage device may include a nonvolatile memory device, a buffer memory, and a controller. The controller may perform first accesses on the nonvolatile memory device using the buffer memory, collect access result information and access environment information of the first accesses in the buffer memory, and generate an access classifier that predicts a result of a second access to the nonvolatile memory device by performing machine learning based on the access result information and the access environment information collected in the buffer memory.

公开(公告)号：US20180004415A1

公开(公告)日：2018-01-04

申请号：US15423629

申请日：2017-02-03

申请人： HEEWON LEE ,  SARI GO ,  SEUNGKYUNG RO ,  SEONGNAM KWON

发明人： HEEWON LEE ,  SARI GO ,  SEUNGKYUNG RO ,  SEONGNAM KWON

IPC分类号： G06F3/06 ,  G11C16/10 ,  G11C16/16 ,  G11C16/04 ,  G11C16/34 ,  G11C16/26

CPC分类号： G11C16/3418 ,  G06F3/0679 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/3422 ,  G11C16/3427 ,  G11C16/3431 ,  G11C16/349 ,  G11C16/3495

摘要： A storage device includes a nonvolatile memory device and a controller. The nonvolatile memory device includes multiple memory blocks, each of which includes memory cells. The controller reads data from selected memory cells of a memory block selected from the memory blocks during a read operation. The selected memory cells correspond to both a word line and a string selection line selected as a read target. The controller increases a read count by a read weight corresponding to the selected word line and string selection line of the selected memory block, and performs a refresh operation on the selected memory cells if the read count reaches a threshold value. In the selected memory block, two or more read weights are assigned according to locations of the string selection lines and the word lines.

公开(公告)号：US09690654B2

公开(公告)日：2017-06-27

申请号：US14979971

申请日：2015-12-28

申请人： Hyery No ,  Sangkwon Moon ,  Suejin Kim ,  Heewon Lee

发明人： Hyery No ,  Sangkwon Moon ,  Suejin Kim ,  Heewon Lee

IPC分类号： G11C29/00 ,  G06F11/10 ,  G06F3/06 ,  G11C29/52 ,  G11C29/42 ,  G11C11/56

CPC分类号： G06F11/1068 ,  G06F3/0604 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0679 ,  G06F11/1048 ,  G11C11/5642 ,  G11C29/42 ,  G11C29/52

摘要： A nonvolatile memory system includes a nonvolatile memory device and a memory controller managing the nonvolatile memory device. The operation method includes receiving a read command and a read address from an external device, reading read data stored in memory cells connected to a selected word line of a selected memory block corresponding to the read address in response to the read command, and detecting and correcting error bits of the read data. The method includes estimating the number of error bits of unselected word lines on the basis of erase leaving times of memory cells connected to the unselected word lines of the selected memory block and the detected error bits, and performing read-reclaim operation on at least one word line among the selected word line and the unselected word lines on the basis of the estimated number of error bits.

公开(公告)号：US09418746B2

公开(公告)日：2016-08-16

申请号：US14968495

申请日：2015-12-14

申请人： Sangkwon Moon ,  Seongjun Ahn ,  Heewon Lee

发明人： Sangkwon Moon ,  Seongjun Ahn ,  Heewon Lee

IPC分类号： G11C16/16 ,  G11C16/04 ,  G11C16/26 ,  G11C16/32

CPC分类号： G11C16/16 ,  G11C7/02 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/32

摘要： A storage device includes a nonvolatile memory having a plurality of memory cells and a memory controller to control the nonvolatile memory. The operating method of the storage device includes reading previously programmed memory cells among the memory cells of the nonvolatile memory and determining a time after erase of the previously programmed memory cells, programming selected memory cells of the nonvolatile memory, and programming meta data including a time after erase of the selected memory cells, based on the determined time after erase of the previously programmed memory cells.

摘要翻译： 存储装置包括具有多个存储单元的非易失性存储器和用于控制非易失性存储器的存储器控​​制器。 存储装置的操作方法包括读取非易失性存储器的存储器单元中的先前编程的存储器单元，并且确定先前编程的存储器单元的擦除之后的时间，编程非易失性存储器的选定的存储单元，以及编程包括时间的元数据 在擦除所选择的存储器单元之后，基于擦除先前编程的存储器单元之后的确定时间。

公开(公告)号：US20150364199A1

公开(公告)日：2015-12-17

申请号：US14731003

申请日：2015-06-04

申请人： HEE-WOONG KANG ,  SUEJIN KIM ,  HEEWON LEE

发明人： HEE-WOONG KANG ,  SUEJIN KIM ,  HEEWON LEE

IPC分类号： G11C16/14 ,  G06F11/10 ,  G11C29/52 ,  G11C11/56

CPC分类号： H01L27/10823 ,  G06F11/1048 ,  G11C11/5635 ,  G11C11/5671 ,  G11C16/0466 ,  G11C29/42 ,  G11C29/52 ,  G11C2029/0411 ,  H01L23/528 ,  H01L27/10814 ,  H01L27/11582 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： The memory system has an overwrite operation and an operation control method thereof. A nonvolatile memory device has a plurality of memory blocks including a plurality of memory cells stacked in a direction perpendicular to a substrate. When data of memory cells connected to a word line of a selected memory block is read, the need of reclaim is determined based on an error bit level of the read data. In the case that memory cells having an erase state among the memory cells connected to the word line become a soft program state, the read data is overwritten in the memory cells connected to the word line of the selected memory block.

摘要翻译： 存储器系统具有覆盖操作及其操作控制方法。 非易失性存储器件具有多个存储块，包括沿垂直于衬底的方向堆叠的多个存储单元。 当连接到所选存储块的字线的存储器单元的数据被读取时，基于所读取的数据的错误位级确定回收的需要。 在连接到字线的存储单元中具有擦除状态的存储单元变为软程序状态的情况下，在连接到所选存储块的字线的存储单元中覆盖读取的数据。

公开(公告)号：US20150005500A1

公开(公告)日：2015-01-01

申请号：US14313085

申请日：2014-06-24

申请人： Nizar HADDAD ,  Heewon LEE ,  Bo QU ,  Sonia RODRIGUEZ ,  Chris Hugh SENANAYAKE

发明人： Nizar HADDAD ,  Heewon LEE ,  Bo QU ,  Sonia RODRIGUEZ ,  Chris Hugh SENANAYAKE

IPC分类号： B01J31/22 ,  C07D209/04 ,  C07D231/56 ,  C07D307/79 ,  C07C29/145 ,  C07D215/20 ,  C07D333/54

CPC分类号： B01J31/2295 ,  B01J23/462 ,  B01J31/1805 ,  B01J31/1815 ,  B01J31/1825 ,  B01J31/24 ,  B01J31/2471 ,  B01J2231/643 ,  B01J2531/0238 ,  B01J2531/821 ,  C07B53/00 ,  C07C29/145 ,  C07C29/156 ,  C07D209/04 ,  C07D215/20 ,  C07D231/56 ,  C07D307/79 ,  C07D333/54 ,  C07D405/04 ,  C07F15/0046 ,  C07F15/0053 ,  C07C35/23 ,  C07C35/52 ,  C07C33/46 ,  C07C33/22

摘要： Disclosed are novel ruthenium compounds of formula (Ia) and (Ib): wherein R1 and the moiety are defined herein. Also disclosed is a process for using these novel ruthenium compounds as catalysts for asymmetric hydrogenation and transfer hydrogenation of ketones with high reactivities and excellent selectivities.

摘要翻译： 公开了式（Ia）和（Ib）的新型钌化合物：其中R 1和该部分在本文中定义。 还公开了使用这些新型钌化合物作为催化剂用于具有高反应性和优异的选择性的酮的不对称氢化和转移氢化的方法。