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公开(公告)号：US12191630B2
公开(公告)日：2025-01-07
申请号：US17539266
申请日：2021-12-01
Applicant: TRUMPF Photonic Components GmbH
Abstract: A vertical cavity surface emitting laser device includes: an optical resonator; a photodiode; and a contact arrangement. The optical resonator includes: two distributed Bragg reflectors (DBRs) and an active region between the DBRs. The photodiode has a light absorption region in the optical resonator. The contact arrangement provides drive current to pump the optical resonator, and contacts the photodiode. The active region has an InxGa1-xAs layer, where 0≤x x. The InyGa1-yAs layer is an intrinsic layer of the light absorption region. The InyGa1-yAs layer is 15-50 nm thick. The light absorption region has an undoped layer with a material different from the InyGa1-yAs layer. The InyGa1-yAs layer is immediately adjacent to the undoped layer. An intrinsic zone of the light absorption region is at least 70 nm thick.
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公开(公告)号：US20250004037A1
公开(公告)日：2025-01-02
申请号：US18882802
申请日：2024-09-12
Applicant: TRUMPF Photonic Components GmbH
Inventor： Sven Bader
Abstract: A method for providing a calibration number for optimizing an evaluation of a detection signal obtained from a self-mixing interference of a VCSEL includes measuring a threshold current at which the VCSEL starts to emit a laser light, measuring a working current at a specified power value of the laser light, measuring a working voltage at a specified first electric current value, and determining the calibration number by using a processor based on the threshold current, the working current, and the working voltage.
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公开(公告)号：US20240380179A1
公开(公告)日：2024-11-14
申请号：US18780554
申请日：2024-07-23
Applicant: TRUMPF Photonic Components GmbH
Inventor： Holger Joachim Moench , Stephan Gronenborn
IPC: H01S5/183
Abstract: A laser apparatus includes a vertical-emitting semiconductor laser device for emitting laser light. The vertical-emitting semiconductor laser device includes a main body having a first mirror section, a second mirror section, and an active layer arranged between the first mirror section and the second mirror section for generating the laser light. The main body has an emission region on a surface thereof for emission of the laser light. The laser apparatus further includes an optical meta-element arranged on the emission region. The optical meta-element includes an optical metamaterial for shaping the laser light. The optical meta-element is configured to emit the laser light in at least one laser mode.
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公开(公告)号：US20240372329A1
公开(公告)日：2024-11-07
申请号：US18776278
申请日：2024-07-18
Applicant: TRUMPF Photonic Components GmbH
Inventor： Roman Koerner , Alexander Weigl
Abstract: A semiconductor component for emitting laser light includes a main body having at least one mesa portion with an emission region for the laser light. The emission region includes a first mirror portion, a second mirror portion, and an active portion arranged between the first mirror portion and the second mirror portion. The active portion serves to generate the laser light. The semiconductor component further includes electrical contacts for feeding electrical energy into the active portion, and a metallic polarization grating arranged on a surface of the main body on the emission region.
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公开(公告)号：US20240356304A1
公开(公告)日：2024-10-24
申请号：US18733980
申请日：2024-06-05
Applicant: TRUMPF Photonic Components GmbH
Inventor： Roman Koerner
CPC classification number: H01S5/3095 , H01S5/0262 , H01S5/0421 , H01S5/18327 , H01S5/1835
Abstract: A VCSEL includes a vertical resonator structure that includes a first Bragg reflector, a second Bragg reflector, and an active region, and a laser diode structure that includes a p-doped first region and an n-doped second region arranged on two sides of the active region, respectively. The vertical resonator structure further includes a tunnel diode structure having a highly n-doped first semiconductor layer and a highly p-doped second semiconductor layer. The VCSEL further includes an electrical contact arrangement having a first metal contact and a second metal contact defining a current path so that, for a voltage applied to the contact arrangement that is a reverse voltage in relation to the laser diode structure and a forward voltage in relation to the tunnel diode structure, charge carriers are conducted away from the vertical resonator structure via the tunnel diode structure into the second metal contact.
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Patent Agency Ranking
公开(公告)号：US20240332904A1
公开(公告)日：2024-10-03
申请号：US18661788
申请日：2024-05-13
Applicant: TRUMPF Photonic Components GmbH
Inventor： Stephan Gronenborn , Johanna Sophie Kolb
IPC: H01S5/183
CPC classification number: H01S5/18347 , H01S5/18327
Abstract: A semiconductor component for emitting light, having a base body that has at least one mesa body with an emission region for light, the at least one mesa body being arranged on a surface of the base body and is assigned a first mirror portion, a second mirror portion, and an active layer arranged between the two mirror portions for generating the light, and having a contact unit for feeding electrical energy into the active layer, the contact unit having a joining portion for joining and/or for external contacting of the semiconductor component and an active contact portion that is arranged between the joining portion and the active layer, the at least one contact unit being arranged on a side of the base body opposite to the emission region, the joining portion at least partially covering the mesa-receiving body portion and a mesa-free body portion of the base body.
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公开(公告)号：US12034275B2
公开(公告)日：2024-07-09
申请号：US16919149
申请日：2020-07-02
Applicant: TRUMPF Photonic Components GmbH
Inventor： Stephan Gronenborn , Holger Joachim Moench
CPC classification number: H01S5/18391 , H01S5/423 , H01S5/042
Abstract: A laser arrangement includes a laser array including a plurality of Vertical Cavity Surface Emitting lasers and an optical structure including a diffuser arranged to change a distribution of the laser light. The optical structure is configured to transform the laser light to transformed laser light such that an overlap of the emission cones of at least a group of the plurality of lasers is increased in field-of-view in comparison to perfectly collimated laser light diffused to a flat-top intensity profile in the field-of-view. The optical structure is arranged to redirect the laser light emitted at angles of the emission cone to the field-of-view so as to increase the overlap of the emitted laser light in the field-of-view. The optical structure is also configured to provide a slope angle α of an intensity profile along a direction of the field-of-view that is smaller than a divergence angle of the laser.
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公开(公告)号：US20240128719A1
公开(公告)日：2024-04-18
申请号：US18397856
申请日：2023-12-27
Applicant: TRUMPF Photonic Components GmbH
Inventor： Roman Koerner , Alexander Weigl , Holger Joachim Moench , Berthold Schmidt
CPC classification number: H01S5/18308 , H01S5/0217 , H01S5/18305 , H01S5/423 , H01S5/34
Abstract: A method for producing a semiconductor component for emitting light includes providing a base body, the base body comprising an active layer for generating the light and a tunnel contact, and forming a stop structure by implantation in a region of the tunnel contact. The stop structure delimits the tunnel contact and serves to constrict a current introduced into the active layer. Defects due to crystal imperfections are generated by the implantation so that the implanted region is transparent for the light having an emitted wavelength.
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公开(公告)号：US20230019896A1
公开(公告)日：2023-01-19
申请号：US17952347
申请日：2022-09-26
Applicant: TRUMPF Photonic Components GmbH
Inventor： Stephan Gronenborn
Abstract: The present invention relates to an illumination device for a distance measurement camera, in particular a time of flight, TOF, camera system, a corresponding illumination method and a distance measurement camera system comprising said illumination device in order to improve distance measurements. The illumination device is configured to illuminate a particular region on an illumination plane with two different illumination profiles such as a first homogenous illumination profile and a second spot pattern illumination profile. The homogeneous illumination profile can enable a measurement with improved lateral resolution whereas the spot pattern illumination can enable a measurement with improved depth resolution.
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公开(公告)号：US11543273B2
公开(公告)日：2023-01-03
申请号：US16718545
申请日：2019-12-18
Applicant: Robert Bosch GmbH , Trumpf Photonic Components GmbH
Inventor： Alexander Van Der Lee , Robert Weiss , Hans Spruit
Abstract: The invention relates to a method for determining the absolute value of the flow velocity (v) of a particle-transporting medium. At least two measurement laser beams (L_i) with linearly independent, non-orthogonal measurement directions (b_i) are emitted. The measurement laser beams (L_i) scattered at particles are detected and one measurement signal (m_i) is generated in each case for each measurement laser beam (L_i). The measurement signals (m_i) are evaluated, wherein absolute values of velocity components (v_i) are ascertained as projections of the flow velocity (v) on the respective measurement directions (b_i), wherein a solid angle region is ascertained for the prevalent direction of the flow velocity (v) and signs assigned to this solid angle region are chosen for the individual velocity components (v_i), and wherein the absolute value of the flow velocity (v) is determined using the ascertained absolute values of the velocity components (v_i) and using the chosen signs for the velocity components (v_i).
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