公开(公告)号：US07108945B2

公开(公告)日：2006-09-19

申请号：US10396309

申请日：2003-03-26

申请人： Takumichi Sutani ,  Kyoko Izuha ,  Tadahito Fujisawa ,  Soichi Inoue

发明人： Takumichi Sutani ,  Kyoko Izuha ,  Tadahito Fujisawa ,  Soichi Inoue

IPC分类号： G01F9/00

CPC分类号： G03F7/70641 ,  G03F1/44

摘要： A photomask has a device pattern, which has an opening portion and a mask portion, and either a focus monitor pattern or an exposure dose monitor pattern, which has an opening portion and a mask portion and which has the same plane pattern shape as at least a partial region of a device pattern. The phase difference in transmitted exposure light between the opening portion and the mask portion of the focus monitor pattern is different from that between the opening portion and the mask portion of the device pattern. The opening portion of the exposure dose monitor pattern has a different exposure dose transmittance from that of the opening portion of the device pattern.

公开(公告)号：US06701512B2

公开(公告)日：2004-03-02

申请号：US10052527

申请日：2002-01-23

申请人： Takumichi Sutani ,  Tadahito Fujisawa ,  Takashi Sato ,  Takashi Sakamoto ,  Masafumi Asano ,  Soichi Inoue

发明人： Takumichi Sutani ,  Tadahito Fujisawa ,  Takashi Sato ,  Takashi Sakamoto ,  Masafumi Asano ,  Soichi Inoue

IPC分类号： G06F1750

CPC分类号： G03F7/70641

摘要： According to a focus monitoring method, an exposure mask on which a focus monitor pattern comprising at least two types of pattern groups is formed is prepared. A pattern group A of the at least two pattern groups is illuminated with illumination light while a barycenter of an illumination light source of illumination optics is in an off-axis state. At least a pattern group B of the at least two pattern groups is illuminated with illumination light while the barycenter of the illumination light source is in an on-axis state. A positional deviation between the pattern groups A and B transferred onto a substrate is measured. An effective focus position can be monitored from this positional deviation.

摘要翻译： 根据聚焦监视方法，准备形成包括至少两种图案组的聚焦监视器图案的曝光掩模。 所述至少两个图案组中的图案组A被照明光照射，而照明光学器件的照明光源的重心处于离轴状态。 至少两个图案组中的图案组B至少被照明光照射，同时照明光源的重心处于轴上状态。 测量转印到基板上的图案组A和B之间的位置偏差。 可以从该位置偏差来监视有效的对焦位置。

公开(公告)号：US06440616B1

公开(公告)日：2002-08-27

申请号：US09671501

申请日：2000-09-27

申请人： Kyoko Izuha ,  Tadahito Fujisawa ,  Soichi Inoue

发明人： Kyoko Izuha ,  Tadahito Fujisawa ,  Soichi Inoue

IPC分类号： G03F900

CPC分类号： G03F7/70641 ,  G03F1/26 ,  G03F1/44

摘要： There is disclosed a focus-monitoring mask which is adapted to be employed on an occasion of transferring a pattern on a wafer by way of photolithography, the mask comprising a first pattern region having at least one first monitor pattern which is constituted by a first opening surrounded by a first film or constituted by the first film surrounded by the first opening, and a second pattern region having at least one second monitor pattern which is constituted by a second opening surrounded by a second film or constituted by the second film surrounded by the second opening, and is capable of giving a predetermined phase difference to an exposure light passing through the second film relative to an exposure light passing through the second opening, wherein the first and second monitor patterns have a configuration in which both ends thereof are tapered from a central portion thereof.

摘要翻译： 公开了一种适于在通过光刻法在晶片上转印图案的情况下采用的聚焦监视掩模，该掩模包括具有至少一个第一监视器图案的第一图案区域，该第一图案区域由第一开口 由第一膜包围或由第一膜包围的第一膜构成的第二图案区域和具有至少一个第二监测图案的第二图案区域，该第二图案区域由第二开口构成，第二开口由第二膜包围或由第二膜包围， 并且能够相对于通过第二开口的曝光光对通过第二膜的曝光光赋予预定的相位差，其中第一和第二监视器图案具有其两端从 其中心部分。

公开(公告)号：US07541136B2

公开(公告)日：2009-06-02

申请号：US11472452

申请日：2006-06-22

申请人： Kyoko Izuha ,  Hideki Kanai ,  Soichi Inoue ,  Shingo Kanamitsu ,  Shinichi Ito

发明人： Kyoko Izuha ,  Hideki Kanai ,  Soichi Inoue ,  Shingo Kanamitsu ,  Shinichi Ito

IPC分类号： G03C5/00

CPC分类号： G03F1/30 ,  G03F1/32 ,  G03F7/70641 ,  G03F7/70683

摘要： Disclosed is a mask comprising a first area including a first surrounding area in which a halftone phase shift film or a stacked film of a halftone phase shift film and an opaque film is provided on a transparent substrate, and a first opening area surrounded by the first surrounding area, and a second area including a second surrounding area in which a halftone phase shift film is provided on the transparent substrate and a second opening area surrounded by the second surrounding area, wherein a transparent film is provided in at least a part of the second opening area, the transparent film being configured to give a predetermined phase difference to exposure light passing through that part of the second opening area in which the transparent film is provided relative to exposure light passing through the second surrounding area.

摘要翻译： 公开了一种掩模，其包括：第一区域，包括第一周围区域，在透明基板上设置有半色调相移膜或半色调相移膜的叠层膜和不透明膜;以及第一开口区域， 以及第二区域，其包括在透明基板上设置半色调相移膜的第二周围区域和由第二周围区域围绕的第二开口区域，其中在至少一部分中设置透明膜 第二开口区域，所述透明膜被配置为相对于穿过所述第二周围区域的曝光光而通过其中设置有所述透明膜的所述第二开口区域的那部分的曝光而给予预定的相位差。

公开(公告)号：US20060240341A1

公开(公告)日：2006-10-26

申请号：US11472452

申请日：2006-06-22

申请人： Kyoko Izuha ,  Hideki Kanai ,  Soichi Inoue ,  Shingo Kanamitsu ,  Shinichi Ito

发明人： Kyoko Izuha ,  Hideki Kanai ,  Soichi Inoue ,  Shingo Kanamitsu ,  Shinichi Ito

IPC分类号： G06F17/50 ,  G03F1/00

CPC分类号： G03F1/30 ,  G03F1/32 ,  G03F7/70641 ,  G03F7/70683

摘要： Disclosed is a mask comprising a first area including a first surrounding area in which a halftone phase shift film or a stacked film of a halftone phase shift film and an opaque film is provided on a transparent substrate, and a first opening area surrounded by the first surrounding area, and a second area including a second surrounding area in which a halftone phase shift film is provided on the transparent substrate and a second opening area surrounded by the second surrounding area, wherein a transparent film is provided in at least a part of the second opening area, the transparent film being configured to give a predetermined phase difference to exposure light passing through that part of the second opening area in which the transparent film is provided relative to exposure light passing through the second surrounding area.

公开(公告)号：US07788626B2

公开(公告)日：2010-08-31

申请号：US11138407

申请日：2005-05-27

申请人： Shigeki Nojima ,  Satoshi Tanaka ,  Toshiya Kotani ,  Kyoko Izuha ,  Soichi Inoue

发明人： Shigeki Nojima ,  Satoshi Tanaka ,  Toshiya Kotani ,  Kyoko Izuha ,  Soichi Inoue

IPC分类号： G06F17/50

CPC分类号： G03F1/36

摘要： A pattern data correction method is disclosed, which comprises preparing an integrated circuit pattern, setting a tolerance to the pattern that is allowable error range when the pattern is transferred on a substrate, creating a target pattern within the tolerance, and making correction for the target pattern to make a first correction pattern under a predetermined condition.

摘要翻译： 公开了一种图案数据校正方法，其包括：准备集成电路图案，在图案在衬底上传送时设定容许误差范围的容许度，在公差内产生目标图案，并对目标进行校正 模式以在预定条件下进行第一校正模式。

公开(公告)号：US07194704B2

公开(公告)日：2007-03-20

申请号：US11012491

申请日：2004-12-16

申请人： Toshiya Kotani ,  Shigeki Nojima ,  Suigen Kyoh ,  Kyoko Izuha ,  Ryuji Ogawa ,  Satoshi Tanaka ,  Soichi Inoue ,  Hirotaka Ichikawa

发明人： Toshiya Kotani ,  Shigeki Nojima ,  Suigen Kyoh ,  Kyoko Izuha ,  Ryuji Ogawa ,  Satoshi Tanaka ,  Soichi Inoue ,  Hirotaka Ichikawa

IPC分类号： G06F17/50 ,  G06F9/45 ,  G06F9/455

CPC分类号： G06F17/5081 ,  H01L21/0271

摘要： There is disclosed a method of producing a design layout by optimizing at least one of design rule, process proximity correction parameter and process parameter, including calculating a processed pattern shape based on a design layout and a process parameter, extracting a dangerous spot having an evaluation value with respect to the processed pattern shape, which does not satisfy a predetermined tolerance, generating a repair guideline of the design layout based on a pattern included in the dangerous spot, and repairing that portion of the design layout which corresponds to the dangerous spot based on the repair guideline.

摘要翻译： 公开了一种通过优化设计规则，过程接近校正参数和过程参数中的至少一个来生成设计布局的方法，包括基于设计布局和过程参数来计算处理的图案形状，提取具有评估的危险点 相对于不满足预定公差的加工图案形状的值，基于包含在危险点中的图案生成设计布局的修理指南，并且修复与危险点对应的设计布局的那部分 在维修准则上。

公开(公告)号：US07371483B2

公开(公告)日：2008-05-13

申请号：US10830399

申请日：2004-04-23

申请人： Shingo Kanamitsu ,  Takashi Hirano ,  Kyoko Izuha ,  Soichi Inoue ,  Shinichi Ito

发明人： Shingo Kanamitsu ,  Takashi Hirano ,  Kyoko Izuha ,  Soichi Inoue ,  Shinichi Ito

IPC分类号： G03F9/00

CPC分类号： G03F1/32 ,  G03F1/44 ,  Y10S430/143

摘要： Disclosed is a method for manufacturing a mask for focus monitoring, comprising forming a first opening portion and a second opening portion in a surface region of a transparent substrate, the second opening portion having a pattern shape corresponding to a pattern shape of the first opening portion, and being surrounded by a stack film formed of a halftone film on the transparent substrate and an opaque film on the halftone film, and radiating a charged beam onto a first region which includes an edge of the second opening portion and inside and outside regions which are respectively located inward and outward of the edge of the second opening portion, to etch that part of the transparent substrate which corresponds to the inside region.

摘要翻译： 本发明公开了一种制造用于聚焦监测的掩模的方法，包括在透明基板的表面区域中形成第一开口部分和第二开口部分，所述第二开口部分具有与第一开口部分的图案形状对应的图案形状 并且被由透明基板上的半色调膜形成的叠层膜和半色调膜上的不透明膜包围，并且将带电束辐射到包括第二开口部分的边缘和内部和外部区域的第一区域上， 分别位于第二开口部分的边缘的内侧和外侧，以蚀刻对应于内部区域的透明基板的那部分。

公开(公告)号：US20050204322A1

公开(公告)日：2005-09-15

申请号：US11012491

申请日：2004-12-16

申请人： Toshiya Kotani ,  Shigeki Nojima ,  Suigen Kyoh ,  Kyoko Izuha ,  Ryuji Ogawa ,  Satoshi Tanaka ,  Soichi Inoue ,  Hirotaka Ichikawa

发明人： Toshiya Kotani ,  Shigeki Nojima ,  Suigen Kyoh ,  Kyoko Izuha ,  Ryuji Ogawa ,  Satoshi Tanaka ,  Soichi Inoue ,  Hirotaka Ichikawa

IPC分类号： G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G06F17/50 ,  H01L21/027 ,  H01L21/82

CPC分类号： G06F17/5081 ,  H01L21/0271

摘要： There is disclosed a method of producing a design layout by optimizing at least one of design rule, process proximity correction parameter and process parameter, including calculating a processed pattern shape based on a design layout and a process parameter, extracting a dangerous spot having an evaluation value with respect to the processed pattern shape, which does not satisfy a predetermined tolerance, generating a repair guideline of the design layout based on a pattern included in the dangerous spot, and repairing that portion of the design layout which corresponds to the dangerous spot based on the repair guideline.

摘要翻译： 公开了一种通过优化设计规则，过程接近校正参数和过程参数中的至少一个来生成设计布局的方法，包括基于设计布局和过程参数来计算处理的图案形状，提取具有评估的危险点 相对于不满足预定公差的加工图案形状的值，基于包含在危险点中的图案生成设计布局的修理指南，并且修复与危险点对应的设计布局的那部分 在维修准则上。

公开(公告)号：US07094504B2

公开(公告)日：2006-08-22

申请号：US10668245

申请日：2003-09-24

申请人： Kyoko Izuha ,  Hideki Kanai ,  Soichi Inoue ,  Shingo Kanamitsu ,  Shinichi Ito

发明人： Kyoko Izuha ,  Hideki Kanai ,  Soichi Inoue ,  Shingo Kanamitsu ,  Shinichi Ito

IPC分类号： G01F9/00

CPC分类号： G03F1/30 ,  G03F1/32 ,  G03F7/70641 ,  G03F7/70683

摘要： Disclosed is a mask comprising a first area including a first surrounding area in which a halftone phase shift film or a stacked film of a halftone phase shift film and an opaque film is provided on a transparent substrate, and a first opening area surrounded by the first surrounding area, and a second area including a second surrounding area in which a halftone phase shift film is provided on the transparent substrate and a second opening area surrounded by the second surrounding area, wherein a transparent film is provided in at least a part of the second opening area, the transparent film being configured to give a predetermined phase difference to exposure light passing through that part of the second opening area in which the transparent film is provided relative to exposure light passing through the second surrounding area.