Image processing method using blurring and photographing apparatus using the same
    3.
    发明授权
    Image processing method using blurring and photographing apparatus using the same 有权
    使用模糊的图像处理方法和使用其的拍摄装置

    公开(公告)号:US08681244B2

    公开(公告)日:2014-03-25

    申请号:US13049558

    申请日:2011-03-16

    IPC分类号: H04N9/68 H04N5/228

    摘要: An image processing method and a photography apparatus using the same are provided. The image processing method includes inputting at least one image; selecting a specific region of the at least one image input; extracting a luminance value of the selected specific region; and determining a blurring degree based on the extracted luminance value and performing image processing by blurring the selected specific region using the determined blurring degree.

    摘要翻译: 提供了一种图像处理方法和使用该图像处理方法的摄影装置。 图像处理方法包括:输入至少一个图像; 选择所述至少一个图像输入的特定区域; 提取所选择的特定区域的亮度值; 以及基于所提取的亮度值确定模糊度,并且使用所确定的模糊度来模糊所选择的特定区域来执行图像处理。

    Plastic Organic Electroluminescent Display Device and Method of Fabricating the Same
    5.
    发明申请
    Plastic Organic Electroluminescent Display Device and Method of Fabricating the Same 审中-公开
    塑料有机电致发光显示装置及其制造方法

    公开(公告)号:US20120319572A1

    公开(公告)日:2012-12-20

    申请号:US13311857

    申请日:2011-12-06

    IPC分类号: H01J1/70 H01J9/26

    摘要: Disclosed are a plastic organic electroluminescent display device to realize flexibility and prevent visualization of exterior light and a method for fabricating the same. The plastic organic electroluminescent display device includes a light emitting cell including a first electrode, a light emitting organic layer and a second electrode arranged on a substrate in this order, a barrier film adhered to the substrate provided with the light emitting cell, to seal the light emitting cell, the barrier film including an optically isotropic support film, and a circular polarizer adhered onto the optically isotropic barrier film.

    摘要翻译: 公开了一种实现柔性并防止外部光的可视化的塑料有机电致发光显示装置及其制造方法。 塑料有机电致发光显示装置包括依次包括第一电极,发光有机层和布置在基板上的第二电极的发光单元,粘附到设置有发光单元的基板上的阻挡膜,以密封 发光单元,阻挡膜包括光学各向同性支撑膜和附着在光学各向同性屏障膜上的圆偏振片。

    Semiconductor device and method of manufacturing the same
    6.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US08329582B2

    公开(公告)日:2012-12-11

    申请号:US12650419

    申请日:2009-12-30

    申请人: Tae Kyung Kim

    发明人: Tae Kyung Kim

    IPC分类号: H01L21/44

    摘要: A semiconductor device comprises insulating layer including damascene patterns and formed over a semiconductor substrate, conductive line formed higher than the insulating layer within the respective damascene patterns, and interference-prevention grooves formed within the damascene patterns between sidewalls of the conductive line and the insulating layer.

    摘要翻译: 一种半导体器件包括绝缘层,其包括镶嵌图案并且形成在半导体衬底上,形成在相应的镶嵌图案内的绝缘层的导电线,以及形成在导线和绝缘层的侧壁之间的镶嵌图案内的防干扰槽 。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20120280325A1

    公开(公告)日:2012-11-08

    申请号:US13457985

    申请日:2012-04-27

    IPC分类号: H01L27/088 H01L21/336

    摘要: A semiconductor device includes first gate lines arranged at a first interval over a substrate and each configured to have a silicide layer as a highest layer, second gate lines arranged at a second interval greater than the first interval over the substrate and each configured to have the silicide layer as the highest layer, a first insulating layer formed between the first gate lines over the substrate and includes a gap; a second insulating layer formed on the sidewalls of the second gate lines, an etch-stop layer adjacent the second insulating layer, a third insulating layer located over and between the first gate lines and over and between the second gate lines, a capping layer over the third insulating layer, and a contact plug adjacent to the capping layer and the third insulating layer and coupled to a junction, the junction adjacent the substrate between the second gate lines.

    摘要翻译: 半导体器件包括在衬底上以第一间隔排列的第一栅极线,并且每个被配置为具有硅化物层作为最高层,第二栅极线以大于衬底上的第一间隔的第二间隔布置,并且每个被配置为具有 硅化物层作为最高层,在衬底上的第一栅极线之间形成的包括间隙的第一绝缘层; 形成在所述第二栅极线的侧壁上的第二绝缘层,与所述第二绝缘层相邻的蚀刻停止层,位于所述第一栅极线之间并且位于所述第一栅极线之间且位于所述第二栅极线之间和之间的第三绝缘层, 所述第三绝缘层和与所述覆盖层和所述第三绝缘层相邻并且接合到所述第二栅极线之间的与所述衬底相邻的所述结的接触插塞。

    Apparatus and method for controlling inverter
    9.
    发明授权
    Apparatus and method for controlling inverter 失效
    控制逆变器的装置及方法

    公开(公告)号:US07881080B2

    公开(公告)日:2011-02-01

    申请号:US12088542

    申请日:2006-12-28

    IPC分类号: H02M1/12 H02M1/14

    CPC分类号: H02P23/03 H02P2205/01

    摘要: An apparatus and method for controlling an inverter capable of enhancing reliability of current measurement by ensuring an optimal time for which effective voltage vectors are applied to detect a three-phase current according to a phase current and sizes of the effective voltage vectors, the apparatus comprising a space voltage modulator that generates and outputs effective voltage vectors based upon a voltage command value, and a low modulation determiner that determines whether the effective voltage vectors are located within a low modulation region, and outputs a low modulation switching control signal or a normal modulation switching control signal according to the determination.

    摘要翻译: 一种用于控制逆变器的装置和方法,其能够通过确保施加有效电压矢量的最佳时间来根据有效电压矢量的相电流和大小检测三相电流来提高电流测量的可靠性,该装置包括 空间电压调制器,其基于电压指令值产生并输出有效电压矢量;以及低调制确定器,其确定有效电压矢量是否位于低调制区域内,并输出低调制切换控制信号或正常调制 切换控制信号根据确定。

    Method of Forming Patterns of Semiconductor Device
    10.
    发明申请
    Method of Forming Patterns of Semiconductor Device 失效
    半导体器件形成方法

    公开(公告)号:US20100323520A1

    公开(公告)日:2010-12-23

    申请号:US12650462

    申请日:2009-12-30

    申请人: Tae Kyung Kim

    发明人: Tae Kyung Kim

    IPC分类号: H01L21/3205

    CPC分类号: H01L21/76838 H01L21/76816

    摘要: A method of forming patterns of a semiconductor device comprises forming a number of first insulating patterns that define sidewalls by patterning a first insulating layer formed over a semiconductor substrate, forming second insulating patterns, each second insulating pattern comprising a horizontal portion having two ends and being parallel to the semiconductor substrate and spaced protruding portions protruding from both ends of the horizontal portion parallel to the sidewalls of the first insulating patterns, forming third insulating patterns each filling a space between the protruding portions, removing the protruding portions to form trenches, and forming conductive patterns within the respective trenches.

    摘要翻译: 一种形成半导体器件的图形的方法包括:通过对形成在半导体衬底上形成的第一绝缘层进行构图来形成限定侧壁的多个第一绝缘图案,形成第二绝缘图案,每个第二绝缘图案包括具有两端的水平部分, 平行于半导体衬底,并且与水平部分的两端突出的间隔开的突出部分平行于第一绝缘图案的侧壁,形成第三绝缘图案,每个填充突出部分之间的空间,去除突出部分以形成沟槽,并形成 各个沟槽内的导电图案。