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公开(公告)号：US20130146132A1
公开(公告)日：2013-06-13
申请号：US13816216
申请日：2011-08-03
IPC分类号： H01L31/0224
CPC分类号： H01L31/022466 , H01L31/022475 , H01L31/0747 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： The present invention improves a photoelectric conversion efficiency of a crystalline silicon-based solar cell. The crystalline silicon based solar cell includes a silicon-based thin-film of a first conductivity type and a first transparent electrode layer, in this order, on one surface of a conductive single-crystal silicon substrate, and a silicon-based thin-film of the opposite conductivity type and a second transparent electrode layer, in this order, on the other surface of the conductive single-crystal silicon substrate. The first and second transparent electrode layers are each formed of a transparent conductive metal oxide, and the first transparent electrode layer preferably has at least two layers, and a total thickness of 50 to 120 nm, wherein the carrier density of the substrate-side electroconductive layer is higher than that of the surface-side electroconductive layer, and the carrier density of the surface-side electroconductive layer is 1 to 4×1020 cm−3.
摘要翻译： 本发明提高了晶体硅系太阳能电池的光电转换效率。 晶体硅基太阳能电池包括在导电单晶硅衬底的一个表面上的第一导电类型的硅基薄膜和第一透明电极层，以及硅基薄膜 的第二透明电极层，依次形成在导电性单晶硅基板的另一面上。 第一透明电极层和第二透明电极层各自由透明导电性金属氧化物形成，第一透明电极层优选具有至少两层，总厚度为50〜120nm，其中基板侧导电性的载流子密度 层比表面侧导电层高，表面侧导电层的载流子密度为1〜4×1020cm-3。
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公开(公告)号：US20060097259A1
公开(公告)日：2006-05-11
申请号：US10543516
申请日：2004-05-28
CPC分类号： H01L31/076 , H01L31/046 , Y02E10/548
摘要： A thin film photoelectric converter, especially an integrated thin film photoelectric converter having improved photoelectric conversion efficiency is provided by controlling an open-circuit voltage and a fill factor so as not be small in a thin film photoelectric converter including a crystalline silicon photoelectric conversion unit. The thin film photoelectric converter by the present invention has at least a transparent electrode film, a crystalline silicon photoelectric conversion unit, and a back electrode film formed sequentially on one principal surface of a transparent substrate, and the converter has a whitish discoloring area on a part of a surface of the converter after formation of the crystalline silicon photoelectric conversion unit. A percentage of dimensions of the whitish discoloring area preferably is not more than 5% of a dimension of the photoelectric conversion area. A thin film photoelectric converter of the present invention is preferably an integrated thin film photoelectric converter.
摘要翻译： 通过在包括晶体硅光电转换单元的薄膜光电转换器中控制开路电压和填充因子以不小而提供薄膜光电转换器，特别是具有改进的光电转换效率的集成薄膜光电转换器。 本发明的薄膜光电转换器至少在透明基板的一个主表面上依次形成透明电极膜，晶体硅光电转换单元和背面电极膜，并且转换器具有白色变色区域 形成晶体硅光电转换单元后的转换器表面的一部分。 白色变色区域的尺寸的百分比优选不大于光电转换区域的尺寸的5％。 本发明的薄膜光电转换器优选为集成薄膜光电转换器。
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公开(公告)号：US20060043517A1
公开(公告)日：2006-03-02
申请号：US10530283
申请日：2004-07-15
IPC分类号： H01L31/105
CPC分类号： H01L31/077 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.
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公开(公告)号：US06187150B1
公开(公告)日：2001-02-13
申请号：US09414092
申请日：1999-10-07
申请人： Masashi Yoshimi , Kenji Yamamoto
发明人： Masashi Yoshimi , Kenji Yamamoto
IPC分类号： C23C1408
CPC分类号： H01L31/1884 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/548
摘要： A method for manufacturing a thin film photovoltaic device comprising a transparent conductive film, a thin film photovoltaic unit, and a back transparent conductive film and a back metal electrode which are successively formed on a substrate, wherein the back transparent conductive film is formed by sputtering comprising steps of forming an initial back transparent conductive film under a pressure of 5×10−2 Torr or more for 1 to 30 seconds in the initial stage and forming a main back transparent conductive film having the remainder thickness under a pressure reduced to {fraction (1/10)} the initial pressure or less.
摘要翻译： 一种薄膜光伏器件的制造方法，其特征在于，在基板上依次形成有透明导电膜，薄膜光电单元，背面透明导电膜和背面金属电极，其中，所述背面透明导电膜通过溅射形成 包括在初始阶段在5×10 -2 Torr以上的压力下形成初始背面透明导电膜1〜30秒的步骤，并且在压力降低到{部分（1）的情况下形成剩余厚度的主背面透明导电膜 / 10）}初始压力或更小。
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公开(公告)号：US07847186B2
公开(公告)日：2010-12-07
申请号：US10563009
申请日：2004-07-12
申请人： Toru Sawada , Yohei Koi , Toshiaki Sasaki , Masashi Yoshimi , Masahiro Goto , Kenji Yamamoto
发明人： Toru Sawada , Yohei Koi , Toshiaki Sasaki , Masashi Yoshimi , Masahiro Goto , Kenji Yamamoto
IPC分类号： H01L31/00
CPC分类号： H01L31/077 , H01L31/056 , H01L31/075 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： According to the present invention, sufficient light trapping effect can be exhibited and series resistance can be kept small, by sequentially forming a silicon based low refractive index layer and a thin silicon based interface layer on a backside of a photoelectric conversion layer observed from a light incident side, and as a result a silicon based thin film solar cell may be provided efficiently and at low cost.
摘要翻译： 根据本发明，通过从光线观察到的光电转换层的背面顺序地形成硅基低折射率层和薄硅基界面层，可以发挥足够的光捕获效果并且串联电阻较小 因此，可以以低成本有效地提供硅基薄膜太阳能电池。
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公开(公告)号：US07550665B2
公开(公告)日：2009-06-23
申请号：US10530283
申请日：2004-07-15
CPC分类号： H01L31/077 , H01L31/056 , H01L31/076 , Y02E10/52 , Y02E10/548
摘要： In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.
摘要翻译： 在堆叠层型光电转换装置中，在基板上层叠多个光电转换单元，每个基板包括一个导电型层，本质上为半导体的光电转换层和相反的导电型层 从光线一方的命令。 在与前光电转换单元相邻布置的背光电转换单元中相对靠近光入射侧的前光电转换单元中的至少一个导电类型层和一个导电型层中的至少一个包括硅复合物 至少在其一部分。 硅复合层的厚度大于20nm且小于130nm，氧浓度大于25原子％且小于60原子％，并且包括在硅和氧的非晶合金相中的富硅相部分 。
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7.发明授权Method of producing silicon thin-film photoelectric transducer and plasma CVD apparatus used for the method 有权生产用于该方法的硅薄膜光电转换器和等离子体CVD装置的方法公开(公告)号：US06337224B1
公开(公告)日：2002-01-08
申请号：US09554164
申请日：2000-05-10
IPC分类号： H01L2100
CPC分类号： H01L31/076 , H01L31/03685 , H01L31/077 , H01L31/182 , H01L31/206 , Y02E10/545 , Y02E10/546 , Y02E10/548 , Y02P70/521 , Y10S438/935
摘要： In a method of manufacturing a silicon-based thin film photoelectric converter, a crystalline photoelectric conversion layer included in the photoelectric converter is deposited by plasma CVD under the following conditions: the temperature of the underlying film is at most 550° C.; a gas introduced into a plasma reaction chamber has a silane-based gas and a hydrogen gas where the flow rate of the hydrogen gas relative to the silane-based gas is at least 50 times; the pressure in the plasma reaction chamber is set to 3 Torr; and the deposition speed is 17 nm/min in the thickness-wise direction.
摘要翻译： 在制造硅基薄膜光电转换器的方法中，包括在光电转换器中的晶体光电转换层在以下条件下通过等离子体CVD沉积：底层膜的温度至多为550℃。 引入等离子体反应室的气体具有硅烷系气体和氢气，氢气相对于硅烷系气体的流量为50倍以上， 等离子体反应室中的压力设定为3乇; 并且沉积速度在厚度方向上为17nm / min。
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公开(公告)号：US07678992B2
公开(公告)日：2010-03-16
申请号：US10543516
申请日：2004-05-28
IPC分类号： H01L31/00
CPC分类号： H01L31/076 , H01L31/046 , Y02E10/548
摘要： A thin film photoelectric converter, especially an integrated thin film photoelectric converter having improved photoelectric conversion efficiency is provided by controlling an open-circuit voltage and a fill factor so as not be small in a thin film photoelectric converter including a crystalline silicon photoelectric conversion unit. The thin film photoelectric converter by the present invention has at least a transparent electrode film, a crystalline silicon photoelectric conversion unit, and a back electrode film formed sequentially on one principal surface of a transparent substrate, and the converter has a whitish discoloring area on a part of a surface of the converter after formation of the crystalline silicon photoelectric conversion unit. A percentage of dimensions of the whitish discoloring area preferably is not more than 5% of a dimension of the photoelectric conversion area. A thin film photoelectric converter of the present invention is preferably an integrated thin film photoelectric converter.
摘要翻译： 通过在包括晶体硅光电转换单元的薄膜光电转换器中控制开路电压和填充因子以不小而提供薄膜光电转换器，特别是具有改进的光电转换效率的集成薄膜光电转换器。 本发明的薄膜光电转换器至少在透明基板的一个主表面上依次形成透明电极膜，晶体硅光电转换单元和背面电极膜，并且转换器具有白色变色区域 形成晶体硅光电转换单元后的转换器表面的一部分。 白色变色区域的尺寸的百分比优选不大于光电转换区域的尺寸的5％。 本发明的薄膜光电转换器优选为集成薄膜光电转换器。
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9.发明授权公开(公告)号：US06326304B1
公开(公告)日：2001-12-04
申请号：US09390040
申请日：1999-09-03
申请人： Masashi Yoshimi , Kenji Yamamoto
发明人： Masashi Yoshimi , Kenji Yamamoto
IPC分类号： H01L2144
CPC分类号： H01L31/202 , H01L31/075 , Y02E10/548 , Y02P70/521
摘要： At least one of a p type semiconductor layer, an i type amorphous silicon-based photoelectric conversion layer, and an n type semiconductor layer that compose an amorphous silicon-based thin film photoelectric conversion device is deposited under the following conditions. Silane-type gas as a main component of raw material gas which is supplied into a reaction chamber and dilution gas containing hydrogen are used, the flow rate of the dilution gas is four or less times that of the silane-type gas, the partial pressure of the silane-type gas in the plasma CVD reaction chamber ranges from 1.2 Torr to 5.0 Torr, and the distance between a surface of a substrate mounted on an anode electrode and a surface of a cathode electrode ranges from 8 mm to 15 mm. Accordingly, a method of manufacturing an amorphous silicon-based thin film photoelectric conversion device having a superior performance is obtained with an improved efficiency in the use of raw material gas as well as an enhanced deposition rate to achieve improvements in cost and efficiency in production. Even if the dilution gas is not used, the advantages above can be achieved under the same conditions as those described above except for the condition concerning dilution gas.
摘要翻译： 在以下条件下沉积构成非晶硅系薄膜光电转换元件的p型半导体层，i型非晶硅系光电转换层和n型半导体层中的至少一种。 使用硅烷气体作为供给反应室的原料气体的主要成分和含有氢的稀释气体，稀释气体的流量为硅烷型气体的4倍以下，分压 等离子体CVD反应室中的硅烷型气体的范围为1.2Torr至5.0Torr，并且安装在阳极电极上的基板的表面与阴极电极的表面之间的距离为8mm至15mm。 因此，通过提高原料气体的使用效率和提高的沉积速度，可以获得具有优异性能的非晶硅系薄膜光电转换元件的制造方法，从而提高成本和生产效率。 即使不使用稀释气体，除了关于稀释气体的条件以外，在与上述相同的条件下可以实现上述优点。
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公开(公告)号：US08691613B2
公开(公告)日：2014-04-08
申请号：US13877148
申请日：2011-08-31
IPC分类号： H01L21/00
CPC分类号： H01L31/18 , H01L31/0684 , H01L31/0747 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A crystalline-based silicon photoelectric conversion device comprises: an intrinsic silicon-based layer and a silicon-based layer of a first conductivity type, on one surface of a single-crystal silicon substrate of the first conductivity type; and an intrinsic silicon-based and a silicon-based layer of an opposite conductivity type, in this order on the other surface of the silicon substrate. At least one of forming the intrinsic silicon-based layer of the first conductivity type layer-side forming the intrinsic silicon-based layer of the opposite conductivity type layer-side includes: forming a first intrinsic silicon-based thin-film layer having a thickness of 1-10 nm on the silicon substrate; plasma-treating the silicon substrate in a gas containing mainly hydrogen; and forming a second intrinsic silicon-based thin-film layer on the first intrinsic silicon-based thin-film.
摘要翻译： 晶体硅光电转换装置包括：在第一导电类型的单晶硅衬底的一个表面上的本征硅基层和第一导电类型的硅基层; 以及相反导电类型的本征硅基和硅基层，依次在硅衬底的另一表面上。 形成形成相反导电型层侧的本征硅基层的第一导电型层侧的本征硅基层中的至少一个包括：形成具有厚度的第一本征硅基薄膜层 在硅衬底上为1-10nm; 在主要包含氢气的气体中等离子体处理硅衬底; 以及在所述第一本征硅基薄膜上形成第二本征硅基薄膜层。
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