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公开(公告)号：US08878312B2
公开(公告)日：2014-11-04
申请号：US13195243
申请日：2011-08-01
申请人： Chia-Ming Hung , Hung-Sen Wang , Hsiang-Fu Chen , Te-Hsi Lee , Alex Kalnitsky , Wen-Chuan Tai , Kuei-Sung Chang , Yi Heng Tsai
发明人： Chia-Ming Hung , Hung-Sen Wang , Hsiang-Fu Chen , Te-Hsi Lee , Alex Kalnitsky , Wen-Chuan Tai , Kuei-Sung Chang , Yi Heng Tsai
CPC分类号： B81C1/00579 , B81B2207/015 , B81C2203/0771 , Y10T29/49126
摘要： An apparatus including a bypass structure for complementary metal-oxide-semiconductor (CMOS) and/or microelectromechanical system (MEMS) devices, and method for fabricating such apparatus, is disclosed. An exemplary apparatus includes a first substrate; a second substrate that includes a MEMS device; an insulator disposed between the first substrate and the second substrate; and an electrical bypass structure disposed in the insulator layer that contacts a portion of the first substrate, wherein the electrical bypass structure is electrically isolated from the MEMS device in the second substrate and any device included in the first substrate.
摘要翻译： 公开了一种包括用于互补金属氧化物半导体（CMOS）和/或微机电系统（MEMS）器件）的旁路结构的装置及其制造方法。 示例性装置包括第一基板; 包括MEMS器件的第二衬底; 设置在所述第一基板和所述第二基板之间的绝缘体; 以及设置在所述绝缘体层中的电旁路结构，其接触所述第一衬底的一部分，其中所述电旁路结构与所述第二衬底中的所述MEMS器件和所述第一衬底中包括的任何器件电隔离。
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公开(公告)号：US08237263B2
公开(公告)日：2012-08-07
申请号：US12651002
申请日：2009-12-31
申请人： Ting-Hau Wu , Chun-Ren Cheng , Chun-Wen Cheng , Jiou-Kang Lee , Jung-Huei Peng , Shang-Ying Tsai , Te-Hsi Lee
发明人： Ting-Hau Wu , Chun-Ren Cheng , Chun-Wen Cheng , Jiou-Kang Lee , Jung-Huei Peng , Shang-Ying Tsai , Te-Hsi Lee
IPC分类号： H01L23/34
CPC分类号： H01L23/427 , B81B7/0093 , B81B2207/99 , F28D15/02 , F28F3/048 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit, a method of operating the integrated circuit, and a method of fabricating the integrated circuit are disclosed. According to one of the broader forms of the invention, a method and apparatus involve an integrated circuit that includes a heat transfer structure having a chamber that has a fluid disposed therein and that extends between a heat generating portion and a heat absorbing portion. Heat is absorbed into the fluid from the heat generating portion, and the fluid changes from a first phase to a second phase different from the first phase when the heat is absorbed. Heat is released from the fluid to the heat absorbing portion, and the fluid changes from the second phase to the first phase when the heat is released.
摘要翻译： 公开了集成电路，操作集成电路的方法以及制造集成电路的方法。 根据本发明的一个更广泛的形式，一种方法和装置包括集成电路，该集成电路包括一个传热结构，该传热结构具有一个具有设置在其中的流体并且在发热部分和吸热部分之间延伸的腔室。 热量从发热部分吸收到流体中，并且当热被吸收时，流体从第一相位变化到与第一相位不同的第二相位。 热量从流体释放到吸热部分，并且当释放热量时，流体从第二相变为第一相。
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公开(公告)号：US20120223613A1
公开(公告)日：2012-09-06
申请号：US13195243
申请日：2011-08-01
申请人： Chia-Ming Hung , Hung-Sen Wang , Hsiang-Fu Chen , Te-Hsi Lee , Alex Kalnitsky , Wen-Chuan Tai , Kuei-Sung Chang , Yi Heng Tsai
发明人： Chia-Ming Hung , Hung-Sen Wang , Hsiang-Fu Chen , Te-Hsi Lee , Alex Kalnitsky , Wen-Chuan Tai , Kuei-Sung Chang , Yi Heng Tsai
CPC分类号： B81C1/00579 , B81B2207/015 , B81C2203/0771 , Y10T29/49126
摘要： An apparatus including a bypass structure for complementary metal-oxide-semiconductor (CMOS) and/or microelectromechanical system (MEMS) devices, and method for fabricating such apparatus, is disclosed. An exemplary apparatus includes a first substrate; a second substrate that includes a MEMS device; an insulator disposed between the first substrate and the second substrate; and an electrical bypass structure disposed in the insulator layer that contacts a portion of the first substrate, wherein the electrical bypass structure is electrically isolated from the MEMS device in the second substrate and any device included in the first substrate.
摘要翻译： 公开了一种包括用于互补金属氧化物半导体（CMOS）和/或微机电系统（MEMS）器件）的旁路结构的装置及其制造方法。 示例性装置包括第一基板; 包括MEMS器件的第二衬底; 设置在所述第一基板和所述第二基板之间的绝缘体; 以及设置在所述绝缘体层中的电旁路结构，其接触所述第一衬底的一部分，其中所述电旁路结构与所述第二衬底中的所述MEMS器件和所述第一衬底中包括的任何器件电隔离。
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公开(公告)号：US20110156245A1
公开(公告)日：2011-06-30
申请号：US12651002
申请日：2009-12-31
申请人： Ting-Hau Wu , Chun-Ren Cheng , Chun-Wen Cheng , Jiou-Kang Lee , Jung-Huei Peng , Shang-Ying Tsai , Te-Hsi Lee
发明人： Ting-Hau Wu , Chun-Ren Cheng , Chun-Wen Cheng , Jiou-Kang Lee , Jung-Huei Peng , Shang-Ying Tsai , Te-Hsi Lee
CPC分类号： H01L23/427 , B81B7/0093 , B81B2207/99 , F28D15/02 , F28F3/048 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit, a method of operating the integrated circuit, and a method of fabricating the integrated circuit are disclosed. According to one of the broader forms of the invention, a method and apparatus involve an integrated circuit that includes a heat transfer structure having a chamber that has a fluid disposed therein and that extends between a heat generating portion and a heat absorbing portion. Heat is absorbed into the fluid from the heat generating portion, and the fluid changes from a first phase to a second phase different from the first phase when the heat is absorbed. Heat is released from the fluid to the heat absorbing portion, and the fluid changes from the second phase to the first phase when the heat is released.
摘要翻译： 公开了集成电路，操作集成电路的方法以及制造集成电路的方法。 根据本发明的一个更广泛的形式，一种方法和装置包括集成电路，该集成电路包括一个传热结构，该传热结构具有一个具有设置在其中的流体并且在发热部分和吸热部分之间延伸的腔室。 热量从发热部分吸收到流体中，并且当吸收热量时，流体从第一相位变化到与第一相位不同的第二相位。 热量从流体释放到吸热部分，并且当释放热量时，流体从第二相变为第一相。
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公开(公告)号：US20070095381A1
公开(公告)日：2007-05-03
申请号：US11260108
申请日：2005-10-28
申请人： Te-Hsi Lee
发明人： Te-Hsi Lee
IPC分类号： H01L35/02
摘要： A thermoelectric device comprises a substrate comprising a thermal insulating region and a thermal conductive region, in which a dielectric layer is formed on the substrate of the thermal insulating region and a thermal insulating cavity formed between the substrate and the overlying-dielectric layer. A stack structure overlies the substrate of the thermal insulating and conductive regions comprising a plurality of thermoelectric material layers insulated from each other. First and second interconnect structures overlie the substrate of the thermal insulating and conductive regions, respectively, electrically connecting the stack structure. A method for fabricating the same is also disclosed.
摘要翻译： 热电装置包括：基板，其包括绝热区域和导热区域，其中介电层形成在绝热区域的基板上，以及形成在基板和上覆电介质层之间的绝热腔体。 堆叠结构覆盖着包括彼此绝缘的多个热电材料层的绝热和导电区域的衬底。 第一和第二互连结构分别覆盖绝热和导电区域的基板，电连接堆叠结构。 还公开了一种制造该方法的方法。
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