公开(公告)号：US08878312B2

公开(公告)日：2014-11-04

申请号：US13195243

申请日：2011-08-01

申请人： Chia-Ming Hung ,  Hung-Sen Wang ,  Hsiang-Fu Chen ,  Te-Hsi Lee ,  Alex Kalnitsky ,  Wen-Chuan Tai ,  Kuei-Sung Chang ,  Yi Heng Tsai

发明人： Chia-Ming Hung ,  Hung-Sen Wang ,  Hsiang-Fu Chen ,  Te-Hsi Lee ,  Alex Kalnitsky ,  Wen-Chuan Tai ,  Kuei-Sung Chang ,  Yi Heng Tsai

IPC分类号： H01L29/84 ,  B81C1/00

CPC分类号： B81C1/00579 ,  B81B2207/015 ,  B81C2203/0771 ,  Y10T29/49126

摘要： An apparatus including a bypass structure for complementary metal-oxide-semiconductor (CMOS) and/or microelectromechanical system (MEMS) devices, and method for fabricating such apparatus, is disclosed. An exemplary apparatus includes a first substrate; a second substrate that includes a MEMS device; an insulator disposed between the first substrate and the second substrate; and an electrical bypass structure disposed in the insulator layer that contacts a portion of the first substrate, wherein the electrical bypass structure is electrically isolated from the MEMS device in the second substrate and any device included in the first substrate.

摘要翻译： 公开了一种包括用于互补金属氧化物半导体（CMOS）和/或微机电系统（MEMS）器件）的旁路结构的装置及其制造方法。 示例性装置包括第一基板; 包括MEMS器件的第二衬底; 设置在所述第一基板和所述第二基板之间的绝缘体; 以及设置在所述绝缘体层中的电旁路结构，其接触所述第一衬底的一部分，其中所述电旁路结构与所述第二衬底中的所述MEMS器件和所述第一衬底中包括的任何器件电隔离。

公开(公告)号：US20120223613A1

公开(公告)日：2012-09-06

申请号：US13195243

申请日：2011-08-01

申请人： Chia-Ming Hung ,  Hung-Sen Wang ,  Hsiang-Fu Chen ,  Te-Hsi Lee ,  Alex Kalnitsky ,  Wen-Chuan Tai ,  Kuei-Sung Chang ,  Yi Heng Tsai

发明人： Chia-Ming Hung ,  Hung-Sen Wang ,  Hsiang-Fu Chen ,  Te-Hsi Lee ,  Alex Kalnitsky ,  Wen-Chuan Tai ,  Kuei-Sung Chang ,  Yi Heng Tsai

IPC分类号： H02N11/00 ,  H05K3/36

CPC分类号： B81C1/00579 ,  B81B2207/015 ,  B81C2203/0771 ,  Y10T29/49126

摘要： An apparatus including a bypass structure for complementary metal-oxide-semiconductor (CMOS) and/or microelectromechanical system (MEMS) devices, and method for fabricating such apparatus, is disclosed. An exemplary apparatus includes a first substrate; a second substrate that includes a MEMS device; an insulator disposed between the first substrate and the second substrate; and an electrical bypass structure disposed in the insulator layer that contacts a portion of the first substrate, wherein the electrical bypass structure is electrically isolated from the MEMS device in the second substrate and any device included in the first substrate.

摘要翻译： 公开了一种包括用于互补金属氧化物半导体（CMOS）和/或微机电系统（MEMS）器件）的旁路结构的装置及其制造方法。 示例性装置包括第一基板; 包括MEMS器件的第二衬底; 设置在所述第一基板和所述第二基板之间的绝缘体; 以及设置在所述绝缘体层中的电旁路结构，其接触所述第一衬底的一部分，其中所述电旁路结构与所述第二衬底中的所述MEMS器件和所述第一衬底中包括的任何器件电隔离。

公开(公告)号：US08716852B2

公开(公告)日：2014-05-06

申请号：US13399903

申请日：2012-02-17

申请人： Chia-Pao Shu ,  Chia-Ming Hung ,  Wen-Chuan Tai ,  Hung-Sen Wang ,  Hsiang-Fu Chen ,  Alex Kalnitsky

发明人： Chia-Pao Shu ,  Chia-Ming Hung ,  Wen-Chuan Tai ,  Hung-Sen Wang ,  Hsiang-Fu Chen ,  Alex Kalnitsky

IPC分类号： H01L23/26 ,  H01L21/54

CPC分类号： B81B7/0032 ,  B81B7/0038 ,  B81C1/00261 ,  H01L2924/0002 ,  H01L2924/00

摘要： A device includes a capping substrate bonded with a substrate structure. The substrate structure includes an integrated circuit structure. The integrated circuit structure includes a top metallic layer disposed on an outgasing prevention structure. At least one micro-electro mechanical system (MEMS) device is disposed over the top metallic layer and the outgasing prevention structure.

摘要翻译： 一种器件包括与衬底结构接合的封盖衬底。 衬底结构包括集成电路结构。 集成电路结构包括设置在防止结构上的顶部金属层。 至少一个微电子机械系统（MEMS）装置设置在顶部金属层和防止外部结构上。

公开(公告)号：US09365416B2

公开(公告)日：2016-06-14

申请号：US13433906

申请日：2012-03-29

申请人： Chia-Pao Shu ,  Wen-Chuan Tai ,  Chia-Ming Hung ,  Hsiang-Fu Chen

发明人： Chia-Pao Shu ,  Wen-Chuan Tai ,  Chia-Ming Hung ,  Hsiang-Fu Chen

IPC分类号： H01L29/84 ,  B81C1/00

CPC分类号： B81C1/00269 ,  B81C2203/036

摘要： The present disclosure provides one embodiment of a motion sensor structure. The motion sensor structure includes a first substrate having an integrated circuit formed thereon; a second substrate bonded to the first substrate from a first surface, wherein the second substrate includes a motion sensor formed thereon; and a third substrate bonded to a second surface of the second substrate, wherein the third substrate includes a recessed region aligned with the motion sensor.

摘要翻译： 本公开提供了运动传感器结构的一个实施例。 运动传感器结构包括其上形成有集成电路的第一基板; 第二基板，其从第一表面接合到第一基板，其中第二基板包括形成在其上的运动传感器; 以及第三基板，其接合到所述第二基板的第二表面，其中所述第三基板包括与所述运动传感器对准的凹陷区域。

公开(公告)号：US20130043510A1

公开(公告)日：2013-02-21

申请号：US13433906

申请日：2012-03-29

申请人： Chia-Pao Shu ,  Wen-Chuan Tai ,  Chia-Ming Hung ,  Hsiang-Fu Chen

发明人： Chia-Pao Shu ,  Wen-Chuan Tai ,  Chia-Ming Hung ,  Hsiang-Fu Chen

IPC分类号： H01L29/84 ,  H01L21/50

CPC分类号： B81C1/00269 ,  B81C2203/036

摘要： The present disclosure provides one embodiment of a motion sensor structure. The motion sensor structure includes a first substrate having an integrated circuit formed thereon; a second substrate bonded to the first substrate from a first surface, wherein the second substrate includes a motion sensor formed thereon; and a third substrate bonded to a second surface of the second substrate, wherein the third substrate includes a recessed region aligned with the motion sensor.

摘要翻译： 本公开提供了运动传感器结构的一个实施例。 运动传感器结构包括其上形成有集成电路的第一基板; 第二基板，其从第一表面接合到第一基板，其中第二基板包括形成在其上的运动传感器; 以及第三基板，其接合到所述第二基板的第二表面，其中所述第三基板包括与所述运动传感器对准的凹陷区域。

公开(公告)号：US08723280B2

公开(公告)日：2014-05-13

申请号：US13563935

申请日：2012-08-01

申请人： Chia-Pao Shu ,  Wen-Chuan Tai ,  Chia-Ming Hung ,  Hsiang-Fu Chen

发明人： Chia-Pao Shu ,  Wen-Chuan Tai ,  Chia-Ming Hung ,  Hsiang-Fu Chen

IPC分类号： H01L29/82

CPC分类号： B81C1/00015 ,  B81B3/00 ,  B81B3/001 ,  B81B7/02 ,  B81C99/00 ,  H01L29/84

摘要： A micro-electro-mechanical systems (MEMS) device and method for forming a MEMS device is provided. A proof mass is suspended a distance above a surface of a substrate by a fulcrum. A pair of sensing plates are positioned on the substrate on opposing sides of the fulcrum. Metal bumps are associated with each sensing plate and positioned near a respective distal end of the proof mass. Each metal bump extends from the surface of the substrate and generally inhibits charge-induced stiction associated with the proof mass. Oxide bumps are associated with each of the pair of sensing plates and positioned between the respective sensing plate and the fulcrum. Each oxide bump extends from the first surface of the substrate a greater distance than the metal bumps and acts as a shock absorber by preventing the distal ends of the proof mass from contacting the metal bumps during shock loading.

摘要翻译： 提供了一种用于形成MEMS器件的微电子机械系统（MEMS）器件和方法。 通过支点将检测质量悬挂在基板的表面上方的距离处。 一对感测板位于支撑体的相对侧上的基板上。 金属凸块与每个感测板相关联并且定位在检验质量块的相应远端附近。 每个金属凸起从衬底的表面延伸，并且通常抑制与校准质量相关联的电荷诱导的静电。 氧化物凸块与一对感测板中的每一个相关联并且位于相应的感测板和支点之间。 每个氧化物凸块从衬底的第一表面延伸出比金属凸块更大的距离，并且通过在冲击载荷期间防止校准质量块的远端接触金属凸块而用作减震器。

公开(公告)号：US20140035072A1

公开(公告)日：2014-02-06

申请号：US13563935

申请日：2012-08-01

申请人： Chia-Pao Shu ,  Wen-Chuan Tai ,  Chia-Ming Hung ,  Hsiang-Fu Chen

发明人： Chia-Pao Shu ,  Wen-Chuan Tai ,  Chia-Ming Hung ,  Hsiang-Fu Chen

IPC分类号： H01L29/84 ,  H01L21/02

CPC分类号： B81C1/00015 ,  B81B3/00 ,  B81B3/001 ,  B81B7/02 ,  B81C99/00 ,  H01L29/84

摘要： A micro-electro-mechanical systems (MEMS) device and method for forming a MEMS device is provided. A proof mass is suspended a distance above a surface of a substrate by a fulcrum. A pair of sensing plates are positioned on the substrate on opposing sides of the fulcrum. Metal bumps are associated with each sensing plate and positioned near a respective distal end of the proof mass. Each metal bump extends from the surface of the substrate and generally inhibits charge-induced stiction associated with the proof mass. Oxide bumps are associated with each of the pair of sensing plates and positioned between the respective sensing plate and the fulcrum. Each oxide bump extends from the first surface of the substrate a greater distance than the metal bumps and acts as a shock absorber by preventing the distal ends of the proof mass from contacting the metal bumps during shock loading.

公开(公告)号：US20060219924A1

公开(公告)日：2006-10-05

申请号：US11137456

申请日：2005-05-26

申请人： Tzong-Sheng Lee ,  Ping-Wei Lin ,  Hsiang-Fu Chen ,  Hung-Ti Li ,  Jeng-Long Ou

发明人： Tzong-Sheng Lee ,  Ping-Wei Lin ,  Hsiang-Fu Chen ,  Hung-Ti Li ,  Jeng-Long Ou

IPC分类号： G01J5/02

CPC分类号： G01J5/04 ,  G01J1/02 ,  G01J1/0252 ,  G01J5/045 ,  G01J5/061 ,  H01L27/14618 ,  H01L2224/48091 ,  H01L2924/00014

摘要： An infrared imaging sensor and a vacuum packaging method thereof are described. The infrared imaging sensor includes a ceramic base, a metal cap and an infrared filter. The ceramic base has an infrared imaging chip attached thereon and the metal cap includes a getter deposited on an inner surface of the metal cap. The infrared filter seals an opening of the metal cap. The ceramic base, the metal cap and the infrared filter are heated in a vacuum chamber to activate the getter, and to solder the ceramic base, the metal cap and the infrared filter together thereby vacuum packaging the infrared imaging sensor.

摘要翻译： 描述了红外成像传感器及其真空包装方法。 红外成像传感器包括陶瓷基座，金属帽和红外线过滤器。 陶瓷基座上安装有红外成像芯片，金属盖包括沉积在金属盖的内表面上的吸气剂。 红外线过滤器密封金属盖的开口。 陶瓷基座，金属帽和红外线过滤器在真空室中加热以激活吸气剂，并且将陶瓷基底，金属帽和红外线过滤器焊接在一起，从而真空包装红外成像传感器。

公开(公告)号：US20050011858A1

公开(公告)日：2005-01-20

申请号：US10622892

申请日：2003-07-16

申请人： Shyh-Chyi Kuo ,  Hsiang-Fu Chen

发明人： Shyh-Chyi Kuo ,  Hsiang-Fu Chen

IPC分类号： A61B5/15 ,  B44C1/22

CPC分类号： A61B5/14514 ,  A61B5/150022 ,  A61B5/150282 ,  A61B5/150389 ,  A61B5/150503 ,  A61B5/150984 ,  A61M2037/0053 ,  B81B2201/055 ,  B81C1/00111

摘要： A method for fabricating a hollow micro-needle array by first providing a silicon substrate; depositing a protective layer on the silicon substrate; defining a plurality of regions for wet etching; wet etching the silicon substrate forming a plurality of recesses that have inclined sidewalls; and continuing processing by electroplating, imaging/developing or micro-machining the plurality of recesses forming a hollow micro-needle array.

摘要翻译： 一种通过首先提供硅衬底制造中空微针阵列的方法; 在硅衬底上沉积保护层; 限定用于湿蚀刻的多个区域; 湿式蚀刻硅衬底，形成具有倾斜侧壁的多个凹部; 以及通过电镀，成像/显影或微加工形成中空微针阵列的多个凹槽来进行连续加工。

公开(公告)号：US08309441B2

公开(公告)日：2012-11-13

申请号：US13176548

申请日：2011-07-05

申请人： Jiou-Kang Lee ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Ting-Hau Wu ,  Hsiang-Fu Chen

发明人： Jiou-Kang Lee ,  Chun-Ren Cheng ,  Shang-Ying Tsai ,  Ting-Hau Wu ,  Hsiang-Fu Chen

IPC分类号： H01L21/82

CPC分类号： B81C1/00111 ,  B81B2201/042 ,  B81B2203/0392 ,  B81B2203/04 ,  B81B2207/056 ,  B81C2201/019 ,  H01L2924/0002 ,  H01L2924/00

摘要： One embodiment is a method of forming a circuit structure. The method comprises forming a first amorphous layer over a substrate; forming a first glue layer over and adjoining the first amorphous layer; forming a second amorphous layer over and adjoining the first glue layer; and forming a plurality of posts separated from each other by removing a first portion of the first amorphous layer and a first portion of the second amorphous layer. At least some of the plurality of posts each comprises a second portion of the first amorphous layer, a first portion of the first glue layer, and a second portion of the second amorphous layer.

摘要翻译： 一个实施例是形成电路结构的方法。 该方法包括在衬底上形成第一非晶层; 在所述第一非晶层上方形成第一胶合层; 在所述第一胶层上形成第二非晶层; 以及通过去除所述第一非晶层的第一部分和所述第二非晶层的第一部分来形成彼此分离的多个柱。 所述多个柱中的至少一些各自包括所述第一非晶层的第二部分，所述第一胶合层的第一部分和所述第二非晶层的第二部分。