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11 条记录 (耗时 0.014 秒)

    Composition and method for damascene CMP
    1.
    发明申请
    Composition and method for damascene CMP 有权
    大马士革CMP的组成和方法

    公开(公告)号：US20080113589A1

    公开(公告)日：2008-05-15

    申请号：US11599199

    申请日：2006-11-13

    申请人： Paul Feeney ,  Sriram Anjur ,  Jeffrey Dysard

    发明人： Paul Feeney ,  Sriram Anjur ,  Jeffrey Dysard

    IPC分类号： B24B29/02 ,  B24B7/00 ,  C09K3/14

    CPC分类号： C09K3/1463 ,  B24B37/044 ,  C09K3/1409

    摘要： The invention provides a method of chemically-mechanically polishing a substrate having at least one feature defined thereon, wherein the feature has at least one dimension with a size W, with a chemical-mechanical polishing composition. The polishing composition comprises particles of an abrasive wherein the particles have a mean particle diameter DM wherein the mean particle diameter of the particles satisfies the equation: DM>W. The invention further provides a method of preparing the chemical-mechanical polishing composition.

    摘要翻译： 本发明提供了一种化学机械抛光具有其上限定的至少一个特征的基材的方法，其中所述特征具有尺寸为W的至少一个尺寸，具有化学机械抛光组合物。 抛光组合物包含研磨剂颗粒，其中颗粒具有平均粒径D M M，其中颗粒的平均粒径满足以下等式：D M M / W。 本发明还提供了一种制备化学 - 机械抛光组合物的方法。

    Compositions and methods for polishing silicon nitride materials
    3.
    发明授权
    Compositions and methods for polishing silicon nitride materials 有权
    用于研磨氮化硅材料的组合物和方法

    公开(公告)号：US08759216B2

    公开(公告)日：2014-06-24

    申请号：US11448205

    申请日：2006-06-07

    申请人： Jeffrey Dysard ,  Sriram Anjur ,  Timothy Johns ,  Zhan Chen

    发明人： Jeffrey Dysard ,  Sriram Anjur ,  Timothy Johns ,  Zhan Chen

    IPC分类号： H01L21/302 ,  H01L21/336 ,  C03C15/00 ,  C03C25/68

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

    摘要： The present invention provides a method for polishing silicon nitride-containing substrates. The method comprises abrading a surface of a silicon nitride substrate with a polishing composition, which comprises colloidal silica, at least one acidic component, and an aqueous carrier. The at least one acidic component has a pKa in the range of about 1 to 4.5. The composition has a pH in the range of about 0.5 pH units less than the pKa of the at least one acidic component to about 1.5 pH units greater than the pKa.

    摘要翻译： 本发明提供一种研磨含氮化硅的基板的方法。 该方法包括用抛光组合物研磨氮化硅衬底的表面，抛光组合物包括胶体二氧化硅，至少一种酸性组分和水性载体。 所述至少一种酸性组分的pKa在约1至4.5的范围内。 所述组合物的pH值比所述至少一种酸性组分的pKa小约0.5pH单位至大于pKa约1.5pH单位。

    Composition and method for damascene CMP
    5.
    发明授权
    Composition and method for damascene CMP 有权
    大马士革CMP的组成和方法

    公开(公告)号：US07837888B2

    公开(公告)日：2010-11-23

    申请号：US11599199

    申请日：2006-11-13

    申请人： Paul M. Feeney ,  Sriram Anjur ,  Jeffrey M. Dysard

    发明人： Paul M. Feeney ,  Sriram Anjur ,  Jeffrey M. Dysard

    IPC分类号： B24B29/02 ,  B24B7/00 ,  C09K3/14

    CPC分类号： C09K3/1463 ,  B24B37/044 ,  C09K3/1409

    摘要： The invention provides a method of chemically-mechanically polishing a substrate having at least one feature defined thereon, wherein the feature has at least one dimension with a size W, with a chemical-mechanical polishing composition. The polishing composition comprises particles of an abrasive wherein the particles have a mean particle diameter DM wherein the mean particle diameter of the particles satisfies the equation: DM>W. The invention further provides a method of preparing the chemical-mechanical polishing composition.

    摘要翻译： 本发明提供了一种化学机械抛光具有其上限定的至少一个特征的基材的方法，其中所述特征具有尺寸为W的至少一个尺寸，具有化学机械抛光组合物。 抛光组合物包含研磨剂颗粒，其中颗粒具有平均粒径DM，其中颗粒的平均粒径满足等式：DM> W。 本发明还提供了一种制备化学 - 机械抛光组合物的方法。

    Electrochemical-mechanical polishing system
    6.
    发明申请
    Electrochemical-mechanical polishing system 失效
    电化学机械抛光系统

    公开(公告)号：US20050274627A1

    公开(公告)日：2005-12-15

    申请号：US10865027

    申请日：2004-06-10

    申请人： Ian Wylie ,  Sriram Anjur

    发明人： Ian Wylie ,  Sriram Anjur

    IPC分类号： B24D13/14 ,  B23H3/00

    CPC分类号： B24B37/26 ,  Y10T428/24273 ,  Y10T428/24355 ,  Y10T428/24628 ,  Y10T428/24917

    摘要： Provided is a polishing apparatus and polishing pad, intended for polishing a substrate, and designed for improved flow and distribution of a polishing composition to the area of interaction between the pad and substrate. In one aspect, a polishing pad is provided having first and second pluralities of unidirectional pores configured to communicate polishing composition between the top and bottom surfaces of the pad. A cyclic flow of composition is established to continuously renew composition to the area of interaction between the pad and the substrate. In another aspect, a polishing apparatus is provided having a polishing composition transfer region between a polishing pad and a platen. Pores disposed through the pad communicate composition from the transfer region to the top surface. To facilitate directing the composition into the pores, the apparatus includes a plurality of protrusions protruding into the transfer region that are aligned with the pores.

    摘要翻译： 提供了用于抛光基底的抛光装置和抛光垫，并且被设计用于改善抛光组合物与垫和基底之间的相互作用区域的流动和分布。 在一个方面，提供了具有第一和第二多个单向孔的抛光垫，其被构造成在衬垫的顶表面和底表面之间连通抛光组合物。 建立循环流动的组合物以将组合物连续地更新到衬垫和衬底之间的相互作用区域。 另一方面，提供一种抛光装置，其具有在抛光垫和压板之间的抛光组合物转印区域。 通过衬垫布置的孔将组合物从转印区域传递到顶表面。 为了便于将组合物引导到孔中，该装置包括突出到与孔对准的转移区域中的多个突起。

    Compositions and methods for CMP of phase change alloys
    7.
    发明授权
    Compositions and methods for CMP of phase change alloys 有权
    相变合金CMP的组成和方法

    公开(公告)号：US07897061B2

    公开(公告)日：2011-03-01

    申请号：US11699129

    申请日：2007-01-29

    申请人： Jeffrey Dysard ,  Paul Feeney ,  Sriram Anjur

    发明人： Jeffrey Dysard ,  Paul Feeney ,  Sriram Anjur

    IPC分类号： C09K13/00

    CPC分类号： C23F3/06 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

    摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change alloy (PCA), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises not more than about 6 percent by weight of a particulate abrasive material in combination with an optional oxidizing agent, at least one chelating agent, and an aqueous carrier therefor. The chelating agent comprises a compound or combination of compounds capable of chelating a phase change alloy or component thereof (e.g., germanium, indium, antimony and/or tellurium species) that is present in the substrate, or chelating a substance that is formed from the PCA during polishing of the substrate with the CMP composition. A CMP method for polishing a phase change alloy-containing substrate utilizing the composition is also disclosed.

    摘要翻译： 本发明提供适用于抛光包含相变合金（PCA）如锗 - 锑 - 碲（GST）合金的基材的化学机械抛光（CMP）组合物。 组合物包含不超过约6重量％的颗粒磨料与任选的氧化剂，至少一种螯合剂及其水性载体的组合。 螯合剂包括能够螯合存在于底物中的相变合金或其组分（例如，锗，铟，锑和/或碲物质）的化合物或化合物的组合，或螯合由该底物形成的物质 PCA在用CMP组合物抛光衬底的过程中。 还公开了利用该组合物研磨含相变合金的基材的CMP方法。

    Compositions and methods for polishing silicon nitride materials
    10.
    发明申请
    Compositions and methods for polishing silicon nitride materials 有权
    用于研磨氮化硅材料的组合物和方法

    公开(公告)号：US20070298612A1

    公开(公告)日：2007-12-27

    申请号：US11448205

    申请日：2006-06-07

    申请人： Jeffrey Dysard ,  Sriram Anjur ,  Timothy Johns ,  Zhan Chen

    发明人： Jeffrey Dysard ,  Sriram Anjur ,  Timothy Johns ,  Zhan Chen

    IPC分类号： C03C15/00 ,  H01L21/302

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

    摘要： The present invention provides a method for polishing silicon nitride-containing substrates. The method comprises abrading a surface of a silicon nitride substrate with a polishing composition, which comprises colloidal silica, at least one acidic component, and an aqueous carrier. The at least one acidic component has a pKa in the range of about 1 to 4.5. The composition has a pH in the range of about 0.5 pH units less than the pKa of the at least one acidic component to about 1.5 pH units greater than the pKa.

    摘要翻译： 本发明提供一种研磨含氮化硅的基板的方法。 该方法包括用抛光组合物研磨氮化硅衬底的表面，抛光组合物包括胶体二氧化硅，至少一种酸性组分和水性载体。 所述至少一种酸性组分的pKa在约1至4.5的范围内。 所述组合物的pH值比所述至少一种酸性组分的pKa小约0.5pH单位至大于pKa约1.5pH单位。