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    GaN crystal substrate, fabricating method of GaN crystal substrate, and light-emitting device
    1.
    发明申请
    GaN crystal substrate, fabricating method of GaN crystal substrate, and light-emitting device 有权
    GaN晶体衬底，GaN晶体衬底的制造方法和发光器件

    公开(公告)号：US20080012025A1

    公开(公告)日：2008-01-17

    申请号：US11487321

    申请日：2006-07-17

    申请人： Toru Matsuoka ,  Kensaku Motoki

    发明人： Toru Matsuoka ,  Kensaku Motoki

    IPC分类号： H01L31/0312

    CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/04 ,  H01L33/0075

    摘要： A GaN crystal substrate is provided, which has a diameter of not less than 20 mm and a thickness of not less than 70 μm and not more than 450 μm, and has a light absorption coefficient of not less than 7 cm−1 and not more than 68 cm−1 for light in the wavelength range of not less than 375 nm and not more than 500 nm. A fabricating method of the GaN crystal substrate, and a light-emitting device fabricated using the GaN crystal substrate are also provided.

    摘要翻译： 提供一种GaN晶体基板，其直径不小于20mm，厚度不小于70μm，不大于450μm，光吸收系数不小于7cm -1 在不小于375nm且不大于500nm的波长范围内的光，对于不超过68cm -1的光，不超过68cm -1。 还提供了GaN晶体衬底的制造方法和使用该GaN晶体衬底制造的发光器件。

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09087712B2

    公开(公告)日：2015-07-21

    申请号：US13103353

    申请日：2011-05-09

    申请人： Toru Matsuoka

    发明人： Toru Matsuoka

    IPC分类号： H01L27/24 ,  H01L27/02 ,  H01L29/08 ,  H01L29/10 ,  H01L29/41 ,  H01L27/06 ,  H01L25/07 ,  H02M3/158

    CPC分类号： H01L27/0664 ,  H01L25/072 ,  H01L27/0203 ,  H01L27/24 ,  H01L27/2409 ,  H01L29/08 ,  H01L29/10 ,  H01L29/41 ,  H01L2924/0002 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H02M3/158 ,  H01L2924/00

    摘要： The present invention provides a semiconductor device capable of selecting a desired circuit (step-down circuit (or step-up/step-down circuit) and step-up circuit) on the user side at low cost. A semiconductor device according to the present invention includes a diode element and a switching element (IGBT). An anode terminal of the diode element and one main electrode terminal of the switching element are adjacently arranged at a predetermined distance from each other. In addition, a cathode terminal of the diode element and the other main electrode terminal of the switching element are adjacently arranged at another predetermined distance from each other.

    摘要翻译： 本发明提供能够以低成本在用户侧选择期望的电路（降压电路（升压/降压电路）和升压电路）的半导体器件。 根据本发明的半导体器件包括二极管元件和开关元件（IGBT）。 二极管元件的阳极端子和开关元件的一个主电极端子彼此以预定的距离相邻地布置。 此外，二极管元件的阴极端子和开关元件的另一个主电极端子彼此相邻地彼此预定距离相邻地布置。

    GaN crystal substrate, fabricating method of GaN crystal substrate, and light-emitting device
    5.
    发明授权
    GaN crystal substrate, fabricating method of GaN crystal substrate, and light-emitting device 有权
    GaN晶体衬底，GaN晶体衬底的制造方法和发光器件

    公开(公告)号：US07928447B2

    公开(公告)日：2011-04-19

    申请号：US11487321

    申请日：2006-07-17

    申请人： Toru Matsuoka ,  Kensaku Motoki

    发明人： Toru Matsuoka ,  Kensaku Motoki

    IPC分类号： H01L27/15

    CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/04 ,  H01L33/0075

    摘要： A GaN crystal substrate is provided, which has a diameter of not less than 20 mm and a thickness of not less than 70 μm and not more than 450 μm, and has a light absorption coefficient of not less than 7 cm−1 and not more than 68 cm−1 for light in the wavelength range of not less than 375 nm and not more than 500 nm. A fabricating method of the GaN crystal substrate, and a light-emitting device fabricated using the GaN crystal substrate are also provided.

    摘要翻译： 提供一种GaN晶体基板，其直径不小于20mm，厚度不小于70μm且不大于450μm，并且具有不小于7cm -1的光吸收系数，而不是更多 对于不小于375nm且不大于500nm的波长范围内的光，超过68cm -1。 还提供了GaN晶体衬底的制造方法和使用该GaN晶体衬底制造的发光器件。

    Disc player apparatus with upper and lower rollers for transporting and guiding a disc
    6.
    发明授权
    Disc player apparatus with upper and lower rollers for transporting and guiding a disc 失效
    具有用于传送和引导盘的上辊和下辊的盘播放器装置

    公开(公告)号：US07814504B2

    公开(公告)日：2010-10-12

    申请号：US11574832

    申请日：2005-09-05

    申请人： Shinichi Aoki ,  Yoichi Zenimoto ,  Toru Matsuoka

    发明人： Shinichi Aoki ,  Yoichi Zenimoto ,  Toru Matsuoka

    IPC分类号： G11B17/04

    CPC分类号： G11B17/028 ,  G11B17/0286 ,  G11B17/0404 ,  G11B17/051

    摘要： There is provided a disc player apparatus capable of transporting a disc (11) by holding the disc (11) between a lower roller (70) and an upper roller (80). The lower roller (70) and the upper roller (80) are rockably supported with respect to a main body (20a). A flat spring (210) which urges the upper roller (80) is attached to an upper case (200a) that is attached to the main body (20a). The urge of the flat spring (210) is applied via a roller support member (810) which supports the upper roller (80). The pressure is applied evenly to the upper roller (80), enabling to reduce diagonal travel of the disc for example, and to transport the disc smoothly.

    摘要翻译： 提供了一种能够通过将盘（11）保持在下辊（70）和上辊（80）之间来传送盘（11）的盘播放器装置。 下辊（70）和上辊（80）相对于主体（20a）可摆动地支撑。 推动上辊（80）的平板弹簧（210）附接到附接到主体（20a）的上壳体（200a）。 通过支撑上辊（80）的辊支撑构件（810）施加板簧（210）的冲击力。 压力均匀地施加到上辊（80），使得能够减小例如盘的对角行程，并平滑地输送盘。

    Lubricating oil composition
    7.
    发明授权
    Lubricating oil composition 失效
    润滑油组成

    公开(公告)号：US6010988A

    公开(公告)日：2000-01-04

    申请号：US152308

    申请日：1998-09-14

    申请人： Toru Matsuoka ,  Hisayuki Wada ,  Susumu Yoshida ,  Naozumi Arimoto

    发明人： Toru Matsuoka ,  Hisayuki Wada ,  Susumu Yoshida ,  Naozumi Arimoto

    IPC分类号： C10M163/00 ,  C10N10/04 ,  C10N30/00 ,  C10N30/04 ,  C10N30/08 ,  C10N30/10 ,  C10N40/04 ,  C10M141/10

    CPC分类号： C10M163/00 ,  C10M2207/024 ,  C10M2207/028 ,  C10M2207/262 ,  C10M2219/046 ,  C10M2219/089 ,  C10M2223/045

    摘要： A lubricating oil composition for a wet clutch, particularly for an automatic transmission, which comprises mineral oil, synthetic oil or a mixture thereof as a base oil, and which contains 0.1 to 4.0% by weight of at least one compound selected from the group consisting of calcium sulfonate and calcium phenate, 0.1 to 0.5% by weight of zinc dithiophosphate, and 0.1 to 1.5% by weight of a bisphenol antioxidant, each based on the total weight of the lubricating oil composition. The composition has excellent initial anti-shudder properties, anti-shudder properties of long duration, and good thermal-oxidative stability.

    摘要翻译： 一种用于湿式离合器，特别是用于自动变速器的润滑油组合物，其包含矿物油，合成油或其作为基础油的混合物，并且含有0.1至4.0重量％的至少一种选自以下的化合物： 的磺酸钙和酚钙，0.1〜0.5重量％的二硫代磷酸锌和0.1〜1.5重量％的双酚抗氧化剂，各自以润滑油组合物的总重量计。 该组合物具有优异的初始抗颤性能，持久性好的抗颤抖性，以及良好的热氧化稳定性。

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20120068329A1

    公开(公告)日：2012-03-22

    申请号：US13103353

    申请日：2011-05-09

    申请人： Toru MATSUOKA

    发明人： Toru MATSUOKA

    IPC分类号： H01L23/48

    CPC分类号： H01L27/0664 ,  H01L25/072 ,  H01L27/0203 ,  H01L27/24 ,  H01L27/2409 ,  H01L29/08 ,  H01L29/10 ,  H01L29/41 ,  H01L2924/0002 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H02M3/158 ,  H01L2924/00

    摘要： The present invention provides a semiconductor device capable of selecting a desired circuit (step-down circuit (or step-up/step-down circuit) and step-up circuit) on the user side at low cost. A semiconductor device according to the present invention includes a diode element and a switching element (IGBT). An anode terminal of the diode element and one main electrode terminal of the switching element are adjacently arranged at a predetermined distance from each other. In addition, a cathode terminal of the diode element and the other main electrode terminal of the switching element are adjacently arranged at another predetermined distance from each other.

    摘要翻译： 本发明提供能够以低成本在用户侧选择期望的电路（降压电路（升压/降压电路）和升压电路）的半导体器件。 根据本发明的半导体器件包括二极管元件和开关元件（IGBT）。 二极管元件的阳极端子和开关元件的一个主电极端子彼此以预定的距离相邻地布置。 此外，二极管元件的阴极端子和开关元件的另一个主电极端子彼此相邻地彼此预定距离相邻地布置。