公开(公告)号：US08223212B2

公开(公告)日：2012-07-17

申请号：US12341901

申请日：2008-12-22

申请人： Toshiyuki Ohno

发明人： Toshiyuki Ohno

IPC分类号： H04N5/228

CPC分类号： G03B5/00

摘要： The hand movement correction apparatus 10 which is capable of correcting hand movement includes: a position variation signal acquisition sections 13 and 17 that acquire a position variation signal; a gain controller 12 that controls the gain of the position variation signal; an exposure determination section 14 that determines whether exposure operation is in progress; a position variation signal switching section 14 that switches the position variation signal; and a hand movement amount calculation section 15 that calculates a hand movement correction amount based on the position variation signal.

摘要翻译： 能够修正手部移动的手部移动校正装置10包括：取得位置变化信号的位置变动信号取得部13,17; 增益控制器12，其控制位置变化信号的增益; 确定曝光操作是否正在进行的曝光判定部14; 位置变化信号切换部14，切换位置变化信号; 以及基于位置变化信号来计算手部移动校正量的手部移动量计算部15。

公开(公告)号：US20100085436A1

公开(公告)日：2010-04-08

申请号：US12532214

申请日：2008-02-18

申请人： Toshiyuki Ohno

发明人： Toshiyuki Ohno

IPC分类号： H04N5/228

CPC分类号： G03B5/00 ,  G03B2217/005 ,  H04N5/23248 ,  H04N2101/00

摘要： Provided is a hand movement correction apparatus that performs hand movement correction for an image pickup apparatus. The device acquires a variation signal representing the movement of the image pickup apparatus and acquires a first signal obtained by extracting a signal of a frequency not less than a predetermined frequency from the acquired variation signal. The device further acquires a second signal obtained by extracting a signal of a frequency not more than the predetermined frequency from the acquired variation signal and adding the extracted signal to the first signal. The device then switches signal output from the first signal to second signal at the timing at which the start of the exposure processing in the image pickup apparatus is determined and calculates a hand movement correction amount based on the output signal.

摘要翻译： 提供了一种用于图像拾取装置的手动校正装置的手动校正装置。 该装置获取表示图像拾取装置的移动的变化信号，并获取通过从获取的变化信号中提取不小于预定频率的频率的信号而获得的第一信号。 该装置还获取通过从获取的变化信号中提取不超过预定频率的频率的信号而获得的第二信号，并将提取的信号与第一信号相加。 然后，在确定图像摄取装置中的曝光处理开始的定时，装置将从第一信号输出的信号切换到第二信号，并基于输出信号计算手部移动校正量。

公开(公告)号：US20080288233A1

公开(公告)日：2008-11-20

申请号：US12111592

申请日：2008-04-29

申请人： Shogo Ishii ,  Toshiyuki Ohno

发明人： Shogo Ishii ,  Toshiyuki Ohno

IPC分类号： G06F9/455

CPC分类号： G06F17/5022 ,  G06F2217/86

摘要： An object of the present invention is to provide a simulator for verifying plural products with common hardware configuration, in which peripheral hardware that can be reused are constituted by hardware and other peripheral hardware is constituted by software simulator, and simulation method.A simulator comprises: a hardware section that includes a peripheral hardware configuration with a structure required for a CPU and OS to operate alone; a software section that simulates the operation of peripheral hardware other than hardware constituting the hardware section as a peripheral hardware model; and an interface board that connects the hardware section and software section.

摘要翻译： 本发明的一个目的是提供一种用于通过硬件构成可以重复使用的外围硬件的硬件构成的多个产品的模拟器，其他的外围硬件由软件模拟器和仿真方法构成。 模拟器包括：硬件部分，其包括具有CPU和OS单独操作所需的结构的外围硬件配置; 软件部分，其将构成硬件部分的硬件以外的外围硬件的操作模拟为外围硬件模型; 以及连接硬件部分和软件部分的接口板。

公开(公告)号：US06750477B2

公开(公告)日：2004-06-15

申请号：US10121623

申请日：2002-04-15

申请人： Tsutomu Yatsuo ,  Toshiyuki Ohno ,  Hidekatsu Onose ,  Saburo Oikawa

发明人： Tsutomu Yatsuo ,  Toshiyuki Ohno ,  Hidekatsu Onose ,  Saburo Oikawa

IPC分类号： H01L310312

CPC分类号： H01L29/7722 ,  H01L29/1608

摘要： In a static induction transistor, in addition to a first gate layer (4), a plurality of second gate layers (41) having a shallower depth and a narrower gap therebetween than those of the first gate layer (4) are provided in an area surrounded by the first gate layer (4), thereby an SiC static induction transistor with an excellent off characteristic is realized, while ensuring a required processing accuracy during production thereof.

摘要翻译： 在静电感应晶体管中，除了第一栅极层（4）之外，还具有与第一栅极层（4）相比具有较浅深度和间隔更窄的多个第二栅极层（41） 由第一栅极层（4）包围，从而实现具有优异的截止特性的SiC静态感应晶体管，同时确保其制造期间所需的加工精度。

公开(公告)号：US06566726B1

公开(公告)日：2003-05-20

申请号：US09516501

申请日：2000-03-01

申请人： Hidekatsu Onose ,  Tsutomu Yatsuo ,  Toshiyuki Ohno ,  Saburou Oikawa

发明人： Hidekatsu Onose ,  Tsutomu Yatsuo ,  Toshiyuki Ohno ,  Saburou Oikawa

IPC分类号： H01L2940

CPC分类号： H01L29/0615 ,  H02M7/003

摘要： To reduce the field intensity on the termination surface, almost not affecting the on-characteristic, a drift layer is made of two layers, an n-layer and n− layer, and a termination region is formed on the surface of the above n− layer. An impurity concentration ratio between the n− layer and the n-layer is less than 1:2, and the thickness of the n− layer is less than that of a source n+ layer. Reliability can be secured even in a high temperature operation.

摘要翻译： 为了降低终端表面上的场强，几乎不影响导通特性，漂移层由n层和n层两层构成，并且在上述n-层的表面上形成端接区， 层。 n层和n层之间的杂质浓度比小于1：2，n层的厚度小于源n +层的厚度。 即使在高温操作中也可以确保可靠性。

公开(公告)号：US5728481A

公开(公告)日：1998-03-17

申请号：US467317

申请日：1995-06-06

申请人： Masahiro Kasai ,  Yuzo Kozono ,  Yoko Kanke ,  Toshiyuki Ohno ,  Masanobu Hanazono

发明人： Masahiro Kasai ,  Yuzo Kozono ,  Yoko Kanke ,  Toshiyuki Ohno ,  Masanobu Hanazono

IPC分类号： G01H3/00 ,  G01R29/08 ,  G01R33/035 ,  G01R33/06 ,  G01R33/09 ,  G11B5/127 ,  H01F10/32 ,  H01L39/22 ,  H01L43/08 ,  G11B5/66

CPC分类号： B82Y25/00 ,  G01R33/093 ,  H01F10/3213 ,  Y10S428/90 ,  Y10T428/1121

摘要： A magnetic detecting device is constructed of a substrate, a first magnetic layer formed on the substrate, a first magnetic layer formed on the substrate, an intermediate layer containing an atom indicative of weak spincoupling and formed on the first magnetic film, and a second magnetic layer formed on the intermediate layer. The magnetic detecting device further comprises a unit or supplying a current through the first and second magnetic layers, and a unit for detecting a voltage generated between the first magnetic layer and the second magnetic layer while the current is supplied thereto.

摘要翻译： 磁性检测装置由基板，形成在基板上的第一磁性层，形成在基板上的第一磁性层，含有指示弱自旋耦合并形成在第一磁性膜上的原子的中间层构成，第二磁性层 层形成在中间层上。 磁检测装置还包括一个单元或者提供通过第一和第二磁性层的电流，以及用于检测在向其提供电流时在第一磁性层和第二磁性层之间产生的电压的单元。

公开(公告)号：US20090167879A1

公开(公告)日：2009-07-02

申请号：US12341901

申请日：2008-12-22

申请人： Toshiyuki Ohno

发明人： Toshiyuki Ohno

IPC分类号： H04N5/228

CPC分类号： G03B5/00

摘要： The hand movement correction apparatus 10 which is capable of correcting hand movement includes: a position variation signal acquisition sections 13 and 17 that acquire a position variation signal; a gain controller 12 that controls the gain of the position variation signal; an exposure determination section 14 that determines whether exposure operation is in progress; a position variation signal switching section 14 that switches the position variation signal; and a hand movement amount calculation section 15 that calculates a hand movement correction amount based on the position variation signal.

摘要翻译： 能够修正手部移动的手部移动校正装置10包括：取得位置变化信号的位置变动信号取得部13,17; 增益控制器12，其控制位置变化信号的增益; 确定曝光操作是否正在进行的曝光判定部14; 位置变化信号切换部14，切换位置变化信号; 以及基于位置变化信号来计算手部移动校正量的手部移动量计算部15。

公开(公告)号：US06180959B2

公开(公告)日：2001-01-30

申请号：US09061145

申请日：1998-04-16

申请人： Takayuki Iwasaki ,  Toshiyuki Ohno ,  Tsutomu Yatsuo

发明人： Takayuki Iwasaki ,  Toshiyuki Ohno ,  Tsutomu Yatsuo

IPC分类号： H01L29161

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/7392 ,  H01L29/7722 ,  H03K17/687

摘要： In a silicon carbide static induction transistor, at a surface part of a semiconductor substrate, a p-type gate region is formed partially overlapping a n-type source region, whereby the high accuracy in alignment between the gate region and the source region is not required, and the gate withstand voltage can be highly increased since the substrate is made of silicon carbide, which improves the yield of static induction transistors.

摘要翻译： 在碳化硅静电感应晶体管中，在半导体衬底的表面部分，形成与n型源极区域部分重叠的p型栅极区域，由此栅极区域与源极区域之间的高精度对准 并且栅极耐受电压可以高度增加，因为衬底由碳化硅制成，这提高了静电感应晶体管的产量。

公开(公告)号：US20080281576A1

公开(公告)日：2008-11-13

申请号：US12111603

申请日：2008-04-29

申请人： Toshiyuki Ohno ,  Akira Ishitsuka ,  Shogo Ishii

发明人： Toshiyuki Ohno ,  Akira Ishitsuka ,  Shogo Ishii

IPC分类号： G06G7/62

CPC分类号： G06F11/261

摘要： There is provided an interface board which synchronizes processings between a CPU board mounting a CPU and peripheral hardware models of peripheral hardware components modeled on a computer. The interface board connects a CPU board and a peripheral hardware simulator with each other. The CPU board has at least one CPU, and the peripheral hardware simulator simulates operation of at least one peripheral hardware component by a peripheral hardware model. The interface board includes: a wait instruction unit that receives an interruption notification from the CPU, then notifies the peripheral hardware model of the interruption notification, and sets the CPU into a wait state; and a release unit that releases the wait state in which the CPU has been set by the wait instruction unit, upon reception of an instruction to release the wait state from the peripheral hardware model which has been notified of the interruption notification.

摘要翻译： 提供了一个接口板，用于同步安装CPU的CPU板和在计算机上建模的外围硬件组件的外围硬件型号之间的处理。 接口板将CPU板和外围硬件模拟器相互连接。 CPU板具有至少一个CPU，并且外围硬件模拟器通过外围硬件模型模拟至少一个外围硬件组件的操作。 接口板包括：等待指令单元，其接收来自CPU的中断通知，然后向外围硬件模型通知中断通知，并将CPU设置为等待状态; 以及释放单元，当从已经通知了中断通知的外围硬件模型接收到释放等待状态的指令时，释放等待指令单元已经设置了CPU的等待状态。

公开(公告)号：US5736753A

公开(公告)日：1998-04-07

申请号：US521548

申请日：1995-08-30

申请人： Toshiyuki Ohno ,  Yohsuke Inoue ,  Daisuke Kawase ,  Yuzo Kozono ,  Takaya Suzuki ,  Tsutomu Yatsuo

发明人： Toshiyuki Ohno ,  Yohsuke Inoue ,  Daisuke Kawase ,  Yuzo Kozono ,  Takaya Suzuki ,  Tsutomu Yatsuo

IPC分类号： H01L21/04 ,  H01L29/24 ,  H01L29/78 ,  H01L29/808 ,  H01L31/0312 ,  H01L29/74 ,  H01L29/861

CPC分类号： H01L29/7802 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7801 ,  H01L29/7813 ,  H01L29/8083

摘要： To provide a field-effect transistor having a large power conversion capacity and its fabrication method by decreasing the leakage current between the source and the drain of a semiconductor device made of hexagonal-system silicon carbide when the gate voltage of the semiconductor device is turned off and also decreasing the electrical resistance of the semiconductor device when the gate voltage of the semiconductor device is turned on. The main current path of the field-effect transistor is formed so that the current flowing between the source and the drain of, for example, a field-effect transistor flows in the direction parallel with the {0001} plane and a channel forming plane is parallel with the {1120} plane. �Selected Drawing!FIG. 1

摘要翻译： 为了提供具有大的功率转换能力的场效应晶体管及其制造方法，当半导体器件的栅极电压被关断时，通过减小由六方晶系碳化硅制成的半导体器件的源极和漏极之间的漏电流 并且当半导体器件的栅极电压导通时也降低半导体器件的电阻。 形成场效应晶体管的主电流路径，使得在例如场效应晶体管的源极和漏极之间流动的电流沿与{0001}平面平行的方向流动，沟道形成面为 与{1120}平面平行。 [所选图]