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公开(公告)号：US08518865B2
公开(公告)日：2013-08-27
申请号：US12859624
申请日：2010-08-19
Applicant: Madhukar Bhaskara Rao , Gautam Banerjee , Thomas Michael Wieder , Yi-Chia Lee , Wen Dar Liu , Aiping Wu
Inventor： Madhukar Bhaskara Rao , Gautam Banerjee , Thomas Michael Wieder , Yi-Chia Lee , Wen Dar Liu , Aiping Wu
CPC classification number: G03F7/426 , C11D3/0073 , C11D7/06 , C11D7/261 , C11D7/3218 , C11D7/3281 , C11D7/5004 , C11D11/0047 , C23G1/22 , G03F7/425
Abstract: The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.
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公开(公告)号：US20130061882A1
公开(公告)日：2013-03-14
申请号：US13414339
申请日：2012-03-07
Applicant: Aiping Wu , Yi-Chia Lee , Wen Dar Liu , Machukar Bhaskara Rao , Gautam Banerjee
Inventor： Aiping Wu , Yi-Chia Lee , Wen Dar Liu , Machukar Bhaskara Rao , Gautam Banerjee
CPC classification number: C11D11/0047 , C11D3/0073 , C11D3/044 , C11D3/2034 , C11D3/2058 , C11D3/2086 , C11D3/28 , C11D3/30 , C11D3/43 , C11D7/06 , C11D7/261 , C11D7/265 , C11D7/3218 , C11D7/3281 , C11D7/5004 , C23G1/22
Abstract: A water-rich hydroxylamine formulation for photoresist and post-etch/post-ash residue removal in applications wherein a semiconductor substrate comprises aluminum. The cleaning composition comprises from about 2 to about 15% by wt. of hydroxylamine; from about 50 to about 80% by wt. of water; from about 0.01 to about 5.0% by wt. of a corrosion inhibitor; from about 5 to about 45% by wt. of a component selected from the group consisting of: an alkanolamine having a pKa
Abstract translation: 在半导体衬底包括铝的应用中，用于光致抗蚀剂和后蚀刻/后灰渣残留物去除的富水羟胺制剂。 清洁组合物包含约2至约15重量％ 的羟胺; 约50至约80重量％。 的水; 约0.01至约5.0重量％。 的腐蚀抑制剂; 约5至约45重量％。 选自：具有pKa <9.0的链烷醇胺，水混溶性溶剂及其混合物的组分。 这种组合物的使用对于Al基材显示出有效的清洁能力，最小的硅蚀刻，同时保护包含这两种材料的基材的铝。
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公开(公告)号：US08357646B2
公开(公告)日：2013-01-22
申请号：US12394183
申请日：2009-02-27
Applicant: Wen Dar Liu , Yi Chia Lee , Archie Liao , Madhukar Bhaskara Rao , Matthew I. Egbe , Chimin Sheu , Michael Walter Legenza
Inventor： Wen Dar Liu , Yi Chia Lee , Archie Liao , Madhukar Bhaskara Rao , Matthew I. Egbe , Chimin Sheu , Michael Walter Legenza
IPC: B08B3/00
Abstract: The present invention, in a preferred embodiment, is a photoresist stripper formulation, comprising: Hydroxylamine ; Water; a solvent selected from the group consisting of dimethylsulfoxide; N-methylpyrrrolidine; dimethylacetamide; dipropylene glycol monomethyl ether; monoethanolamine and mixtures thereof; a base selected from the group consisting of choline hydroxide, monoethanolamine, tetramethylammonium hydroxide; aminoethylethanolamine and mixtures thereof; a metal corrosion inhibitor selected from the group consisting of catechol, gallic acid, lactic acid, benzotriazole and mixtures thereof; and a bath life extending agent selected from the group consisting of glycerine, propylene glycol and mixtures thereof. The present invention is also a method for using formulations as exemplified in the preferred embodiment.
Abstract translation: 在优选实施方案中，本发明是光致抗蚀剂剥离剂制剂，其包含：羟胺; 水; 选自二甲基亚砜的溶剂; N-甲基吡咯烷; 二甲基乙酰胺 二丙二醇单甲醚; 单乙醇胺及其混合物; 选自氢氧化胆碱，单乙醇胺，四甲基氢氧化铵的碱的碱; 氨基乙基乙醇胺及其混合物; 选自儿茶酚，没食子酸，乳酸，苯并三唑及其混合物的金属腐蚀抑制剂; 以及选自甘油，丙二醇及其混合物的浴寿命延长剂。 本发明也是使用在优选实施方案中举例说明的配方的方法。
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公开(公告)号：US07078149B2
公开(公告)日：2006-07-18
申请号：US10264472
申请日：2002-10-03
Applicant: Wen-Dar Liu , Nae-Jen Wang , Wan-Chun Chen , Biing-Hwang Lin , Hui-Jen Chen , Hsin-Te Kuo
Inventor： Wen-Dar Liu , Nae-Jen Wang , Wan-Chun Chen , Biing-Hwang Lin , Hui-Jen Chen , Hsin-Te Kuo
IPC: G11B7/24
CPC classification number: G11B7/2492 , G11B7/2467 , G11B7/2472 , G11B7/2533 , G11B7/2534 , G11B7/2542 , G11B7/2585 , G11B7/259 , G11B7/2595 , G11B7/266 , G11B2007/24612
Abstract: A method for fabricating an optical recording medium is provided. A dye layer is formed on a molded substrate by spin-coating. A reflection layer is formed on the dye layer by sputtering so that the optical disc has enough reflection rate. The dye layer comprises a cyanine type dye and an azo metal chelate compound selected from the formula (I): wherein M is a metal ion; R1 is a hydrogen atom, a linear or branched alkyl group containing 1 to 6 carbon atoms, amino group, alkyl amino group or toluidinyl group; R2 is a hydrogen atom, a hydroxyl group, a halogen atom, an ether group, an ester group or a linear or branched alkyl group containing 1 to 6 carbon atoms; R3 is a hydrogen atom or a linear or branched alkyl group containing 1 to 6 carbon atoms; R4 is a hydrogen atom, a halogen atom or a linear or branched alkyl group containing 1 to 6 carbon atoms; A1 is a heterocyclic derivative group constituted by carbon atoms and nitrogen atoms.
Abstract translation: 提供一种制造光记录介质的方法。 通过旋涂在成型基板上形成染料层。 通过溅射在染料层上形成反射层，使得光盘具有足够的反射率。 染料层包含花青型染料和选自式（I）的偶氮金属螯合物：其中M是金属离子; R 1是氢原子，含有1至6个碳原子的直链或支链烷基，氨基，烷基氨基或甲苯基; R 2是氢原子，羟基，卤素原子，醚基，酯基或含有1至6个碳原子的直链或支链烷基; R3是氢原子或含有1至6个碳原子的直链或支链烷基; R4是氢原子，卤素原子或含有1至6个碳原子的直链或支链烷基; A1是由碳原子和氮原子构成的杂环衍生基团。
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Patent Agency Ranking
公开(公告)号：US06689872B2
公开(公告)日：2004-02-10
申请号：US10247051
申请日：2002-09-17
Applicant: Nae-Jen Wang , Ching-Huang Chen , Li-Ling Lin , Chao-Nan Kuo , Wen-Dar Liu , Wan-Chun Chen , Shyh-yeu Wang
Inventor： Nae-Jen Wang , Ching-Huang Chen , Li-Ling Lin , Chao-Nan Kuo , Wen-Dar Liu , Wan-Chun Chen , Shyh-yeu Wang
IPC: C09B4500
CPC classification number: C09B45/00 , G11B7/244 , G11B7/2467 , G11B7/249 , G11B7/2534 , G11B7/2595
Abstract: An optical recording medium dye is described. The optical recording medium dye is an azo metal chelate compound, wherein the azo metal chelate compound comprises the following structure: wherein R1 is a hydrogen atom, a C1-6 straight chain or branched alkyl group, an amino group, an alkylamino group or a tolylamino group; R2 is a hydrogen atom, a hydroxyl group, a halogen atom, an ether group, a C1-6 straight chain or branched alkyl group; R3 is a hydrogen atom, a C1-6 straight chain or branched alkyl group; R4 is a hydrogen atom, a C1-6 straight chain or branched alkyl group or a halogen atom; A3 is a residue forming a heterocyclic ring derivative together with a carbon atom and a nitrogen atom.
Abstract translation: 描述光记录介质染料。 光记录介质染料是偶氮金属螯合化合物，其中偶氮金属螯合化合物包括以下结构：其中R1是氢原子，C1-6直链或支链烷基，氨基，烷基氨基或 甲苯基氨基; R2是氢原子，羟基，卤原子，醚基，C1-6直链或支链烷基; R3是氢原子，C1-6直链或支链烷基; R4是氢原子，C1-6直链或支链烷基或卤素原子; A3是与碳原子和氮原子一起形成杂环衍生物的残基。
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公开(公告)号：US08889609B2
公开(公告)日：2014-11-18
申请号：US13414339
申请日：2012-03-07
Applicant: Aiping Wu , Yi-Chia Lee , Wen Dar Liu , Machukar Bhaskara Rao , Gautam Banerjee
Inventor： Aiping Wu , Yi-Chia Lee , Wen Dar Liu , Machukar Bhaskara Rao , Gautam Banerjee
IPC: C11D7/50 , C11D3/20 , C11D11/00 , C11D3/00 , C11D3/30 , C11D7/26 , C11D3/43 , C11D7/06 , C11D7/32 , C11D3/28 , C11D3/04
CPC classification number: C11D11/0047 , C11D3/0073 , C11D3/044 , C11D3/2034 , C11D3/2058 , C11D3/2086 , C11D3/28 , C11D3/30 , C11D3/43 , C11D7/06 , C11D7/261 , C11D7/265 , C11D7/3218 , C11D7/3281 , C11D7/5004 , C23G1/22
Abstract: A water-rich hydroxylamine formulation for photoresist and post-etch/post-ash residue removal in applications wherein a semiconductor substrate comprises aluminum. The cleaning composition comprises from about 2 to about 15% by wt. of hydroxylamine; from about 50 to about 80% by wt. of water; from about 0.01 to about 5.0% by wt. of a corrosion inhibitor; from about 5 to about 45% by wt. of a component selected from the group consisting of: an alkanolamine having a pKa
Abstract translation: 在半导体衬底包括铝的应用中，用于光致抗蚀剂和后蚀刻/后灰渣残留物去除的富水羟胺制剂。 清洁组合物包含约2至约15重量％ 的羟胺; 约50至约80重量％。 的水; 约0.01至约5.0重量％。 的腐蚀抑制剂; 约5至约45重量％。 选自：具有pKa <9.0的链烷醇胺，水混溶性溶剂及其混合物的组分。 这种组合物的使用对于Al基材显示出有效的清洁能力，最小的硅蚀刻，同时保护包含这两种材料的基材的铝。
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公开(公告)号：US20110212866A1
公开(公告)日：2011-09-01
申请号：US12859624
申请日：2010-08-19
Applicant: Madhukar Bhaskara Rao , Gautam Banerjee , Thomas Michael Wieder , Yi-Chia Lee , Wen Dar Liu , Aiping Wu
Inventor： Madhukar Bhaskara Rao , Gautam Banerjee , Thomas Michael Wieder , Yi-Chia Lee , Wen Dar Liu , Aiping Wu
CPC classification number: G03F7/426 , C11D3/0073 , C11D7/06 , C11D7/261 , C11D7/3218 , C11D7/3281 , C11D7/5004 , C11D11/0047 , C23G1/22 , G03F7/425
Abstract: The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.
Abstract translation: 本发明涉及富含水的配方及其使用方法，以去除体积光致抗蚀剂，后蚀刻和后残留物，来自Al后端的互连结构的残留物以及污染物。 制剂包含：羟胺; 含有烷基二羟基苯和羟基喹啉的混合物的腐蚀抑制剂; 链烷醇胺，水溶性溶剂或两者的组合; 和至少50重量％的水。
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公开(公告)号：US20090229629A1
公开(公告)日：2009-09-17
申请号：US12400332
申请日：2009-03-09
Applicant: Yi-Chia Lee , Wen Dar Liu , Archie Liao , Matthew I. Egbe , Madhukar Bhaskara Rao , Michael Walter Legenza , Chimin Sheu
Inventor： Yi-Chia Lee , Wen Dar Liu , Archie Liao , Matthew I. Egbe , Madhukar Bhaskara Rao , Michael Walter Legenza , Chimin Sheu
CPC classification number: G03F7/425 , G03F7/426 , H01L21/02057 , H01L21/31133
Abstract: The present invention is a chemical stripper formulation for removing photoresist and the residue of etching and ashing of electronic device substrates, comprising: deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride. The present invention is also a process for removing photoresist and the residue of etching and ashing of electronic device substrates by contacting the substrate with a formulation, comprising: deionized water, acetic acid, polyethylene glycol, dipropylene glycol monomethyl ether and ammonium fluoride.
Abstract translation: 本发明是用于去除光致抗蚀剂的化学汽提器配方以及电子器件衬底的蚀刻和灰化残留物，其包括：去离子水，乙酸，聚乙二醇，二丙二醇单甲醚和氟化铵。 本发明也是通过使基材与制剂接触来除去光致抗蚀剂和蚀刻和灰化残留物的方法，其包括：去离子水，乙酸，聚乙二醇，二丙二醇单甲醚和氟化铵。
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公开(公告)号：US20090227483A1
公开(公告)日：2009-09-10
申请号：US12394183
申请日：2009-02-27
Applicant: Wen Dar Liu , Yi Chia Lee , Archie Liao , Madhukar Bhaskara Rao , Matthew I. Egbe , Chimin Sheu , Michael Walter Legenza
Inventor： Wen Dar Liu , Yi Chia Lee , Archie Liao , Madhukar Bhaskara Rao , Matthew I. Egbe , Chimin Sheu , Michael Walter Legenza
IPC: G03F7/42
Abstract: The present invention, in a preferred embodiment, is a photoresist stripper formulation, comprising: Hydroxylamine ; Water; a solvent selected from the group consisting of dimethylsulfoxide; N-methylpyrrrolidine; dimethylacetamide; dipropylene glycol monomethyl ether; monoethanolamine and mixtures thereof; a base selected from the group consisting of choline hydroxide, monoethanolamine, tetramethylammonium hydroxide; aminoethylethanolamine and mixtures thereof; a metal corrosion inhibitor selected from the group consisting of catechol, gallic acid, lactic acid, benzotriazole and mixtures thereof; and a bath life extending agent selected from the group consisting of glycerine, propylene glycol and mixtures thereof. The present invention is also a method for using formulations as exemplified in the preferred embodiment.
Abstract translation: 在优选实施方案中，本发明是光致抗蚀剂剥离剂制剂，其包含：羟胺; 水; 选自二甲基亚砜的溶剂; N-甲基吡咯烷; 二甲基乙酰胺 二丙二醇单甲醚; 单乙醇胺及其混合物; 选自氢氧化胆碱，单乙醇胺，四甲基氢氧化铵的碱的碱; 氨基乙基乙醇胺及其混合物; 选自儿茶酚，没食子酸，乳酸，苯并三唑及其混合物的金属腐蚀抑制剂; 以及选自甘油，丙二醇及其混合物的浴寿命延长剂。 本发明也是使用在优选实施方案中举例说明的配方的方法。
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