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    Composition for Coating over a Photoresist Pattern Comprising a Lactam
    2.
    发明申请
    Composition for Coating over a Photoresist Pattern Comprising a Lactam 有权
    用于在包含内酰胺的光致抗蚀剂图案上涂覆的组合物

    公开(公告)号：US20080248427A1

    公开(公告)日：2008-10-09

    申请号：US11697804

    申请日：2007-04-09

    Applicant: Muthiah Thiyagarajan ,  Ralph R. Dammel ,  Yi Cao ,  SungEun Hong ,  WenBing Kang ,  Clement Anyadiegwu

    Inventor： Muthiah Thiyagarajan ,  Ralph R. Dammel ,  Yi Cao ,  SungEun Hong ,  WenBing Kang ,  Clement Anyadiegwu

    IPC: G03C1/00

    CPC classification number: G03F7/40 ,  C09D139/00

    Abstract: The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) where R1 is independently selected hydrogen, C1-C4 alkyl, C1-C6 alkyl alcohol, hydroxy (OH), amine (NH2), carboxylic acid, and amide (CONH2), represents the attachment to the polymer, m=1-6, and n=1-4.The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.

    Abstract translation: 本发明涉及一种用于涂覆光致抗蚀剂图案的水性涂料组合物，其包含含有结构（1）的内酰胺基团的聚合物，其中R 1独立地选自氢，C 1〜 C 1 -C 4烷基，C 1 -C 6烷基醇，羟基（OH），胺（NH 2） ），羧酸和酰胺（CONH 2 2），表示与聚合物的连接，m = 1-6，n = 1-4。 本发明还涉及一种用于制造微电子器件的方法，包括提供具有光致抗蚀剂图案的基底，用新颖的涂层材料涂覆光致抗蚀剂图案，使一部分涂料与光致抗蚀剂图案接触，并且将一部分 不与去除溶液反应的涂料。

    RESIST PATTERN FORMATING METHOD
    3.
    发明申请
    RESIST PATTERN FORMATING METHOD 失效
    电阻图形化方法

    公开(公告)号：US20110241173A1

    公开(公告)日：2011-10-06

    申请号：US13131739

    申请日：2009-11-30

    Applicant: Wenbing Kang ,  Xiaowei Wang ,  Yuriko Matsuura

    Inventor： Wenbing Kang ,  Xiaowei Wang ,  Yuriko Matsuura

    IPC: H01L29/06 ,  G03F7/20

    CPC classification number: G03F7/38

    Abstract: The present invention provides a pattern formation method capable of preventing formation of surface defects. In the method, a resist surface after subjected to exposure is coated with an acidic film and then subjected to heating treatment. This method is suitably adopted in a process employing liquid immersion lithography and/or light of short wavelength, such as ArF excimer laser beams, for producing a very fine pattern.

    Abstract translation: 本发明提供能够防止形成表面缺陷的图案形成方法。 在该方法中，将曝光后的抗蚀剂表面涂覆有酸性膜，然后进行加热处理。 该方法适用于采用液浸式光刻法和/或短波长光源（例如ArF准分子激光束）的工艺，以产生非常精细的图案。

    SUBSTRATE TREATING SOLUTION AND METHOD EMPLOYING THE SAME FOR TREATING A RESIST SUBSTRATE
    4.
    发明申请
    SUBSTRATE TREATING SOLUTION AND METHOD EMPLOYING THE SAME FOR TREATING A RESIST SUBSTRATE 审中-公开
    基板处理方法及其使用方法，用于处理耐蚀基板

    公开(公告)号：US20110165523A1

    公开(公告)日：2011-07-07

    申请号：US13063666

    申请日：2009-09-14

    Applicant: Xiaowei Wang ,  Wenbing Kang ,  Tomohide Katayama ,  Yuriko Matsuura ,  Tohru Koike

    Inventor： Xiaowei Wang ,  Wenbing Kang ,  Tomohide Katayama ,  Yuriko Matsuura ,  Tohru Koike

    IPC: G03F7/32

    CPC classification number: G03F7/422

    Abstract: The present invention provides a resist substrate treating solution and a method employing the solution for treating a resist substrate. This treating solution enables to remove efficiently resist residues remaining on a surface of the resist substrate after development, and further to miniaturize a resist pattern. The solution is used for treating a resist substrate having a developed photoresist pattern, and comprises a solvent incapable of dissolving the photoresist pattern and a polymer soluble in the solvent. The developed resist substrate is brought into contact with the treating solution, and then washed with a rinse solution such as water to remove efficiently resist residues remaining on the resist substrate surface. The solvent and the polymer are preferably water and a water-soluble polymer, respectively.

    Abstract translation: 本发明提供一种抗蚀剂基板处理液和使用该抗蚀剂基板处理用溶液的方法。 该处理液能够有效地除去显影后残留在抗蚀剂基板的表面上的残留物，进一步使抗蚀剂图案小型化。 该溶液用于处理具有显影的光致抗蚀剂图案的抗蚀剂基板，并且包括不能溶解光致抗蚀剂图案的溶剂和可溶于溶剂的聚合物。 使显影的抗蚀剂基板与处理溶液接触，然后用诸如水的冲洗溶液洗涤以有效地除去残留在抗蚀剂基板表面上的残留物。 溶剂和聚合物分别优选为水和水溶性聚合物。

    Resist pattern formating method
    6.
    发明授权
    Resist pattern formating method 失效
    抗蚀图案形成方法

    公开(公告)号：US08618002B2

    公开(公告)日：2013-12-31

    申请号：US13131739

    申请日：2009-11-30

    Applicant: Wenbing Kang ,  Xiaowei Wang ,  Yuriko Matsuura

    Inventor： Wenbing Kang ,  Xiaowei Wang ,  Yuriko Matsuura

    IPC: H01L21/027

    CPC classification number: G03F7/38

    Abstract: The present invention provides a pattern formation method capable of preventing formation of surface defects. In the method, a resist surface after subjected to exposure is coated with an acidic film and then subjected to heating treatment. This method is suitably adopted in a process employing liquid immersion lithography and/or light of short wavelength, such as ArF excimer laser beams, for producing a very fine pattern.

    Abstract translation: 本发明提供能够防止形成表面缺陷的图案形成方法。 在该方法中，将曝光后的抗蚀剂表面涂覆有酸性膜，然后进行加热处理。 该方法适用于采用液浸式光刻法和/或短波长光源（例如ArF准分子激光束）的工艺，以产生非常精细的图案。

    Composition for Coating over a Photoresist Pattern Comprising a Lactam
    7.
    发明申请
    Composition for Coating over a Photoresist Pattern Comprising a Lactam 审中-公开
    用于在包含内酰胺的光致抗蚀剂图案上涂覆的组合物

    公开(公告)号：US20120219919A1

    公开(公告)日：2012-08-30

    申请号：US13033912

    申请日：2011-02-24

    Applicant: Muthiah Thiyagarajan ,  Ralph R. Dammel ,  Yi Cao ,  SungEun Hong ,  WenBing Kang ,  Clement Anyadiegwu

    Inventor： Muthiah Thiyagarajan ,  Ralph R. Dammel ,  Yi Cao ,  SungEun Hong ,  WenBing Kang ,  Clement Anyadiegwu

    IPC: G03F7/26

    CPC classification number: G03F7/405

    Abstract: The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) where R1 is independently selected hydrogen, C1-C4 alkyl, C1-C6 alkyl alcohol, hydroxy (OH), amine (NH2), carboxylic acid, and amide (CONH2), represents the attachment to the polymer, m=1-6, and n=1-4.The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.

    Abstract translation: 本发明涉及一种用于涂覆光致抗蚀剂图案的水性涂料组合物，其包含含有结构（1）的内酰胺基团的聚合物，其中R 1独立地选自氢，C 1 -C 4烷基，C 1 -C 6烷基醇，羟基（OH） （NH 2），羧酸和酰胺（CONH 2）表示与聚合物的连接，m = 1-6，n = 1-4。 本发明还涉及一种用于制造微电子器件的方法，包括提供具有光致抗蚀剂图案的基底，用新颖的涂层材料涂覆光致抗蚀剂图案，使一部分涂料与光致抗蚀剂图案接触，并且将一部分 不与去除溶液反应的涂料。

    Composition for coating over a photoresist pattern comprising a lactam
    8.
    发明授权
    Composition for coating over a photoresist pattern comprising a lactam 有权
    用于在包含内酰胺的光致抗蚀剂图案上涂覆的组合物

    公开(公告)号：US07923200B2

    公开(公告)日：2011-04-12

    申请号：US11697804

    申请日：2007-04-09

    Applicant: Muthiah Thiyagarajan ,  Ralph R. Dammel ,  Yi Cao ,  SungEun Hong ,  WenBing Kang ,  Clement Anyadiegwu

    Inventor： Muthiah Thiyagarajan ,  Ralph R. Dammel ,  Yi Cao ,  SungEun Hong ,  WenBing Kang ,  Clement Anyadiegwu

    IPC: G03F7/40

    CPC classification number: G03F7/40 ,  C09D139/00

    Abstract: The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) where R1 is independently selected hydrogen, C1-C4 alkyl, C1-C6 alkyl alcohol, hydroxy (OH), amine (NH2), carboxylic acid, and amide (CONH2),  represents the attachment to the polymer, m=1-6, and n=1-4. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.

    Abstract translation: 本发明涉及一种用于涂覆光致抗蚀剂图案的水性涂料组合物，其包含含有结构（1）的内酰胺基团的聚合物，其中R 1独立地选自氢，C 1 -C 4烷基，C 1 -C 6烷基醇，羟基（OH） （NH 2），羧酸和酰胺（CONH 2）表示与聚合物的连接，m = 1-6，n = 1-4。 本发明还涉及一种用于制造微电子器件的方法，包括提供具有光致抗蚀剂图案的基底，用新颖的涂层材料涂覆光致抗蚀剂图案，使一部分涂料与光致抗蚀剂图案接触，并且将一部分 不与去除溶液反应的涂料。

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