公开(公告)号：US06344305B1

公开(公告)日：2002-02-05

申请号：US09654350

申请日：2000-09-01

申请人： Qinghuang Lin ,  Ahmad D. Katnani ,  Douglas Charles LaTulipe, Jr. ,  David E. Seeger ,  William Ross Brunsvold ,  Ali Afzali-Ardakani

发明人： Qinghuang Lin ,  Ahmad D. Katnani ,  Douglas Charles LaTulipe, Jr. ,  David E. Seeger ,  William Ross Brunsvold ,  Ali Afzali-Ardakani

IPC分类号： G03F7004

CPC分类号： G03F7/0045 ,  G03F7/0757

摘要： A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid catalyzed high-contrast crosslinking of aqueous base soluble silicon-containing phenolic polymers through reaction of a carbocation of the crosslinking agent with the hydroxyl site of the phenolic group in the silicon-containing polymers. A chemically amplified silicon-containing negative-tone resist composition comprising said silicon-containing polymer resin; at least one crosslinking agent; one acid generator; and a solvent is provided. The silicon-containing resist composition has high silicon content and provide excellent resolution and a means of patterning high aspect ratio resist patterns. The resist compositions can be used as the top imaging layer in a multilayer, including bilayer, scheme to fabricate semiconductor devices using various irradiation sources, such as mid-ultraviolet (UV), deep-UV, extreme UV, X-ray, e-beam and ion-beam irradiation.

摘要翻译： 提供了一种高性能的含有辐射敏感性的含硅负光阻抗体以及使用含硅抗蚀剂的多层方法，包括用于制造半导体器件的双层成像。 负性含硅抗蚀剂基于通过交联剂的碳阳离子与含硅聚合物中酚基的羟基位置的反应而进行酸催化的高对比度交联的水溶性可溶性含硅酚醛聚合物 。 一种包含所述含硅聚合物树脂的化学放大的含硅负色调组合物; 至少一种交联剂; 一个酸发生器; 并提供溶剂。 含硅抗蚀剂组合物具有高硅含量并且提供优异的分辨率和构图高纵横比抗蚀剂图案的方法。 抗蚀剂组合物可以用作多层的顶部成像层，包括双层，使用各种照射源制造半导体器件的方案，例如中紫外（UV），深UV，极紫外，X射线， 光束和离子束照射。

公开(公告)号：US06187505B1

公开(公告)日：2001-02-13

申请号：US09241441

申请日：1999-02-02

申请人： Qinghuang Lin ,  Ahmad D. Katnani ,  Douglas Charles LaTulipe, Jr. ,  David E. Seeger ,  William Ross Brunsvold ,  Ali Afzali-Ardakani

发明人： Qinghuang Lin ,  Ahmad D. Katnani ,  Douglas Charles LaTulipe, Jr. ,  David E. Seeger ,  William Ross Brunsvold ,  Ali Afzali-Ardakani

IPC分类号： G03F7004

CPC分类号： G03F7/0045 ,  G03F7/0757

摘要： A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid catalyzed high-contrast crosslinking of aqueous base soluble silicon-containing phenolic polymers through reaction of a carbocation of the crosslinking agent with the hydroxyl site of the phenolic group in the silicon-containing polymers. A chemically amplified silicon-containing negative-tone resist composition comprising said silicon-containing polymer resin; at least one crosslinking agent; one acid generator; and a solvent is provided. The silicon-containing resist composition has high silicon content and provide excellent resolution and a means of patterning high aspect ratio resist patterns. The resist compositions can be used as the top imaging layer in a multilayer, including bilayer, scheme to fabricate semiconductor devices using various irradiation sources, such as mid-ultraviolet (UV), deep-UV, extreme UV, X-ray, e-beam and ion-beam irradiation.

摘要翻译： 提供了一种高性能的含有辐射敏感性的含硅负光阻抗体以及使用含硅抗蚀剂的多层方法，包括用于制造半导体器件的双层成像。 负性含硅抗蚀剂基于通过交联剂的碳阳离子与含硅聚合物中酚基的羟基位置的反应而进行酸催化的高对比度交联的水溶性可溶性含硅酚醛聚合物 。 一种包含所述含硅聚合物树脂的化学放大的含硅负色调组合物; 至少一种交联剂; 一个酸发生器; 并提供溶剂。 含硅抗蚀剂组合物具有高硅含量并且提供优异的分辨率和构图高纵横比抗蚀剂图案的方法。 抗蚀剂组合物可以用作多层的顶部成像层，包括双层，使用各种照射源制造半导体器件的方案，例如中紫外（UV），深UV，极紫外，X射线， 光束和离子束照射。

公开(公告)号：US06340734B1

公开(公告)日：2002-01-22

申请号：US09454563

申请日：1999-12-07

申请人： Qinghuang Lin ,  Marie Angelopoulos ,  Ahmad D. Katnani ,  Ratnam Sooriyakumaran

发明人： Qinghuang Lin ,  Marie Angelopoulos ,  Ahmad D. Katnani ,  Ratnam Sooriyakumaran

IPC分类号： C08G7706

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  Y10S430/128

摘要： Novel silsesquioxane polymers are formed by methods which avoid the use of BBr3. The novel silsesquioxane polymers are especially useful in negative photoresist compositions and photolithographic processes. Alternatively, improved silsesquioxane polymer-containing negative photoresist compositions are obtained by using a polymer component containing a blend of silsesquioxane polymer and non-silsesquioxane polymer. The photoresist compositions provide improved dissolution characteristics enabling the use of 0.26N TMAH developer. The photoresist compositions also provide improved thermal characteristics enabling use of higher processing temperatures. The photoresist compositions are especially useful in a multilayer photolithographic processes and are capable of producing high resolution.

摘要翻译： 通过避免使用BBr3的方法形成新的倍半硅氧烷聚合物。 新型倍半硅氧烷聚合物在负光致抗蚀剂组合物和光刻工艺中特别有用。 或者，通过使用含有倍半硅氧烷聚合物和非倍半硅氧烷聚合物的共混物的聚合物组分，可获得改进的含倍半硅氧烷聚合物的负性光致抗蚀剂组合物。 光致抗蚀剂组合物提供改进的溶解特性，使得能够使用0.26N TMAH显影剂。 光致抗蚀剂组合物还提供改善的热特性，使得能够使用较高的加工温度。 光致抗蚀剂组合物在多层光刻工艺中特别有用，并且能够产生高分辨率。

公开(公告)号：US06210856B1

公开(公告)日：2001-04-03

申请号：US09238823

申请日：1999-01-27

申请人： Qinghuang Lin ,  Timothy M. Hughes ,  George M. Jordhamo ,  Ahmad D. Katnani ,  Wayne M. Moreau ,  Niranjan Patel

发明人： Qinghuang Lin ,  Timothy M. Hughes ,  George M. Jordhamo ,  Ahmad D. Katnani ,  Wayne M. Moreau ,  Niranjan Patel

IPC分类号： G03C1725

CPC分类号： G03F7/0757 ,  G03F7/0045

摘要： A radiation sensitive resist composition exhibiting high resolution and enhanced etch resistance comprising a silicon containing polymeric additive, a non-silicon containing base polymer, a photoacid generator and a base is provided. A method of forming a patterned resist film is also provided. A resist film having an upper surface region enriched with silicon is also disclosed.

摘要翻译： 提供了显示高分辨率和增强的抗蚀性的辐射敏感抗蚀剂组合物，其包括含硅聚合物添加剂，不含硅的基础聚合物，光致酸产生剂和碱。 还提供了形成图案化抗蚀剂膜的方法。 还公开了具有富含硅的上表面区域的抗蚀剂膜。

公开(公告)号：US6087064A

公开(公告)日：2000-07-11

申请号：US146867

申请日：1998-09-03

申请人： Qinghuang Lin ,  Marie Angelopoulos ,  Ahmad D. Katnani ,  Ratnam Sooriyakumaran

发明人： Qinghuang Lin ,  Marie Angelopoulos ,  Ahmad D. Katnani ,  Ratnam Sooriyakumaran

IPC分类号： G03F7/004 ,  G03F7/075 ,  G03C1/725

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  Y10S430/128

摘要： Novel silsesquioxane polymers are formed by methods which avoid the use of BBr.sub.3. The novel silsesquioxane polymers are especially useful in negative photoresist compositions and photolithographic processes. Alternatively, improved silsesquioxane polymer-containing negative photoresist compositions are obtained by using a polymer component containing a blend of silsesquioxane polymer and non-silsesquioxane polymer. The photoresist compositions provide improved dissolution characteristics enabling the use of 0.26 N TMAH developer. The photoresist compositions also provide improved thermal characteristics enabling use of higher processing temperatures. The photoresist compositions are especially useful in a multilayer photolithographic processes and are capable of producing high resolution.

摘要翻译： 通过避免使用BBr3的方法形成新的倍半硅氧烷聚合物。 新型倍半硅氧烷聚合物在负光致抗蚀剂组合物和光刻工艺中特别有用。 或者，通过使用含有倍半硅氧烷聚合物和非倍半硅氧烷聚合物的共混物的聚合物组分，可获得改进的含倍半硅氧烷聚合物的负性光致抗蚀剂组合物。 光致抗蚀剂组合物提供改进的溶解特性，使得能够使用0.26N TMAH显影剂。 光致抗蚀剂组合物还提供改善的热特性，使得能够使用较高的加工温度。 光致抗蚀剂组合物在多层光刻工艺中特别有用，并且能够产生高分辨率。

公开(公告)号：US06303263B1

公开(公告)日：2001-10-16

申请号：US09030568

申请日：1998-02-25

申请人： Kuang-Jung Chen ,  Ronald A. DellaGuardia ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Mahmoud M. Khojasteh ,  Qinghuang Lin

发明人： Kuang-Jung Chen ,  Ronald A. DellaGuardia ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Mahmoud M. Khojasteh ,  Qinghuang Lin

IPC分类号： G03F7039

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/11 ,  Y10S430/111

摘要： The present invention is directed to a high-performance irradiation sensitive resists and to a polymer resin composition useful for making the same. In accordance to the present invention, the polymer resin comprises a dual blocked polymer resins. Specifically, the dual blocked polymer resin comprises at least two different acid labile protecting groups which block some, but not all, of the polar functional groups of the polymer resin. a chemically amplified resist system comprising said dual blocked polymer resin; at least one acid generator; and a solvent is also provided herein.

摘要翻译： 本发明涉及一种高性能的照射敏感抗蚀剂以及可用于制造它的聚合物树脂组合物。 根据本发明，聚合物树脂包含双嵌段聚合物树脂。 具体地，双嵌段聚合物树脂包含至少两种不同的酸不稳定保护基团，其阻挡聚合物树脂的一些但不是全部的极性官能团。 包含所述双嵌段聚合物树脂的化学放大抗蚀剂体系; 至少一种酸发生剂; 并且还提供了溶剂。

公开(公告)号：US6103447A

公开(公告)日：2000-08-15

申请号：US30566

申请日：1998-02-25

申请人： Kuang-Jung Chen ,  Ronald A. DellaGuardia ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Mahmoud M. Khojasteh ,  Qinghuang Lin

发明人： Kuang-Jung Chen ,  Ronald A. DellaGuardia ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Mahmoud M. Khojasteh ,  Qinghuang Lin

IPC分类号： G03F7/004 ,  G03F7/039

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/107 ,  Y10S430/111

摘要： The present invention is directed to a high-performance irradiation sensitive positive-tone resist and to a method of formulating the same. In one aspect, the polymer resin composition of the present invention comprises a blend of at least two miscible aqueous base soluble polymer resins, wherein one of said aqueous base soluble polymer resins of said blend is partially protected with a high activation energy protecting group and the other aqueous base soluble polymer resin of said blend is partially protected with a low activation energy protecting group. A chemically amplified resist system comprising said polymer resin composition; at least one acid generator; and a solvent is also provided herein.

摘要翻译： 本发明涉及一种高性能照射敏感正性抗蚀剂及其制备方法。 一方面，本发明的聚合物树脂组合物包含至少两种可混溶的水溶性可溶性聚合物树脂的共混物，其中所述共混物的所述水溶性基础可溶性聚合物树脂之一部分地被高活化能保护基保护，并且 所述共混物的其它水溶性可溶性聚合物树脂部分地被低活化能保护基团保护。 一种包含所述聚合物树脂组合物的化学放大抗蚀剂体系; 至少一种酸发生剂; 并且还提供了溶剂。

公开(公告)号：US09209126B2

公开(公告)日：2015-12-08

申请号：US13606788

申请日：2012-09-07

申请人： Qinghuang Lin ,  Sanjay Mehta ,  Hosadurga Shobha

发明人： Qinghuang Lin ,  Sanjay Mehta ,  Hosadurga Shobha

IPC分类号： H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC分类号： H01L23/5222 ,  H01L21/768 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76816 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L23/53295 ,  H01L2221/1026 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure and methods for making the same include sidewall portions of an interlevel dielectric layer. The sidewall portions have a width less than a minimum feature size for a given lithographic technology and the width is formed by a thickness of the interlevel dielectric layer when conformally formed on vertical surfaces of a mandrel. The sidewall portions form spaced-apart openings. Conductive structures fill the spaced-apart openings and are separated by the sidewall portions to form single damascene structures.

摘要翻译： 互连结构及其制造方法包括层间电介质层的侧壁部分。 侧壁部分具有小于给定平版印刷技术的最小特征尺寸的宽度，并且当在心轴的垂直表面上共形形成时，宽度由层间电介质层的厚度形成。 侧壁部分形成间隔开的开口。 导电结构填充间隔开的开口并且被侧壁部分分开以形成单个镶嵌结构。

公开(公告)号：US08637395B2

公开(公告)日：2014-01-28

申请号：US12619298

申请日：2009-11-16

申请人： Maxime Darnon ,  Qinghuang Lin

发明人： Maxime Darnon ,  Qinghuang Lin

IPC分类号： H01L21/4763

CPC分类号： H01L21/76804 ,  C08G77/04 ,  H01L21/02126 ,  H01L21/02318 ,  H01L21/31 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A single damascene or dual damascene interconnect structure fabricated with a photo-patternable low-k dielectric (PPLK) which is cured after etching. This method prevents the PPLK damage and the tapering of the edges of the interconnect structure. In one embodiment, the method of the present invention includes depositing a photo-patternable low-k (PPLK) material atop a substrate. The at least one PPLK material is patterned, creating a single damascene structure. For dual damascene structures, a second PPLK layer is coated and patterned. An etch process is performed to transfer the pattern from the PPLK material into at least a portion of the substrate. A diffusion liner and a conductive material can be deposited after the etch process. The resulting structure is cured anytime after etching in order to transform the resist like PPLK into a permanent low-k material that remains within the structure.

摘要翻译： 用蚀刻后固化的光可图案化低k电介质（PPLK）制造的单镶嵌或双镶嵌互连结构。 该方法防止了PPLK损坏和互连结构边缘的逐渐变细。 在一个实施例中，本发明的方法包括在衬底顶部沉积可光可编码的低k（PPLK）材料。 至少一个PPLK材料被图案化，形成单个镶嵌结构。 对于双镶嵌结构，涂覆和图案化第二PPLK层。 执行蚀刻工艺以将图案从PPLK材料转移到衬底的至少一部分中。 在蚀刻工艺之后可以沉积扩散衬垫和导电材料。 所得到的结构在蚀刻后随时固化，以将抗蚀剂像PPLK转变成保持在结构内的永久低k材料。

公开(公告)号：US08487411B2

公开(公告)日：2013-07-16

申请号：US13407141

申请日：2012-02-28

申请人： Qinghuang Lin

发明人： Qinghuang Lin

IPC分类号： H01L23/58

CPC分类号： H01L21/3105 ,  C08G77/04 ,  G03F7/0035 ,  G03F7/0757 ,  G03F7/091 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/28123 ,  H01L21/31 ,  H01L21/31144 ,  H01L21/3121

摘要： A double patterned semiconductor structure is provided. The structure includes a first patterned and cured low-k structure located on a first portion of an antireflective coating, and a second patterned and cured low-k structure located on a second portion of the antireflective coating, wherein the second patterned and cured low-k structure is spaced apart from the first patterned and cured low-k dielectric structure.

摘要翻译： 提供双重图案化的半导体结构。 该结构包括位于抗反射涂层的第一部分上的第一图案化和固化的低k结构，以及位于抗反射涂层的第二部分上的第二图案化和固化的低k结构，其中第二图案化和固化的低k结构， k结构与第一图案化和固化的低k电介质结构间隔开。