公开(公告)号：US20170243886A1

公开(公告)日：2017-08-24

申请号：US15592030

申请日：2017-05-10

申请人： Jung Hoon LEE ,  Keejeong RHO ,  Sejun PARK ,  Jinhyun SHIN ,  Dong-Sik LEE ,  Woong-Seop LEE

发明人： Jung Hoon LEE ,  Keejeong RHO ,  Sejun PARK ,  Jinhyun SHIN ,  Dong-Sik LEE ,  Woong-Seop LEE

IPC分类号： H01L27/11582 ,  G11C16/08 ,  H01L23/528

CPC分类号： H01L27/11582 ,  G11C16/08 ,  H01L23/528 ,  H01L27/11556 ,  H01L27/1157

摘要： A semiconductor device includes lower and upper selection lines, a cell gate structure, a lower dummy structure and an upper dummy structure. The cell gate structure is between the lower and upper selection lines and includes cell gate electrodes stacked in a first direction. The lower dummy structure is between the lower selection line and the cell gate structure and includes a lower dummy gate line spaced from a lowermost one of the cell gate electrodes by a first distance. The upper dummy structure is between the upper selection line and the cell gate structure and includes an upper dummy gate line spaced from an uppermost one of the cell gate electrodes by a second distance. The cell gate electrodes are spaced by a third distance less than each of the first and second distances.

公开(公告)号：US09525065B1

公开(公告)日：2016-12-20

申请号：US14979122

申请日：2015-12-22

申请人： Dong Min Kyeon ,  Woong Seop Lee ,  Jin Hyun Shin

发明人： Dong Min Kyeon ,  Woong Seop Lee ,  Jin Hyun Shin

IPC分类号： H01L29/66 ,  H01L21/20 ,  H01L29/78 ,  H01L27/115

CPC分类号： H01L29/7827 ,  H01L27/11556 ,  H01L27/11582

摘要： Semiconductor devices are provided. A semiconductor device includes a stack of gate electrodes. The semiconductor device includes a channel material in a channel recess in the stack. The semiconductor device includes a channel pad on the channel insulating layer. The channel pad has a curved upper surface. Methods of manufacturing semiconductor devices are also provided.

摘要翻译： 提供半导体器件。 半导体器件包括一堆栅电极。 半导体器件包括在堆叠中的通道凹槽中的沟道材料。 半导体器件包括沟道绝缘层上的沟道焊盘。 通道垫具有弯曲的上表面。 还提供了制造半导体器件的方法。

公开(公告)号：US09419013B1

公开(公告)日：2016-08-16

申请号：US14956539

申请日：2015-12-02

申请人： Dong Sik Lee ,  Woong Seop Lee ,  Seok Cheon Baek ,  Byung Jin Lee

发明人： Dong Sik Lee ,  Woong Seop Lee ,  Seok Cheon Baek ,  Byung Jin Lee

IPC分类号： H01L27/11 ,  H01L27/115 ,  H01L29/423 ,  H01L23/535

CPC分类号： H01L27/11582 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11575 ,  H01L29/42372

摘要： A semiconductor device, including gate electrodes perpendicularly stacked on a substrate; channel holes extending perpendicularly to the substrate, the channel holes penetrating through the gate electrodes, the channel holes having a channel region; gate pads extended from the gate electrodes by different lengths; and contact plugs connected to the gate pads, at least a portion of the gate pads having a region having a thickness less than a thickness of the gate electrode connected to the at least a portion of the gate pads.

摘要翻译： 一种半导体器件，包括垂直地堆叠在衬底上的栅电极; 所述通道孔垂直于所述基板延伸，所述通道孔贯穿所述栅电极，所述通道孔具有通道区域; 栅极焊盘从栅电极延伸不同长度; 以及连接到所述栅极焊盘的接触插塞，所述栅极焊盘的至少一部分具有厚度小于连接到所述栅极焊盘的至少一部分的所述栅电极的厚度的区域。