公开(公告)号：US20180123234A1

公开(公告)日：2018-05-03

申请号：US15417199

申请日：2017-01-26

Applicant: Chao Wang ,  Yongli Chen ,  Ya Wang

Inventor： Chao Wang ,  Yongli Chen ,  Ya Wang

IPC: H01Q1/48 ,  H01Q1/22

CPC classification number: H01Q1/48 ,  H01Q1/2291 ,  H01Q1/243 ,  H01Q9/42

Abstract: Provided is an antenna system, including a system ground unit, a metal back cover, a frame as antenna radiator, and a grounding circuit, a feeding circuit and a tuning switch, the antenna radiator includes a main radiator and an auxiliary radiator; the main radiator includes a first main radiator which forms, together with the metal back cover, a first main gap, a second main radiator extending from the first main radiator and forms, together with the metal back cover, a second main gap, and a first fracture separating the first main radiator into two parts; the auxiliary radiator includes a first auxiliary radiator which forms, together with the metal back cover, a first auxiliary gap, a second auxiliary radiator extending from the first auxiliary radiator and forms, together with the metal back cover, a second auxiliary gap, and a second fracture separating the first auxiliary radiator into two parts.

公开(公告)号：US09333218B2

公开(公告)日：2016-05-10

申请号：US13808741

申请日：2011-07-14

Applicant: Ya Wang ,  Baocheng Hu ,  Walter J. Curran

Inventor： Ya Wang ,  Baocheng Hu ,  Walter J. Curran

IPC: C12N15/11 ,  A61K31/7105 ,  A61K45/06 ,  C12N15/113 ,  A61N5/10 ,  C07H21/02

CPC classification number: A61K31/7105 ,  A61K45/06 ,  A61N5/10 ,  C07H21/02 ,  C12N15/113 ,  C12N2310/141 ,  C12N2320/31 ,  A61K2300/00

Abstract: The disclosure relates to microRNAs (miRNAs) for the prophylaxis and/or treatment of neoplasia. The disclosure relates in particular to sequence corresponding to miR2 and the miR-548 family, including precursors, mature forms, fragments, and combinations thereof for the prophylaxis and/or treatment of neoplasias, particularly lung, stomach, and cervical cancer, alone or in combination with additional cancer treatments and therapeutics.

Abstract translation: 本公开涉及用于预防和/或治疗瘤形成的微小RNA（miRNA）。 本公开特别涉及对应于miR2和miR-548家族的序列，包括用于预防和/或治疗肿瘤，特别是肺，胃和宫颈癌的前体，成熟形式，片段及其组合，单独或在 结合额外的癌症治疗和治疗。

公开(公告)号：US09200149B2

公开(公告)日：2015-12-01

申请号：US14354233

申请日：2012-10-26

Applicant: Jinliang Qiao ,  Yuexin Cong ,  Xiaohong Zhang ,  Ying Li ,  Jianming Gao ,  Qianmin Zhang ,  Zhihai Song ,  Yanling Sun ,  Jinmei Lai ,  Peijun Song ,  Chuanlun Cai ,  Guoxun Zhao ,  Hongbin Zhang ,  Guicun Qi ,  Ya Wang ,  Binghai Li

Inventor： Jinliang Qiao ,  Yuexin Cong ,  Xiaohong Zhang ,  Ying Li ,  Jianming Gao ,  Qianmin Zhang ,  Zhihai Song ,  Yanling Sun ,  Jinmei Lai ,  Peijun Song ,  Chuanlun Cai ,  Guoxun Zhao ,  Hongbin Zhang ,  Guicun Qi ,  Ya Wang ,  Binghai Li

IPC: C08L21/00 ,  C08L9/02 ,  C08L7/00 ,  C08L9/00 ,  C08L9/06 ,  C08F20/44 ,  B60C1/00

Abstract: The present application relates to a modified rubber masterbatch and preparation method thereof, rubber composition prepared therewith and vulcanized rubber and preparation method thereof. The modified rubber component comprises uncrosslinked rubber and rubber particles having crosslinked structure dispersed therein, wherein the rubber particles having crosslinked structure are synthetic rubber particles and/or natural rubber particles, have an average particle size of 20-500 nm and a gel content of 60% by weight or higher, and wherein the uncrosslinked rubber is styrene-butadiene rubber. The weight ratio of the rubber particles having crosslinked structure to the uncrosslinked rubber is greater than 20:80 and less than or equal to 80:20. The rubber composition comprises a blend of modified rubber component and base rubber, in which the modified rubber masterbatch is present in an amount of 1 to 70 parts by weight, relative to per 100 parts by weight of the base rubber. The vulcanized rubber of the rubber composition has not only low rolling resistance and excellent wet skid resistance, but also excellent wear resistance, and thus can be used for producing high performance tread rubber.

公开(公告)号：US08835453B2

公开(公告)日：2014-09-16

申请号：US12426721

申请日：2009-04-20

Applicant: Paonien Chan ,  Shou-Chung Chao ,  Shu-Chien Liu ,  Fan-Jung Liu ,  Li-Ya Wang

Inventor： Paonien Chan ,  Shou-Chung Chao ,  Shu-Chien Liu ,  Fan-Jung Liu ,  Li-Ya Wang

IPC: A61K31/439 ,  A61K9/00

CPC classification number: A61K31/439 ,  A61K9/0024

Abstract: The main goals of the invention are to develop the long-term release of Granisetron injection implant composition with biodegradable polymer and to develop relative processing. Granisetron is mixed with different biodegradable polymers, and then hot melt extrusion technique with different diameter, temperature, rate of extrusion and holding time is applied to make implant. In vitro dissolution of the Granisetron injection implant composition shows the component continued release of the drug for over 7 days.

Abstract translation: 本发明的主要目标是开发具有可生物降解聚合物的格拉司琼注射剂组合物的长期释放并开发相对加工。 格拉司琼与不同的可生物降解聚合物混合，然后应用不同直径，温度，挤出速率和保持时间的热熔挤出技术来制造植入物。 格拉司琼注射剂组合物的体外溶出显示药物持续释放7天以上。

公开(公告)号：US08669163B2

公开(公告)日：2014-03-11

申请号：US12898421

申请日：2010-10-05

Applicant: Krishna Kumar Bhuwalka ,  Ching-Ya Wang ,  Ken-Ichi Goto ,  Wen-Chin Lee ,  Carlos H. Diaz

Inventor： Krishna Kumar Bhuwalka ,  Ching-Ya Wang ,  Ken-Ichi Goto ,  Wen-Chin Lee ,  Carlos H. Diaz

IPC: H01L21/336

CPC classification number: H01L29/7391 ,  H01L21/26586

Abstract: A semiconductor device includes a channel region; a gate dielectric over the channel region; a gate electrode over the gate dielectric; and a first source/drain region adjacent the gate dielectric. The first source/drain region is of a first conductivity type. At least one of the channel region and the first source/drain region includes a superlattice structure. The semiconductor device further includes a second source/drain region on an opposite side of the channel region than the first source/drain region. The second source/drain region is of a second conductivity type opposite the first conductivity type. At most, one of the first source/drain region and the second source/drain region comprises an additional superlattice structure.

Abstract translation: 半导体器件包括沟道区; 沟道区上的栅极电介质; 位于栅极电介质上的栅电极; 以及与栅极电介质相邻的第一源极/漏极区域。 第一源极/漏极区域是第一导电类型。 沟道区域和第一源极/漏极区域中的至少一个包括超晶格结构。 所述半导体器件还包括与所述第一源极/漏极区域相比在所述沟道区域的相对侧上的第二源极/漏极区域。 第二源极/漏极区域是与第一导电类型相反的第二导电类型。 最多，第一源极/漏极区域和第二源极/漏极区域中的一个包括附加的超晶格结构。

公开(公告)号：US08619220B2

公开(公告)日：2013-12-31

申请号：US13562278

申请日：2012-07-30

Applicant: Wei-Ya Wang ,  Shu-Chin Lee ,  Wen-Lung Chen ,  Fu-Chuan Tsai ,  Yung-Lung Lin ,  Yong-Mao Lin ,  Chun-Chieh Tsao

Inventor： Wei-Ya Wang ,  Shu-Chin Lee ,  Wen-Lung Chen ,  Fu-Chuan Tsai ,  Yung-Lung Lin ,  Yong-Mao Lin ,  Chun-Chieh Tsao

IPC: B05D5/06

CPC classification number: G03F7/0007 ,  G02B5/201 ,  G02B5/223

Abstract: A manufacturing method of a color filter including following steps is provided. First, a partition is formed on a substrate to form a plurality of pixel regions on the substrate. Next, a color pigment is provided along a continuous pigment-providing route, so as to form the color pigment on a sequence of pixel regions among the plurality of pixel regions and the partition. The method mentioned above can prevent the unfilled phenomenon of the pigment around the corners of the pixel region. Besides, a liquid crystal display panel having the color filter is also provided.

Abstract translation: 提供了包括以下步骤的滤色器的制造方法。 首先，在基板上形成分隔，以在基板上形成多个像素区域。 接着，沿着连续的颜料提供路径设置彩色颜料，以便在多个像素区域和分隔物之间的像素区域序列上形成彩色颜料。 上述方法可以防止像素区域的角部附近的颜料的未填充现象。 此外，还提供了具有滤色器的液晶显示面板。

公开(公告)号：US08410186B2

公开(公告)日：2013-04-02

申请号：US12910244

申请日：2010-10-22

Applicant: Kuo-Chung Cheng ,  Yu-Shun Luo ,  Ching-Lin Wu ,  Chiu-Ya Wang ,  Yi-Min Chang

Inventor： Kuo-Chung Cheng ,  Yu-Shun Luo ,  Ching-Lin Wu ,  Chiu-Ya Wang ,  Yi-Min Chang

IPC: C08J9/28 ,  B05D1/26

CPC classification number: C08J9/28 ,  B01D67/0011 ,  B01D67/0013 ,  B01D71/46 ,  B01D2325/02 ,  C08J2201/0482 ,  C08J2205/02 ,  C08J2205/05 ,  C08J2363/00

Abstract: The present invention relates to a process for manufacturing a porous epoxy network, especially a porous epoxy membrane. The process according the present invention comprises the steps of: providing a reactant solution comprising an epoxy resin, a solvent and a curing agent; performing a first curing process to transform the reactant solution to a gel; and performing a second curing process to essentially remove the remaining solvent and transform the gel to form a porous epoxy network with open pores; wherein the curing agent is a tertiary amine.

Abstract translation: 本发明涉及多孔环氧网络的制造方法，特别是多孔环氧树脂膜。 根据本发明的方法包括以下步骤：提供包含环氧树脂，溶剂和固化剂的反应物溶液; 执行第一固化过程以将反应物溶液转变成凝胶; 并执行第二固化过程以基本上除去剩余的溶剂并转化凝胶以形成具有开孔的多孔环氧网络; 其中固化剂是叔胺。

公开(公告)号：US07951723B2

公开(公告)日：2011-05-31

申请号：US11552364

申请日：2006-10-24

Applicant: Ching-Ya Wang ,  Weng-Jin Wu ,  Henry Lo ,  Jean Wang

Inventor： Ching-Ya Wang ,  Weng-Jin Wu ,  Henry Lo ,  Jean Wang

IPC: H01L21/461

CPC classification number: H01L21/31133 ,  G03F7/422 ,  G03F7/423

Abstract: A method and apparatus involve providing a substrate having a dielectric layer formed thereon, forming a photoresist mask over the dielectric layer, the photoresist mask defining an opening, etching the dielectric layer through the at least one opening in the photoresist mask, treating a portion of the photoresist mask with an etching species, and removing the treated photoresist mask with a supercritical fluid. The etching, treating, and removing can be performed in one chamber.

Abstract translation: 一种方法和装置，包括提供其上形成有电介质层的衬底，在电介质层上形成光致抗蚀剂掩模，光刻胶掩模限定开口，通过光致抗蚀剂掩模中的至少一个开口蚀刻电介质层， 具有蚀刻物质的光致抗蚀剂掩模，并用超临界流体去除经处理的光致抗蚀剂掩模。 蚀刻，处理和去除可以在一个室中进行。

公开(公告)号：US07834345B2

公开(公告)日：2010-11-16

申请号：US12205585

申请日：2008-09-05

Applicant: Krishna Kumar Bhuwalka ,  Ching-Ya Wang ,  Ken-Ichi Goto ,  Wen-Chin Lee ,  Carlos H. Diaz

Inventor： Krishna Kumar Bhuwalka ,  Ching-Ya Wang ,  Ken-Ichi Goto ,  Wen-Chin Lee ,  Carlos H. Diaz

IPC: H01L29/94

CPC classification number: H01L29/7391 ,  H01L21/26586

Abstract: A semiconductor device includes a channel region; a gate dielectric over the channel region; a gate electrode over the gate dielectric; and a first source/drain region adjacent the gate dielectric. The first source/drain region is of a first conductivity type. At least one of the channel region and the first source/drain region includes a superlattice structure. The semiconductor device further includes a second source/drain region on an opposite side of the channel region than the first source/drain region. The second source/drain region is of a second conductivity type opposite the first conductivity type. At most, one of the first source/drain region and the second source/drain region comprises an additional superlattice structure.

Abstract translation: 半导体器件包括沟道区; 沟道区上的栅极电介质; 位于栅极电介质上的栅电极; 以及与栅极电介质相邻的第一源极/漏极区域。 第一源极/漏极区域是第一导电类型。 沟道区域和第一源极/漏极区域中的至少一个包括超晶格结构。 所述半导体器件还包括与所述第一源极/漏极区域相比在所述沟道区域的相对侧上的第二源极/漏极区域。 第二源极/漏极区域是与第一导电类型相反的第二导电类型。 最多，第一源极/漏极区域和第二源极/漏极区域中的一个包括附加的超晶格结构。

公开(公告)号：US20100167485A1

公开(公告)日：2010-07-01

申请号：US12722247

申请日：2010-03-11

Applicant: Ching-Ya Wang ,  Chung-Hu Ke ,  Wen-Chin Lee

Inventor： Ching-Ya Wang ,  Chung-Hu Ke ,  Wen-Chin Lee

IPC: H01L21/336 ,  H01L21/3205

CPC classification number: H01L29/7848 ,  H01L21/28518 ,  H01L21/76844 ,  H01L21/7685 ,  H01L29/665 ,  H01L29/66515 ,  H01L29/6659 ,  H01L29/7833

Abstract: A semiconductor structure includes a semiconductor substrate; a gate dielectric over the semiconductor substrate; a gate electrode over the gate dielectric; a source/drain region adjacent the gate dielectric; a silicide region on the source/drain region; a metal layer on top of, and physical contacting, the silicide region; an inter-layer dielectric (ILD) over the metal layer; and a contact opening in the ILD. The metal layer is exposed through the contact opening. The metal layer further extends under the ILD. The semiconductor structure further includes a contact in the contact opening.

Abstract translation: 半导体结构包括半导体衬底; 半导体衬底上的栅极电介质; 位于栅极电介质上的栅电极; 与栅极电介质相邻的源极/漏极区域; 源/漏区上的硅化物区; 硅化物区域的顶部和物理接触处的金属层; 金属层上的层间电介质（ILD）; 和ILD的接触开口。 金属层通过接触开口露出。 金属层进一步在ILD下延伸。 半导体结构还包括接触开口中的接触。