公开(公告)号：US20130093065A1

公开(公告)日：2013-04-18

申请号：US13525478

申请日：2012-06-18

申请人： Takao KACHI ,  Yasuhiro YOSHIURA ,  Fumihito MASUOKA

发明人： Takao KACHI ,  Yasuhiro YOSHIURA ,  Fumihito MASUOKA

IPC分类号： H01L29/02

CPC分类号： H01L29/861 ,  H01L29/32 ,  H01L29/36

摘要： A semiconductor device includes: an N-type drift layer; a P-type anode layer above the N-type drift layer; an N-type cathode layer below the N-type drift layer; a first short lifetime layer between the N-type drift layer and the P-type anode layer; and a second short lifetime layer between the N-type drift layer and the N-type cathode layer. A carrier lifetime in the first and second short lifetime layers is shorter than a carrier lifetime in the N-type drift layer. A carrier lifetime in the N-type cathode layer is longer than the carrier lifetime in the N-type drift layer.

摘要翻译： 一种半导体器件包括：N型漂移层; N型漂移层上方的P型阳极层; N型漂移层下面的N型阴极层; 在N型漂移层和P型阳极层之间的第一短寿命层; 以及N型漂移层和N型阴极层之间的第二短寿命层。 第一和第二短寿命层中的载流子寿命短于N型漂移层中的载流子寿命。 N型阴极层中的载流子寿命长于N型漂移层中的载流子寿命。

公开(公告)号：US20090289276A1

公开(公告)日：2009-11-26

申请号：US12188497

申请日：2008-08-08

申请人： Yasuhiro Yoshiura ,  Masanori Inoue

发明人： Yasuhiro Yoshiura ,  Masanori Inoue

IPC分类号： H01L27/06

CPC分类号： H01L29/0619 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0834 ,  H01L29/1016 ,  H01L29/74 ,  H01L29/7805 ,  H01L29/7811 ,  H01L29/861 ,  H01L29/8611

摘要： A semiconductor device is provided. On one main surface side of an n-type semiconductor substrate, a p-type diffusion region to serve as an anode of a diode is formed. A guard ring formed of a p-type diffusion region is formed to surround the anode. On the other main surface side, an n-type ultrahigh-concentration impurity layer and an n-type high-concentration impurity layer to serve as a cathode are formed. In a guard-ring opposed region located in the cathode and opposite to the guard ring, a cathode-side p-type diffusion region is formed. Accordingly, concentration of the electric current on an outer peripheral end portion of the anode is suppressed.

摘要翻译： 提供半导体器件。 在n型半导体衬底的一个主表面侧上，形成用作二极管的阳极的p型扩散区域。 形成由p型扩散区形成的保护环以包围阳极。 在另一个主表面侧，形成用作阴极的n型超高浓度杂质层和n型高浓度杂质层。 在位于阴极中并与保护环相对的保护环相对区域中，形成阴极侧p型扩散区域。 因此，抑制了阳极的外周端部的电流集中。

公开(公告)号：US09159563B2

公开(公告)日：2015-10-13

申请号：US14427852

申请日：2012-09-26

申请人： Tomohide Terashima ,  Yasuhiro Yoshiura ,  Eiko Otsuki

发明人： Tomohide Terashima ,  Yasuhiro Yoshiura ,  Eiko Otsuki

IPC分类号： H01L21/02 ,  H01L21/263 ,  H01L21/67 ,  H01L21/68 ,  H01L21/677 ,  H01J37/30

CPC分类号： H01L21/263 ,  H01J37/30 ,  H01J37/3002 ,  H01J2237/201 ,  H01J2237/202 ,  H01J2237/20221 ,  H01J2237/30455 ,  H01J2237/317 ,  H01L21/67115 ,  H01L21/67718 ,  H01L21/67745 ,  H01L21/6776 ,  H01L21/68

摘要： A semiconductor device manufacturing method according to the present invention includes a step of arranging a plurality of processing objects on a first tray and a second tray adjacent to the first tray, a plurality of application steps in which application of an application substance to the plurality of processing objects is repeated a certain number of times by emitting the application substance from an application device formed right above a contact position at which the first tray and the second tray contact each other, by swinging the application device along a first direction across the contact position, and by moving the first tray and the second tray in a second direction perpendicular to the first direction, and an interchange step of interchanging the first tray and the second tray in position without changing the directions of the first tray and the second tray corresponding to the second direction, the interchange step being executed at least one time among the plurality of application steps.

摘要翻译： 根据本发明的半导体器件制造方法包括将多个处理对象布置在与第一托盘相邻的第一托盘和第二托盘上的步骤，多个施加步骤，其中将应用物质应用于多个 通过从第一托盘和第二托盘彼此接触的接触位置正上方形成的施加装置发射施加物质，通过沿着第一方向跨越接触位置摆动施加装置来重复加工物体一定次数 并且通过沿着与第一方向垂直的第二方向移动第一托盘和第二托盘，以及互换步骤，将第一托盘和第二托盘互换在适当位置，而不改变对应于第一托盘和第二托盘的方向 所述第二方向，所述交换步骤在所述多个之中至少执行一次 应用步骤。

公开(公告)号：US08698250B2

公开(公告)日：2014-04-15

申请号：US13525478

申请日：2012-06-18

申请人： Takao Kachi ,  Yasuhiro Yoshiura ,  Fumihito Masuoka

发明人： Takao Kachi ,  Yasuhiro Yoshiura ,  Fumihito Masuoka

IPC分类号： H01L21/70

CPC分类号： H01L29/861 ,  H01L29/32 ,  H01L29/36

摘要： A semiconductor device includes: an N-type drift layer; a P-type anode layer above the N-type drift layer; an N-type cathode layer below the N-type drift layer; a first short lifetime layer between the N-type drift layer and the P-type anode layer; and a second short lifetime layer between the N-type drift layer and the N-type cathode layer. A carrier lifetime in the first and second short lifetime layers is shorter than a carrier lifetime in the N-type drift layer. A carrier lifetime in the N-type cathode layer is longer than the carrier lifetime in the N-type drift layer.

摘要翻译： 一种半导体器件包括：N型漂移层; N型漂移层上方的P型阳极层; N型漂移层下面的N型阴极层; 在N型漂移层和P型阳极层之间的第一短寿命层; 以及N型漂移层和N型阴极层之间的第二短寿命层。 第一和第二短寿命层中的载流子寿命短于N型漂移层中的载流子寿命。 N型阴极层中的载流子寿命长于N型漂移层中的载流子寿命。

公开(公告)号：US20150228488A1

公开(公告)日：2015-08-13

申请号：US14427852

申请日：2012-09-26

申请人： Tomohide Terashima ,  Yasuhiro Yoshiura ,  Eiko Otsuki

发明人： Tomohide Terashima ,  Yasuhiro Yoshiura ,  Eiko Otsuki

IPC分类号： H01L21/263 ,  H01J37/30 ,  H01L21/677 ,  H01L21/67 ,  H01L21/68

CPC分类号： H01L21/263 ,  H01J37/30 ,  H01J37/3002 ,  H01J2237/201 ,  H01J2237/202 ,  H01J2237/20221 ,  H01J2237/30455 ,  H01J2237/317 ,  H01L21/67115 ,  H01L21/67718 ,  H01L21/67745 ,  H01L21/6776 ,  H01L21/68

摘要： A semiconductor device manufacturing method according to the present invention includes a step of arranging a plurality of processing objects on a first tray and a second tray adjacent to the first tray, a plurality of application steps in which application of an application substance to the plurality of processing objects is repeated a certain number of times by emitting the application substance from an application device formed right above a contact position at which the first tray and the second tray contact each other, by swinging the application device along a first direction across the contact position, and by moving the first tray and the second tray in a second direction perpendicular to the first direction, and an interchange step of interchanging the first tray and the second tray in position without changing the directions of the first tray and the second tray corresponding to the second direction, the interchange step being executed at least one time among the plurality of application steps.

摘要翻译： 根据本发明的半导体器件制造方法包括将多个处理对象布置在与第一托盘相邻的第一托盘和第二托盘上的步骤，多个施加步骤，其中将应用物质应用于多个 通过从第一托盘和第二托盘彼此接触的接触位置正上方形成的施加装置发射施加物质，通过沿着第一方向跨越接触位置摆动施加装置来重复加工物体一定次数 并且通过沿着与第一方向垂直的第二方向移动第一托盘和第二托盘，以及互换步骤，将第一托盘和第二托盘互换在适当位置，而不改变对应于第一托盘和第二托盘的方向 所述第二方向，所述交换步骤在所述多个之中至少执行一次 应用步骤。