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公开(公告)号：US09075319B2
公开(公告)日：2015-07-07
申请号：US13260295
申请日：2010-03-30
摘要： A mask blank and transfer mask that overcomes problems caused by an electromagnetic field (EMF) effect when a DRAM half pitch (hp) is 32 nm or less specified in semiconductor device design specifications. The mask blank is used in manufacturing a transfer mask to which ArF exposure light is applied, and includes a light shielding film 10 having a multilayer structure. The multilayer structure includes a light shielding layer 11 and a surface anti-reflection layer 12 formed on a transparent substrate 1. An auxiliary light shielding film 20 is formed on the light shielding film 10. The light shielding film 10 has a thickness of 40 nm or less and an optical density of 2.0 or more to 2.7 or less for exposure light. The optical density is 2.8 or more for exposure light in the multilayer structure of the light shielding film 10 and the auxiliary light shielding film 20.
摘要翻译： 当半导体器件设计规范规定的DRAM半间距（hp）为32nm以下时，可以克服电磁场（EMF）效应引起的问题的掩模空白和传送掩模。 掩模坯料用于制造施加ArF曝光光的转印掩模，并且包括具有多层结构的遮光膜10。 多层结构包括形成在透明基板1上的遮光层11和表面防反射层12.在遮光膜10上形成辅助遮光膜20.遮光膜10的厚度为40nm 曝光光的光密度为2.0以上且2.7以下。 对于遮光膜10和辅助遮光膜20的多层结构中的曝光，光密度为2.8以上。
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公开(公告)号：US20120100466A1
公开(公告)日：2012-04-26
申请号：US13260295
申请日：2010-03-30
摘要： A mask blank and transfer mask that overcomes problems caused by an electromagnetic field (EMF) effect when the DRAM half pitch (hp) specified in semiconductor device design specifications is 32 nm or less. The mask blank is used in manufacturing a transfer mask to which ArF exposure light is applied, and includes a light shielding film 10 having a multilayer structure. The multilayer structure includes a light shielding layer 11 and a surface anti-reflection layer 12 formed on a transparent substrate 1. An auxiliary light shielding film 20 is formed on the light shielding film 10. The light shielding film 10 has a thickness of 40 nm or less and an optical density of 2.0 or more to 2.7 or less for exposure light. The optical density for exposure light in the multilayer structure of the light shielding film 10 and the auxiliary light shielding film 20 is 2.8 or more.
摘要翻译： 当在半导体器件设计规范中规定的DRAM半间距（hp）为32nm以下时，能够克服由电磁场（EMF）效应引起的问题的掩模空白和传送掩模。 掩模坯料用于制造施加ArF曝光光的转印掩模，并且包括具有多层结构的遮光膜10。 多层结构包括形成在透明基板1上的遮光层11和表面防反射层12.在遮光膜10上形成辅助遮光膜20.遮光膜10的厚度为40nm 曝光光的光密度为2.0以上且2.7以下。 遮光膜10和辅助遮光膜20的多层结构中的曝光光的光密度为2.8以上。
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3.发明授权Photomask blank and production method thereof, and photomask production method, and semiconductor device production method 有权光掩模坯及其制造方法以及光掩模的制造方法以及半导体装置的制造方法公开(公告)号：US08697315B2
公开(公告)日：2014-04-15
申请号：US13347425
申请日：2012-01-10
IPC分类号： G03F1/00
摘要： A photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern. The photomask blank provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film. The photomask blank includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译： 一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚。 光掩模坯料通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好的图案精度，并且通过提高屏蔽膜的干蚀刻速率能够减少干蚀刻时间。 光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。 屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。 透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。
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4.发明申请PHOTOMASK BLANK AND PRODUCTION METHOD THEREOF, AND PHOTOMASK PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD 有权光电隔离器及其制造方法，以及光电二极管生产方法和半导体器件生产方法公开(公告)号：US20120129084A1
公开(公告)日：2012-05-24
申请号：US13347425
申请日：2012-01-10
IPC分类号： G03F1/50
摘要： A photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern. The photomask blank provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film. The photomask blank includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译： 一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚。 光掩模坯料通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好的图案精度，并且通过提高屏蔽膜的干蚀刻速率能够减少干蚀刻时间。 光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。 屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。 透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。
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5.发明授权Photomask blank and production method thereof, and photomask production method, and semiconductor device production method 有权光掩模坯及其制造方法以及光掩模的制造方法以及半导体装置的制造方法公开(公告)号：US08114556B2
公开(公告)日：2012-02-14
申请号：US12066360
申请日：2006-09-08
IPC分类号： G03F1/00
摘要： There are provided a photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern, a photomask blank which provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and a photomask blank which is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film.The photomask blank of the present invention includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译： 提供了一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚，通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好图案精度的光掩模坯料， 以及通过提高屏蔽膜的干蚀刻速度能够减少干蚀刻时间的光掩模坯料。 本发明的光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。 屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。 透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。
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6.发明申请PHOTOMASK BLANK AND PRODUCTION METHOD THEREOF, AND PHOTOMASK PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD 有权光电隔离器及其制造方法，以及光电二极管生产方法和半导体器件生产方法公开(公告)号：US20090155698A1
公开(公告)日：2009-06-18
申请号：US12066360
申请日：2006-09-08
摘要： There are provided a photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern, a photomask blank which provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and a photomask blank which is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film.The photomask blank of the present invention includes a translucent substrate having thereon a shielding film composed mainly of chromium and the shielding film contains hydrogen. The shielding film is formed in such a manner that the film formation rate of the layer at the surface side is lower than the film formation rate of the layer at the translucent substrate side of the shielding film. The dry etching rate of the shielding film is lower at the translucent substrate side than at the surface side.
摘要翻译： 提供了一种光掩模坯料，其能够防止由用于形成抗蚀剂图案的电子束图案拉伸引起的静电积聚，通过优化沿着屏蔽膜的深度方向的干蚀刻速率而提供良好图案精度的光掩模坯料， 以及通过提高屏蔽膜的干蚀刻速度能够减少干蚀刻时间的光掩模坯料。 本发明的光掩模坯料包括其上具有主要由铬构成的屏蔽膜的透光性基板，屏蔽膜含有氢。 屏蔽膜以这样的方式形成，使得表面侧的层的成膜速率低于屏蔽膜的透光性基板侧的层的成膜速度。 透光性基板侧的屏蔽膜的干蚀刻率比表面侧低。
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7.发明申请PHOTOMASK BLANK AND METHOD OF PRODUCING THE SAME, METHOD OF PRODUCING PHOTOMASK, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE 有权光电隔离器及其制造方法，制造光电二极管的方法和制造半导体器件的方法公开(公告)号：US20090233182A1
公开(公告)日：2009-09-17
申请号：US12088408
申请日：2006-09-29
摘要： It is provided a photomask blank that has good flatness when a light-shielding film is patterned and hence can provide a good mask pattern accuracy and a good pattern transfer accuracy, and a method of producing a photomask.A photomask blank of the present invention includes a light-shielding film containing at least chromium on a light-transmitting substrate. The light-shielding film is formed so as to cause a desired film stress in the direction opposite to that of a change in the film stress that is anticipated to be caused in the light-shielding film by heat treatment according to a resist film formed on the light-shielding film. A photomask is produced by patterning the light-shielding film of the photomask blank by dry etching.
摘要翻译： 提供一种光掩模坯料，当遮光膜被图案化时具有良好的平坦度，因此可以提供良好的掩模图案精度和良好的图案转印精度，以及制造光掩模的方法。 本发明的光掩模坯料包括在透光性基板上至少含有铬的遮光膜。 遮光膜形成为使得在与通过热处理在遮光膜中引起的膜应力变化相反的方向产生期望的膜应力，所述抗蚀剂膜根据形成在 遮光膜。 通过干蚀刻图案化光掩模坯料的遮光膜来制造光掩模。
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8.发明授权Photomask blank and method of producing the same, method of producing photomask, and method of producing semiconductor device 有权光掩模坯料及其制造方法，制造光掩模的方法以及半导体装置的制造方法公开(公告)号：US07901842B2
公开(公告)日：2011-03-08
申请号：US12088408
申请日：2006-09-29
IPC分类号： G03F1/00
摘要： It is provided a photomask blank that has good flatness when a light-shielding film is patterned and hence can provide a good mask pattern accuracy and a good pattern transfer accuracy, and a method of producing a photomask.A photomask blank of the present invention includes a light-shielding film containing at least chromium on a light-transmitting substrate. The light-shielding film is formed so as to cause a desired film stress in the direction opposite to that of a change in the film stress that is anticipated to be caused in the light-shielding film by heat treatment according to a resist film formed on the light-shielding film. A photomask is produced by patterning the light-shielding film of the photomask blank by dry etching.
摘要翻译： 提供一种光掩模坯料，当遮光膜被图案化时具有良好的平坦度，因此可以提供良好的掩模图案精度和良好的图案转印精度，以及制造光掩模的方法。 本发明的光掩模坯料包括在透光性基板上至少含有铬的遮光膜。 遮光膜形成为使得在与通过热处理在遮光膜中引起的膜应力变化相反的方向产生期望的膜应力，所述抗蚀剂膜根据形成在 遮光膜。 通过干蚀刻图案化光掩模坯料的遮光膜来制造光掩模。
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公开(公告)号：US08367276B2
公开(公告)日：2013-02-05
申请号：US12209694
申请日：2008-09-12
申请人： Yasushi Okubo , Masahiro Hashimoto , Toshiyuki Suzuki , Takayuki Ohnishi , Hirohito Anze , Hitoshi Sunaoshi , Takashi Kamikubo
发明人： Yasushi Okubo , Masahiro Hashimoto , Toshiyuki Suzuki , Takayuki Ohnishi , Hirohito Anze , Hitoshi Sunaoshi , Takashi Kamikubo
摘要： A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen.
摘要翻译： 在具有主要含有铬的材料的遮光膜的透明基板上形成掩模坯料，并且通过使用电子束写入抗蚀剂通过光刻将遮光膜形成为转印图案而用于获得光掩模。 掩模坯料包括形成在遮光膜上的掩模层，用于在蚀刻中用作蚀刻掩模，其将遮光膜形成为转印图案。 掩模层由含硅的材料制成。 掩模坯料还包括形成在掩模层上并且至少含有铬和氮的氮化铬基膜。
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公开(公告)号：US08663875B2
公开(公告)日：2014-03-04
申请号：US13201148
申请日：2010-01-29
IPC分类号： G03F1/48
摘要： A thin film composed of a material containing a metal and silicon is formed on a transparent substrate, and a thin film pattern is formed by patterning the thin film. Then, the main surface and the side walls of the thin film pattern are previously modified so as to prevent the transfer characteristics of the thin film pattern from changing more than predetermined even in the case where exposure light with a wavelength of 200 nm or less is cumulatively applied onto the thin film pattern which has been formed. The main surface and the side walls are modified by, for instance, performing heat treatment to the main surface and the side walls at 450-900° C. in the atmosphere containing oxygen.
摘要翻译： 在透明基板上形成由含有金属和硅的材料构成的薄膜，通过图案化薄膜形成薄膜图案。 然后，预先修改薄膜图案的主表面和侧壁，以便即使在波长为200nm以下的曝光光为200nm以下的情况下，也能够防止薄膜图案的转印特性变化超过规定 累积地施加到已经形成的薄膜图案上。 主表面和侧壁通过例如在含有氧的气氛中在450-900℃下对主表面和侧壁进行热处理而进行改性。
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