公开(公告)号：US20110309511A1

公开(公告)日：2011-12-22

申请号：US13222817

申请日：2011-08-31

申请人： Yoshinori CHO ,  Takamaro Kikkawa

发明人： Yoshinori CHO ,  Takamaro Kikkawa

IPC分类号： H01L23/522 ,  H01L21/312

CPC分类号： H01L23/5329 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/53228 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.

摘要翻译： 通过在基板上涂布用于形成多孔二氧化硅膜的原料，进行气相输送处理，使基板暴露于不含有多孔二氧化硅膜的有机胺蒸气的气氛下，提高了包含多孔二氧化硅膜的低介电常数膜的疏水性 加水。 同时，通过将孔径控制在预定范围内来实现介电常数的降低，漏电流的降低和机械强度的提高。

公开(公告)号：US08253251B2

公开(公告)日：2012-08-28

申请号：US13222817

申请日：2011-08-31

申请人： Yoshinori Cho ,  Takamaro Kikkawa

发明人： Yoshinori Cho ,  Takamaro Kikkawa

IPC分类号： H01L23/48

CPC分类号： H01L23/5329 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/53228 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.

摘要翻译： 通过在基板上涂布用于形成多孔二氧化硅膜的原料，进行气相输送处理，使基板暴露于不含有多孔二氧化硅膜的有机胺蒸气的气氛下，提高了包含多孔二氧化硅膜的低介电常数膜的疏水性 加水。 同时，通过将孔径控制在预定范围内来实现介电常数的降低，漏电流的降低和机械强度的提高。

公开(公告)号：US20090169342A1

公开(公告)日：2009-07-02

申请号：US11630123

申请日：2004-06-21

申请人： Takehiko Yoshimura ,  Tatsuhiko Nagata ,  Masaru Seki ,  Yoshinori Cho

发明人： Takehiko Yoshimura ,  Tatsuhiko Nagata ,  Masaru Seki ,  Yoshinori Cho

IPC分类号： H01L21/677

CPC分类号： H01L21/67775 ,  H01L21/67772

摘要： A load port (100) comprises: a mounting base (101) for mounting a wafer carrier (10); a nozzle unit (110) having nozzle outlets (111) for generating an outflow/inflow of a purge gas in a direction approximately parallel to spaces (A) between wafers (1) stored within the wafer carrier (10) so as to replace the atmosphere of the wafer carrier (10); a driving unit including a nozzle driving motor (166) etc., for extending the nozzle unit (110) toward a door opening portion (202) of the load port (100) formed near a wall face (201) of a clean room where a wafer processing apparatus has been installed; an airtight space forming unit (120) which can be connected to a container opening (12) in an airtight manner, thereby forming an airtight space (B) that communicates with the interior space of the wafer carrier (10); a control unit (160) for controlling the switching of the flow of the purge gas generated by the nozzle unit (110) according to the oxygen concentration that indicates the purge degree of the atmosphere of the wafer carrier (10); etc.

摘要翻译： 负载端口（100）包括：用于安装晶片载体（10）的安装基座（101）; 具有喷嘴出口（111）的喷嘴单元（110），用于在与晶片载体（10）中存储的晶片（1）之间的空间（A）大致平行的方向上产生吹扫气体的流出/流入，以便代替 晶片载体（10）的气氛; 驱动单元，其包括喷嘴驱动马达（166）等，用于将喷嘴单元（110）朝向在洁净室的壁面（201）附近形成的负载口（100）的门开口部（202）延伸， 已经安装了晶片处理装置; 气密空间形成单元（120），其可以气密地连接到容器开口（12），从而形成与晶片载体（10）的内部空间连通的气密空间（B）; 根据表示晶片载体（10）的气氛的吹扫度的氧浓度，控制由喷嘴单元（110）产生的吹扫气体的流量切换的控制单元（160）。 等等

公开(公告)号：US20130000757A1

公开(公告)日：2013-01-03

申请号：US13364789

申请日：2012-02-02

申请人： Takehiko YOSHIMURA ,  Tatsuhiko NAGATA ,  Masaru SEKI ,  Yoshinori CHO

发明人： Takehiko YOSHIMURA ,  Tatsuhiko NAGATA ,  Masaru SEKI ,  Yoshinori CHO

IPC分类号： F03B11/02

CPC分类号： H01L21/67772 ,  Y10S414/135 ,  Y10T137/8593

摘要： A load part has a nozzle unit having outlets for generating outflow and/or inflow of gas used for replacing the atmosphere of a wafer storage container, in a direction approximately parallel to spaces between adjacent wafers being stored, are a driving unit for extending the nozzle unit to a door opening portion.

摘要翻译： 负载部具有喷嘴单元，该喷嘴单元具有用于产生用于更换晶片储存容器的气体的流出和/或流入的出口，所述气体在大致平行于存储的相邻晶片之间的空间的方向上是用于使喷嘴延伸的驱动单元 单元到门开口部分。

公开(公告)号：US20100289143A1

公开(公告)日：2010-11-18

申请号：US12617040

申请日：2009-11-12

申请人： Yoshinori Cho ,  Takamaro Kikkawa

发明人： Yoshinori Cho ,  Takamaro Kikkawa

IPC分类号： H01L23/48 ,  H01L21/31 ,  H01L21/768

CPC分类号： H01L23/5329 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/53228 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.

摘要翻译： 通过在基板上涂布用于形成多孔二氧化硅膜的原料，进行气相输送处理，使基板暴露于不含有多孔二氧化硅膜的有机胺蒸气的气氛下，提高了包含多孔二氧化硅膜的低介电常数膜的疏水性 加水。 同时，通过将孔径控制在预定范围内来实现介电常数的降低，漏电流的降低和机械强度的提高。

公开(公告)号：US09010384B2

公开(公告)日：2015-04-21

申请号：US13364789

申请日：2012-02-02

申请人： Takehiko Yoshimura ,  Tatsuhiko Nagata ,  Masaru Seki ,  Yoshinori Cho

发明人： Takehiko Yoshimura ,  Tatsuhiko Nagata ,  Masaru Seki ,  Yoshinori Cho

IPC分类号： B65B31/04 ,  H01L21/54 ,  B01L1/00 ,  H01L21/677

CPC分类号： H01L21/67772 ,  Y10S414/135 ,  Y10T137/8593

摘要： A load part has a nozzle unit having outlets for generating outflow and/or inflow of gas used for replacing the atmosphere of a wafer storage container, in a direction approximately parallel to spaces between adjacent wafers being stored, are a driving unit for extending the nozzle unit to a door opening portion.

摘要翻译： 负载部具有喷嘴单元，该喷嘴单元具有用于产生用于更换晶片储存容器的气体的流出和/或流入的出口，所述气体在大致平行于存储的相邻晶片之间的空间的方向上是用于使喷嘴延伸的驱动单元 单元到门开口部分。

公开(公告)号：US08030221B2

公开(公告)日：2011-10-04

申请号：US12617040

申请日：2009-11-12

申请人： Yoshinori Cho ,  Takamaro Kikkawa

发明人： Yoshinori Cho ,  Takamaro Kikkawa

IPC分类号： H01L21/00

CPC分类号： H01L23/5329 ,  H01L21/02164 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/53228 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of organic amine vapor to which no water is added. Simultaneously, reduction in a dielectric constant, reduction in leakage current, and improvement in mechanical strength are attained by controlling a pore diameter in a predetermined range.

摘要翻译： 通过在基板上涂布用于形成多孔二氧化硅膜的原料，进行气相输送处理，使基板暴露于不含有多孔二氧化硅膜的有机胺蒸气的气氛下，提高了包含多孔二氧化硅膜的低介电常数膜的疏水性 加水。 同时，通过将孔径控制在预定范围内来实现介电常数的降低，漏电流的降低和机械强度的提高。