公开(公告)号：US20070019406A1

公开(公告)日：2007-01-25

申请号：US11528611

申请日：2006-09-28

申请人： Junji Oohara ,  Kazuhiko Kano ,  Yoshitaka Noda ,  Yukihiro Takeuchi ,  Toshiyuki Morishita

发明人： Junji Oohara ,  Kazuhiko Kano ,  Yoshitaka Noda ,  Yukihiro Takeuchi ,  Toshiyuki Morishita

IPC分类号： F21V7/00

CPC分类号： H01L27/14625 ,  G02B6/4249 ,  H01L27/14627 ,  H01L27/14685

摘要： An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.

摘要翻译： 光学器件包括半导体衬底和具有设置在衬底上的多个柱状构件的光学部件。 每个柱状构件以立式的方式设置并彼此粘合，从而设置光学部件。 光学部件与基板一体化。 该光学部件具有高设计自由度。

公开(公告)号：US07129176B2

公开(公告)日：2006-10-31

申请号：US10759025

申请日：2004-01-20

申请人： Junji Oohara ,  Kazuhiko Kano ,  Yoshitaka Noda ,  Yukihiro Takeuchi ,  Toshiyuki Morishita

发明人： Junji Oohara ,  Kazuhiko Kano ,  Yoshitaka Noda ,  Yukihiro Takeuchi ,  Toshiyuki Morishita

IPC分类号： H01L21/027

CPC分类号： H01L27/14625 ,  G02B6/4249 ,  H01L27/14627 ,  H01L27/14685

摘要： An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.

摘要翻译： 光学器件包括半导体衬底和具有设置在衬底上的多个柱状构件的光学部件。 每个柱状构件以立式的方式设置并彼此粘合，从而设置光学部件。 光学部件与基板一体化。 该光学部件具有高设计自由度。

公开(公告)号：US07532404B2

公开(公告)日：2009-05-12

申请号：US11528611

申请日：2006-09-28

申请人： Junji Oohara ,  Kazuhiko Kano ,  Yoshitaka Noda ,  Yukihiko Takeuchi ,  Toshiyuki Morishita

发明人： Junji Oohara ,  Kazuhiko Kano ,  Yoshitaka Noda ,  Yukihiko Takeuchi ,  Toshiyuki Morishita

IPC分类号： G02B27/10 ,  G02B6/32

CPC分类号： H01L27/14625 ,  G02B6/4249 ,  H01L27/14627 ,  H01L27/14685

摘要： An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.

摘要翻译： 光学器件包括半导体衬底和具有设置在衬底上的多个柱状构件的光学部件。 每个柱状构件以立式的方式设置并彼此粘合，从而设置光学部件。 光学部件与基板一体化。 该光学部件具有高设计自由度。

公开(公告)号：US20140049032A1

公开(公告)日：2014-02-20

申请号：US14113643

申请日：2012-04-27

申请人： Manabu Urata ,  Kenichi Suzuki ,  Junji Ishii ,  Yoshitaka Noda ,  Milsuyori Gurita

发明人： Manabu Urata ,  Kenichi Suzuki ,  Junji Ishii ,  Yoshitaka Noda ,  Milsuyori Gurita

IPC分类号： B62D24/00

CPC分类号： B60G21/0551 ,  B60G2206/50 ,  B62D21/02 ,  B62D21/11 ,  B62D24/00

摘要： A chassis frame (1) including connection members (13) each configured by a pipe that is connected to a vehicle body frame. Each connection member (13) is provided with an attachment part (2) at an end of the pipe. The attachment part (2) includes a flat attachment face (21) formed by flatly crashing an end of the pipe to form the overlapped portion where a plate of the pipe is overlapped. The flat attachment face (21) is provided on a center in left and right direction of the overlapped portion. A shape of the end of the pipe is a substantially gate shape in its cross section. The attachment part (2) further includes longitudinal ribs (22) bending from the flat attachment face (21) to both left and right sides of the overlapped portion. Each longitudinal rib (22) is formed with a through hole (221) communicating an outside and an inner side of each connection member (13) by expanding a folded edge of the overlapped portion, the through hole is shortened by cutting the plate of the pipe surrounding an opening of the through hole (221).

摘要翻译： 一种底盘框架（1），其包括连接构件（13），每个连接构件由连接到车身框架的管道构成。 每个连接构件（13）在管的端部设置有附接部分（2）。 安装部分（2）包括通过使管的一端平坦地破碎而形成的平坦的安装面（21），以形成重叠的管道的重叠部分。 平面安装面（21）设置在重叠部分的左右方向的中心。 管的端部的形状在其截面上是大致门形状。 安装部分（2）还包括从平坦的安装面（21）弯曲到重叠部分的左右两侧的纵向肋（22）。 每个纵向肋（22）形成有通过扩大重叠部分的折叠边缘而连通每个连接构件（13）的外侧和内侧的通孔（221），通过将板 围绕通孔（221）的开口的管道。

公开(公告)号：US06972458B2

公开(公告)日：2005-12-06

申请号：US10729955

申请日：2003-12-09

申请人： Naohiro Suzuki ,  Jun Sakakibara ,  Yoshitaka Noda ,  Hitoshi Yamaguchi

发明人： Naohiro Suzuki ,  Jun Sakakibara ,  Yoshitaka Noda ,  Hitoshi Yamaguchi

IPC分类号： H01L29/41 ,  H01L21/336 ,  H01L21/8222 ,  H01L21/8234 ,  H01L21/8248 ,  H01L21/8249 ,  H01L21/84 ,  H01L27/06 ,  H01L27/08 ,  H01L27/088 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/49 ,  H01L29/732 ,  H01L29/739 ,  H01L29/76 ,  H01L29/78 ,  H01L29/786 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/66681 ,  H01L29/7394 ,  H01L29/7824 ,  H01L29/7825

摘要： A semiconductor device includes a base P region, a source N+ region, and a drain N+ region formed in a surface layer portion on a principal surface in an N− silicon layer. In the surface layer portion on the principal surface, an N well region is formed deeper than the drain N+ region in a region including the drain N+ region and is in contact with the base P region. A trench is formed so as to penetrate the base P region in a direction toward the drain N+ region from the source N+ region as a planar structure. A gate electrode is formed via a gate insulating film in the inside of the trench.

摘要翻译： 半导体器件包括在N - 硅层。 在主表面的表层部分，在包括漏极N + SUP区域的区域中，N阱区形成得比漏极N + + SUP区域深，并与之接触 与基地区P。 形成沟槽，以从源极N +区域的漏极N + SUP区域的方向穿过基极P区域作为平面结构。 栅极电极通过沟槽内部的栅极绝缘膜形成。

公开(公告)号：US08770605B2

公开(公告)日：2014-07-08

申请号：US14113643

申请日：2012-04-27

申请人： Manabu Urata ,  Kenichi Suzuki ,  Junji Ishii ,  Yoshitaka Noda ,  Mitsuyori Gurita

发明人： Manabu Urata ,  Kenichi Suzuki ,  Junji Ishii ,  Yoshitaka Noda ,  Mitsuyori Gurita

IPC分类号： B62D21/02 ,  B60G21/055

CPC分类号： B60G21/0551 ,  B60G2206/50 ,  B62D21/02 ,  B62D21/11 ,  B62D24/00

摘要： A chassis frame (1) including connection members (13) each configured by a pipe that is connected to a vehicle body frame. Each connection member (13) is provided with an attachment part (2) at an end of the pipe. The attachment part (2) includes a flat attachment face (21) formed by flatly crashing an end of the pipe to form the overlapped portion where a plate of the pipe is overlapped. The flat attachment face (21) is provided on a center in left and right direction of the overlapped portion. A shape of the end of the pipe is a substantially gate shape in its cross section. The attachment part (2) further includes longitudinal ribs (22) bending from the flat attachment face (21) to both left and right sides of the overlapped portion. Each longitudinal rib (22) is formed with a through hole (221) communicating an outside and an inner side of each connection member (13) by expanding a folded edge of the overlapped portion, the through hole is shortened by cutting the plate of the pipe surrounding an opening of the through hole (221).

摘要翻译： 一种底盘框架（1），其包括连接构件（13），每个连接构件由连接到车身框架的管道构成。 每个连接构件（13）在管的端部设置有附接部分（2）。 安装部分（2）包括通过使管的一端平坦地破碎而形成的平坦的安装面（21），以形成重叠的管道的重叠部分。 平面安装面（21）设置在重叠部分的左右方向的中心。 管的端部的形状在其截面上是大致门形状。 安装部分（2）还包括从平坦的安装面（21）弯曲到重叠部分的左右两侧的纵向肋（22）。 每个纵向肋（22）形成有通过扩大重叠部分的折叠边缘而连通每个连接构件（13）的外侧和内侧的通孔（221），通过将板 围绕通孔（221）的开口的管道。

公开(公告)号：US20050230747A1

公开(公告)日：2005-10-20

申请号：US11156451

申请日：2005-06-21

申请人： Naohiro Suzuki ,  Jun Sakakibara ,  Yoshitaka Noda ,  Hitoshi Yamaguchi

发明人： Naohiro Suzuki ,  Jun Sakakibara ,  Yoshitaka Noda ,  Hitoshi Yamaguchi

IPC分类号： H01L29/41 ,  H01L21/336 ,  H01L21/8222 ,  H01L21/8234 ,  H01L21/8248 ,  H01L21/8249 ,  H01L21/84 ,  H01L27/06 ,  H01L27/08 ,  H01L27/088 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/49 ,  H01L29/732 ,  H01L29/739 ,  H01L29/76 ,  H01L29/78 ,  H01L29/786 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/66681 ,  H01L29/7394 ,  H01L29/7824 ,  H01L29/7825

摘要： A semiconductor device includes a base P region, a source N+ region, and a drain N+ region formed in a surface layer portion on a principal surface in an N− silicon layer. In the surface layer portion on the principal surface, an N well region is formed deeper than the drain N+ region in a region including the drain N+ region and is in contact with the base P region. A trench is formed so as to penetrate the base P region in a direction toward the drain N+ region from the source N+ region as a planar structure. A gate electrode is formed via a gate insulating film in the inside of the trench.

摘要翻译： 半导体器件包括在N - 硅层。 在主表面的表层部分，在包括漏极N + SUP区域的区域中，N阱区形成得比漏极N + + SUP区域深，并与之接触 与基地区P。 形成沟槽，以从源极N +区域的漏极N + SUP区域的方向穿过基极P区域作为平面结构。 栅极电极通过沟槽内部的栅极绝缘膜形成。

公开(公告)号：US09011604B2

公开(公告)日：2015-04-21

申请号：US13151367

申请日：2011-06-02

申请人： Daigorou Yamaguchi ,  Yoshitaka Noda

发明人： Daigorou Yamaguchi ,  Yoshitaka Noda

IPC分类号： B08B3/08 ,  H01L29/06 ,  B81C1/00 ,  H01L21/02 ,  H01L29/78 ,  H01L29/10 ,  H01L29/66

CPC分类号： H01L29/7813 ,  B81B2203/033 ,  B81C1/00849 ,  H01L21/02057 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66181 ,  H01L29/66734 ,  H01L29/7811

摘要： In a manufacturing method of a semiconductor device, a depression is formed in a semiconductor substrate made of silicon or silicon compound semiconductor, and foreign substances including a protection layer in the depression is removed with a cleaning solution. The cleaning solution includes a mixed solution of hydrogen peroxide water to which a chelator is added, a basic solution, and water.

摘要翻译： 在半导体器件的制造方法中，在由硅或硅化合物半导体制成的半导体衬底中形成凹陷，并且用清洁溶液除去包含凹陷中的保护层的异物。 清洗溶液包括加入螯合剂的过氧化氢水，碱性溶液和水的混合溶液。

公开(公告)号：US08915120B2

公开(公告)日：2014-12-23

申请号：US13559415

申请日：2012-07-26

申请人： Takashi Inoue ,  Takeshi Maji ,  Hirotaka Naganuma ,  Shinichi Mitsuhashi ,  Yoshitaka Noda

发明人： Takashi Inoue ,  Takeshi Maji ,  Hirotaka Naganuma ,  Shinichi Mitsuhashi ,  Yoshitaka Noda

IPC分类号： G01N1/00 ,  G01N35/10 ,  G01N30/16 ,  G01N30/24 ,  G01N1/22

CPC分类号： G01N35/1081 ,  G01N1/2226 ,  G01N30/12 ,  G01N30/16 ,  G01N30/24 ,  G01N30/88 ,  G01N35/04 ,  G01N35/1083 ,  G01N35/1095 ,  G01N2001/2229 ,  G01N2030/126 ,  G01N2035/0458

摘要： A vial feed device is equipped with a feed arm, which is positioned between a vial tray and an oven and below either of them and having a feeding housing unit and a cooling housing unit, and a vial up-and-down moving mechanism for placing and removing vials in and from vial tray and oven. Feed arm is rotationally driven by a drive motor to move a feeding housing unit, a cooling housing unit and up-and-down moving mechanism toward vial tray or oven. High-temperature vials in oven are housed in cooling housing unit until cooling time T elapses. After cooling time T elapses, cooling housing unit is moved to a lower part of vial tray by feed arm, to be returned to vial tray by up-and-down moving mechanism.

摘要翻译： 小瓶进料装置配备有进料臂，该进料臂位于小瓶托盘和烤箱之间并且在其下方，并具有进料壳体单元和冷却壳体单元，以及用于放置的小瓶上下移动机构 并从小瓶托盘和烤箱中取出小瓶。 进给臂由驱动马达旋转驱动，以将进给壳体单元，冷却壳体单元和上下移动机构移动到小瓶托盘或烤箱。 烤箱中的高温小瓶容纳在冷却壳体单元中，直到冷却时间T过去。 经过冷却时间T后，冷却壳体单元通过进料臂移动到小瓶托盘的下部，通过上下移动机构返回到小瓶托盘。

公开(公告)号：US20120000484A1

公开(公告)日：2012-01-05

申请号：US13151367

申请日：2011-06-02

申请人： Daigorou Yamaguchi ,  Yoshitaka Noda

发明人： Daigorou Yamaguchi ,  Yoshitaka Noda

IPC分类号： C23G1/00 ,  B08B3/08

CPC分类号： H01L29/7813 ,  B81B2203/033 ,  B81C1/00849 ,  H01L21/02057 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66181 ,  H01L29/66734 ,  H01L29/7811

摘要： In a manufacturing method of a semiconductor device, a depression is formed in a semiconductor substrate made of silicon or silicon compound semiconductor, and foreign substances including a protection layer in the depression is removed with a cleaning solution. The cleaning solution includes a mixed solution of hydrogen peroxide water to which a chelator is added, a basic solution, and water.

摘要翻译： 在半导体器件的制造方法中，在由硅或硅化合物半导体制成的半导体衬底中形成凹陷，并且用清洁溶液除去包含凹陷中的保护层的异物。 清洗溶液包括加入螯合剂的过氧化氢水，碱性溶液和水的混合溶液。