公开(公告)号：US20110203657A1

公开(公告)日：2011-08-25

申请号：US13030615

申请日：2011-02-18

申请人： Jin Seok Kim ,  Young Zo Yoo ,  Seo Hyun Kim

发明人： Jin Seok Kim ,  Young Zo Yoo ,  Seo Hyun Kim

IPC分类号： H01L31/0224

CPC分类号： H01L31/1884 ,  H01L31/022425 ,  H01L31/022483 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/03925 ,  Y02E10/541

摘要： A photovoltaic cell substrate and a photovoltaic cell including the same. The photovoltaic cell substrate includes a transparent substrate and a transparent conductive film formed over the transparent substrate. The transparent conductive film includes a zinc oxide thin film layer doped with a dopant, and both a (0002) growth plane and a (10 11) growth plane are present in the zinc oxide thin film layer according to X-Ray Diffraction (XRD) data.

摘要翻译： 光伏电池基板和包括该光伏电池基板的光伏电池。 光伏电池基板包括透明基板和形成在透明基板上的透明导电膜。 透明导电膜包括掺杂有掺杂剂的氧化锌薄膜层，并且根据X射线衍射（XRD），在氧化锌薄膜层中存在（0002）生长面和（10 11）生长面， 数据。

公开(公告)号：US20120270013A1

公开(公告)日：2012-10-25

申请号：US13449689

申请日：2012-04-18

申请人： Seo Hyun Kim ,  Young Zo Yoo ,  Gun Sang Yoon ,  Eun-Ho Choi ,  Taejung Park

发明人： Seo Hyun Kim ,  Young Zo Yoo ,  Gun Sang Yoon ,  Eun-Ho Choi ,  Taejung Park

IPC分类号： H01B1/08 ,  C23C16/40

CPC分类号： H01L31/1884 ,  H01L31/022483 ,  Y02E10/50 ,  Y10T428/24355

摘要： A zinc oxide (ZnO)-based transparent conductive thin film for a photovoltaic cell and a manufacturing method thereof, in which the transparent conductive thin film has an excellent textured surface and can be mass-produced. The ZnO-based transparent conductive film is formed on a substrate, is doped with a dopant, and has a textured surface. The textured surface has a plurality of protrusions. The manufacturing method forms the zinc oxide-based transparent conductive film on a substrate by atmospheric pressure chemical vapor deposition (APCVD) involving organic precursor gas and oxidizer gas.

摘要翻译： 一种用于光伏电池的基于氧化锌（ZnO）的透明导电薄膜及其制造方法，其中透明导电薄膜具有优异的纹理表面并且可以批量生产。 ZnO基透明导电膜形成在基板上，掺杂有掺杂剂并具有纹理表面。 纹理表面具有多个突起。 制造方法通过涉及有机前体气体和氧化剂气体的大气压化学气相沉积（APCVD）在基板上形成氧化锌基透明导电膜。

公开(公告)号：US08178951B2

公开(公告)日：2012-05-15

申请号：US12442156

申请日：2007-11-15

申请人： Young Zo Yoo ,  Hyun Min Shin ,  Jun Sung Choi

发明人： Young Zo Yoo ,  Hyun Min Shin ,  Jun Sung Choi

IPC分类号： H01L23/58 ,  H01L29/20

CPC分类号： H01L21/2654 ,  C30B31/20 ,  H01L21/0445 ,  H01L21/263 ,  H01L21/2656 ,  H01L21/26586 ,  H01L21/3228 ,  H01L21/3245 ,  H01L21/425 ,  H01L29/2003 ,  H01L29/36 ,  H01L33/325

摘要： There is provided a compound semiconductor substrate prepared by forming a point defect in an inside structure thereof by implanting an electrically-neutral impurity with energy of 0.1 to 10 MeV on a surface of the substrate. When the compound semiconductor is undoped, electrical resistance increases to increase insulating properties, and when the compound semiconductor is doped with an n-type dopant, the impurity is implanted and charge concentration of the substrate increases to increase conductive properties. In accordance with the present invention, the various electrical properties needed for the compound semiconductor can be effectively controlled by increasing the insulating properties of the undoped compound semiconductor or by increasing the charge concentration of the n-type compound semiconductor, and the application range to various devices can be expanded.

摘要翻译： 提供了通过在基板的表面上注入能量为0.1〜10MeV的电中性杂质，通过在其内部结构中形成点缺陷而制备的化合物半导体基板。 当化合物半导体未掺杂时，电阻增加以增加绝缘性能，并且当化合物半导体掺杂有n型掺杂剂时，注入杂质并且衬底的电荷浓度增加以增加导电性能。 根据本发明，可以通过增加未掺杂的化合物半导体的绝缘性能或通过增加n型化合物半导体的电荷浓度来有效地控制化合物半导体所需的各种电性能，并将应用范围应用于各种 设备可以扩展。

公开(公告)号：US20110203658A1

公开(公告)日：2011-08-25

申请号：US13030640

申请日：2011-02-18

申请人： Je Choon Ryoo ,  Young Zo Yoo ,  Seo Hyun Kim ,  Jin Seok Kim

发明人： Je Choon Ryoo ,  Young Zo Yoo ,  Seo Hyun Kim ,  Jin Seok Kim

IPC分类号： H01L31/0224

CPC分类号： H01L31/022466 ,  H01L31/022425 ,  H01L31/1884 ,  Y02E10/50

摘要： A photovoltaic cell substrate includes a transparent substrate and a zinc oxide thin film layer doped with a dopant. The zinc oxide thin film layer is formed over the transparent substrate. The zinc oxide thin film layer has a (0002) crystal plane and a (10 11) crystal plane which accounts for 3% or more of the (0002) crystal plane according to X-Ray Diffraction (XRD) data.

摘要翻译： 光伏电池基板包括透明基板和掺杂有掺杂剂的氧化锌薄膜层。 在透明基板上形成氧化锌薄膜层。 根据X射线衍射（XRD）数据，氧化锌薄膜层具有（0002）晶面和（10 11）晶面占（0002）晶面的3％以上。

公开(公告)号：US20110023959A1

公开(公告)日：2011-02-03

申请号：US12844291

申请日：2010-07-27

申请人： Young Zo YOO ,  Jae Young CHOI ,  Hyun Suk KIM

发明人： Young Zo YOO ,  Jae Young CHOI ,  Hyun Suk KIM

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/1884 ,  H01L31/022483 ,  H01L31/0392 ,  Y02E10/50

摘要： A photovoltaic cell substrate and a method of manufacturing the same. The photovoltaic cell substrate includes a transparent substrate and a transparent conductive film. The transparent conductive film includes zinc oxide (ZnO) which is doped with a dopant and is formed over the transparent substrate. A surface charge activated layer is formed on a surface of the transparent conductive film by Rapid-Thermal-Annealing.

摘要翻译： 光伏电池基板及其制造方法。 光伏电池基板包括透明基板和透明导电膜。 透明导电膜包括掺杂有掺杂剂并形成在透明基板上的氧化锌（ZnO）。 通过快速热退火在透明导电膜的表面上形成表面电荷活化层。

公开(公告)号：US20090230513A1

公开(公告)日：2009-09-17

申请号：US12442156

申请日：2007-11-15

申请人： Young Zo Yoo ,  Hyun Min Shin ,  Jun Sung Choi

发明人： Young Zo Yoo ,  Hyun Min Shin ,  Jun Sung Choi

IPC分类号： H01L29/36 ,  H01L21/265

CPC分类号： H01L21/2654 ,  C30B31/20 ,  H01L21/0445 ,  H01L21/263 ,  H01L21/2656 ,  H01L21/26586 ,  H01L21/3228 ,  H01L21/3245 ,  H01L21/425 ,  H01L29/2003 ,  H01L29/36 ,  H01L33/325

摘要： There is provided a compound semiconductor substrate prepared by forming a point defect in an inside structure thereof by implanting an electrically-neutral impurity with energy of 0.1 to 10MeV on a surface of the substrate. When the compound semiconductor is undoped, electrical resistance increases to increase insulating properties, and when the compound semiconductor is doped with an n-type dopant, the impurity is implanted and charge concentration of the substrate increases to increase conductive properties. In accordance with the present invention, the various electrical properties needed for the compound semiconductor can be effectively controlled by increasing the insulating properties of the undoped compound semiconductor or by increasing the charge concentration of the n-type compound semiconductor, and the application range to various devices can be expanded.

摘要翻译： 提供了通过在基板的表面上注入0.1〜10MeV的能量的电中性杂质，通过在其内部结构中形成点缺陷而制备的化合物半导体基板。 当化合物半导体未掺杂时，电阻增加以增加绝缘性能，并且当化合物半导体掺杂有n型掺杂剂时，注入杂质并且衬底的电荷浓度增加以增加导电性能。 根据本发明，可以通过增加未掺杂的化合物半导体的绝缘性能或通过增加n型化合物半导体的电荷浓度来有效地控制化合物半导体所需的各种电性能，并将应用范围应用于各种 设备可以扩展。

公开(公告)号：US07259409B2

公开(公告)日：2007-08-21

申请号：US10665524

申请日：2003-09-22

申请人： Hideomi Koinuma ,  Jeong-Hwan Song ,  Toyohiro Chikyo ,  Young Zo Yoo ,  Parhat Ahmet ,  Yoshinori Konishi ,  Yoshiyuki Yonezawa

发明人： Hideomi Koinuma ,  Jeong-Hwan Song ,  Toyohiro Chikyo ,  Young Zo Yoo ,  Parhat Ahmet ,  Yoshinori Konishi ,  Yoshiyuki Yonezawa

IPC分类号： H01L29/739 ,  H01L31/00

CPC分类号： H01L29/267 ,  C30B23/02 ,  C30B29/46 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02474 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/22 ,  H01L33/28

摘要： A thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and a compound thin film with ionic bonding, which is formed on the metal sulfide layer by epitaxial growth. Alternatively, a thin film device includes a metal sulfide layer formed on a single crystal silicon substrate by epitaxial growth; and at least two compound thin films with ionic bonding, which are formed on the metal sulfide layer by epitaxial growth. For example, (11 20) surface AlN/MnS/Si (100) thin films formed by successively stacking a MnS layer (about 50 nm thick) and an AlN layer (about 1000 nm thick) on a single crystal Si (100) substrate, are used as a substrate, and a (11 20) surface GaN layer (about 100 nm thick) operating as a light emitting layer is formed on the substrate, thereby fabricating a thin film device.

摘要翻译： 薄膜器件包括通过外延生长在单晶硅衬底上形成的金属硫化物层; 和通过外延生长在金属硫化物层上形成的具有离子键合的复合薄膜。 或者，薄膜器件包括通过外延生长在单晶硅衬底上形成的金属硫化物层; 以及至少两个具有离子键合的复合薄膜，其通过外延生长形成在金属硫化物层上。 例如，通过将MnS层（约50nm厚）和AlN层（约1000nm厚）连续堆叠而形成的（11 20）表面GaN层（约100nm厚） 从而制造薄膜装置。