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1.发明授权Method of reducing critical dimension bias during fabrication of a semiconductor device 有权在半导体器件制造期间减小临界尺寸偏压的方法公开(公告)号：US07737040B2
公开(公告)日：2010-06-15
申请号：US11983450
申请日：2007-11-09
申请人： Christopher Dennis Bencher , Melvin Warren Montgomery , Alexander Buxbaum , Yung-Hee Yvette Lee , Jian Ding , Gilad Almogy , Wendy H. Yeh
发明人： Christopher Dennis Bencher , Melvin Warren Montgomery , Alexander Buxbaum , Yung-Hee Yvette Lee , Jian Ding , Gilad Almogy , Wendy H. Yeh
IPC分类号： H01L21/00 , H01L21/311
摘要： An anti-reflective hard mask layer left on a radiation-blocking layer during fabrication of a reticle provides functionality when the reticle is used in a semiconductor device manufacturing process.
摘要翻译： 当在半导体器件制造工艺中使用掩模版时，在掩模版的制造期间留在辐射阻挡层上的抗反射硬掩模层提供了功能。
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2.发明授权Process for etching a metal layer suitable for use in photomask fabrication 有权用于蚀刻适用于光掩模制造的金属层的工艺公开(公告)号：US07682518B2
公开(公告)日：2010-03-23
申请号：US11616990
申请日：2006-12-28
IPC分类号： C03C15/00
CPC分类号： C03C17/06 , C03C2217/26 , C03C2218/33 , C03C2218/34 , C23F4/00 , G03F1/54 , G03F1/80 , H01J37/321 , H01J2237/3341
摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.
摘要翻译： 提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。 一方面，提供了一种处理基板的方法，包括：将具有设置在处理室中的光学透明材料上的金属层的基板定位，引入包含含氧气体，含氯气体和 将含氯气体的无卤素气体和任选的惰性气体加入到处理室中，在处理室中产生处理气体的等离子体，并蚀刻设置在基板上的金属层的暴露部分。
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公开(公告)号：US20080164819A1
公开(公告)日：2008-07-10
申请号：US12007187
申请日：2008-01-08
CPC分类号： H01J37/305 , H01J27/024 , H01J37/08 , H01J37/3171 , H01J2237/0041 , H01J2237/061
摘要： Provided is a semiconductor apparatus using an ion beam. The semiconductor apparatus may include a first grid to which a voltage applied. The voltage applied to the first grid may have the same potential level as that of a reference voltage applied to a wall portion of a plasma chamber in which plasma may be generated. The first grid may adjoin the plasma. Therefore, a potential level difference between the first grid and the wall portion of the plasma chamber may be zero, and thus the plasma may be stable.
摘要翻译： 提供了使用离子束的半导体装置。 半导体装置可以包括施加电压的第一栅极。 施加到第一栅极的电压可以具有与施加到其中可能产生等离子体的等离子体室的壁部分的参考电压相同的电位电平。 第一个栅格可能与等离子体相邻。 因此，等离子体室的第一栅极和壁部之间的电位差可以为零，因此等离子体可以是稳定的。
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公开(公告)号：US06921723B1
公开(公告)日：2005-07-26
申请号：US10128907
申请日：2002-04-23
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3213
CPC分类号： H01L21/32137 , H01L21/28123
摘要： Conventional methods of semiconductor fabrication and processing typically utilize three gas (e.g., HBr, Cl2 and O2) and four gas (e.g., HBr, Cl2, O2 and CF4) chemistries to perform gate etching in plasma process chambers. However, the silicon to resist selectivity achieved by these chemistries is limited to about 3:1. The present invention concerns a plasma source gas comprising SF6 and one or more fluorine-containing gases selected from C3F6, C4F8, C5F8, CH2F2, CHF3, and C4F6 (e.g., SF6 and C4F8), allowing the use of a two gas etch chemistry that provides enhanced silicon to photoresist selectivity in gate etching processes.
摘要翻译： 半导体制造和处理的常规方法通常使用三种气体（例如，HBr，Cl 2 O 2和O 2 2）和四种气体（例如，HBr，Cl 2， / SUB>，O 2和CF 4）化学，以在等离子体处理室中进行栅极蚀刻。 然而，通过这些化学物质实现的抵抗选择性的硅被限制在约3:1。 本发明涉及一种等离子体源气体，其包括SF 6和一种或多种选自C 3 F 6 N，C C 12的含氟气体 8，C 5，C 5，F 5，C 2，F 2， CH 3，CH 3，和C 4 F 6（例如，SF 6和C 6） 允许使用在栅极蚀刻工艺中提供增强的硅到光致抗蚀剂选择性的两种气体蚀刻化学物质。
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公开(公告)号：US6094012A
公开(公告)日：2000-07-25
申请号：US187540
申请日：1998-11-06
申请人： Ka-Ngo Leung , Yung-Hee Yvette Lee
发明人： Ka-Ngo Leung , Yung-Hee Yvette Lee
CPC分类号： H01J27/18
摘要： Multicusp ion sources are capable of producing ions with low axial energy spread which are necessary in applications such as ion projection lithography (IPL) and radioactive ion beam production. The addition of a radially extending magnetic filter consisting of a pair of permanent magnets to the multicusp source reduces the energy spread considerably due to the improvement in the uniformity of the axial plasma potential distribution in the discharge region. A coaxial multicusp ion source designed to further reduce the energy spread utilizes a cylindrical magnetic filter to achieve a more uniform axial plasma potential distribution. The coaxial magnetic filter divides the source chamber into an outer annular discharge region in which the plasma is produced and a coaxial inner ion extraction region into which the ions radially diffuse but from which ionizing electrons are excluded. The energy spread in the coaxial source has been measured to be 0.6 eV. Unlike other ion sources, the coaxial source has the capability of adjusting the radial plasma potential distribution and therefore the transverse ion temperature (or beam emittance).
摘要翻译： 多重离子源能够产生具有低轴向能量扩散的离子，其在诸如离子投影光刻（IPL）和放射性离子束生产的应用中是必需的。 由放电区域中的轴向等离子体电位分布的均匀性的改善，向多焦点源添加由一对永磁体构成的径向延伸的磁性过滤器增加了能量扩散。 设计用于进一步降低能量传播的同轴多叶离子源利用圆柱形磁性过滤器来实现更均匀的轴向等离子体电位分布。 同轴磁性过滤器将源室划分成其中产生等离子体的外部环形放电区域和离子径向扩散而从其中排除电离电子的同轴内部离子提取区域。 同轴源中的能量传播已经被测量为0.6eV。 与其他离子源不同，同轴源具有调整径向等离子体电位分布和横向离子温度（或光束发射率）的能力。
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6.发明申请INVERTER DEVICE, NAND DEVICE, NOR DEVICE, AND LOGIC DEVICE INCLUDING THE SAME 有权逆变器装置，NAND器件，NOR器件和包括其的逻辑器件公开(公告)号：US20130168640A1
公开(公告)日：2013-07-04
申请号：US13599483
申请日：2012-08-30
申请人： Young-jun YUN , Sang-wook KIM , Seong-jun PARK , David SEO , Yung-hee Yvette LEE , Chang-seung LEE
发明人： Young-jun YUN , Sang-wook KIM , Seong-jun PARK , David SEO , Yung-hee Yvette LEE , Chang-seung LEE
IPC分类号： H01L29/16
CPC分类号： H03K19/20
摘要： An inverter device including a tunable diode device and a diode device that includes a control terminal connected to an input terminal of the inverter device, an anode terminal connected to a high-level voltage terminal, and a cathode terminal connected to an output terminal of the inverter device, wherein the diode device is configured to turn on or off according to a voltage applied to the control terminal.
摘要翻译： 一种逆变器装置，包括可调谐二极管器件和二极管器件，其包括连接到逆变器器件的输入端子的控制端子，连接到高电平电压端子的阳极端子和连接到所述反相器件的输出端子的阴极端子 逆变器装置，其中所述二极管装置被配置为根据施加到所述控制端子的电压而导通或截止。
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公开(公告)号：US07521000B2
公开(公告)日：2009-04-21
申请号：US10925887
申请日：2004-08-25
IPC分类号： C03C15/00
CPC分类号： C03C17/06 , C03C2217/26 , C03C2218/33 , C03C2218/34 , C23F4/00 , G03F1/54 , G03F1/80 , H01J37/321 , H01J2237/3341
摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.
摘要翻译： 提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。 一方面，提供了一种处理基板的方法，包括：将具有设置在处理室中的光学透明材料上的金属层的基板定位，引入包含含氧气体，含氯气体和 将含氯气体的无卤素气体和任选的惰性气体加入到处理室中，在处理室中产生处理气体的等离子体，并蚀刻设置在基板上的金属层的暴露部分。
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8.发明申请公开(公告)号：US20100178600A1
公开(公告)日：2010-07-15
申请号：US12728455
申请日：2010-03-22
CPC分类号： C03C17/06 , C03C2217/26 , C03C2218/33 , C03C2218/34 , C23F4/00 , G03F1/54 , G03F1/80 , H01J37/321 , H01J2237/3341
摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.
摘要翻译： 提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。 一方面，提供了一种处理基板的方法，包括将具有设置在处理室中的光学透明材料上的金属层的基板定位，引入包含含氧气体，含氯气体和 将含氯气体的无卤素气体和任选的惰性气体加入到处理室中，在处理室中产生处理气体的等离子体，并蚀刻设置在基板上的金属层的暴露部分。
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公开(公告)号：US6124834A
公开(公告)日：2000-09-26
申请号：US54765
申请日：1998-04-03
CPC分类号： H01Q21/06
摘要： An antenna comprises a plurality of small diameter conductive wires disposed in a dielectric tube. The number and dimensions of the conductive wires is selected to improve the RF resistance of the antenna while also facilitating a reduction in thermal gradients that may create thermal stresses on the dielectric tube. The antenna may be mounted in a vacuum system using a low-stress antenna assembly that cushions and protects the dielectric tube from shock and mechanical vibration while also permitting convenient electrical and coolant connections to the antenna.
摘要翻译： 天线包括设置在电介质管中的多个小直径导电线。 选择导线的数量和尺寸以改善天线的RF电阻，同时还有助于降低可能在电介质管上产生热应力的热梯度。 天线可以使用低应力天线组件安装在真空系统中，所述低应力天线组件缓冲和保护电介质管免受冲击和机械振动，同时还允许方便的电气和冷却剂连接到天线。
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10.发明授权Process for etching a metal layer suitable for use in photomask fabrication 有权用于蚀刻适用于光掩模制造的金属层的工艺公开(公告)号：US08202441B2
公开(公告)日：2012-06-19
申请号：US12728455
申请日：2010-03-22
IPC分类号： C03C15/00
CPC分类号： C03C17/06 , C03C2217/26 , C03C2218/33 , C03C2218/34 , C23F4/00 , G03F1/54 , G03F1/80 , H01J37/321 , H01J2237/3341
摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.
摘要翻译： 提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。 一方面，提供了一种处理基板的方法，包括：将具有设置在处理室中的光学透明材料上的金属层的基板定位，引入包含含氧气体，含氯气体和 将含氯气体的无卤素气体和任选的惰性气体加入到处理室中，在处理室中产生处理气体的等离子体，并蚀刻设置在基板上的金属层的暴露部分。
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