摘要:
The present invention discloses a method for connecting clients with a server. The method includes: the client obtains random number seed information; the client calculates out a random delay time according to the random number seed information and a random function after the client is disconnected from the server, wherein the random delay time is a delay time for reconnection between the client and the server; and the client sends a connection request to the server upon expiry of the random delay time. Therefore, when the server is restarted or breaks down, each client delays the connection according to the random delay time calculated by them respectively, thereby preventing plenty of clients from requesting to connect to the server simultaneously and avoiding service interruption of the server.
摘要:
A computer-implemented method of generating reference spectra includes polishing a plurality of set-up substrates, the plurality of set-up substrates comprising at least three set-up substrates, measuring a sequence of spectra from each of the plurality of set-up substrates during polishing with an in-situ optical monitoring system to provide a plurality of sequences of spectra, generating a plurality of sequences of potential reference spectra from the plurality of sequences of spectra, determining which sequence of potential reference spectra of the plurality of sequences provides a best match to remaining sequences of the plurality of sequences, and storing the sequence of potential reference spectra determined to provide the best match as reference spectra, and selecting and storing the sequence of potential reference spectra.
摘要:
A polishing method includes simultaneously polishing a first substrate and a second substrate on the same polishing pad, storing a default overpolishing time, determining first and second polishing endpoint times of the first and substrates with the in-situ monitoring system, determining a difference between the first and second polishing endpoint times, and determining whether the difference exceeds a threshold. If the difference is less than the threshold, then an overpolishing stop time is calculated and polishing of the first substrate and the second substrates is halted simultaneously at the overpolishing stop time. If the difference is greater than the threshold, then first and second overpolishing stop times that equal the first and second endpoint times plus the default overpolishing time are calculated, and polishing of the first and second substrates is halted at the first and second overpolishing stop times, respectively.
摘要:
Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.
摘要:
The present invention discloses a method for connecting clients with a server. The method includes: the client obtains random number seed information; the client calculates out a random delay time according to the random number seed information and a random function after the client is disconnected from the server, wherein the random delay time is a delay time for reconnection between the client and the server; and the client sends a connection request to the server upon expiry of the random delay time. Therefore, when the server is restarted or breaks down, each client delays the connection according to the random delay time calculated by them respectively, thereby preventing plenty of clients from requesting to connect to the server simultaneously and avoiding service interruption of the server.
摘要:
A method and apparatus for evaluating a conditioned electrochemical mechanical polishing pad are provided. A polishing pad is conditioned using a first set of process conditions. A sheet wafer and a residue wafer are polished on the polishing pad. The removal rates of one or more materials from the sheet wafer and the residue wafer are measured. A normalized removal rate is calculated. The polishing pad is further conditioned if the normalized removal rate is not within a minimum value and a maximum value. In one embodiment, the normalized removal rate comprises a ratio of the removal rate of the residue wafer to the removal rate of the sheet wafer.
摘要:
A method for electrochemical mechanical polishing (ECMP) is disclosed. The polishing rate and surface finish of the layer on the wafer are improved by controlling the surface speed of both the platen and head, controlling the current applied to the pad, and preselecting the density of the perforations on the fully conductive polishing pad. ECMP produces much higher removal rates, good surface finishes, and good planarization efficiency at a lower down force. Generally, increasing the surface speed of both the platen and the head will increase the surface smoothness. Also, increasing the current density on the wafer will increase the surface smoothness. There is virtually no difference in the smoothness of the wafer surface between the center, middle, and edge of the wafer. For copper, removal rates of 10,000 Å/min and greater can be achieved.
摘要:
Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.
摘要:
Methods for polishing tungsten are provided. During ECMP, increasing the voltage to the pad is not always enough to increase the polishing rate. When polishing tungsten, simply increasing the applied voltage will, in some cases, actually decrease the removal rate. By increasing the down force pressure between the polishing pad and the substrate, the applied voltage, and the rotation speed of the substrate and the polishing pad, the tungsten removal rate will also increase.